JP2010087520A - デュアルドーピングを備えたヘテロ接合光電池及びその製造方法 - Google Patents
デュアルドーピングを備えたヘテロ接合光電池及びその製造方法 Download PDFInfo
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- JP2010087520A JP2010087520A JP2009229662A JP2009229662A JP2010087520A JP 2010087520 A JP2010087520 A JP 2010087520A JP 2009229662 A JP2009229662 A JP 2009229662A JP 2009229662 A JP2009229662 A JP 2009229662A JP 2010087520 A JP2010087520 A JP 2010087520A
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- 230000009977 dual effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000002019 doping agent Substances 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 21
- 238000005215 recombination Methods 0.000 description 11
- 230000006798 recombination Effects 0.000 description 11
- 239000000969 carrier Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
【解決手段】光電池が、第1層と同じ導電型であって、かつ1.1016から1.1018atoms/cm3の間のドーパント濃度を有する第2非晶質層(225)をさらに備え、前記第2層が、基板の第1面上に直接的に堆積され、前記第1層によってコーティングされている。最後に、第1面と反対である基板の第2面上において、この電池が、基板と同じ材料であり、かつ1.1019から1.1022atoms/cm3の間のドーパント濃度を有する同じ導電型の第3非晶質層(260)を含む。
【選択図】図2A
Description
110 基板
120 非晶質シリコン層
125 真性シリコン層
130 透明導電層
140 電極
160 非晶質シリコン層
165 真性a−Si層
210 基板
220 第1非晶質層
225 第2非晶質層
230 導電酸化物層
240 電極
260 第3非晶質層
265 第4非晶質層
270 導電酸化物層
280 背後電極
Claims (10)
- 第1導電型の結晶質半導体基板(210)と該基板の第1面上であって同じ半導体材料である第1非晶質層(220)との間にヘテロ接合を含む光電池であって、
前記非晶質層が、前記第1導電型と反対である第2導電型を有し、かつ1.1019から1.1022atoms/cm3の間のドーパント濃度を有し、
前記第1面と反対である前記基板の第2面が、前記基板と同じ材料であり、かつ1.1019から1.1022atoms/cm3の間のドーパント濃度を有する同じ導電型の第3非晶質層(260)でコーティングされており、
さらに、前記第1層と同じ導電型であって、かつ1.1016から1.1018atoms/cm3の間のドーパント濃度を有する第2非晶質層(225)を備え、
前記第2層が、前記基板の前記第1面上に直接的に堆積され、前記第1層によってコーティングされていることを特徴とする光電池。 - 前記第1及び第2層内のドーピングが漸進的であり、前記ドーパント濃度が、前記第2層から第1層に向かって通じる方向に増加することを特徴とする請求項1に記載の光電池。
- 前記各第1及び第2層内のドーピング濃度が、一定であることを特徴とする請求項1に記載の光電池。
- 前記第1層の厚さが、50nm未満であり、
前記第2層の厚さが、10nm未満であることを特徴とする請求項1から3のいずれか一項に記載の光電池。 - 前記基板と同じ半導体材料でありかつ同じ導電型の第4非晶質層(265)をさらに備え、
前記第4層が、前記基板(210)の前記第2面上に直接的に堆積され、前記第3層によってコーティングされていることを特徴とする請求項1から4のいずれか一項に記載の光電池。 - 前記第3及び第4層内のドーピングが漸進的であり、前記ドーパント濃度が、前記第4層から前記第3層に向かって通じる方向に増加することを特徴とする請求項5に記載の光電池。
- 前記各第3及び第4層内のドーパント濃度が、一定であることを特徴とする請求項5に記載の光電池。
- 前記第3層の厚さが、50nm未満であり、
前記第4層の厚さが、10nm未満であることを特徴とする請求項5から7のいずれか一項に記載の光電池。 - 前記第1層が、第1透明導電酸化層(230)でコーティングされ、第1集電極(240)が前記第1透明導電酸化層上に配置されることを特徴とする請求項1から8のいずれか一項に記載の光電池。
- 前記第3層が、第2透明導電酸化層(270)でコーティングされ、第2集電極(280)が前記第2透明導電酸化層上に配置されることを特徴とする請求項1から9のいずれか一項に記載の光電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0856669 | 2008-10-02 | ||
FR0856669A FR2936905B1 (fr) | 2008-10-02 | 2008-10-02 | Cellule photovoltaique a heterojonction a deux dopages et procede de fabrication. |
Publications (2)
Publication Number | Publication Date |
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JP2010087520A true JP2010087520A (ja) | 2010-04-15 |
JP5424800B2 JP5424800B2 (ja) | 2014-02-26 |
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JP2009229662A Active JP5424800B2 (ja) | 2008-10-02 | 2009-10-01 | デュアルドーピングを備えたヘテロ接合光電池及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8188364B2 (ja) |
