US5851882A - ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask - Google Patents

ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask Download PDF

Info

Publication number
US5851882A
US5851882A US08642769 US64276996A US5851882A US 5851882 A US5851882 A US 5851882A US 08642769 US08642769 US 08642769 US 64276996 A US64276996 A US 64276996A US 5851882 A US5851882 A US 5851882A
Authority
US
Grant status
Grant
Patent type
Prior art keywords
oxide
fig
array
doped
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08642769
Inventor
Steven T. Harshfield
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/112Read-only memory structures [ROM] and multistep manufacturing processes therefor
    • H01L27/11206Programmable ROM [PROM], e.g. memory cells comprising a transistor and a fuse or an antifuse
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/112Read-only memory structures [ROM] and multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/947Subphotolithographic processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/983Zener diodes

Abstract

A cost-competitive, dense, CMOS compatible ZPROM memory array design and method of manufacture is disclosed. The method of manufacture includes a novel method for forming extremely thin diodes and thin strips of other materials such as conductors by using oxide spacers as an etching mask.

Description

FIELD OF THE INVENTION

This invention relates generally to the field of integrated circuit devices, and more particularly relates to an integrated circuit memory comprising an array of Zener diodes in series with programmable memory elements and to a design and method of manufacturing such a device. Another aspect of the invention relates to etching techniques for the formation of extremely thin structures for integrated circuit technologies.

BACKGROUND OF THE INVENTION

A ZPROM (Zener Programmable Read Only Memory) is a relatively new type of one time programmable non-volatile memory. In U.S. Pat. No. 5,379,250, for example, the ZPROM array is composed of a plurality of interconnected ZPROM cells which are randomly accessible with a unique biasing scheme. The contents of that patent disclose how to use a ZPROM array manufactured using the processes disclosed herein and are incorporated by reference.

The ZPROM cell is composed of a Zener diode in series with a thin dielectric antifuse. The Zener diode allows electrical access to the antifuse and the antifuse stores one "bit" of memory. Initially, the antifuse is non-conductive and is regarded as being in the "zero" state. If a "one" state is written to the memory cell, the antifuse becomes conductive.

A ZPROM has many unique characteristics. First, the ZPROM cell is a two terminal device which simplifies memory array construction and operation. Next, a Zener diode has more current capacity than other memory access devices of the same size. Most importantly, the unique biasing of the Zener array prohibits current leakage to the substrate by parasitic bipolar transistors. Parasitic bipolar transistors are a major disadvantage in a standard diode array, which is the most common two terminal access device array.

A ZPROM has the disadvantage of being a one time programmable memory. To compete with reprogrammable memories, it must contain clear advantages in other areas. Fortunately, the nature of the ZPROM allows many consumer advantages: low cost, massive memory, speed, and reliable programming. Its small cell size and minimization of parasitic transistors effects permit a higher cell density than most other memory arrays. A higher cell density means economical memory and massive memory storage per device. The Zener diode high current capacity means faster memory access, as well as ample current for reliable programming. The disclosed ZPROM array structure seeks to maximize these natural advantages.

SUMMARY OF THE INVENTION

In accordance with the present invention, a cost-competitive, dense, high current ZPROM array design and method of manufacture are disclosed which allows the ZPROM array to be easily embedded in CMOS applications. Efficient integration of ZPROM manufacture with CMOS manufacture is enabled by the use of the CMOS gate polysilicon and gate oxide in the manufacture of the array. Furthermore, because the processing steps of the array involve relatively few heat cycles, minimal disruption of previously engineered CMOS dopant profiles will result.

In accordance with one aspect of the present invention, a manufacturing method for the ZPROM array is disclosed which comprises fabricating an extremely thin diode, using previously deposited silicon dioxide (oxide) spacers as an etching mask. This allows for the manufacture of a vertical diode that is substantially as thick as the overlying spacer. Spacers have traditionally not been used in semiconductor processing as stand alone etching masks but only as offset masks for ion implantation in the formation of transistor junctions. This novel use of spacers as stand alone masks may also be extended to the etching of other underlying materials into much thinner strips than can currently be fabricated using conventional lithographic methods.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross section of a substrate showing the status of the manufacturing process before the cells in the array are formed.

