GB2259187B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2259187B
GB2259187B GB9218177A GB9218177A GB2259187B GB 2259187 B GB2259187 B GB 2259187B GB 9218177 A GB9218177 A GB 9218177A GB 9218177 A GB9218177 A GB 9218177A GB 2259187 B GB2259187 B GB 2259187B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9218177A
Other languages
English (en)
Other versions
GB9218177D0 (en
GB2259187A (en
Inventor
Ji-Hong Ahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019910015250A external-priority patent/KR940009611B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority to GB9601877A priority Critical patent/GB2297648B/en
Priority to GB9521179A priority patent/GB2293690B/en
Publication of GB9218177D0 publication Critical patent/GB9218177D0/en
Publication of GB2259187A publication Critical patent/GB2259187A/en
Application granted granted Critical
Publication of GB2259187B publication Critical patent/GB2259187B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9218177A 1991-08-31 1992-08-26 Semiconductor device Expired - Fee Related GB2259187B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9601877A GB2297648B (en) 1991-08-31 1992-08-26 Semiconductor device
GB9521179A GB2293690B (en) 1991-08-31 1992-08-26 Manufacturing method for a semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019910015250A KR940009611B1 (ko) 1991-08-31 1991-08-31 산화막식각마스크를 이용하여 패터닝된 고집적 반도체장치의 커패시터 제조방법(poem 셀)
KR910021974 1991-11-30
KR920003339 1992-02-29

Publications (3)

Publication Number Publication Date
GB9218177D0 GB9218177D0 (en) 1992-10-14
GB2259187A GB2259187A (en) 1993-03-03
GB2259187B true GB2259187B (en) 1996-06-19

Family

ID=27348767

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9218177A Expired - Fee Related GB2259187B (en) 1991-08-31 1992-08-26 Semiconductor device

Country Status (7)

Country Link
US (1) US5330614A (enExample)
JP (1) JP2677490B2 (enExample)
DE (1) DE4224946A1 (enExample)
FR (1) FR2680913B1 (enExample)
GB (1) GB2259187B (enExample)
IT (1) IT1259016B (enExample)
TW (1) TW243541B (enExample)

Families Citing this family (60)

