JP2010199416A - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
- Publication number
- JP2010199416A JP2010199416A JP2009044435A JP2009044435A JP2010199416A JP 2010199416 A JP2010199416 A JP 2010199416A JP 2009044435 A JP2009044435 A JP 2009044435A JP 2009044435 A JP2009044435 A JP 2009044435A JP 2010199416 A JP2010199416 A JP 2010199416A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- amorphous semiconductor
- type amorphous
- type
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 177
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 40
- 238000005215 recombination Methods 0.000 claims description 40
- 230000006798 recombination Effects 0.000 claims description 40
- 238000000059 patterning Methods 0.000 abstract description 2
- 230000000452 restraining effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 182
- 229910021419 crystalline silicon Inorganic materials 0.000 description 31
- 239000000463 material Substances 0.000 description 18
- 239000000969 carrier Substances 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 239000007769 metal material Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
【解決手段】太陽電池100の製造方法は、i型非晶質半導体層11i及びp型非晶質半導体層11pのパターニング工程の後、i型非晶質半導体層12iの形成工程前に、n型結晶シリコン基板10nの裏面のうち露出領域R2のクリーニング工程を備える。
【選択図】図5
Description
(太陽電池の構成)
本発明の第1実施形態に係る太陽電池の構成について、図1及び図2を参照しながら説明する。図1は、第1実施形態に係る太陽電池100の裏面側の平面図である。図2は、図1のA−A線における拡大断面図である。
次に、太陽電池100の製造方法について、太陽電池100の断図面を参照しながら説明する。
第1実施形態に係る太陽電池100の製造方法は、i型非晶質半導体層11i及びp型非晶質半導体層11pのパターニング工程の後、i型非晶質半導体層12iの形成工程前に、n型結晶シリコン基板10nの裏面のうち露出領域R2のクリーニング工程を備える。
以下において、第2実施形態に係る太陽電池100について、図面を参照しながら説明する。以下においては、第1実施形態との相違点について主に説明する。具体的には、第2実施形態に係る太陽電池100は、p型非晶質半導体層11pとi型非晶質半導体層12iとの間に介挿される再結合層Rを有する。
本発明の第2実施形態に係る太陽電池の構成について、図7を参照しながら説明する。図7は、第2実施形態に係る太陽電池100の断面図である。
このような半導体材料を用いた場合、エネルギーバンド中に多くのギャップ内準位を介したキャリアの再結合を利用することによって、p型非晶質半導体層11pを介してn型結晶シリコン基板10nで生成されたキャリアを取り出すことができる。従って、p型非晶質半導体層11pの表面に再結合層Rを形成しても、両層の接触は、低抵抗、すなわちオーム性接触に近似する。
このような金属材料を用いた場合、p型非晶質半導体層11pの表面に再結合層Rを形成しても、両層の接触は、低抵抗、すなわちオーム性接触に近似する。従って、p側電極20pとp型非晶質半導体層11pとの間での低抵抗化が図られることによって、p側電極20pからキャリアを良好に取り出すことが可能となる。
次に、第2実施形態に係る太陽電池100の製造方法について、太陽電池100の断図面を参照しながら説明する。
第2実施形態に係る太陽電池100の製造方法は、p型非晶質半導体層11p上に再結合層Rを形成する工程を有する。i型非晶質半導体層12i及びn型非晶質半導体層12nは、n型結晶シリコン基板10nの裏面上から再結合層R上に跨って形成される。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
10n…n型結晶シリコン基板
11i…i型非晶質半導体層
11p…p型非晶質半導体層
R…再結合層
12i…i型非晶質半導体層
12n…n型非晶質半導体層
20n…n側電極
20p…p側電極
30…レジスト膜
100…太陽電池
Claims (3)
- 半導体基板の一主面の第1領域上において、第1導電型を有する第1半導体層を形成する工程Aと、
前記一主面の第2領域をクリーニングする工程Bと、
前記一主面の前記第2領域上から前記第1半導体層上に跨って、第2導電型を有する第2半導体層を形成する工程Cと
を備えることを特徴とする太陽電池の製造方法。 - 前記工程Aは、
前記一主面の略全面に前記第1導電型を有する第3半導体層を形成する工程と、
前記第3半導体層のうち前記第1の領域上に形成された部分をレジスト膜で覆う工程と、
前記第3半導体層のうち前記レジスト膜から露出する部分を除去する工程と、
前記レジスト膜を除去する工程と
を含むことを特徴とする請求項1に記載の太陽電池の製造方法。 - 前記工程Aと前記工程Bの間に、前記第1半導体層上に再結合層を形成する工程をさらに備え、
前記工程Cにおいて、前記第2領域上から前記再結合層上に跨って、前記第2半導体層を形成する
ことを特徴とする請求項1に記載の太陽電池の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009044435A JP5518347B2 (ja) | 2009-02-26 | 2009-02-26 | 太陽電池の製造方法 |