EP (1) | EP2172981B1 (ja) |
JP (1) | JP5424800B2 (ja) |
ES (1) | ES2454316T3 (ja) |
FR (1) | FR2936905B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014072416A (ja) * | 2012-09-28 | 2014-04-21 | Mitsubishi Electric Corp | 太陽電池およびその製造方法、太陽電池モジュール |
WO2014148499A1 (ja) * | 2013-03-19 | 2014-09-25 | 長州産業株式会社 | 光発電素子及びその製造方法 |
JP2014204128A (ja) * | 2013-04-03 | 2014-10-27 | エルジー エレクトロニクス インコーポレイティド | 太陽電池 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101139443B1 (ko) * | 2009-09-04 | 2012-04-30 | 엘지전자 주식회사 | 이종접합 태양전지와 그 제조방법 |
KR20110043147A (ko) * | 2009-10-21 | 2011-04-27 | 주성엔지니어링(주) | 이종 접합 태양전지 및 그 제조방법 |
JP5484950B2 (ja) * | 2010-02-23 | 2014-05-07 | 三洋電機株式会社 | 太陽電池 |
KR101098813B1 (ko) * | 2010-08-26 | 2011-12-26 | 엘지전자 주식회사 | 태양 전지 |
KR101918737B1 (ko) * | 2012-03-19 | 2019-02-08 | 엘지전자 주식회사 | 태양 전지 |
US20140170806A1 (en) * | 2012-12-18 | 2014-06-19 | Intermolecular, Inc. | TCOs for High-Efficiency Crystalline Si Heterojunction Solar Cells |
FR3015770B1 (fr) * | 2013-12-19 | 2016-01-22 | Commissariat Energie Atomique | Procede et systeme de controle de qualite de cellules photovoltaiques |
WO2016043353A1 (ko) * | 2014-09-15 | 2016-03-24 | 주식회사 테스 | 태양전지모듈 |
CN108172658B (zh) * | 2018-01-23 | 2019-07-09 | 国家电投集团西安太阳能电力有限公司 | 一种n型异质结双面太阳能电池的制备方法 |
KR20190128860A (ko) * | 2018-05-09 | 2019-11-19 | 엘지전자 주식회사 | 태양 전지 |
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2008
- 2008-10-02 FR FR0856669A patent/FR2936905B1/fr not_active Expired - Fee Related
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2009
- 2009-09-29 EP EP09171557.3A patent/EP2172981B1/fr active Active
- 2009-09-29 ES ES09171557.3T patent/ES2454316T3/es active Active
- 2009-09-30 US US12/570,781 patent/US8188364B2/en active Active
- 2009-10-01 JP JP2009229662A patent/JP5424800B2/ja active Active
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JP2003324209A (ja) * | 2001-11-29 | 2003-11-14 | Sanyo Electric Co Ltd | 光起電力装置及びその製造方法 |
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Cited By (10)
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JP2014072416A (ja) * | 2012-09-28 | 2014-04-21 | Mitsubishi Electric Corp | 太陽電池およびその製造方法、太陽電池モジュール |
WO2014148499A1 (ja) * | 2013-03-19 | 2014-09-25 | 長州産業株式会社 | 光発電素子及びその製造方法 |
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JPWO2014148499A1 (ja) * | 2013-03-19 | 2017-02-16 | 長州産業株式会社 | 光発電素子 |
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US11482629B2 (en) | 2013-04-03 | 2022-10-25 | Lg Electronics Inc. | Solar cell |
Also Published As
Publication number | Publication date |
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FR2936905A1 (fr) | 2010-04-09 |
US8188364B2 (en) | 2012-05-29 |
EP2172981A2 (fr) | 2010-04-07 |
US20100084012A1 (en) | 2010-04-08 |
ES2454316T3 (es) | 2014-04-10 |
EP2172981A3 (fr) | 2012-06-27 |
JP5424800B2 (ja) | 2014-02-26 |
EP2172981B1 (fr) | 2013-12-25 |
FR2936905B1 (fr) | 2010-10-29 |
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