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KR960009998B1 (ko) * 1992-06-08 1996-07-25 삼성전자 주식회사 반도체 메모리장치의 제조방법
KR960008865B1 (en) * 1992-07-15 1996-07-05 Samsung Electronics Co Ltd Method for manufacturing a capacitor in semiconductor memory device
CN1244891C (zh) * 1992-08-27 2006-03-08 株式会社半导体能源研究所 有源矩阵显示器
DE4404129C2 (de) * 1993-02-12 2000-04-20 Micron Technology Inc Verfahren zum Herstellen einer mehrere Stifte aufweisenden leitfähigen Struktur
KR960011664B1 (ko) * 1993-05-21 1996-08-24 현대전자산업 주식회사 반도체 장치의 캐패시터 형성방법
KR970000977B1 (ko) * 1993-05-21 1997-01-21 현대전자산업 주식회사 반도체 소자의 캐패시터 제조방법
KR950010078A (ko) * 1993-09-09 1995-04-26 김주용 반도체 기억장치의 제조방법
KR100231593B1 (ko) * 1993-11-19 1999-11-15 김주용 반도체 소자의 캐패시터 제조방법
KR0132859B1 (ko) * 1993-11-24 1998-04-16 김광호 반도체장치의 커패시터 제조방법
KR950021710A (ko) * 1993-12-01 1995-07-26 김주용 반도체 장치의 캐패시터 제조방법
US5429976A (en) * 1993-12-01 1995-07-04 United Microelectronics Corporation Self-aligned method for forming polysilicon word lines on top of gate electrodes to increase capacitance of a stacked capacitor in a DRAM cell
JP2555965B2 (ja) * 1993-12-13 1996-11-20 日本電気株式会社 半導体装置の製造方法
GB2285176B (en) * 1993-12-27 1997-11-26 Hyundai Electronics Ind Structure and manufacturing method of a charge storage electrode
KR0131744B1 (ko) * 1993-12-28 1998-04-15 김주용 반도체 소자의 캐패시터 제조방법
KR950021644A (ko) * 1993-12-31 1995-07-26 김주용 반도체 기억장치 및 그 제조방법
KR0135803B1 (ko) * 1994-05-13 1998-04-24 김광호 상.하로 분리된 커패시터를 갖는 반도체 메모리장치 및 그 제조방법
JPH0837240A (ja) * 1994-07-22 1996-02-06 Nec Corp 半導体装置の製造方法
KR100271111B1 (ko) * 1995-02-28 2000-12-01 로데릭 더블류 루이스 재피착을사용하여구조를형성하는방법
JPH0917968A (ja) * 1995-06-27 1997-01-17 Mitsubishi Electric Corp 半導体装置とその製造方法
KR0155856B1 (ko) * 1995-07-20 1998-10-15 김광호 원통형 캐패시터의 제조방법
KR100224710B1 (ko) 1995-10-10 1999-10-15 윤종용 반도체 장치의 커패시터 제조 방법
KR0155918B1 (ko) * 1995-11-03 1998-12-01 김광호 선택적 텅스텐질화박막을 이용한 반도체장치의 캐패시터 형성방법
US5712202A (en) * 1995-12-27 1998-01-27 Vanguard International Semiconductor Corporation Method for fabricating a multiple walled crown capacitor of a semiconductor device
US6218237B1 (en) 1996-01-03 2001-04-17 Micron Technology, Inc. Method of forming a capacitor
US5733808A (en) * 1996-01-16 1998-03-31 Vanguard International Semiconductor Corporation Method for fabricating a cylindrical capacitor for a semiconductor device
JP2751906B2 (ja) * 1996-01-17 1998-05-18 日本電気株式会社 容量素子の形成方法
JPH09199680A (ja) * 1996-01-17 1997-07-31 Nec Corp 半導体装置およびその製造方法
KR100207463B1 (ko) * 1996-02-26 1999-07-15 윤종용 반도체 장치의 커패시터 제조방법
KR100207462B1 (ko) * 1996-02-26 1999-07-15 윤종용 반도체 장치의 커패시터 제조방법
KR100207466B1 (ko) * 1996-02-28 1999-07-15 윤종용 반도체 장치의 커패시터 제조방법
US5851882A (en) 1996-05-06 1998-12-22 Micron Technology, Inc. ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
KR100219483B1 (ko) * 1996-06-03 1999-09-01 윤종용 반도체 장치의 커패시터 제조방법
TW312037B (en) * 1996-08-07 1997-08-01 United Microelectronics Corp Manufacturing method of capacitor of dynamic random access memory
GB2324409A (en) * 1996-08-07 1998-10-21 United Microelectronics Corp Method of forming data storage capacitors in dynamic random access memory cells
US5759890A (en) * 1996-08-16 1998-06-02 United Microelectronics Corporation Method for fabricating a tree-type capacitor structure for a semiconductor memory device
JP2930110B2 (ja) * 1996-11-14 1999-08-03 日本電気株式会社 半導体記憶装置およびその製造方法
KR100236069B1 (ko) * 1996-12-26 1999-12-15 김영환 캐패시터 및 그 제조방법
US6548346B1 (en) * 1997-04-04 2003-04-15 United Microelectronics Corp. Process for forming DRAM cell
US6218260B1 (en) 1997-04-22 2001-04-17 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
KR100234379B1 (ko) 1997-06-10 1999-12-15 윤종용 비트라인의 산화를 방지하기 위한 반도체 메모리장치의 제조방법
TW463289B (en) * 1997-06-27 2001-11-11 Taiwan Semiconductor Mfg Method for forming annular capacitor of memory
KR100244306B1 (ko) * 1997-07-29 2000-02-01 김영환 반도체 소자의 커패시터의 제조 방법
US6027860A (en) 1997-08-13 2000-02-22 Micron Technology, Inc. Method for forming a structure using redeposition of etchable layer
JP3090198B2 (ja) * 1997-08-21 2000-09-18 日本電気株式会社 半導体装置の構造およびその製造方法
JP3221376B2 (ja) 1997-11-07 2001-10-22 日本電気株式会社 半導体装置の製造方法
JPH11168199A (ja) * 1997-12-02 1999-06-22 Nippon Steel Corp 半導体記憶装置及びその製造方法
US5879986A (en) * 1998-02-27 1999-03-09 Vangaurd International Semiconductor Corporation Method for fabrication of a one gigabit capacitor over bit line DRAM cell with an area equal to eight times the used minimum feature
KR100301370B1 (ko) * 1998-04-29 2001-10-27 윤종용 디램셀커패시터의제조방법
JP2000077619A (ja) * 1998-08-27 2000-03-14 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US6030878A (en) * 1998-11-25 2000-02-29 United Microelectronics Corp. Method of fabricating a dynamic random access memory capacitor
KR100363083B1 (ko) 1999-01-20 2002-11-30 삼성전자 주식회사 반구형 그레인 커패시터 및 그 형성방법
US6214687B1 (en) 1999-02-17 2001-04-10 Micron Technology, Inc. Method of forming a capacitor and a capacitor construction
KR100317042B1 (ko) 1999-03-18 2001-12-22 윤종용 반구형 알갱이 실리콘을 가지는 실린더형 커패시터 및 그 제조방법
US6136661A (en) * 1999-06-14 2000-10-24 Vanguard International Semiconductor Corporation Method to fabricate capacitor structures with very narrow features using silyated photoresist
KR100450671B1 (ko) 2002-02-26 2004-10-01 삼성전자주식회사 스토리지 노드 콘택플러그를 갖는 반도체 소자의 제조방법
KR100546395B1 (ko) * 2003-11-17 2006-01-26 삼성전자주식회사 반도체소자의 커패시터 및 그 제조방법
US20070037349A1 (en) * 2004-04-30 2007-02-15 Martin Gutsche Method of forming electrodes
DE102004021401B4 (de) * 2004-04-30 2011-02-03 Qimonda Ag Herstellungsverfahren für ein Stapelkondensatorfeld
DE102005042524A1 (de) * 2005-09-07 2007-03-08 Infineon Technologies Ag Verfahren zur Herstellung von Stapelkondensatoren für dynamische Speicherzellen
US20080113483A1 (en) * 2006-11-15 2008-05-15 Micron Technology, Inc. Methods of etching a pattern layer to form staggered heights therein and intermediate semiconductor device structures

