JP2017118112A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP2017118112A JP2017118112A JP2016248222A JP2016248222A JP2017118112A JP 2017118112 A JP2017118112 A JP 2017118112A JP 2016248222 A JP2016248222 A JP 2016248222A JP 2016248222 A JP2016248222 A JP 2016248222A JP 2017118112 A JP2017118112 A JP 2017118112A
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Classifications
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/02—Details
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- H—ELECTRICITY
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- H01L31/02—Details
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- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【解決手段】太陽電池100は、半導体基板10と、半導体基板10表面上に保護膜層と、保護膜層上に多結晶半導体層と、半導体層に選択的に第1導電型不純物がドープされている第1導電型領域32と、第1導電型領域32の間に第2導電型不純物がドープされている第2導電型領域34と、第1導電型領域32と第2導電型領域34の間に不純物がドープされていないバリア領域33と、第1導電型領域32と連結される第1電極42と、第2導電型領域34と連結される第2電極44を含み、第1導電型領域32及び第2導電型領域34はバリア領域33と結晶構造が異なる第2結晶形領域321、341を含み、第1導電型領域32及び第2導電型領域34の第2結晶領域321、341は相異なる深さを有する第2多結晶領域321、341と第3多結晶領域321a、341aを含む。
【選択図】図1
Description
Claims (47)
- 半導体基板と、
前記半導体基板の表面に形成される保護膜層と、
前記保護膜層上に形成された多結晶半導体層と、
前記半導体層に選択的に第1導電型不純物がドープされている第1導電型領域と、
前記第1導電型領域の間に第2導電型不純物がドープされている第2導電型領域と、
前記第1導電型領域と連結される第1電極と、
前記第2導電型領域と連結される第2電極とを含み、
前記第1導電型領域及び前記第2導電型領域の少なくとも一つは、前記保護膜層と接し、第1結晶の大きさを有する第1結晶形領域、及び前記多結晶半導体層の一部が再結晶化して前記第1結晶大きさより大きな第2結晶大きさを有する第2結晶形領域を含む、太陽電池。 - 前記第1導電型領域と前記第2導電型領域の間に不純物がドープされていないバリア領域をさらに含む、請求項1に記載の太陽電池。
- 前記バリア領域は前記第1結晶大きさを有する、請求項2に記載の太陽電池。
- 第2多結晶領域の深さ(depth)と第4多結晶領域の深さが異なる、請求項1に記載の太陽電池。
- 前記第2多結晶領域の深さは前記第4多結晶領域の深さより小さい、請求項4に記載の太陽電池。
- 前記第1電極及び前記第2電極と接する前記第2結晶形領域の界面が再結晶化して前記第1結晶大きさ及び前記第2結晶大きさより小さな第3結晶大きさを有する第3結晶形領域をさらに含む、請求項1に記載の太陽電池。
- 前記第3結晶形領域は表面に表面凹凸を含む、請求項6に記載の太陽電池。
- 前記第1電極及び前記第2電極の少なくとも一つは2層以上の多層構造であり、前記第3結晶形領域と接する場合、表面に前記第3結晶形領域の表面凹凸に対応する電極凹凸を含む、請求項7に記載の太陽電池。
- 前記第1導電型領域及び前記第2導電型領域の少なくとも一つの上に形成された絶縁層をさらに含み、
前記絶縁層に含まれた第1開口部又は第2開口部を通じて前記第1電極と前記第1導電型領域、又は前記第2電極と前記第2導電型領域が電気的に連結される、請求項1に記載の太陽電池。 - 前記第1電極及び前記第2電極のそれぞれは、前記第1開口部及び前記第2開口部の内部に突出した突出部を有する、請求項9に記載の太陽電池。
