JP2010123935A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2010123935A JP2010123935A JP2009243709A JP2009243709A JP2010123935A JP 2010123935 A JP2010123935 A JP 2010123935A JP 2009243709 A JP2009243709 A JP 2009243709A JP 2009243709 A JP2009243709 A JP 2009243709A JP 2010123935 A JP2010123935 A JP 2010123935A
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Abstract
【解決手段】チャネルエッチ構造の逆スタガ型薄膜トランジスタを有する半導体装置の作製方法において、透過した光が複数の強度となる露光マスクである多階調マスクによって形成されたマスク層を用いて酸化物半導体膜及び導電膜のエッチング工程を行う。エッチング工程において、第1のエッチング工程は、エッチングガスによるドライエッチングを用い、第2のエッチング工程はエッチング液によるウエットエッチングを用いる。
【選択図】図1
Description
本実施の形態の半導体装置の作製方法を図1及び図2を用いて説明する。
ここでは、実施の形態1において、ソース電極層及びドレイン電極層と半導体層とが接する構成の薄膜トランジスタを有する半導体装置の例を図3及び図4に示す。
薄膜トランジスタ460は逆スタガ型の薄膜トランジスタであり、ゲート電極層451、ゲート絶縁層452、半導体層453、ソース電極層又はドレイン電極層455a、455bを含む。
本実施の形態では、薄膜トランジスタを含む表示装置の作製工程について、図5乃至図12を用いて説明する。
本実施の形態では、半導体装置の一例である表示装置において、同一基板上に少なくとも駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について以下に説明する。
薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、薄膜トランジスタを駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、半導体装置として電子ペーパーの例を示す。
本実施の形態では、半導体装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
本明細書に開示する半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図25、図26に示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
Claims (10)
- 絶縁表面を有する基板上にゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層、酸化物半導体膜、及び導電膜を積層し、
前記ゲート絶縁層、前記酸化物半導体膜、及び前記導電膜上に第1のマスク層を形成し、
前記第1のマスク層を用いて前記酸化物半導体膜、及び前記導電膜を第1のエッチング工程によりエッチングして、酸化物半導体層、及び導電層を形成し、
前記第1のマスク層をエッチングして第2のマスク層を形成し、
前記第2のマスク層を用いて前記酸化物半導体層、及び前記導電層を第2のエッチング工程によりエッチングして、凹部を有する酸化物半導体層、ソース電極層及びドレイン電極層を形成し、
前記第1のマスク層は露光マスクを用いて形成し、
前記第1のエッチング工程は、エッチングガスによるドライエッチングを用い、
前記第2のエッチング工程はエッチング液によるウエットエッチングを用い、
前記凹部を有する酸化物半導体層において、前記ソース電極層及び前記ドレイン電極層と重なる領域の膜厚より薄い膜厚の領域を有することを特徴とする半導体装置の作製方法。 - 請求項1において、前記酸化物半導体膜は、インジウム、ガリウム、及び亜鉛を含むことを特徴とする半導体装置の作製方法。
- 絶縁表面を有する基板上にゲート電極層を形成し、
前記ゲート電極層上にゲート絶縁層、第1の酸化物半導体膜、第2の酸化物半導体膜、及び導電膜を積層し、
前記ゲート絶縁層、前記第1の酸化物半導体膜、前記第2の酸化物半導体膜、及び前記導電膜上に第1のマスク層を形成し、
前記第1のマスク層を用いて前記第1の酸化物半導体膜、前記第2の酸化物半導体膜、及び前記導電膜を第1のエッチング工程によりエッチングして、第1の酸化物半導体層、第2の酸化物半導体層、及び導電層を形成し、
前記第1のマスク層をエッチングして第2のマスク層を形成し、
前記第2のマスク層を用いて前記第1の酸化物半導体層、前記第2の酸化物半導体層、及び前記導電層を第2のエッチング工程によりエッチングして、凹部を有する酸化物半導体層、ソース領域、ドレイン領域、ソース電極層及びドレイン電極層を形成し、
前記第1のマスク層は露光マスクを用いて形成し、
前記第1のエッチング工程は、エッチングガスによるドライエッチングを用い、
前記第2のエッチング工程はエッチング液によるウエットエッチングを用い、
