TWI688109B - 太陽能電池 - Google Patents

太陽能電池 Download PDF

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TWI688109B
TWI688109B TW107138086A TW107138086A TWI688109B TW I688109 B TWI688109 B TW I688109B TW 107138086 A TW107138086 A TW 107138086A TW 107138086 A TW107138086 A TW 107138086A TW I688109 B TWI688109 B TW I688109B
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aluminum
solar cell
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doped region
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TW202017196A (zh
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葉峻銘
黃崇傑
羅俊傑
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財團法人工業技術研究院
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Priority to CN201811448207.XA priority patent/CN111106187A/zh
Priority to US16/243,088 priority patent/US20200135947A1/en
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Abstract

一種太陽能電池包括n型矽基板、p型摻雜區、抗反射層、n +型背電場、鋁電極、鋁摻雜區以及背電極。n型矽基板具有第一表面與相對第一表面的第二表面。p型摻雜區形成於n型矽基板的第一表面。抗反射層形成於p型摻雜區上。鋁電極形成於p型摻雜區上，而鋁摻雜區形成於鋁電極下的p型摻雜區內，其中鋁摻雜區與鋁電極直接接觸。n +型背電場形成於n型矽基板的第二表面，背電極則形成於n型矽基板的第二表面上。

Description

太陽能電池
本發明是有關於一種太陽能技術，且特別是有關於一種太陽能電池。
由於石化能源短缺，人們對環保重要性的認知提高，因此人們近年來不斷地積極研發替代能源與再生能源的相關技術，希望可以減少目前人類對於石化能源的依賴程度以及使用石化能源時對環境帶來的影響。在眾多的替代能源與再生能源的技術中，以太陽能電池(solar cell)最受矚目。主要是因為太陽能電池可直接將太陽能轉換成電能，且發電過程中不會產生二氧化碳或氮化物等有害物質，因此不會對環境造成污染。
然而，太陽能電池的電極(金屬)與矽基板之間容易發生載子複合，且金屬與基板之間的接觸阻抗也是待改善的問題。因此，為了降低金屬跟基板的載子複合與降低金屬與基板的接觸阻抗，目前的高效率太陽能電池會在金屬下方製作選擇性射極結構(selective emitter)，即金屬下方區的射極摻雜較濃。
傳統以銀金屬下方做選擇性電極結構步驟需先上犧牲層(sacrificial layer)，接著圖案化(patterning)犧牲層，再上遮蔽(mask)膠使犧牲層部分露出後再去掉遮蔽膠，經第二次硼擴散(Boron-diffused)，之後蝕刻掉(etching)犧牲層等六個步驟後再形成抗反射層後續製程。所以這種結構的製造方式相當的困難及繁瑣。
本發明提供一種太陽能電池，可降低製作成本並提升結構的性能。
本發明另提供一種太陽能電池，可避免基板損傷並降低少數載子複合的機率，以提升元件性能。
本發明的太陽能電池包括n型矽基板、p型摻雜區、抗反射層、n +型背電場、鋁電極、鋁摻雜區以及背電極。n型矽基板具有第一表面與相對第一表面的第二表面。p型摻雜區形成於n型矽基板的第一表面。抗反射層形成於p型摻雜區上。鋁電極形成於p型摻雜區上，而鋁摻雜區形成於鋁電極下的p型摻雜區內，其中鋁摻雜區與鋁電極直接接觸。n +型背電場形成於n型矽基板的第二表面，背電極則形成於n型矽基板的第二表面上。
本發明的另一太陽能板包括n型矽基板、p型摻雜區、多晶矽層、抗反射層、n +型背電場、鋁電極、鋁摻雜區以及背電極。n型矽基板具有第一表面與相對第一表面的第二表面。p型摻雜區形成於n型矽基板的第一表面。多晶矽層形成於p型摻雜區上。抗反射層形成於多晶矽層上。鋁電極形成於多晶矽層上，而鋁摻雜區形成於鋁電極下的多晶矽層內，其中鋁摻雜區與鋁電極直接接觸。n +型背電場形成於n型矽基板的第二表面，背電極則形成於n型矽基板的第二表面上。
