JP2001332563A - バイポーラトランジスタ及びその製造方法 - Google Patents

バイポーラトランジスタ及びその製造方法

Info

Publication number
JP2001332563A
JP2001332563A JP2000151044A JP2000151044A JP2001332563A JP 2001332563 A JP2001332563 A JP 2001332563A JP 2000151044 A JP2000151044 A JP 2000151044A JP 2000151044 A JP2000151044 A JP 2000151044A JP 2001332563 A JP2001332563 A JP 2001332563A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
conductivity type
insulating film
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000151044A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001332563A5 (https=
Inventor
Akira Asai
明 浅井
Teruto Onishi
照人 大西
Takeshi Takagi
剛 高木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2000151044A priority Critical patent/JP2001332563A/ja
Priority to US10/031,445 priority patent/US6828602B2/en
Priority to PCT/JP2001/004344 priority patent/WO2001091162A2/ja
Priority to KR1020027000961A priority patent/KR20020019560A/ko
Priority to CNB018013724A priority patent/CN1224109C/zh
Priority to EP01932237A priority patent/EP1263052A2/en
Publication of JP2001332563A publication Critical patent/JP2001332563A/ja
Priority to US10/882,220 priority patent/US6939772B2/en
Publication of JP2001332563A5 publication Critical patent/JP2001332563A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Bipolar Transistors (AREA)
JP2000151044A 2000-05-23 2000-05-23 バイポーラトランジスタ及びその製造方法 Withdrawn JP2001332563A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2000151044A JP2001332563A (ja) 2000-05-23 2000-05-23 バイポーラトランジスタ及びその製造方法
US10/031,445 US6828602B2 (en) 2000-05-23 2001-05-23 Bipolar transistor and method manufacture thereof
PCT/JP2001/004344 WO2001091162A2 (en) 2000-05-23 2001-05-23 Bipolar transistor and method of manufacture thereof
KR1020027000961A KR20020019560A (ko) 2000-05-23 2001-05-23 바이폴라 트랜지스터 및 그 제조방법
CNB018013724A CN1224109C (zh) 2000-05-23 2001-05-23 双极晶体管及其制造方法
EP01932237A EP1263052A2 (en) 2000-05-23 2001-05-23 Bipolar transistor and method of manufacture thereof
US10/882,220 US6939772B2 (en) 2000-05-23 2004-07-02 Bipolar transistor and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000151044A JP2001332563A (ja) 2000-05-23 2000-05-23 バイポーラトランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001332563A true JP2001332563A (ja) 2001-11-30
JP2001332563A5 JP2001332563A5 (https=) 2005-09-15

Family

ID=18656664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000151044A Withdrawn JP2001332563A (ja) 2000-05-23 2000-05-23 バイポーラトランジスタ及びその製造方法

Country Status (6)

Country Link
US (2) US6828602B2 (https=)
EP (1) EP1263052A2 (https=)
JP (1) JP2001332563A (https=)
KR (1) KR20020019560A (https=)
CN (1) CN1224109C (https=)
WO (1) WO2001091162A2 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003046947A3 (de) * 2001-11-30 2003-10-30 Ihp Gmbh Bipolar transistor
KR100460201B1 (ko) * 2002-04-08 2004-12-08 한국전자통신연구원 ＳｉＧｅ/Ｓｉ 이종 접합 전계 효과 트랜지스터 제조용 기판의 형성 방법
US6847062B2 (en) 2002-10-04 2005-01-25 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US6847063B2 (en) 2002-10-04 2005-01-25 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US7859030B2 (en) 2006-03-16 2010-12-28 Panasonic Corporation Heterojunction bipolar transistor and fabrication method of the same
CN102403344A (zh) * 2010-09-10 2012-04-04 上海华虹Nec电子有限公司 锗硅BiCMOS工艺中的寄生PNP双极晶体管