FIG. 2 is a cross section of a substrate showing the resulting structure after a thick oxide has been deposited on the periphery and spacers have been formed.

FIG. 3A is a cross section of a substrate showing the resulting structure in the array after a first trench etch.

FIG. 3B is a cross section of a substrate showing the resulting structure in the array after a second trench etch.

FIG. 4A is a cross section of polysilicon over metal.

FIG. 4B is a cross section showing the resulting structure after polysilicon pattern and etch.

FIG. 4C is a cross section showing the resulting structure after spacers have been formed on the sides of the polysilicon.

FIG. 4D is a cross section showing the resulting structure after the remaining polysilicon has been removed.

FIG. 4E is a cross section showing the resulting structure after an anisotropic metal etch.

FIG. 4F is a cross section showing the resulting structure after spacer removal.

FIG. 4G is a cross section of the structure of FIG. 4C wherein the materials are left unspecified.

FIG. 5 is a cross section of a substrate showing the resulting structure in the array after silicidation.

FIG. 6 is a cross section of a substrate showing the resulting structure in the array after an oxide has been deposited, contact holes have been etched in the oxide, and after ion implantation has been performed which forms the Zener diodes.

FIG. 7 is a cross section of a substrate showing the resulting structure in the array after the antifuse dielectric, polysilicon plugs, and word lines have been formed.

FIG. 8 is a cross section of a substrate showing an alternative embodiment wherein a trench is etched in the array oxide as opposed to contact holes.

FIG. 9 is a cross section of a substrate showing an alternative embodiment wherein the antifuse dielectric is located above the polysilicon plugs.

FIG. 10 is a cross section of a substrate of an alternative embodiment showing the resulting structure in the array after a trench etch is performed.

FIG. 11 is a cross section of a substrate showing the resulting structure in the array after spacer definition.

FIG. 12 is a cross section of a substrate showing the resulting structure in the array after an overlying polysilicon layer is removed by etching.

FIG. 13 is a cross section of a substrate showing the resulting structure in the array after a second spacer definition.

FIG. 14 is a cross section of a substrate showing the resulting structure in the array after a second trench etch is performed.

FIG. 15A is a cross section of polysilicon over metal.

FIG. 15B is a cross section showing the resulting structure after pattern and polysilicon and metal etch.

FIG. 15C is a cross section showing the resulting structure after first spacers have been formed on the sides of the polysilicon and the metal.

FIG. 15D is a cross section showing the resulting structure after the remaining polysilicon has been removed.

FIG. 15E is a cross section showing the resulting structure after second spacers have been formed.

FIG. 15F is a cross section showing the resulting structure after an anisotropic metal etch.

FIG. 15G is a cross section showing the resulting structure after spacer removal, and a cross section of the structure of FIG. 4C wherein the materials are left unspecified.

BRIEF DESCRIPTION OF THE PREFERRED EMBODIMENTS

It will be appreciated that the present invention may take many forms and embodiments beyond those described herein. It is not intended that the specific embodiments that are described herein should limit the invention.

Referring to FIG. 1, a cross-section of a lightly P doped silicon crystalline substrate 101 is shown as it appears just after the formation of the CMOS transistors 111 and 112 and array hard mask 113 in accordance with the present invention. The sequence of steps performed up to this point in the process shown in FIG. 1 are as follows: after ion implantation of the periphery N-well 102, array N-well 104, and periphery P-well 103, field oxide isolation 108 is grown on the surface of the crystalline substrate 101 using traditional processing methods. Field oxide 108 and array N-well 104 are used to electrically isolate array area 115, which contains the memory cells, from periphery area 114, which contains the CMOS (Complementary-Metal-Oxide-Semiconductor) logic transistors and other support circuitry. Next, another ion implantation is performed to define a P doped region 107. One of ordinary skill in the art will understand that doping by ion implantation is used to impart different conductivities to the crystalline silicon and to promote conduction via different charge carriers (i.e., electrons in N doped silicon; holes in P doped silicon). While the depth and doping concentrations of the array N-well 104, and P doped region 107 are in part determined according to the desired Zener diode performance, reasonable, but not exclusive values are as follows: array N-well 104=1E15 to 1E16 atoms/cubic cm, depth =2 microns (or other standard well depths); P doped region 107=1E17 to 1E18, depth=0.8 microns.