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0294840A2 (en) * 1987-06-12 1988-12-14 Nec Corporation Semiconductor memory device
EP0295709A2 (en) * 1987-06-17 1988-12-21 Fujitsu Limited Dynamic random access memory device and method of producing the same
EP0318277A2 (en) * 1987-11-25 1989-05-31 Fujitsu Limited Dynamic random access memory device and method for producing the same
US5023203A (en) * 1988-07-28 1991-06-11 Korea Electronics & Telecommunications Research Institute Et Al. Method of patterning fine line width semiconductor topology using a spacer
JPH03151663A (ja) * 1989-11-08 1991-06-27 Mitsubishi Electric Corp 半導体記憶装置
EP0443439A2 (de) * 1990-02-23 1991-08-28 INSTITUT FÜR HALBLEITERPHYSIK FRANKFURT (ODER) GmbH Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung
US5047817A (en) * 1988-06-10 1991-09-10 Mitsubishi Denki Kabushiki Kasiha Stacked capacitor for semiconductor memory device
GB2242782A (en) * 1990-04-04 1991-10-09 Gold Star Electronics Process and structure for a transistor-capacitor cell
GB2244597A (en) * 1990-06-02 1991-12-04 Samsung Electronics Co Ltd A method for manufacturing dram cells
US5084405A (en) * 1991-06-07 1992-01-28 Micron Technology, Inc. Process to fabricate a double ring stacked cell structure
EP0487951A1 (en) * 1990-11-08 1992-06-03 Nec Corporation Method of fabricating a stacked capacitator DRAM cell
GB2250377A (en) * 1990-11-29 1992-06-03 Samsung Electronics Co Ltd Method for manufacturing a semiconductor device with villus type capacitor
GB2252447A (en) * 1991-01-30 1992-08-05 Samsung Electronics Co Ltd Highly integrated semiconductor DRAM
EP0415530B1 (en) * 1989-07-05 1994-11-30 Fujitsu Limited Semiconductor memory device having stacked capacitor and method of producing the same