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DE10164176B4 (de) * 2001-12-27 2007-12-27 Austriamicrosystems Ag Bipolartransistor
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
JP4391069B2 (ja) * 2002-04-30 2009-12-24 富士通マイクロエレクトロニクス株式会社 ヘテロバイポーラトランジスタおよびその製造方法
US6699765B1 (en) * 2002-08-29 2004-03-02 Micrel, Inc. Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
JP2004111852A (ja) * 2002-09-20 2004-04-08 Fujitsu Ltd 半導体装置及びその製造方法
JP3891299B2 (ja) * 2003-05-06 2007-03-14 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置、半導体デバイス、電子機器
KR100546332B1 (ko) * 2003-06-13 2006-01-26 삼성전자주식회사 바이폴라 접합 트랜지스터 및 그 제조 방법
US7038298B2 (en) * 2003-06-24 2006-05-02 International Business Machines Corporation High fT and fmax bipolar transistor and method of making same
US6960820B2 (en) 2003-07-01 2005-11-01 International Business Machines Corporation Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same
US7262484B2 (en) * 2005-05-09 2007-08-28 International Business Machines Corporation Structure and method for performance improvement in vertical bipolar transistors
US7342293B2 (en) * 2005-12-05 2008-03-11 International Business Machines Corporation Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same
US7585740B2 (en) * 2006-03-14 2009-09-08 International Business Machines Corporation Fully silicided extrinsic base transistor
US7678667B2 (en) * 2007-06-20 2010-03-16 Silverbrook Research Pty Ltd Method of bonding MEMS integrated circuits
CN101459076B (zh) * 2007-12-13 2011-02-02 上海华虹Nec电子有限公司 SiGe HBT晶体管的制备方法
CN102064190B (zh) * 2009-11-18 2012-07-11 上海华虹Nec电子有限公司 SiGe BiCMOS工艺中的SiGe PNP双极晶体管
CN102087977B (zh) 2009-12-04 2012-04-18 无锡华润上华半导体有限公司 垂直npn晶体管及其制造方法
CN102097465B (zh) * 2009-12-15 2012-11-07 上海华虹Nec电子有限公司 BiCMOS工艺中的寄生垂直型PNP三极管及其制造方法
CN102110709B (zh) * 2009-12-24 2012-08-01 上海华虹Nec电子有限公司 BiCMOS工艺中的寄生垂直型PNP三极管及其制造方法
IT1401755B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato a conduzione verticale e relativo metodo di fabbricazione.
IT1401756B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione.
IT1401754B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato e relativo metodo di fabbricazione.
US8492794B2 (en) * 2011-03-15 2013-07-23 International Business Machines Corporation Vertical polysilicon-germanium heterojunction bipolar transistor
DE102011108334B4 (de) * 2011-07-25 2016-05-25 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zum Erhöhen der Zuverlässigkeit von Bipolartransistoren unter Hochspannungsbedingungen
CN103107087B (zh) * 2011-11-09 2015-10-14 上海华虹宏力半导体制造有限公司 与锗硅异质结npn三极管集成的pnp三极管的制造方法
US8716096B2 (en) 2011-12-13 2014-05-06 International Business Machines Corporation Self-aligned emitter-base in advanced BiCMOS technology
CN102766908B (zh) * 2012-07-25 2016-02-24 苏州阿特斯阳光电力科技有限公司 晶体硅太阳能电池的硼扩散方法
US10006365B2 (en) 2015-06-30 2018-06-26 General Electric Company Air supply and conditioning system for a gas turbine
CN107887430A (zh) * 2017-11-09 2018-04-06 重庆邮电大学 衬底施加单轴应力的硅锗异质结双极晶体管及其制造方法

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* Cited by examiner, † Cited by third party
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US4761641A (en) * 1983-01-21 1988-08-02 Vidcom Rentservice B.V. Information display system
JP2600485B2 (ja) * 1990-11-28 1997-04-16 日本電気株式会社 半導体装置
JPH05102177A (ja) * 1991-10-02 1993-04-23 Hitachi Ltd 半導体集積回路装置及びこれを用いた電子計算機
JPH05182980A (ja) 1992-01-07 1993-07-23 Toshiba Corp ヘテロ接合バイポーラトランジスタ
JP2582519B2 (ja) * 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション バイポーラ・トランジスタおよびその製造方法
GB9315448D0 (en) * 1993-07-26 1993-09-08 Rank Xerox Ltd Recording and retrieval of information relevant to the activities of a user
JP2551364B2 (ja) * 1993-11-26 1996-11-06 日本電気株式会社 半導体装置
JP2746225B2 (ja) 1995-10-16 1998-05-06 日本電気株式会社 半導体装置及びその製造方法
EP0818829A1 (en) * 1996-07-12 1998-01-14 Hitachi, Ltd. Bipolar transistor and method of fabricating it
JPH11102177A (ja) 1997-09-25 1999-04-13 Canon Inc 書体データ作成装置と書体データの作成方法、及び記憶媒体
JP3301390B2 (ja) 1998-08-13 2002-07-15 日本電気株式会社 ヘテロ接合バイポーラトランジスタを備えた半導体装置およびその製造方法
US6954859B1 (en) * 1999-10-08 2005-10-11 Axcess, Inc. Networked digital security system and methods
US20030058111A1 (en) * 2001-09-27 2003-03-27 Koninklijke Philips Electronics N.V. Computer vision based elderly care monitoring system
US7436887B2 (en) * 2002-02-06 2008-10-14 Playtex Products, Inc. Method and apparatus for video frame sequence-based object tracking
US20080129495A1 (en) * 2002-10-28 2008-06-05 Hitt Dale K Wireless sensor system for environmental monitoring and control
US20060018516A1 (en) * 2004-07-22 2006-01-26 Masoud Osama T Monitoring activity using video information

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003046947A3 (de) * 2001-11-30 2003-10-30 Ihp Gmbh Bipolar transistor
KR100460201B1 (ko) * 2002-04-08 2004-12-08 한국전자통신연구원 ＳｉＧｅ/Ｓｉ 이종 접합 전계 효과 트랜지스터 제조용 기판의 형성 방법
US6847062B2 (en) 2002-10-04 2005-01-25 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US6847063B2 (en) 2002-10-04 2005-01-25 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US7859030B2 (en) 2006-03-16 2010-12-28 Panasonic Corporation Heterojunction bipolar transistor and fabrication method of the same
CN102403344A (zh) * 2010-09-10 2012-04-04 上海华虹Nec电子有限公司 锗硅BiCMOS工艺中的寄生PNP双极晶体管
CN102403344B (zh) * 2010-09-10 2013-09-11 上海华虹Nec电子有限公司 锗硅BiCMOS工艺中的寄生PNP双极晶体管

Also Published As

Publication number Publication date
EP1263052A2 (en) 2002-12-04
US20030006484A1 (en) 2003-01-09
CN1224109C (zh) 2005-10-19
US6828602B2 (en) 2004-12-07
WO2001091162A2 (en) 2001-11-29
CN1398432A (zh) 2003-02-19
US6939772B2 (en) 2005-09-06
WO2001091162A3 (en) 2002-07-04
US20040251473A1 (en) 2004-12-16
KR20020019560A (ko) 2002-03-12

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