Next, a high quality thermal oxide 109 is grown on the resulting structure to a preferred thickness of approximately 150 Angstroms. Oxide 109 may grow somewhat thicker on P-type layer 107, since it has a higher doping concentration than a standard well. A layer of polysilicon 110 is deposited on the surface of the structure to a preferred thickness of approximately 2,000 to 4,000 Angstroms. Polysilicon 110, after pattern and etch, acts as the gate conductor for P-type 111 and N-type 112 CMOS transistors and as the upper layer of the array hard mask 113. Oxide 109 acts as the gate oxide for P-type 111 and N-type 112 CMOS transistors and as the lower layer of the array hard mask 113. At least three photolithographic masks are needed to define polysilicon 110 and transistor junctions 105 and 106. Preferably, the P-type 111 and N-type 112 CMOS transistor gates and the array hard mask 113 are patterned and anisotropically etched out of polysilicon layer 110 by three different photolithography and etch steps. This allows for each of the CMOS transistor's junctions to be formed after the gate for the CMOS transistor is etched. For example, after the gates are etched for the P-type 111 transistors, but before the photoresist associated with the etch is removed, P-type transistor junctions 105 are formed by ion implantation. Likewise, after the gates are etched for the N-type 112 transistors, but before the photoresist associated with the etch is removed, N-type transistor junctions 106 are formed by ion implantation. These CMOS transistors are used to route signals into and out of the array. Those of ordinary skill in the art will appreciate that an effective CMOS transistor could be built using other processing enhancements besides those depicted in FIG. 1. The array hard mask 113 is used to protect the bit line area in the array from the first silicon trench etch and it serves as a definition means for the oxide spacer hard mask, as discussed in connection with FIGS. 2 and 3.

Referring to FIG. 2, a thick oxide layer 116 is deposited over all structures and is selectively removed from the array area 115. Next, a thinner conformal oxide is deposited over all structures. This oxide and the underlying oxide 109 then are subjected to an anisotropic dry etch (spacer etch) to remove them from all horizontal surfaces. What remains are oxide spacers 117 on the sides of the hard mask 113. Oxide spacers 117 form a unique etch hard mask. They will eventually stand alone, without hard mask 113, to protect the underlying silicon which will become the thin Zener diodes, as discussed in connection with FIG. 3A.

Referring to FIG. 3A, array area 115 is etched, resulting in the structure shown. A first silicon trench etch anisotropically removes the P doped region 107 from between the hard mask structures 113. The trench etches described herein should have good selectivity to etching silicon while not substantially etching oxides. The etch also removes the polysilicon 110 of the hard mask 113 and stops on oxide 109. The trench 118 has an initial depth in the range of 6,000 to 10,000 Angstroms and will most likely not penetrate the junction between the P doped region 107 and the array N-well 104. Although not shown in FIG. 3A, oxide layer 116 will protect the CMOS transistors in the periphery area 114 during the first silicon trench etch. For efficiency, the spacer etch and the first silicon trench etch can be done in sequence in the same etch machine.

Referring to FIG. 3B, array area 115 receives an oxide etch (to remove oxide 109 where exposed) and a second silicon trench etch resulting in the structure shown. Oxide spacer 117 again acts as a hard mask for both the first and second silicon trench etches. The bottom of the deep trench area 118 is in the N-well. The bottom of the shallow trench area 119 is in the P-type layer. The bottom of deep trench area 118 is at least 1,000 Angstroms below the bottom of P doped region 107 and the bottom of the shallow trench area 119 is at least 1,000 Angstroms above the bottom of the P doped region 107. The P doped region 107 is thus completely divided by the deep trench 118 to form distinct array bit lines out of the remaining P doped region 107, two of which are shown in cross-section in FIG. 3B. One of ordinary skill will appreciate that the remaining P doped region 107 will likely be very long and could run for the entire length of the array. Many ZPROM cells will ultimately be electrically connected to a single bit line, as discussed later. The P doped region 107 is recessed by trench 119 to provide an area for a low resistance bit line strap, to be discussed in connection with FIG. 5. The P doped silicon 107 under spacer 117 is left intact for eventual thin Zener diode formation and at this stage of the process stands as a silicon wall 134 which runs around the perimeter of the bit line. For the greatest efficiency, the last four etches (spacer etch, first silicon trench etch, oxide etch, and second silicon trench etch) can be done in sequence in the same etch machine.

The use spacers as etching masks as disclosed in FIGS. 3A and 3B can also be used to manufacture more than just a ZPROM array. A variety of materials underlying spacers 117 can be anisotropically etched to form extremely thin strips of the underlying material. The use of spacers as etching masks can therefore be used more generally to produce conductors of extremely thin widths that could not otherwise be fabricated because of lithography resolution limitations. For example, and referring to FIG. 4A, a metallic conductor 200 (e.g., aluminum, tungsten or titanium) is deposited on top of a substrate 210. The substrate 210 refers generally to any suitable underlying material and need not refer to crystalline silicon. For example, substrate 210 could be comprised of a nitride. Next, polysilicon 220 has been deposited over metallic conductor 210. In FIG. 4B, the polysilicon 220 has been patterned and etched by traditional techniques. In FIG. 4C, oxide spacers 117 are formed as previously discussed. In FIG. 4D, the polysilicon is then removed using any suitable etch. In FIG. 4E, an anisotropic etch is used to remove the metallic conductor 210 where ever it does not underlie the spacers 117. Finally, in FIG. 4F, the spacers are removed, leaving metallic conductor 210 into two extremely thin strips. Notice that the lateral dimension of the strips is dictated solely by the lateral dimension of the spacers.

The disclosed technique for etching thin strips of material should not be limited to the embodiment disclosed herein. In fact, one of ordinary skill will realize that any combination of materials could be used in place of metallic conductor 210, substrate 210 and polysilicon 220, and oxide spacers 117. Referring to FIG. 4G, the disclosed embodiment is replaced generically by layer 300, layer 310, layer 320, and spacers 330. To etch layer 300 into thin strips, one should select etches that will not inadvertently etch away the materials selected for layers 300, 310, and 320, and spacers 330. For instance, the etch used to form spacers 330 should not significantly attack layer 320 or layer 300 where exposed. Likewise, the etchant selected to etch material 320 to leave only the spacers 330 over layer 300 should not significantly attack layer 300 or spacers 330. After layer 320 is removed, the etchant selected to anisotropically etch layer 300 should not significantly attack layer 310 or spacers 300. Lastly, the etchant selected to remove spacers 330 should not significantly attack the remaining thin strips of layer 300 or now exposed layer 310. By keeping these etching limitations in mind, many combinations of material could by picked for layers 300, 310, 320, and spacers 330 to form thin strips in layer 300.

Returning to the manufacture of the ZPROM array in FIG. 5, oxide 121 with thickness of about 100 to 500 Angstroms is thermally grown on all exposed silicon in array area 115. This oxide growth will consume any damage done to the side of the silicon wall 134 that may have resulted from the first and second silicon trench etches. Oxide 121 also protects the junction between the P doped region 107 and the array N-well 104 from damage during the remainder of the process. Oxide 121 is then subjected to an anisotropic etch which removes oxide 121 from the horizontal surfaces, including the bottom of deep trench area 118 and the bottom of shallow trench area 119. Oxide 121 continue to protect the junctions and to provide structural support for silicon walls 134.

