IN155670B - - Google Patents

Info

Publication number
IN155670B
IN155670B IN521/CAL/81A IN521CA1981A IN155670B IN 155670 B IN155670 B IN 155670B IN 521CA1981 A IN521CA1981 A IN 521CA1981A IN 155670 B IN155670 B IN 155670B
Authority
IN
India
Application number
IN521/CAL/81A
Other languages
English (en)
Inventor
Stanford Robert Ovshinsky
Vincent David Cannella
Masatsugu Izu
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Priority to IN550/MAS/84A priority Critical patent/IN162722B/en
Priority to IN549/MAS/84A priority patent/IN162721B/en
Priority to IN550/CAL/84A priority patent/IN158164B/en
Publication of IN155670B publication Critical patent/IN155670B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
IN521/CAL/81A 1980-05-19 1981-05-15 IN155670B (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IN550/MAS/84A IN162722B (de) 1980-05-19 1984-07-27
IN549/MAS/84A IN162721B (de) 1980-05-19 1984-07-27
IN550/CAL/84A IN158164B (de) 1980-05-19 1984-08-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/151,301 US4400409A (en) 1980-05-19 1980-05-19 Method of making p-doped silicon films

Publications (1)

Publication Number Publication Date
IN155670B true IN155670B (de) 1985-02-23

Family

ID=22538142

Family Applications (1)

Application Number Title Priority Date Filing Date
IN521/CAL/81A IN155670B (de) 1980-05-19 1981-05-15

Country Status (19)

Country Link
US (1) US4400409A (de)
JP (5) JP2539916B2 (de)
KR (3) KR840000756B1 (de)
AU (3) AU542845B2 (de)
BR (1) BR8103030A (de)
CA (1) CA1184096A (de)
DE (3) DE3153269C2 (de)
ES (3) ES502281A0 (de)
FR (1) FR2482786B1 (de)
GB (3) GB2076433B (de)
IE (1) IE52688B1 (de)
IL (1) IL62883A (de)
IN (1) IN155670B (de)
IT (1) IT1135827B (de)
MX (1) MX155307A (de)
NL (1) NL8102411A (de)
PH (1) PH18408A (de)
SE (1) SE456380B (de)
ZA (1) ZA813076B (de)

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JPS57122581A (en) 1982-07-30
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GB2146045A (en) 1985-04-11
SE8103043L (sv) 1981-11-20
AU542845B2 (en) 1985-03-21
AU556596B2 (en) 1986-11-13
IE811099L (en) 1981-11-19
ES512728A0 (es) 1983-06-01
GB2146045B (en) 1985-09-25
JPS5743413A (en) 1982-03-11
KR830006816A (ko) 1983-10-06
GB8323741D0 (en) 1983-10-05
NL8102411A (nl) 1981-12-16
FR2482786B1 (fr) 1986-03-07
IT1135827B (it) 1986-08-27
AU7065381A (en) 1981-11-26
ES8306923A1 (es) 1983-06-01
DE3119481A1 (de) 1982-01-28
JP2539916B2 (ja) 1996-10-02
ES8306921A1 (es) 1983-06-01
IL62883A (en) 1984-11-30
KR890003499B1 (ko) 1989-09-22
GB2076433A (en) 1981-12-02
FR2482786A1 (fr) 1981-11-20
DE3153269A1 (de) 1985-06-13
ES8207658A1 (es) 1982-10-01
JPS61287176A (ja) 1986-12-17
DE3153269C2 (de) 1986-05-15
KR890003498B1 (ko) 1989-09-22
GB8323742D0 (en) 1983-10-05
IT8121753A0 (it) 1981-05-15
US4400409A (en) 1983-08-23
CA1184096A (en) 1985-03-19
GB2147316B (en) 1985-10-30
JPS6243554B2 (de) 1987-09-14
JPS6236633B2 (de) 1987-08-07
AU3487484A (en) 1985-03-07
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DE3119481C2 (de) 1986-01-02
MX155307A (es) 1988-02-16
PH18408A (en) 1985-06-24
AU556493B2 (en) 1986-11-06
BR8103030A (pt) 1982-02-09
KR860001475A (ko) 1986-02-26
AU3487584A (en) 1985-03-07
JPH0355977B2 (de) 1991-08-27
IL62883A0 (en) 1981-07-31
KR840000756B1 (ko) 1984-05-31
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