基於上述，本發明藉由鋁金屬同時作為正面電極與選擇性射極(p++摻雜區)的摻雜來源，所以可經由簡單的製程，達到減少電極與基板的接觸損失以及降低成本的功效。此外，本發明還可利用多晶矽層隔開矽基板與鋁金屬，以避免製作鋁電極時使用雷射開線對基板的損傷，而且多晶矽層對基板的其他區域有表面鈍化的效果，因此能進一步降低少數載子複合。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
以下將參考圖式來全面地描述本發明的例示性實施例，但本發明還可按照多種不同形式來實施，且不應解釋為限於本文所述的實施例。在圖式中，為了清楚起見，各區域、部位及層的大小與厚度可不按實際比例繪製。為了方便理解，下述說明中相同的元件將以相同之符號標示來說明。
圖1是依照本發明的第一實施例的一種太陽能電池的結構剖面示意圖。
請參照圖1，第一實施例的太陽能電池10至少包括n型矽基板100、p型摻雜區102、抗反射層104、鋁電極106、鋁摻雜區108、n +型背電場110以及背電極112。n型矽基板100具有第一表面100a與相對第一表面100a的第二表面100b。p型摻雜區102則形成於n型矽基板100的第一表面100a，其中p型摻雜區102的摻質例如硼、鋁、鎵、銦、鉈、鍺或前述元素的組合。抗反射層104與鋁電極106均形成於p型摻雜區102上；也就是說，抗反射層104是設置在鋁電極106以外的n型矽基板100上，以降低入射光從n型矽基板100反射出去的機率。從製程來看，可先在p型摻雜區102上形成一整面的抗反射層104，再利用如雷射開線等方式在抗反射層104中形成開口114並露出第一表面100a，之後在開口114中形成鋁電極106。在一實施例中，所述抗反射層104為單層結構，材料包括氧化鋁、氮化矽、氧化矽或氮氧化矽；在另一實施例中，所述抗反射層104可為多層結構，材料包括氧化鋁/氮化矽、氧化鋁/氧化矽或氧化鋁/氮氧化矽。
請繼續參照圖1，鋁摻雜區108是形成於鋁電極106下的p型摻雜區102內，且形成鋁摻雜區108的方式例如是以鋁電極106作為摻質來源，並藉由高溫製程使鋁電極106內的鋁離子擴散摻雜到p型摻雜區102內，所以鋁摻雜區108會與鋁電極106直接接觸，並因此簡化製程。此外，鋁摻雜區108還可進一步延伸至n型矽基板100內，而使鋁摻雜區108的深度（即延伸區108a）比p型摻雜區102的深度深。在本實施例中，鋁摻雜區108的摻雜濃度可比p型摻雜區102的摻雜濃度大兩倍以上，以作為p++選擇射極（selective emitter），並藉此降低鋁電極106與n型矽基板100之間的接觸電阻，其中鋁摻雜濃度可在1×10 19cm -3至1×10 21cm -3 。另外，鋁摻雜區108可為連續區域或非連續區域；舉例來說，連續區域可為線型區域、非連續區域可為點狀（dot）區域或虛線型（dashed）區域。至於n +型背電場110是形成於n型矽基板100的第二表面100b，且背電極112是形成於n型矽基板100的第二表面100b上。在圖1中的n +型背電場110是全面背電場，且背電極112包含透明導電層116（TCO可舉例為ITO、ZnO、TiO 2、IWO或In 2O 3:Zr）與金屬層118（如鋁層、銀層等），但本發明並不限於此，凡是n型太陽能電池的背電極設計均可用於本實施例。舉例來說，上述n +型背電場110可為局部背電場，並於n型矽基板100的第二表面100b加設具有開口的鈍化層（未繪示），使n型矽基板100的第二表面100b上的背電極112透過鈍化層之開口與局部的n +型背電場相接觸。
圖2是依照本發明的第二實施例的一種太陽能電池的結構剖面示意圖，其中使用與圖1相同的元件符號來代表相同或相似的構件，且所省略的部分技術說明，如各層或區域的尺寸、材料、摻雜濃度、功能等均可參照圖1的內容，因此於下文不再贅述。
請參照圖2，第二實施例的太陽能電池20與第一實施例的主要差異在於，p型摻雜區102和抗反射層104之間還有一層多晶矽層200，使鋁摻雜區202形成於鋁電極106下的多晶矽層200內。由於鋁電極106的形成可能如第一實施例所述，採用雷射開線等方式在抗反射層104中欲形成鋁電極106的位置劃線，所以在n型矽基板100的第一表面100a上若先形成一層多晶矽層200，則可有效降低p型摻雜區102因雷射開孔所造成的損傷，同時又具備良好的表面鈍化效果，能將鋁電極106與p型摻雜區102隔開形成鈍化接觸，因此能降低載子復合。在本實施例中，多晶矽層200的材料例如多晶矽、多晶氧化矽、多晶碳化矽或其它多晶矽化物。而且，多晶矽層200的厚度例如10nm~500nm之間，以確保鈍化效果並且不影響光進入太陽能電池20。此外，圖2的多晶矽層200為一整面的膜層，但本發明並不限於此；在另一實施例中，多晶矽層200也可局部形成於n型矽基板100的第一表面100a上，而位在鋁電極106和p型摻雜區102之間。至於鋁摻雜區202的形成方式、摻雜濃度、所佔區域等均可參照第一實施例。此外，鋁摻雜區202還可延伸至p型摻雜區102內或者進一步延伸至n型矽基板100內，以進一步降低載子復合機率，進而提升太陽能電池20的開路電壓。