前記凹部を有する酸化物半導体層において、前記ソース領域及び前記ドレイン領域と重なる領域の膜厚より薄い膜厚の領域を有することを特徴とする半導体装置の作製方法。 - 請求項3において、前記第1の酸化物半導体膜及び前記第2の酸化物半導体膜は、インジウム、ガリウム、及び亜鉛を含むことを特徴とする半導体装置の作製方法。
- 請求項3又は請求項4において、前記第1の酸化物半導体膜の電気伝導度は前記第2の酸化物半導体膜の電気伝導度よりも低いことを特徴とする半導体装置の作製方法。
- 請求項1乃至5のいずれか一項において、前記エッチングガスとして塩素を含むエッチングガスを用いることを特徴とする半導体装置の作製方法。
- 請求項6において、前記エッチングガスとして酸素を含むエッチングガスを用いることを特徴とする半導体装置の作製方法。
- 請求項1乃至7のいずれか一項において、前記第2のエッチング工程ではアンモニア過水を前記エッチング液として用いることを特徴とする半導体装置の作製方法。
- 請求項1乃至7のいずれか一項において、前記第2のエッチング工程ではアンモニア過水を前記エッチング液として用いて前記導電層をエッチングし、燐酸と酢酸と硝酸を混ぜた溶液を前記エッチング液として用いて前記第1の酸化物半導体層及び前記第2の酸化物半導体層をエッチングすることを特徴とする半導体装置の作製方法。
- 請求項1乃至9のいずれか一項において、前記露光マスクとしてハーフトーンマスク、又はグレートーンマスクを用いることを特徴とする半導体装置の作製方法。
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JPH0251344A (ja) * | 1988-08-12 | 1990-02-21 | Tokyo Electric Co Ltd | ワイヤ駆動装置 |
WO2012035975A1 (en) * | 2010-09-15 | 2012-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
JP2014030014A (ja) * | 2012-07-06 | 2014-02-13 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の作製方法 |
JP2014116588A (ja) * | 2012-11-16 | 2014-06-26 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
KR101460850B1 (ko) * | 2011-01-12 | 2014-11-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
JP2017143299A (ja) * | 2012-08-02 | 2017-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2020198441A (ja) * | 2012-12-25 | 2020-12-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2022091917A (ja) * | 2010-07-02 | 2022-06-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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Also Published As
Publication number | Publication date |
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TW201030857A (en) | 2010-08-16 |
JP2018139321A (ja) | 2018-09-06 |
JP2017085162A (ja) | 2017-05-18 |
KR101325946B1 (ko) | 2013-11-07 |
CN101728277B (zh) | 2016-12-21 |
KR20120102558A (ko) | 2012-09-18 |
JP2015111702A (ja) | 2015-06-18 |
KR101636305B1 (ko) | 2016-07-05 |
JP2012195621A (ja) | 2012-10-11 |
TW201250864A (en) | 2012-12-16 |
CN102945862B (zh) | 2016-02-24 |
US8741702B2 (en) | 2014-06-03 |
US20100105163A1 (en) | 2010-04-29 |
KR20100045938A (ko) | 2010-05-04 |
JP2020174191A (ja) | 2020-10-22 |
CN102945862A (zh) | 2013-02-27 |
US20140273343A1 (en) | 2014-09-18 |
JP5675025B2 (ja) | 2015-02-25 |
US9123751B2 (en) | 2015-09-01 |
TWI497605B (zh) | 2015-08-21 |
CN101728277A (zh) | 2010-06-09 |
TWI608545B (zh) | 2017-12-11 |
JP6082763B2 (ja) | 2017-02-15 |
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