- 前記第1導電型領域はエミッタであり、前記第2導電型領域は裏面電界領域である、請求項1に記載の太陽電池。
- 第1導電型領域又は第2導電型領域において前記第2結晶形領域の断面積が第1結晶形領域の断面積より大きい、請求項1に記載の太陽電池。
- 前記第1導電型領域の厚さと前記第2導電型領域の厚さは同一ではない、請求項1に記載の太陽電池。
- 前記多結晶半導体層の厚さは、P型導電型領域、バリア領域及びN型導電型領域の順に小さい、請求項1に記載の太陽電池。
- 半導体基板と、
前記半導体基板上に形成され、第1導電型を有する半導体層でなる第1導電型領域と、
前記第1導電型領域上に位置し、第1コンタクトホールを備える絶縁膜と、
前記第1コンタクトホールを通じて前記第1導電型領域に電気的に連結される第1電極とを含み、
前記第1導電型領域は、前記第1コンタクトホールが形成された部分を含む第1部分と、前記第1部分以外の領域に位置する第2部分とを含み、
前記第1部分が前記第2部分とは異なる表面粗さ及び異なる結晶性の少なくとも一つを有する、太陽電池。 - 前記第1部分の表面粗さは前記第2部分の表面粗さより大きい、請求項15に記載の太陽電池。
- 前記第2部分は前記第1部分より高い結晶性を有する、請求項15に記載の太陽電池。
- 前記第1部分の切削損傷(saw damage)マークより前記第2部分の切削損傷マークがより濃く見える、請求項15に記載の太陽電池。
- 前記第2部分において前記第1部分に隣接した第1領域が前記第1領域とは異なる第2領域より明るく見える、請求項15に記載の太陽電池。
- 前記第1導電型と反対の第2導電型を有する第2導電型領域と、
前記第2導電型領域に電気的に連結される第2電極とをさらに含む、請求項15に記載の太陽電池。 - 前記半導体基板と前記第1導電型領域及び前記第2導電型領域との間に位置する保護膜層をさらに含む、請求項20に記載の太陽電池。
- 前記第1電極及び前記第2電極のそれぞれは多層構造の蒸着膜でなり、表面までの全高が1μm以下である、請求項20に記載の太陽電池。
- 半導体基板上に保護膜層を形成する段階と、
前記保護膜層上に第1結晶大きさを有する真性多結晶半導体層を蒸着する段階と、
前記多結晶半導体層上に第2導電型ドーパントを含むドーピング層を形成する段階と、
前記ドーピング層にレーザーを照射して、前記ドーピング層に含まれた前記第2導電型ドーパントを前記多結晶半導体層にドープし、前記多結晶半導体層を再結晶化して第1導電型領域を形成する段階とを含む、太陽電池の製造方法。 - 前記レーザーを前記ドーピング層に選択的に照射して前記多結晶半導体層に第1導電型領域を局部的に形成する、請求項23に記載の太陽電池の製造方法。
- 前記多結晶半導体層の一部は前記レーザーの照射によって再結晶化し、前記再結晶化した多結晶半導体層の一部は前記第1結晶大きさより大きな第2結晶大きさを有する、請求項23に記載の太陽電池の製造方法。
- 前記第1導電型領域を形成した後、前記多結晶半導体層上に残存するドーピング層を除去する段階をさらに含む、請求項23に記載の太陽電池の製造方法。
- 複数の前記第1導電型領域の間に前記第2導電型ドーパントと反対の第1導電型ドーパントを前記多結晶半導体層にドープして第2導電型領域を形成する段階をさらに含む、請求項23に記載の太陽電池の製造方法。
- 前記第2導電型領域は熱拡散法によって形成する、請求項27に記載の太陽電池の製造方法。
- 前記第1導電型領域とコンタクトする第1電極及び前記第2導電型領域とコンタクトする第2電極を形成する段階をさらに含む、請求項27に記載の太陽電池の製造方法。
- 前記ドーピング層は前記第2導電型ドーパントを含む非晶質シリコンからなる半導体層である、請求項23に記載の太陽電池の製造方法。
- 前記第1導電型領域を形成する段階は、
前記第1導電型領域の幅より大きなスポットサイズを有するレーザーを前記第1導電型領域の長手方向に連続したスポットが互いに部分的に重畳するようにスキャンする、請求項23に記載の太陽電池の製造方法。 - 前記残存するドーピング層を除去する段階は、湿式食刻又は乾式食刻で行う、請求項26に記載の太陽電池の製造方法。
- 前記残存するドーピング層を除去する段階は、前記多結晶半導体層の一部をオーバーエッチングする、請求項32に記載の太陽電池の製造方法。
- 前記残存するドーピング層を除去する段階の後に、
前記多結晶半導体層上にマスク層を形成する段階をさらに含み、