US13/203,509 US8664034B2 (en) | 2009-02-26 | 2010-02-26 | Method of manufacturing solar cell |
CN2010800092234A CN102334192A (zh) | 2009-02-26 | 2010-02-26 | 太阳能电池的制造方法 |
PCT/JP2010/053087 WO2010098446A1 (ja) | 2009-02-26 | 2010-02-26 | 太陽電池の製造方法 |
EP10746325.9A EP2403005A4 (en) | 2009-02-26 | 2010-02-26 | PROCESS FOR THE PRODUCTION OF SOLAR CELLS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009044435A JP5518347B2 (ja) | 2009-02-26 | 2009-02-26 | 太陽電池の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014055927A Division JP5816800B2 (ja) | 2014-03-19 | 2014-03-19 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010199416A true JP2010199416A (ja) | 2010-09-09 |
JP5518347B2 JP5518347B2 (ja) | 2014-06-11 |
Family
ID=42665650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009044435A Expired - Fee Related JP5518347B2 (ja) | 2009-02-26 | 2009-02-26 | 太陽電池の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8664034B2 (ja) |
EP (1) | EP2403005A4 (ja) |
JP (1) | JP5518347B2 (ja) |
CN (1) | CN102334192A (ja) |
WO (1) | WO2010098446A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013002008A1 (ja) * | 2011-06-29 | 2013-01-03 | 三洋電機株式会社 | 太陽電池 |
JP2013197555A (ja) * | 2012-03-23 | 2013-09-30 | Sharp Corp | 光電変換素子およびその製造方法 |
JP2014075526A (ja) * | 2012-10-05 | 2014-04-24 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
WO2020149128A1 (ja) * | 2019-01-18 | 2020-07-23 | 株式会社カネカ | 太陽電池の製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132834A1 (ja) * | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
WO2014002266A1 (ja) | 2012-06-29 | 2014-01-03 | 三洋電機株式会社 | 太陽電池 |
JP5967555B2 (ja) * | 2012-06-29 | 2016-08-10 | パナソニックIpマネジメント株式会社 | 太陽電池 |
US9640676B2 (en) * | 2012-06-29 | 2017-05-02 | Sunpower Corporation | Methods and structures for improving the structural integrity of solar cells |
US10516066B2 (en) * | 2016-03-23 | 2019-12-24 | Sharp Kabushiki Kaisha | Photovoltaic conversion device, photovoltaic module, and solar power generation system |
EP3223318A1 (en) | 2016-03-23 | 2017-09-27 | Meyer Burger (Germany) AG | Hetero junction photovoltaic cell and method of manufacturing same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11354820A (ja) * | 1998-06-12 | 1999-12-24 | Sharp Corp | 光電変換素子及びその製造方法 |
JP2002280584A (ja) * | 2001-03-19 | 2002-09-27 | Kanegafuchi Chem Ind Co Ltd | ハイブリッド型薄膜光電変換装置とその製造方法 |
JP2005101151A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2008021993A (ja) * | 2006-06-30 | 2008-01-31 | General Electric Co <Ge> | 全背面接点構成を含む光起電力デバイス及び関連する方法 |
WO2008050889A1 (fr) * | 2006-10-27 | 2008-05-02 | Kyocera Corporation | Procédé de fabrication d'élément de cellule solaire et élément de cellule solaire |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7199395B2 (en) | 2003-09-24 | 2007-04-03 | Sanyo Electric Co., Ltd. | Photovoltaic cell and method of fabricating the same |
FR2880989B1 (fr) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
JP2009044435A (ja) | 2007-08-08 | 2009-02-26 | Toshiba Corp | 放送/vod受信装置と視聴管理方法 |
-
2009
