JP2010010620A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
- Publication number
- JP2010010620A JP2010010620A JP2008171323A JP2008171323A JP2010010620A JP 2010010620 A JP2010010620 A JP 2010010620A JP 2008171323 A JP2008171323 A JP 2008171323A JP 2008171323 A JP2008171323 A JP 2008171323A JP 2010010620 A JP2010010620 A JP 2010010620A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- amorphous semiconductor
- type amorphous
- thickness
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 179
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 238000002161 passivation Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】太陽電池10において、i型非晶質半導体層12は、平面視において露出する露出部12Aと、p型非晶質半導体層13及びn型非晶質半導体層14によって覆われる被覆部12Bとを含む。半導体基板11の裏面に直交する直交方向において、露出部12Aが有する第1厚さT1は、被覆部12Bが有する第2厚さT2より小さい。
【選択図】図2
Description
本発明の実施形態に係る太陽電池10の構成について、図1及び図2を参照しながら説明する。図1は、本実施形態に係る太陽電池10を裏面側から見た平面図である。図2は、図1のA−A線における拡大断面図である。
次に、太陽電池10の製造方法について、図3〜5を参照しながら説明する。なお、各図(a)は、半導体基板11を裏面側から見た平面図である。
次に、被覆部12Bの厚さT2の適正値を求めるために行った検証実験について説明する。具体的には、実用可能な範囲でi型非晶質半導体層の層質及び層厚を変更したサンプルを作製し、各サンプルの太陽電池特性(出力値Pmax)を測定した。なお、各サンプルでは、i型非晶質半導体層を一様な厚さで形成した。また、i型非晶質半導体層の層質は、層内部に含まれる欠陥が少ないほど、また、導電率が小さいほど高品質である。
サンプルAは、高品質なi型非晶質Si層をパッシベーション層として備える太陽電池である。具体的には、CVD装置の設定条件を、SiH4流量50sccm、H2流量80sccm、圧力80Pa、温度180℃、RFパワー50Wとして、i型非晶質Si層を形成した。
サンプルBは、中程度の品質を有するi型非晶質Si層をパッシベーション層として備える太陽電池である。具体的には、CVD装置の設定条件を、SiH4流量50sccm、H2流量80sccm、圧力80Pa、温度180℃、RFパワー100Wとして、i型非晶質Si層を形成した。
サンプルCは、低品質なi型非晶質Si層をパッシベーション層として備える太陽電池である。具体的には、CVD装置の設定条件を、SiH4流量50sccm、H2流量80sccm、圧力80Pa、温度180℃、RFパワー200Wとして、i型非晶質Si層を形成した。
図6は、サンプルA〜Cについて、層厚と太陽電池特性(出力値Pmax)との関係を示すグラフである。
次に、被覆部12Bの厚さT2に対する露出部12Aの厚さT1の比(T1/T2)の適正値を求めるために行った検証実験について説明する。具体的には、上記サンプルA〜Cそれぞれの層質(設定条件)で形成された露出部12A及び被覆部12Bを備えるサンプルを作製し、各サンプルの太陽電池特性(出力値Pmax)を測定した。
本実施形態に係る太陽電池10において、i型非晶質半導体層12は、平面視において露出する露出部12Aと、p型非晶質半導体層13及びn型非晶質半導体層14によって覆われる被覆部12Bとを含む。半導体基板11の裏面に直交する直交方向において、露出部12Aが有する第1厚さT1は、被覆部12Bが有する第2厚さT2より小さい。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
11…半導体基板
12…i型非晶質半導体層
12A…露出部
12B…被覆部
13…p型非晶質半導体層
14…n型非晶質半導体層
15…p側電極
16…n側電極
121…第1i型非晶質半導体層
122…第2i型非晶質半導体層
S1…第1領域
S2…第2領域
Claims (4)
- 受光面と、前記受光面の反対側に設けられる裏面とを有する半導体基板と、
前記裏面上に形成される実質的に真正な非晶質半導体層と、
前記非晶質半導体層上に形成されるp型半導体層と、
前記非晶質半導体層上に形成されるn型半導体層と
を備え、
前記非晶質半導体層は、前記裏面側から見た平面視において露出する露出部と、前記平面視において前記p型半導体層及び前記n型半導体層によって覆われる被覆部とを含み、
前記裏面に直交する直交方向において、前記露出部が有する第1厚さは、前記被覆部が有する第2厚さより小さい
ことを特徴とする太陽電池。 - 前記第2厚さに対する前記第1厚さの比は、0.48以上1未満である
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1厚さは、1.44nm以上25nm未満である
ことを特徴とする請求項1に記載の太陽電池。 - 受光面と前記受光面の反対側に設けられる裏面とを有する半導体基板を備える太陽電池の製造方法であって、
前記裏面上に、実質的に真正な第1非晶質半導体層を形成する工程と、
前記第1非晶質半導体層上に設けられる第1領域及び第2領域に、実質的に真正な第2非晶質半導体層を形成する工程と、
前記第1領域に形成された前記第2非晶質半導体層上にp型半導体層を形成する工程と、
前記第2領域に形成された前記第2非晶質半導体層上にn型半導体層を形成する工程と
を備えることを特徴とする太陽電池の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008171323A JP5207852B2 (ja) | 2008-06-30 | 2008-06-30 | 太陽電池及びその製造方法 |
KR1020107029616A KR20110037984A (ko) | 2008-06-30 | 2009-06-29 | 태양 전지 및 그 제조 방법 |