以下列舉數個實驗用以驗證本發明的功效，但本發明之範圍並不侷限於以下實驗例。
〈實驗例1〉
為了製作一個如圖1所示的太陽能電池，先在矽晶（C-Si）晶片正面形成硼摻雜的p型摻雜區作為射極，然後晶片背面拋光，進行n +型背電場製作，再於晶片正面形成抗反射層（含Al 2O 3層與SiN層），並量測其少數載子生命週期（Life time）與隱開路電壓（iV OC），結果記載於下表1。
之後，利用雷射開線在抗反射層中形成開口(寬度約10µm~15µm)，並量測雷射開線後的少數載子生命週期與隱開路電壓，結果記載於下表2。
然後，利用網印方式將鋁膠形成在上述開口的部位，再進行燒結（燒結爐最高溫度約700ºC，燒結時間為1至3分鐘），使鋁膠成為鋁電極並使鋁電極內的鋁離子擴散摻雜到p型摻雜區內，而完成鋁摻雜區（Al-p++），並量測少數載子生命週期與隱開路電壓，結果記載於下表3。
最後，在晶片背面完成背電極（含TCO與金屬）製作以完成太陽能電池，再量測其開路電壓（V OC）並記載於下表4。
〈實驗例2〉
為了製作一個如圖2所示的太陽能電池，基本上採用與實驗例1相同的製程，但是在形成抗反射層之前，先在晶片正面形成多晶矽（I-poly）層。多晶矽層的製程參數為：使用低壓化學氣相沉積（LPCVD）、溫度580 ºC、壓力150 mtorr、沉積來源為SiH 4。
同樣地，在雷射開線前、雷射開線後、完成鋁摻雜區以及完成太陽能電池，均進行測量並記載於下表1~4。
〈實驗例3〉
基本上採用與實驗例2相同的製程，但是多晶矽層改為多晶氧化矽（I-oxide poly）層。多晶氧化矽層的製程參數為：使用低壓化學氣相沉積、溫度580 ºC、壓力150 mtorr、沉積來源為SiH 4/N 2O = 1:1。
同樣地，在雷射開線前、雷射開線後、完成鋁摻雜區以及完成太陽能電池，均進行測量並記載於下表1~4。
〈對照例〉
在矽晶（C-Si）晶片正面形成硼摻雜的p型摻雜區作為射極，然後晶片背面拋光，進行n +型背電場製作，再於晶片正面形成抗反射層（含Al 2O 3層與SiN層），並量測其少數載子生命週期與隱開路電壓，結果記載於下表1。
之後，利用網印方式將銀膠形成在抗反射層上，再進行燒結（燒結爐溫度約760ºC，燒結時間為1至3分鐘），使銀膠成為銀電極並燒穿抗反射層，並量測少數載子生命週期與隱開路電壓，結果記載於下表3。
最後，在晶片背面完成背電極（含TCO與金屬）製作以完成太陽能電池，再量測其開路電壓並記載於下表4。
表1
Figure 107138086-A0305-0001
表2
Figure 107138086-A0305-0002
對照例無雷射開線，所以與表1的數據相同。
表3
Figure 107138086-A0305-0003
表4
Figure 107138086-A0305-0004
從表1至表4可知，實驗例1~3雖然在雷射開線後的數據低於對照例(表2)，但是在完成太陽能電池之後的開路電壓明顯高於對照例。
綜上所述，本發明直接利用鋁電極與p型摻雜區反應形成鋁摻雜區（Al-p++），取代傳統在金屬電極下方另外摻雜P++區作為選擇性射極結構，具有成本低與製程簡單的效果，以達到提升電池壽命以及提升電池開路電壓的結果。另外，本發明還增加一層多晶矽層，可降低雷射開線對基板的損傷，且可提升電池壽命以及提升電池開路電壓。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10、20:太陽能電池
100:n型矽基板
100a:第一表面
100b:第二表面
102:p型摻雜區
104:抗反射層
106:鋁電極
108、202:鋁摻雜區
108a:延伸區
110:n+型背電場
112:背電極
114:開口
116:透明導電層
118:金屬層
200:多晶矽層
圖1是依照本發明的第一實施例的一種太陽能電池的結構剖面示意圖。 圖2是依照本發明的第二實施例的一種太陽能電池的結構剖面示意圖。
10:太陽能電池
100:n型矽基板
100a:第一表面
100b:第二表面
102:p型摻雜區
104:抗反射層
106:鋁電極
108:鋁摻雜區
108a:延伸區
110:n+型背電場
112:背電極
114:開口
116:透明導電層
118:金屬層