Next, titanium is sputtered on the surface of the structure to a preferred thickness of up to approximately 1,000 Angstroms. After sputtering, the titanium is sintered to cause the titanium to alloy with the underlying silicon where it is exposed (i.e., where no oxides are present) to form a titanium silicide. Where the titanium so sputtered overlays an oxide and therefore does not alloy during the sintering process, it can be easily etched away leaving behind the titanium silicide, thus producing the bit line straps 122 and N-well straps 123. Silicidation of the bit line is beneficial because bit line straps 122 have a relatively low resistance compared to the P doped region 107, and thus enables signals to travel more quickly down the bit lines. Likewise, the N-well straps 123 enables array N-well 104 to better maintain a constant voltage by providing a low resistance escape path for any current leaking from the array. Although the Zener diode array is less susceptible to current leakage, high current densities could cause some leakage. Another benefit of silicidation is the lateral growth of titanium silicide. The lateral growth 135 under silicon walls 134 of bit line straps 122 is good for collecting current because it increases the electric fields under the silicon wall 134. In the extreme case, the lateral ends 135 will progress during sintering completely through the P doped silicon 107 and touch the silicon walls 134. In this case, the lateral ends 135 would collect all currents flowing from the Zener diodes, thus reducing parasitic currents that could form in the substrate.

Referring to FIG. 6, an oxide 124 that is doped with boron and phosphorous is deposited on the surface of the structure. A low temperature reflow is then performed for the purpose of planarizing oxide 124, making its exposed surface substantially flat. It is well known that oxide containing boron and phosphorous, among other possible dopants, can be reflowed at relatively low temperatures. Additionally, the oxide 124 can be further planarized through the use of a chemical-mechanical process (CMP). The preferred thickness of oxide 124 after CMP or other planarizing process should be approximately 6,000 Angstroms as measured relative to the top of P doped region 107.

Next, contact holes 125 are patterned and etched in oxide 124. The dry etchant used should be anisotropic and should have good selectivity to etch oxides without etching the silicon walls 134. The effect is that the etch will remove not only oxide 124 where it is exposed, but also oxides 109 and 121 and spacers 117 (also made of oxide). The etch exposes the top and sides of either one or both silicon walls 134 of a bit line, but it should not expose more than 2,000 Angstroms of their sides measured relative to the top of P doped region 107. In FIG. 6, only one of the two silicon walls 134 on a given bit line is etched and exposed in this manner. One of ordinary skill will appreciate that contact holes 125 will ultimately define the location of the ZPROM cells and that several contact holes will be formed along a single bit line.

To form the Zener diodes, the exposed top of the silicon walls 134 must be implanted with N-type dopant, but the exposed sides of silicon walls 134 need to be protected from the implant in order to maintain a good Zener diode junction characteristics. Through the use of another oxide deposition and an anisotropic oxide etch, spacers 126 and 127 are created. Spacers 127 protect the exposed sides of silicon wall 134. With this protection, a large amount of N-type dopant is implanted into the silicon to create an N+ doped region 128. A Zener diode 129 is thus formed at the junction between P doped region 107 and N+ doped region 128. While the doping concentration and depth on N+ doped region 128 depend on desired Zener diode characteristics, a depth of 3000 Angstroms and a concentration of 1E19 atoms/cubic cm are preferred.