第2導電型領域を形成する段階は、
前記マスク層に開口部を形成し、前記第1導電型領域が形成されていない前記多結晶半導体層の領域を露出させ、前記第1導電型ドーパントをドープして前記第2導電型領域を形成する、請求項26に記載の太陽電池の製造方法。 - 前記マスク層が形成されていない半導体基板の前面をテクスチャーする段階をさらに含む、請求項34に記載の太陽電池の製造方法。
- 前記第2導電型領域を形成する段階は、
前記第1導電型ドーパントを含む気体雰囲気で前記半導体基板の前面及び前記開口部を通じての前記多結晶半導体層に前記第1導電型ドーパントを熱拡散させて前記第2導電型領域及び前面電界領域を同時に形成する、請求項34に記載の太陽電池の製造方法。 - 前記マスク層はシリコンカーバイド(SiC)を含む、請求項34に記載の太陽電池の製造方法。
- 前記第2導電型領域を形成した後、前記マスク層を除去することをさらに含む、請求項36に記載の太陽電池の製造方法。
- 前記マスク層を除去することは前記マスク層を湿式食刻することを含む、請求項38に記載の太陽電池の製造方法。
- 前記開口部は、前記マスク層にレーザーを照射して一部領域を除去することによって形成される、請求項34に記載の太陽電池の製造方法。
- 前記レーザーが照射される前記多結晶半導体層の領域は第1結晶大きさより大きい第2結晶大きさを有するように再結晶化される、請求項40に記載の太陽電池の製造方法。
- 前記第1導電型領域を形成する段階で使われるレーザーのパルス幅はマスク層に開口部を形成する段階で使われるレーザーのパルス幅より小さい、請求項34に記載の太陽電池の製造方法。
- 前記第1電極及び第2電極を形成する段階は、
前記多結晶半導体層上に絶縁膜を形成する段階と、
前記絶縁層にレーザーを照射して前記第1導電型領域及び前記第2導電型領域のそれぞれを露出させる開口部を形成する段階とを含む、請求項29に記載の太陽電池の製造方法。 - 前記絶縁層に開口部を形成するレーザーのパルス幅は前記第1導電型領域を形成する段階で使われるレーザーのパルス幅より小さい、請求項43に記載の太陽電池の製造方法。
- 前記ドーピング層に形成された開口部の幅は前記マスク層に形成された開口部の幅より大きく、前記マスク層に形成される開口部の幅は絶縁層に形成された開口部の幅より大きい、請求項34に記載の太陽電池の製造方法。
- 前記絶縁層に開口部を形成した後、前記絶縁層上に電極層をスパッタリング法による蒸着で形成する、請求項43に記載の太陽電池の製造方法。
- 半導体基板と、
前記半導体基板上に形成され、第1導電型領域及び第2導電型領域を含む多結晶半導体層と、
前記多結晶半導体層上に位置し、前記第1導電型領域及び前記第2導電型領域のそれぞれに対応する第1コンタクトホール及び第2コンタクトホールを含む絶縁膜と、
前記第1コンタクトホールを通じて前記第1導電型領域に電気的に連結される第1電極と、
前記第2コンタクトホールを通じて前記第2導電型領域に電気的に連結される第2電極とを含み、
前記第1導電型領域及び前記導電型領域のそれぞれは前記第1電極及び第2電極との界面に第1凹凸を有し、
前記第1電極及び第2電極のそれぞれは、
前記界面に対向する最外側表面に前記第1凹凸に対応する形成された第2凹凸と、
前記複数の太陽電池の中で第1太陽電池の第1電極と前記第1太陽電池に隣り合う第2太陽電池の第2電極を電気的に連結する配線材を含み、
前記第1電極及び前記第2電極のそれぞれは前記配線材と前記第2凹凸が形成された最外側表面の導電性接着剤によって連結される、太陽電池モジュール。
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KR20230140542A (ko) | 2023-10-06 |
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CN106898658A (zh) | 2017-06-27 |
KR20170074172A (ko) | 2017-06-29 |
CN106898658B (zh) | 2019-11-05 |
US20170179325A1 (en) | 2017-06-22 |
US10868210B2 (en) | 2020-12-15 |
EP3373339A1 (en) | 2018-09-12 |
KR102600379B1 (ko) | 2023-11-10 |
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