AU2007202844A1 - Photovoltaic device which includes all-back-contact configuration; and related processes - Google Patents
Photovoltaic device which includes all-back-contact configuration; and related processes Download PDFInfo
- Publication number
- AU2007202844A1 AU2007202844A1 AU2007202844A AU2007202844A AU2007202844A1 AU 2007202844 A1 AU2007202844 A1 AU 2007202844A1 AU 2007202844 A AU2007202844 A AU 2007202844A AU 2007202844 A AU2007202844 A AU 2007202844A AU 2007202844 A1 AU2007202844 A1 AU 2007202844A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor layer
- substrate
- amorphous semiconductor
- layer
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/13—Photovoltaic cells having absorbing layers comprising graded bandgaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/480,161 US20080000522A1 (en) | 2006-06-30 | 2006-06-30 | Photovoltaic device which includes all-back-contact configuration; and related processes |
| US11/480,161 | 2006-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2007202844A1 true AU2007202844A1 (en) | 2008-01-17 |
Family
ID=38535964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2007202844A Abandoned AU2007202844A1 (en) | 2006-06-30 | 2007-06-19 | Photovoltaic device which includes all-back-contact configuration; and related processes |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20080000522A1 (enExample) |
| EP (1) | EP1873840A1 (enExample) |
| JP (1) | JP2008021993A (enExample) |
| KR (1) | KR20080002657A (enExample) |
| CN (1) | CN101097969A (enExample) |
| AU (1) | AU2007202844A1 (enExample) |
Families Citing this family (120)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| WO2007029971A1 (en) * | 2005-09-07 | 2007-03-15 | Iferro Co., Ltd. | Method of forming organic layer on semiconductor substrate |
| US20070169808A1 (en) * | 2006-01-26 | 2007-07-26 | Kherani Nazir P | Solar cell |
| KR101198763B1 (ko) * | 2006-03-23 | 2012-11-12 | 엘지이노텍 주식회사 | 기둥 구조와 이를 이용한 발광 소자 및 그 형성방법 |
| US20080174028A1 (en) * | 2007-01-23 | 2008-07-24 | General Electric Company | Method and Apparatus For A Semiconductor Structure Forming At Least One Via |
| US9287430B1 (en) * | 2007-11-01 | 2016-03-15 | Sandia Corporation | Photovoltaic solar concentrator |
| JP5230222B2 (ja) * | 2008-02-21 | 2013-07-10 | 三洋電機株式会社 | 太陽電池 |
| KR101155343B1 (ko) * | 2008-02-25 | 2012-06-11 | 엘지전자 주식회사 | 백 콘택 태양전지의 제조 방법 |
| KR20090091562A (ko) * | 2008-02-25 | 2009-08-28 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
| US8212327B2 (en) | 2008-03-06 | 2012-07-03 | Sionyx, Inc. | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme |
| WO2009111748A2 (en) * | 2008-03-06 | 2009-09-11 | Sionyx, Inc. | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme |
| US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
| US12074240B2 (en) | 2008-06-12 | 2024-08-27 | Maxeon Solar Pte. Ltd. | Backside contact solar cells with separated polysilicon doped regions |
| KR101032064B1 (ko) * | 2008-07-24 | 2011-05-02 | 주식회사 밀레니엄투자 | 태양 전지 및 이의 제조방법 |
| FR2936905B1 (fr) * | 2008-10-02 | 2010-10-29 | Commissariat Energie Atomique | Cellule photovoltaique a heterojonction a deux dopages et procede de fabrication. |
| US7820472B2 (en) * | 2008-11-13 | 2010-10-26 | Applied Materials, Inc. | Method of forming front contacts to a silicon solar cell without patterning |
| KR100993511B1 (ko) * | 2008-11-19 | 2010-11-12 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| JP2010147324A (ja) * | 2008-12-19 | 2010-07-01 | Kyocera Corp | 太陽電池素子および太陽電池素子の製造方法 |
| KR101539047B1 (ko) * | 2008-12-24 | 2015-07-23 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 광기전력 변환 소자 및 그의 제조방법 |
| KR101142861B1 (ko) * | 2009-02-04 | 2012-05-08 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| JP5518347B2 (ja) * | 2009-02-26 | 2014-06-11 | 三洋電機株式会社 | 太陽電池の製造方法 |
| JP2010258043A (ja) * | 2009-04-21 | 2010-11-11 | Sanyo Electric Co Ltd | 太陽電池 |
| JP2010283339A (ja) * | 2009-05-02 | 2010-12-16 | Semiconductor Energy Lab Co Ltd | 光電変換装置及びその作製方法 |
| US7927910B2 (en) * | 2009-06-28 | 2011-04-19 | Sino-American Silicon Products Inc. | Manufacturing method of solar cell |
| KR101139443B1 (ko) * | 2009-09-04 | 2012-04-30 | 엘지전자 주식회사 | 이종접합 태양전지와 그 제조방법 |
| US8525018B2 (en) | 2009-09-07 | 2013-09-03 | Lg Electronics Inc. | Solar cell |
| US9064999B2 (en) | 2009-09-07 | 2015-06-23 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US20120199198A1 (en) * | 2009-10-26 | 2012-08-09 | Hebrink Timothy J | Structured film and articles made therefrom |
| US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
| CN102074616B (zh) * | 2009-11-19 | 2013-03-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种选择性发射极太阳能电池的制备方法 |
| FR2953999B1 (fr) * | 2009-12-14 | 2012-01-20 | Total Sa | Cellule photovoltaique heterojonction a contact arriere |
| KR101145357B1 (ko) * | 2009-12-16 | 2012-05-14 | (주)에스엔텍 | 텍스처링 모듈 및 이를 구비한 태양전지 제조장치 및 이를 이용한 태양전지 제조방법 |
| KR20110071375A (ko) * | 2009-12-21 | 2011-06-29 | 현대중공업 주식회사 | 후면전계형 이종접합 태양전지 및 그 제조방법 |
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| EP1873840A1 (en) | 2008-01-02 |
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