Referring to FIG. 7, programmable element 130 is deposited on the exposed N+ silicon 128 and is substantially uniformly over all surfaces. As noted in U.S. Pat. No. 5,379,250, programmable element 130 is preferably an antifuse and is comprised of silicon nitride (nitride), but an oxide or any material exhibiting stable electrical breakdown can be used. When programmable element 130 acts as an antifuse, a given cell will initially be non-conductive. When the cell is programmed by the application of a voltage which is high enough to cause the programmable element 130 to break down, the programmable element 130 will "antifuse" and become conductive. Programmable element 130 may also be a fuse. In this case, programmable element 130 is initially conductive, and will "fuse" and become nonconductive when a sufficiently high voltage is applied. To construct a fuse, programmable element 130 could, for instance, be comprised of a metal (e.g., platinum). When programmable element 130 acts as either a fuse or an antifuse, the cell will be programmable only one time and the effects of programming will be destructive and non-reversible. One time programmability will suffice for ROM applications. However, it is also desirable to construct the disclosed cell using a programmable element 130 which can be selectively programmed and deprogrammed. This feature would produce a cell where programming would be non-destructive and reversible, and would therefore be suitable for NVRAM (Non-volatile Random Access Memory) applications. One possible way to construct such a cell would be to use a programmable element 130 which is comprised of a chalcogenide. The electrical and physical properties of a suitable chalcogenide are disclosed in U.S. Pat. No. 5,296,716 and are incorporated herein by reference. Generally, the resistance of a suitable chalcogenide changes when high currents are passed through it, and the effects are reversible, because of a reversible transition which occurs between the chalcogenide's generally crystalline and generally amorphous states. By controlling the amount of current flowing through a given cell during programming, either a "zero" or "one" state can be expressed by differing chalcogenide resistances. A Zener diode array in which programmable element 130 is chalcogenide would therefor become a reprogrammable NVRAM, because the properties of a suitable chalcogenide would make it suitable for use as a reprogrammable element. Because of the feature of reprogrammability, the NVRAM is more useful than the ZPROM and could compete for a larger share of the memory market.

The thickness of programmable element 130 should be engineered to break down at the lowest consistent breakdown voltage possible. Similar optimization should be used if programmable element 130 were a fuse or a reprogrammable material, such as a suitable chalcogenide.

A conductive material is then deposited over programming element 130 which fills the contact holes 125 and (temporarily) covers oxide 124 (not shown). The preferred conductor is polysilicon, but tungsten, tungsten silicide, titanium nitride and aluminum are just a few of the possible conductors. With the polysilicon in place, a final heat cycle activates the CMOS dopants and the Zener diode dopants. Planarization (preferably CMP) of the polysilicon removes it from on top of oxide 124 but leaves polysilicon plugs 131 in contact holes 125, as shown in FIG. 7. The polysilicon plugs 131 serve as the top plate of the antifuse and will eventually be electrically connected to array word line.

After the polysilicon plugs 131 are formed, the periphery contact holes are created by etching through whatever oxide is remaining after planarization of oxide 124 in the periphery area 115. The periphery contact etch pattern will leave the array area 114 covered with photoresist to protect array area 114 from the contact etch. The periphery contact etch will need to be optimized to clear away remaining oxide 124 and thick oxide layer 116 over the CMOS junctions and gates where contacts are desired. While it is important to the utility of the disclosed ZPROM process that one of its advantages is the ability of the process to be efficiently used in conjunction with existing CMOS processes, the periphery contact etch is not shown in FIG. 7. Finally, a metal layer 132 is deposited over both array area 114 and periphery area 115. The metal is patterned and anisotropically etched leaving substantially vertical walls on the remaining metal patterns. The resulting metal patterns will constitute the interconnects in the periphery area 115 and the word lines in array area 114. In periphery area 115, the interconnects make contact to the CMOS junctions and gate through the periphery contact holes and carry electrical signals from device to device. In array area 114, metal layer 132 is etched in strips which run perpendicular to the bit lines and make contact to several polysilicon plugs 131 to form a single word line or row in the array. Thus, the resulting structure shown in FIG. 7 shows a cross section through a single word line.

Referring to FIG. 8, an alternate construction replaces the contact holes with a trench 133 running perpendicular to the bit lines. This is acceptable if both silicon walls 134 of a bit line are used in making Zener diodes and antifuse contacts. Per this construction, each ZPROM cell would consist of two Zener diodes (and their related antifuses) connected between the word line and the bit line in parallel. In most cases, the second Zener diode per bit line is redundant and would not hurt nor help the array operation. The trench construction allows for relaxed lithographic alignment constraints as compared to the stricter lithographic alignment requirements that are necessary for manufacturing contact holes.

Referring to FIG. 9, a third alternate construction moves programming element 130 to a position between the polysilicon plug 131 and word line 132. The benefit to having programming element 130 on top of oxide 124 and polysilicon plugs 126 is the ability to deposit certain programming films, such as chalcogenide, uniformly on a planar surface which would not otherwise deposit uniformly in holes or trenches.