CN2009801252596A CN102089891B (zh) | 2008-06-30 | 2009-06-29 | 太阳能电池及其制造方法 |
EP09773426A EP2296192A1 (en) | 2008-06-30 | 2009-06-29 | Solar cell and method of manufacturing the same |
US13/001,732 US20110132441A1 (en) | 2008-06-30 | 2009-06-29 | Solar cell and method of manufacturing the same |
PCT/JP2009/061831 WO2010001848A1 (ja) | 2008-06-30 | 2009-06-29 | 太陽電池及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008171323A JP5207852B2 (ja) | 2008-06-30 | 2008-06-30 | 太陽電池及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010010620A true JP2010010620A (ja) | 2010-01-14 |
JP5207852B2 JP5207852B2 (ja) | 2013-06-12 |
Family
ID=41465943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008171323A Expired - Fee Related JP5207852B2 (ja) | 2008-06-30 | 2008-06-30 | 太陽電池及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20110132441A1 (ja) |
EP (1) | EP2296192A1 (ja) |
JP (1) | JP5207852B2 (ja) |
KR (1) | KR20110037984A (ja) |
CN (1) | CN102089891B (ja) |
WO (1) | WO2010001848A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132854A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
JP2023520119A (ja) * | 2020-02-14 | 2023-05-16 | シャンラオ ジンコ ソーラー テクノロジー デベロップメント シーオー.,エルティーディー | 太陽電池それと太陽電池パネル及びその製造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010104098A1 (ja) * | 2009-03-10 | 2010-09-16 | 三洋電機株式会社 | 太陽電池の製造方法及び太陽電池 |
JP2013219065A (ja) * | 2010-08-06 | 2013-10-24 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池の製造方法 |
JP5927549B2 (ja) * | 2010-08-24 | 2016-06-01 | パナソニックIpマネジメント株式会社 | 太陽電池及びその製造方法 |
GB2491209B (en) * | 2011-05-27 | 2013-08-21 | Renewable Energy Corp Asa | Solar cell and method for producing same |
JP2013030615A (ja) * | 2011-07-28 | 2013-02-07 | Sanyo Electric Co Ltd | 太陽電池 |
JP6103867B2 (ja) * | 2012-09-12 | 2017-03-29 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
CA2883641C (en) | 2012-09-18 | 2021-09-14 | Auspex Pharmaceuticals, Inc. | Formulations pharmacokinetics of deuterated benzoquinoline inhibitors of vesicular monoamine transporter 2 |
CA2978006C (en) | 2015-03-06 | 2024-06-25 | Auspex Pharmaceuticals, Inc. | Methods for the treatment of abnormal involuntary movement disorders |
CN112736163B (zh) * | 2021-02-10 | 2022-07-29 | 普乐(合肥)光技术有限公司 | 一种多晶硅薄膜钝化背极插指型太阳能电池的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004296551A (ja) * | 2003-03-25 | 2004-10-21 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2005101240A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2005101427A (ja) * | 2003-09-26 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4070483B2 (ja) * | 2002-03-05 | 2008-04-02 | 三洋電機株式会社 | 光起電力装置並びにその製造方法 |
EP1519422B1 (en) * | 2003-09-24 | 2018-05-16 | Panasonic Intellectual Property Management Co., Ltd. | Photovoltaic cell and its fabrication method |
JP4502845B2 (ja) * | 2005-02-25 | 2010-07-14 | 三洋電機株式会社 | 光起電力素子 |
JP2008171323A (ja) | 2007-01-15 | 2008-07-24 | Canon Inc | ジョブ管理装置、ジョブ管理方法、ジョブ管理プログラム並びに記憶媒体 |
-
2008