Family Cites Families (8)

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JPH0736437B2 (ja) * 1985-11-29 1995-04-19 株式会社日立製作所 半導体メモリの製造方法
JPH07103463B2 (ja) * 1986-11-18 1995-11-08 日新製鋼株式会社 深絞り性に優れた合金化亜鉛メツキ鋼板の製造方法
JP2755591B2 (ja) * 1988-03-25 1998-05-20 株式会社東芝 半導体記憶装置
JP2724209B2 (ja) * 1989-06-20 1998-03-09 シャープ株式会社 半導体メモリ素子の製造方法
JPH03142966A (ja) * 1989-10-30 1991-06-18 Sanyo Electric Co Ltd 半導体装置の製造方法
US5164337A (en) * 1989-11-01 1992-11-17 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor device having a capacitor in a stacked memory cell
KR960002078B1 (ko) * 1989-12-29 1996-02-10 샤프 가부시끼가이샤 반도체메모리의 제조방법
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Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0294840A2 (en) * 1987-06-12 1988-12-14 Nec Corporation Semiconductor memory device
EP0295709A2 (en) * 1987-06-17 1988-12-21 Fujitsu Limited Dynamic random access memory device and method of producing the same
EP0318277A2 (en) * 1987-11-25 1989-05-31 Fujitsu Limited Dynamic random access memory device and method for producing the same
US5047817A (en) * 1988-06-10 1991-09-10 Mitsubishi Denki Kabushiki Kasiha Stacked capacitor for semiconductor memory device
US5023203A (en) * 1988-07-28 1991-06-11 Korea Electronics & Telecommunications Research Institute Et Al. Method of patterning fine line width semiconductor topology using a spacer
EP0415530B1 (en) * 1989-07-05 1994-11-30 Fujitsu Limited Semiconductor memory device having stacked capacitor and method of producing the same
JPH03151663A (ja) * 1989-11-08 1991-06-27 Mitsubishi Electric Corp 半導体記憶装置
EP0443439A2 (de) * 1990-02-23 1991-08-28 INSTITUT FÜR HALBLEITERPHYSIK FRANKFURT (ODER) GmbH Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung
GB2242782A (en) * 1990-04-04 1991-10-09 Gold Star Electronics Process and structure for a transistor-capacitor cell
GB2244597A (en) * 1990-06-02 1991-12-04 Samsung Electronics Co Ltd A method for manufacturing dram cells
EP0487951A1 (en) * 1990-11-08 1992-06-03 Nec Corporation Method of fabricating a stacked capacitator DRAM cell
GB2250377A (en) * 1990-11-29 1992-06-03 Samsung Electronics Co Ltd Method for manufacturing a semiconductor device with villus type capacitor
GB2252447A (en) * 1991-01-30 1992-08-05 Samsung Electronics Co Ltd Highly integrated semiconductor DRAM
US5084405A (en) * 1991-06-07 1992-01-28 Micron Technology, Inc. Process to fabricate a double ring stacked cell structure

Also Published As

Publication number Publication date
US5330614A (en) 1994-07-19
FR2680913A1 (fr) 1993-03-05
GB9218177D0 (en) 1992-10-14
IT1259016B (it) 1996-03-11
FR2680913B1 (fr) 1998-04-03
DE4224946A1 (de) 1993-03-04
TW243541B (enExample) 1995-03-21
ITMI921873A0 (it) 1992-07-30
GB2259187A (en) 1993-03-03
JP2677490B2 (ja) 1997-11-17
JPH05218333A (ja) 1993-08-27
ITMI921873A1 (it) 1994-01-30

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100826