- 2009-02-26 JP JP2009044435A patent/JP5518347B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-26 EP EP10746325.9A patent/EP2403005A4/en not_active Ceased
- 2010-02-26 CN CN2010800092234A patent/CN102334192A/zh active Pending
- 2010-02-26 WO PCT/JP2010/053087 patent/WO2010098446A1/ja active Application Filing
- 2010-02-26 US US13/203,509 patent/US8664034B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11354820A (ja) * | 1998-06-12 | 1999-12-24 | Sharp Corp | 光電変換素子及びその製造方法 |
JP2002280584A (ja) * | 2001-03-19 | 2002-09-27 | Kanegafuchi Chem Ind Co Ltd | ハイブリッド型薄膜光電変換装置とその製造方法 |
JP2005101151A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2008021993A (ja) * | 2006-06-30 | 2008-01-31 | General Electric Co <Ge> | 全背面接点構成を含む光起電力デバイス及び関連する方法 |
WO2008050889A1 (fr) * | 2006-10-27 | 2008-05-02 | Kyocera Corporation | Procédé de fabrication d'élément de cellule solaire et élément de cellule solaire |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013002008A1 (ja) * | 2011-06-29 | 2013-01-03 | 三洋電機株式会社 | 太陽電池 |
JP2013197555A (ja) * | 2012-03-23 | 2013-09-30 | Sharp Corp | 光電変換素子およびその製造方法 |
JP2014075526A (ja) * | 2012-10-05 | 2014-04-24 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
WO2020149128A1 (ja) * | 2019-01-18 | 2020-07-23 | 株式会社カネカ | 太陽電池の製造方法 |
JPWO2020149128A1 (ja) * | 2019-01-18 | 2021-09-30 | 株式会社カネカ | 太陽電池の製造方法 |
JP7101264B2 (ja) | 2019-01-18 | 2022-07-14 | 株式会社カネカ | 太陽電池の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2403005A4 (en) | 2013-10-23 |
CN102334192A (zh) | 2012-01-25 |
WO2010098446A1 (ja) | 2010-09-02 |
US8664034B2 (en) | 2014-03-04 |
EP2403005A1 (en) | 2012-01-04 |
JP5518347B2 (ja) | 2014-06-11 |
US20120052622A1 (en) | 2012-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5461028B2 (ja) | 太陽電池 | |
JP5538360B2 (ja) | 太陽電池の製造方法及び太陽電池 | |
JP5518347B2 (ja) | 太陽電池の製造方法 | |
EP2530729B1 (en) | Solar cell and method for producing same | |
JP2009200267A (ja) | 太陽電池 | |
US20120325309A1 (en) | Solar cell and solar cell manufacturing method | |
JP2010010620A (ja) | 太陽電池及びその製造方法 | |
JP5820265B2 (ja) | 裏面電極型太陽電池及びその製造方法 | |
TWI424582B (zh) | 太陽能電池的製造方法 | |
JP6141670B2 (ja) | 太陽電池の製造方法 | |
JP4945916B2 (ja) | 光電変換素子 | |
JP7228561B2 (ja) | 太陽電池の製造方法 | |
JP7221276B2 (ja) | 太陽電池の製造方法、および、太陽電池 | |
JP2004228281A (ja) | 光起電力装置 | |
JP5174114B2 (ja) | 太陽電池 | |
JP5816800B2 (ja) | 太陽電池の製造方法 | |
JP6285713B2 (ja) | 結晶シリコン系太陽電池および太陽電池モジュール | |
JP5094949B2 (ja) | 太陽電池 | |
WO2014016931A1 (ja) | 太陽電池及びその製造方法 | |
JP2016039246A (ja) | 光電変換素子 | |
JP7353865B2 (ja) | 太陽電池の製造方法 | |
WO2012132932A1 (ja) | 太陽電池及び太陽電池の製造方法 | |
TW201818559A (zh) | 異質接面太陽能電池結構及其製作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120127 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130201 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130910 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140304 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140402 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5518347 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |