WO2003046947A3 - Bipolar transistor - Google Patents

Bipolar transistor Download PDF

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Publication number
WO2003046947A3
WO2003046947A3 PCT/EP2002/013620 EP0213620W WO03046947A3 WO 2003046947 A3 WO2003046947 A3 WO 2003046947A3 EP 0213620 W EP0213620 W EP 0213620W WO 03046947 A3 WO03046947 A3 WO 03046947A3
Authority
WO
WIPO (PCT)
Prior art keywords
bipolar transistor
base
transmitter
partially
distribution
Prior art date
Application number
PCT/EP2002/013620
Other languages
English (en)
French (fr)
Other versions
WO2003046947A2 (de
Inventor
Bernd Heinemann
Dieter Knoll
Karl-Ernst Ehwald
Holger Ruecker
Dietmar Krueger
Bernd Tillack
Hans-Joerg Osten
Wolfgang Mehr
Wolfgang Winkler
Abbas Ourmazd
Original Assignee
Ihp Gmbh
Bernd Heinemann
Dieter Knoll
Karl-Ernst Ehwald
Holger Ruecker
Dietmar Krueger
Bernd Tillack
Hans-Joerg Osten
Wolfgang Mehr
Wolfgang Winkler
Abbas Ourmazd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ihp Gmbh, Bernd Heinemann, Dieter Knoll, Karl-Ernst Ehwald, Holger Ruecker, Dietmar Krueger, Bernd Tillack, Hans-Joerg Osten, Wolfgang Mehr, Wolfgang Winkler, Abbas Ourmazd filed Critical Ihp Gmbh
Publication of WO2003046947A2 publication Critical patent/WO2003046947A2/de
Publication of WO2003046947A3 publication Critical patent/WO2003046947A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7375—Vertical transistors having an emitter comprising one or more non-monocrystalline elements of group IV, e.g. amorphous silicon, alloys comprising group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Abstract

Gemäß Anspruch 1 umfasst der erfindungsgemäße Bipolartransistor 1 einen Emitter 20, der teilweise einkristallin und teilweise polykristallin oder amorph ausgebildet ist (partiell einkristalliner Emitter). Außerdem weist die Basis 30b des Bipolartransistors 1 eine Kohlenstoff- oder Sauerstoffkonzentration im Bereich von 2x1019 bis 2x1021 cm-3. Eine solche Struktur webessert die Hochfrequenzeigenschaften des Bipolartransistors und vermindert das Hochfrequenz-Rauschen. In einer Ausgestaltung der Erfindung liegt in der Basis 30b des Bipolartransistors eine Dotierstoffvereilung, vorzugsweise eine Borverteilung, mit einer Flächendosis von mindestens 4,5x1013 cm-2, vorzugsweise mindestens 7,5x1013 cm-2 vor. Die Basis kann darüber hinaus auch Germanium enthalten.
PCT/EP2002/013620 2001-11-30 2002-12-02 Bipolar transistor WO2003046947A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001160511 DE10160511A1 (de) 2001-11-30 2001-11-30 Bipolarer Transistor
DE10160511.0 2001-11-30

Publications (2)

Publication Number Publication Date
WO2003046947A2 WO2003046947A2 (de) 2003-06-05
WO2003046947A3 true WO2003046947A3 (de) 2003-10-30

Family

ID=7708613

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/013620 WO2003046947A2 (de) 2001-11-30 2002-12-02 Bipolar transistor

Country Status (2)

Country Link
DE (1) DE10160511A1 (de)
WO (1) WO2003046947A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9414921B2 (en) 2009-10-29 2016-08-16 Valtech Cardio, Ltd. Tissue anchor for annuloplasty device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10231407B4 (de) * 2002-07-11 2007-01-11 Infineon Technologies Ag Bipolartransistor
DE10316531A1 (de) 2003-04-10 2004-07-08 Infineon Technologies Ag Bipolar-Transistor
DE10317098A1 (de) 2003-04-14 2004-07-22 Infineon Technologies Ag Verfahren zur Herstellung eines Bipolartransistors
DE10341806B4 (de) 2003-09-10 2008-11-06 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Basisschicht eines heterobipolaren pnp Transistors
DE10351100B4 (de) * 2003-10-31 2007-02-08 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung eines vertikalen PNP-Transistors aus einem Halbleiterwerkstoff und vertikaler bipolarer PNP-Transitor
DE102004001239A1 (de) * 2004-01-07 2005-08-04 Infineon Technologies Ag Selbstjustierte, epitaktische Emitterstruktur für einen Bipolartransistor und Verfahren zur Herstellung derselben
DE102005047221B4 (de) * 2005-10-01 2015-08-06 APSOL GmbH Halbleiterschichtstruktur, Bauelement mit einer solchen Halbleiterschichtstruktur, Halbleiterschichtstruktur-Scheiben und Verfahren zu deren Herstellung
US8715342B2 (en) 2009-05-07 2014-05-06 Valtech Cardio, Ltd. Annuloplasty ring with intra-ring anchoring
WO2014064695A2 (en) 2012-10-23 2014-05-01 Valtech Cardio, Ltd. Percutaneous tissue anchor techniques

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272096A (en) * 1992-09-29 1993-12-21 Motorola, Inc. Method for making a bipolar transistor having a silicon carbide layer
US5897359A (en) * 1996-12-09 1999-04-27 Electronics And Telecommunications Research Institute Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor
US6169007B1 (en) * 1999-06-25 2001-01-02 Applied Micro Circuits Corporation Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback
JP2001332563A (ja) * 2000-05-23 2001-11-30 Matsushita Electric Ind Co Ltd バイポーラトランジスタ及びその製造方法

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JPH05144834A (ja) * 1991-03-20 1993-06-11 Hitachi Ltd バイポーラトランジスタ及びその製造方法
JP2551353B2 (ja) * 1993-10-07 1996-11-06 日本電気株式会社 半導体装置及びその製造方法
JPH07169771A (ja) * 1993-12-15 1995-07-04 Nec Corp 半導体装置及びその製造方法
DE4417916A1 (de) * 1994-05-24 1995-11-30 Telefunken Microelectron Verfahren zur Herstellung eines Bipolartransistors
US5581115A (en) * 1994-10-07 1996-12-03 National Semiconductor Corporation Bipolar transistors using isolated selective doping to improve performance characteristics
JP2748898B2 (ja) * 1995-08-31 1998-05-13 日本電気株式会社 半導体装置およびその製造方法
DE19609933A1 (de) * 1996-03-14 1997-09-18 Daimler Benz Ag Verfahren zur Herstellung eines Heterobipolartransistors
DE19755979A1 (de) * 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor
JP3186691B2 (ja) * 1998-04-07 2001-07-11 日本電気株式会社 半導体装置及びその形成方法
DE19845787A1 (de) * 1998-09-21 2000-03-23 Inst Halbleiterphysik Gmbh Bipolartransistor und Verfahren zu seiner Herstellung
DE19845789A1 (de) * 1998-09-21 2000-03-23 Inst Halbleiterphysik Gmbh Bipolartransistor und Verfahren zu seiner Herstellung
DE19845793A1 (de) * 1998-09-21 2000-03-23 Inst Halbleiterphysik Gmbh Bipolartransistor und Verfahren zu seiner Herstellung
JP3346348B2 (ja) * 1999-08-19 2002-11-18 日本電気株式会社 半導体装置の製造方法
DE19940278A1 (de) * 1999-08-26 2001-03-08 Inst Halbleiterphysik Gmbh Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5272096A (en) * 1992-09-29 1993-12-21 Motorola, Inc. Method for making a bipolar transistor having a silicon carbide layer
US5897359A (en) * 1996-12-09 1999-04-27 Electronics And Telecommunications Research Institute Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor
US6169007B1 (en) * 1999-06-25 2001-01-02 Applied Micro Circuits Corporation Self-aligned non-selective thin-epi-base silicon germanium (SiGe) heterojunction bipolar transistor BicMOS process using silicon dioxide etchback
JP2001332563A (ja) * 2000-05-23 2001-11-30 Matsushita Electric Ind Co Ltd バイポーラトランジスタ及びその製造方法
EP1263052A2 (de) * 2000-05-23 2002-12-04 Matsushita Electric Industrial Co., Ltd. Bipolarer transistor und herstellungsmethode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 03 3 April 2002 (2002-04-03) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9414921B2 (en) 2009-10-29 2016-08-16 Valtech Cardio, Ltd. Tissue anchor for annuloplasty device

Also Published As

Publication number Publication date
WO2003046947A2 (de) 2003-06-05
DE10160511A1 (de) 2003-06-12

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