Claims (10)

  1. 一種太陽能電池，包括：n型矽基板，具有第一表面與相對於所述第一表面的第二表面；p型摻雜區，形成於所述n型矽基板的所述第一表面；多晶矽層，形成於所述p型摻雜區上，其中所述多晶矽層的材料包括多晶氧化矽或多晶碳化矽；抗反射層，形成於所述多矽晶層上；多數個鋁電極，形成於所述多晶矽層上；多數個鋁摻雜區，形成於所述多數個鋁電極下的所述多晶矽層內，且所述多數個鋁摻雜區與所述多數個鋁電極直接接觸；n+型背電場，形成於所述n型矽基板的所述第二表面；以及背電極，形成於所述n型矽基板的所述第二表面上。
  2. 如申請專利範圍第1項所述的太陽能電池，其中所述多晶矽層的厚度介於10nm~500nm。
  3. 如申請專利範圍第1項所述的太陽能電池，其中所述鋁摻雜區更包括延伸至所述p型摻雜區內。
  4. 如申請專利範圍第1項所述的太陽能電池，其中所述鋁摻雜區的摻雜濃度比所述p型摻雜區的摻雜濃度大兩倍以上。
  5. 如申請專利範圍第1項所述的太陽能電池，其中所述p型摻雜區的摻質包括硼、鋁、鎵、銦、鉈、鍺或前述元素的組合。
  6. 如申請專利範圍第1項所述的太陽能電池，其中所述鋁摻雜區為連續區域或非連續區域。
  7. 如申請專利範圍第6項所述的太陽能電池，其中所述連續區域包括線型區域。
  8. 如申請專利範圍第6項所述的太陽能電池，其中所述非連續區域包括點狀區域或虛線型區域。
  9. 如申請專利範圍第1項所述的太陽能電池，其中所述抗反射層為單層或多層結構。
  10. 如申請專利範圍第1項所述的太陽能電池，其中所述n+型背電場為全面背電場或局部背電場。
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