JP2008021993A - 全背面接点構成を含む光起電力デバイス及び関連する方法 - Google Patents
全背面接点構成を含む光起電力デバイス及び関連する方法 Download PDFInfo
- Publication number
- JP2008021993A JP2008021993A JP2007171329A JP2007171329A JP2008021993A JP 2008021993 A JP2008021993 A JP 2008021993A JP 2007171329 A JP2007171329 A JP 2007171329A JP 2007171329 A JP2007171329 A JP 2007171329A JP 2008021993 A JP2008021993 A JP 2008021993A
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- Prior art keywords
- layer
- substrate
- semiconductor layer
- semiconductor
- amorphous semiconductor
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/13—Photovoltaic cells having absorbing layers comprising graded bandgaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/480,161 US20080000522A1 (en) | 2006-06-30 | 2006-06-30 | Photovoltaic device which includes all-back-contact configuration; and related processes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008021993A true JP2008021993A (ja) | 2008-01-31 |
| JP2008021993A5 JP2008021993A5 (enExample) | 2010-07-29 |
Family
ID=38535964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007171329A Pending JP2008021993A (ja) | 2006-06-30 | 2007-06-29 | 全背面接点構成を含む光起電力デバイス及び関連する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20080000522A1 (enExample) |
| EP (1) | EP1873840A1 (enExample) |
| JP (1) | JP2008021993A (enExample) |
| KR (1) | KR20080002657A (enExample) |
| CN (1) | CN101097969A (enExample) |
| AU (1) | AU2007202844A1 (enExample) |
Cited By (39)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2009524916A (ja) * | 2006-01-26 | 2009-07-02 | アライズ テクノロジーズ コーポレーション | 太陽電池 |
| JP2009200267A (ja) * | 2008-02-21 | 2009-09-03 | Sanyo Electric Co Ltd | 太陽電池 |
| JP2010087520A (ja) * | 2008-10-02 | 2010-04-15 | Commiss Energ Atom | デュアルドーピングを備えたヘテロ接合光電池及びその製造方法 |
| JP2010147324A (ja) * | 2008-12-19 | 2010-07-01 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
| JP2010183080A (ja) * | 2009-02-04 | 2010-08-19 | Lg Electronics Inc | 太陽電池及びその製造方法 |
| WO2010098446A1 (ja) * | 2009-02-26 | 2010-09-02 | 三洋電機株式会社 | 太陽電池の製造方法 |
| JP2010283408A (ja) * | 2010-09-30 | 2010-12-16 | Sanyo Electric Co Ltd | 太陽電池 |
| JP2011009615A (ja) * | 2009-06-28 | 2011-01-13 | Sino-American Silicon Products Inc | 太陽電池の製造方法 |
| JP2011044749A (ja) * | 2010-11-30 | 2011-03-03 | Sanyo Electric Co Ltd | 太陽電池 |
| JP2011061197A (ja) * | 2009-09-04 | 2011-03-24 | Lg Electronics Inc | 太陽電池およびその製造方法 |
| JP2011523230A (ja) * | 2008-06-12 | 2011-08-04 | サンパワー コーポレイション | ポリシリコンドープ領域を有するバックコンタクト型太陽電池のトレンチプロセス及び構造 |
| JP2012164961A (ja) * | 2011-02-08 | 2012-08-30 | Samsung Sdi Co Ltd | 太陽電池およびその製造方法 |
| WO2012132758A1 (ja) * | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及び光電変換装置の製造方法 |
| WO2012132615A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
| JP2013513965A (ja) * | 2009-12-21 | 2013-04-22 | ヒュンダイ ヘビー インダストリーズ カンパニー リミテッド | 裏面電界型のヘテロ接合太陽電池及びその製造方法 |
| JP2013513964A (ja) * | 2009-12-14 | 2013-04-22 | トタル ソシエテ アノニム | 裏面接点・ヘテロ接合太陽電池 |
| JP2013115262A (ja) * | 2011-11-29 | 2013-06-10 | Sharp Corp | 光電変換素子 |
| JP2013125890A (ja) * | 2011-12-15 | 2013-06-24 | Sharp Corp | 光電変換素子およびその製造方法 |
| JP2013187287A (ja) * | 2012-03-07 | 2013-09-19 | Sharp Corp | 光電変換素子 |
| JP2013239694A (ja) * | 2012-05-14 | 2013-11-28 | Sereebo Inc | トンネル酸化物を有する後面接合太陽電池 |
| JP2014067888A (ja) * | 2012-09-26 | 2014-04-17 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
| JP2014112735A (ja) * | 2014-03-19 | 2014-06-19 | Sanyo Electric Co Ltd | 太陽電池の製造方法 |
| JPWO2012132766A1 (ja) * | 2011-03-28 | 2014-07-28 | 三洋電機株式会社 | 光電変換装置及び光電変換装置の製造方法 |
| JP2015507848A (ja) * | 2011-12-30 | 2015-03-12 | ソレクセル、インコーポレイテッド | マルチレベルソーラーセルメタライゼーション |
| JP2015050411A (ja) * | 2013-09-04 | 2015-03-16 | 三洋電機株式会社 | 太陽電池 |
| JP2015062232A (ja) * | 2010-03-04 | 2015-04-02 | サンパワー コーポレイション | バックコンタクトソーラーセルおよびソーラーセルの製造方法 |
| JP2015188120A (ja) * | 2015-07-31 | 2015-10-29 | シャープ株式会社 | 光電変換素子 |
| WO2015198978A1 (ja) * | 2014-06-27 | 2015-12-30 | シャープ株式会社 | 光電変換装置およびその製造方法 |
| JP2016012624A (ja) * | 2014-06-27 | 2016-01-21 | シャープ株式会社 | 光電変換装置およびその製造方法 |
| JP2016012623A (ja) * | 2014-06-27 | 2016-01-21 | シャープ株式会社 | 光電変換装置およびその製造方法 |
| JP2016509376A (ja) * | 2013-03-08 | 2016-03-24 | ソイテックSoitec | 効率を改善するように構成された低バンドギャップ活性層を有する光活性デバイス及び関連する方法 |
| JP2016092425A (ja) * | 2014-11-04 | 2016-05-23 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
| WO2016114371A1 (ja) * | 2015-01-16 | 2016-07-21 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
| JP2016143868A (ja) * | 2015-02-05 | 2016-08-08 | 信越化学工業株式会社 | 裏面接合型太陽電池 |
| WO2016140309A1 (ja) * | 2015-03-04 | 2016-09-09 | シャープ株式会社 | 光電変換素子およびその製造方法 |
| JP2017118112A (ja) * | 2015-12-21 | 2017-06-29 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
| JPWO2016114271A1 (ja) * | 2015-01-14 | 2017-10-19 | シャープ株式会社 | 光電変換素子、それを備えた太陽電池モジュールおよび太陽光発電システム |
| JP2019169599A (ja) * | 2018-03-23 | 2019-10-03 | 株式会社カネカ | 太陽電池の製造方法、および、太陽電池 |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20080002657A (ko) | 2008-01-04 |
| AU2007202844A1 (en) | 2008-01-17 |
| CN101097969A (zh) | 2008-01-02 |
| EP1873840A1 (en) | 2008-01-02 |
| US20080000522A1 (en) | 2008-01-03 |
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