- 2008-06-30 JP JP2008171323A patent/JP5207852B2/ja not_active Expired - Fee Related
-
2009
- 2009-06-29 US US13/001,732 patent/US20110132441A1/en not_active Abandoned
- 2009-06-29 CN CN2009801252596A patent/CN102089891B/zh not_active Expired - Fee Related
- 2009-06-29 KR KR1020107029616A patent/KR20110037984A/ko not_active Application Discontinuation
- 2009-06-29 EP EP09773426A patent/EP2296192A1/en not_active Withdrawn
- 2009-06-29 WO PCT/JP2009/061831 patent/WO2010001848A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004296551A (ja) * | 2003-03-25 | 2004-10-21 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2005101240A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2005101427A (ja) * | 2003-09-26 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132854A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
JP5705968B2 (ja) * | 2011-03-25 | 2015-04-22 | 三洋電機株式会社 | 光電変換装置及びその製造方法 |
US9362426B2 (en) | 2011-03-25 | 2016-06-07 | Panasonic Intellectual Property Management Co., Ltd. | Photoelectric conversion device and method for producing same |
JP2023520119A (ja) * | 2020-02-14 | 2023-05-16 | シャンラオ ジンコ ソーラー テクノロジー デベロップメント シーオー.,エルティーディー | 太陽電池それと太陽電池パネル及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20110037984A (ko) | 2011-04-13 |
EP2296192A1 (en) | 2011-03-16 |
US20110132441A1 (en) | 2011-06-09 |
CN102089891B (zh) | 2013-01-02 |
CN102089891A (zh) | 2011-06-08 |
WO2010001848A1 (ja) | 2010-01-07 |
JP5207852B2 (ja) | 2013-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5207852B2 (ja) | 太陽電池及びその製造方法 | |
US10084107B2 (en) | Transparent conducting oxide for photovoltaic devices | |
KR101000064B1 (ko) | 이종접합 태양전지 및 그 제조방법 | |
JP5461028B2 (ja) | 太陽電池 | |
JP5230222B2 (ja) | 太陽電池 | |
JP5538360B2 (ja) | 太陽電池の製造方法及び太陽電池 | |
JP5518347B2 (ja) | 太陽電池の製造方法 | |
JP2010258043A (ja) | 太陽電池 | |
KR20150114792A (ko) | 초박형 hit 태양전지 및 그 제조방법 | |
JP3205613U (ja) | ヘテロ接合太陽電池構造 | |
JP2013239476A (ja) | 光起電力装置およびその製造方法、光起電力モジュール | |
JP7023976B2 (ja) | P型perc両面太陽電池の製造方法 | |
JP2013533620A (ja) | 微結晶吸収層とパシベーション層とを有する薄膜太陽電池およびその太陽電池の製造方法 | |
JP2013513964A (ja) | 裏面接点・ヘテロ接合太陽電池 | |
JP6893331B2 (ja) | 太陽電池 | |
JP2013161822A (ja) | 太陽電池およびその製造方法、太陽電池モジュール | |
RU2590284C1 (ru) | Солнечный элемент | |
JP2010283406A (ja) | 太陽電池 | |
JP2009094198A (ja) | ハイブリッド薄膜太陽電池の製造方法 | |
JP5174114B2 (ja) | 太陽電池 | |
JP5645734B2 (ja) | 太陽電池素子 | |
TWI573284B (zh) | 太陽能電池、其模組及其製造方法 | |
JP5094949B2 (ja) | 太陽電池 | |
CN112382680A (zh) | 基于激光诱导的hjt电池的制备方法及hjt电池 | |
KR101251857B1 (ko) | 양면 수광형 태양전지 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110527 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120605 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130122 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130219 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160301 Year of fee payment: 3 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5207852 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160301 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |