CN1224109C - 双极晶体管及其制造方法 - Google Patents

双极晶体管及其制造方法 Download PDF

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Publication number
CN1224109C
CN1224109C CNB018013724A CN01801372A CN1224109C CN 1224109 C CN1224109 C CN 1224109C CN B018013724 A CNB018013724 A CN B018013724A CN 01801372 A CN01801372 A CN 01801372A CN 1224109 C CN1224109 C CN 1224109C
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CN
China
Prior art keywords
layer
semiconductor layer
conductivity type
insulating film
peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB018013724A
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English (en)
Chinese (zh)
Other versions
CN1398432A (zh
Inventor
浅井明
大西照人
高木刚
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1398432A publication Critical patent/CN1398432A/zh
Application granted granted Critical
Publication of CN1224109C publication Critical patent/CN1224109C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

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  • Bipolar Transistors (AREA)
CNB018013724A 2000-05-23 2001-05-23 双极晶体管及其制造方法 Expired - Fee Related CN1224109C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000151044A JP2001332563A (ja) 2000-05-23 2000-05-23 バイポーラトランジスタ及びその製造方法
JP151044/00 2000-05-23
JP151044/2000 2000-05-23

Publications (2)

Publication Number Publication Date
CN1398432A CN1398432A (zh) 2003-02-19
CN1224109C true CN1224109C (zh) 2005-10-19

Family

ID=18656664

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018013724A Expired - Fee Related CN1224109C (zh) 2000-05-23 2001-05-23 双极晶体管及其制造方法

Country Status (6)

Country Link
US (2) US6828602B2 (https=)
EP (1) EP1263052A2 (https=)
JP (1) JP2001332563A (https=)
KR (1) KR20020019560A (https=)
CN (1) CN1224109C (https=)
WO (1) WO2001091162A2 (https=)

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KR100546332B1 (ko) * 2003-06-13 2006-01-26 삼성전자주식회사 바이폴라 접합 트랜지스터 및 그 제조 방법
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CN102064190B (zh) * 2009-11-18 2012-07-11 上海华虹Nec电子有限公司 SiGe BiCMOS工艺中的SiGe PNP双极晶体管
CN102087977B (zh) 2009-12-04 2012-04-18 无锡华润上华半导体有限公司 垂直npn晶体管及其制造方法
CN102097465B (zh) * 2009-12-15 2012-11-07 上海华虹Nec电子有限公司 BiCMOS工艺中的寄生垂直型PNP三极管及其制造方法
CN102110709B (zh) * 2009-12-24 2012-08-01 上海华虹Nec电子有限公司 BiCMOS工艺中的寄生垂直型PNP三极管及其制造方法
IT1401755B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato a conduzione verticale e relativo metodo di fabbricazione.
IT1401756B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione.
IT1401754B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato e relativo metodo di fabbricazione.
CN102403344B (zh) * 2010-09-10 2013-09-11 上海华虹Nec电子有限公司 锗硅BiCMOS工艺中的寄生PNP双极晶体管
US8492794B2 (en) * 2011-03-15 2013-07-23 International Business Machines Corporation Vertical polysilicon-germanium heterojunction bipolar transistor
DE102011108334B4 (de) * 2011-07-25 2016-05-25 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zum Erhöhen der Zuverlässigkeit von Bipolartransistoren unter Hochspannungsbedingungen
CN103107087B (zh) * 2011-11-09 2015-10-14 上海华虹宏力半导体制造有限公司 与锗硅异质结npn三极管集成的pnp三极管的制造方法
US8716096B2 (en) 2011-12-13 2014-05-06 International Business Machines Corporation Self-aligned emitter-base in advanced BiCMOS technology
CN102766908B (zh) * 2012-07-25 2016-02-24 苏州阿特斯阳光电力科技有限公司 晶体硅太阳能电池的硼扩散方法
US10006365B2 (en) 2015-06-30 2018-06-26 General Electric Company Air supply and conditioning system for a gas turbine
CN107887430A (zh) * 2017-11-09 2018-04-06 重庆邮电大学 衬底施加单轴应力的硅锗异质结双极晶体管及其制造方法

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Also Published As

Publication number Publication date
EP1263052A2 (en) 2002-12-04
US20030006484A1 (en) 2003-01-09
US6828602B2 (en) 2004-12-07
WO2001091162A2 (en) 2001-11-29
CN1398432A (zh) 2003-02-19
JP2001332563A (ja) 2001-11-30
US6939772B2 (en) 2005-09-06
WO2001091162A3 (en) 2002-07-04
US20040251473A1 (en) 2004-12-16
KR20020019560A (ko) 2002-03-12

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Granted publication date: 20051019

Termination date: 20100523