An alternative embodiment of a method for forming a ZPROM array is disclosed. Referring to FIG. 10, array area 115 has been patterned and etched to form the structure shown. First, thick oxide 116 is patterned as shown. Then, using the thick oxide 116 as an etching mask, polysilicon 110 is anisotropically etched. Because the anisotropic polysilicon 110 etch will likely stop on oxide 109, oxide 109 may need to independently be anisotropically etched as well. This will remove a little of oxide 116, but not enough to be of any consequence. After oxide 109 is removed, an anisotropic trench etch is performed to remove a portion of P doped region 107 as shown. The thick oxide 116 will protect the underlying polysilicon 110 from attack during the trench etch. Alternatively, the polysilicon 110 could be patterned in the first instance by removing the thick oxide 116 form the array and patterning the polysilicon 110 by traditional techniques. The photoresist from the polysilicon 110 etch is then used instead of the thick oxide 116 to protect the underlying polysilicon 110 from attack during the trench etch. The use of this modification would result in the structure shown in FIG. 10 minus thick oxide 116.

Referring to FIG. 11, a conformal oxide is deposited over the structure and is anisotropically etched to form first spacers 401. Thick oxide 116 will be removed by the anisotropic etch which is used to form spacers 401 (if it is still present at this point in the process). Referring to FIG. 12, a first silicon trench etch is used to remove the exposed polysilicon 110 and a portion of P doped region 107. Referring to FIG. 13, another conformal oxide is deposited and anisotropically etched to form second spacers 701. Referring to FIG. 14, a second silicon trench etch is performed to produce the structure shown. This structure is basically equivalent to the structure shown in FIG. 3B, and from this point on the ZPROM array can be manufactured using the remaining steps as explained in the text accompanying FIGS. 5 to 9.

The manufacturing methods disclosed in the alternative embodiment can also be used to form extremely thin strips of a material which underlies the second spacers. Referring to FIG. 15, a metallic conductor 800 (e.g., aluminum, tungsten or titanium) is deposited on top of a substrate 810. The substrate 810 refers generally to any suitable underlying material and need not refer to crystalline silicon. For example, substrate 810 could be comprised of a nitride. Next, polysilicon 820 has been deposited over metallic conductor 810. In FIG. 15B, both the polysilicon 820 and the metallic conductor 800 have been etched to produce the structure shown. The formation of the structure may actually take place in two stages. First, the polysilicon 820 is patterned and etched using traditional means. Then, metallic conductor 800 is anisotropically etched using the polysilicon 820 as an etching mask. In FIG. 15C, first oxide spacers 830 are formed on the sides of the structure. In FIG. 15D, the remaining polysilicon is removed. In FIG. 15E, second oxide spacers 840 are formed on all substantially vertical sides of the structure. In FIG. 15F, metallic conductor 800 is anisotropically etched. Where the metallic conductor is protected by the overlying second oxide spacer 840, the metallic conductor 800 will remain.

The same etching considerations with respect to forming extremely thin strips of material that were explained in the first embodiment are equally applicable here. To reiterate, care should be taken to select etchants such that other materials are not adversely effected.

Claims (31)

What is claimed is:
1. A method for manufacturing an array of memory cells, comprising:
(a) forming a first doped region in a semiconducting substrate which is doped of opposite polarity to the substrate;
(b) forming a second doped region within the first doped region which is doped of opposite polarity to the first doped region;
(c) forming a first thin dielectric at the surface of the second doped region;
(d) forming a first layer over the first thin dielectric and selectively etching the first layer to leave only strips of the first layer;
(e) forming spacers on the edges of the remaining first layer strips to form a spacer pair;
(f) anisotropically etching the remaining structure to remove the remaining portions of the first layer while simultaneously etching a portion of the exposed second doped region but leaving the spacers and structures underlying the spacers intact;
(g) etching the remaining exposed portions of the first thin dielectric;
(h) anisotropically etching the remaining structure to remove a portion of the second doped region between a given spacer pair, and to remove the remaining portion of the exposed second doped region outside of a given spacer pair such that the first doped region is exposed, but leaving the first spacers and structures underlying the spacers intact;
(i) forming a thick dielectric over the resulting structure;
(j) etching a portion of the thick dielectric and an underlying spacer to expose a portion of the second doped region which was previously underneath the spacer;
(k) implanting the exposed portion of the second doped region with a dopant of opposite polarity to the second doped region to form a third doped region, thereby forming a diode at the junction of the second doped region and the third doped region;
(l) forming a programmable element over the third doped region; and
(m) forming a second layer and selectively etching the second layer to leave only strips of the second layer which run generally perpendicular to the remaining second doped region, whereby the second layer strips are electrically connected to the programmable element.
2. The method of claim 1, wherein the remaining portions of the second doped region function as the first set of array bit lines and the remaining portions of the second layer function as the second set of array lines.
3. The method of claim 1, wherein the first layer is comprised of polysilicon.
4. The method of claim 1, wherein the second layer is comprised of polysilicon, tungsten, tungsten silicide, titanium nitride or aluminum.
5. The method of claim 1, wherein the programming element is a dielectric.
6. The method of claim 5, wherein the dielectric is oxide or nitride.
7. The method of claim 1, wherein the programming element is a reprogrammable element.
8. The method of claim 7, wherein the reprogrammable element is chalcogenide.
9. A method for manufacturing an integrated circuit utilizing the method of claim 1, wherein the thin dielectric and first layer respectively constitute the gate dielectric and gate of the CMOS transistors which appear in the periphery.
10. A method for manufacturing an array of memory cells, the method comprising the steps of:
(a) forming a first doped region in a semiconductive substrate;
(b) forming a second doped region in the first doped region, the second doped region being doped opposite the first doped region;
(c) forming a first dielectric layer over the second doped region;
(d) forming strips of material over the first dielectric layer;
(e) forming spacers along the strips;
(f) using the spacers as a mask, performing an etching operation to form a portion of the second doped region into a plurality of bit lines;
(g) forming a second dielectric layer over the resulting structure;
(h) forming contact holes over selected spacers and removing the selected spacers to expose selected portions of the second doped region;
(i) doping the exposed selected portions of the second doped region to form a plurality of diodes;
(j) operatively coupling programmable elements to the plurality of diodes; and
(k) forming a plurality of word lines operatively coupled to at least one selected programmable element and extending generally perpendicular to the plurality of bit lines.
11. The method, as set forth in claim 10, wherein the strips of material comprise polysilicon.
12. The method, as set forth in claim 10, wherein the diodes comprise zener diodes.
13. The method, as set forth in claim 10, wherein the plurality of word lines comprise one of polysilicon, tungsten, tungsten silicide, titanium nitride, and aluminum.
14. The method, as set forth in claim 10, wherein step (f) comprises the step of forming a strapping layer on each of the plurality of bit lines.
15. The method, as set forth in claim 14, wherein the strapping layer comprises a silicide.
16. The method, as set forth in claim 15, wherein the silicide comprises titanium silicide.
17. The method, as set forth in claim 10, wherein step (f) comprises the step of forming a third dielectric layer over non-horizontal surfaces of the resulting structure.
18. The method, as set forth in claim 10, wherein the programmable element comprises a dielectric.
19. The method, as set forth in claim 10, wherein the programmable element comprises chalcogenide.
20. The method, as set forth in claim 10, wherein the programmable element is reprogrammable.
21. A method for manufacturing an array of memory cells, the method comprising the steps of:
(a) forming a first doped region in a semiconductive substrate;
(b) forming a second doped region in the first doped region, the second doped region being doped opposite the first doped region;
(c) forming a first dielectric layer over the second doped region;
(d) forming strips of material over the first dielectric layer;
(e) forming spacers along the strips;
(f) using the spacers as a mask, etching away the material strips, portions of the first dielectric layer, portions of the second doped region, and portions of the first doped region to form a plurality of bit lines;
(g) forming a second dielectric layer over the resulting structure;
(h) forming contact holes over selected spacers and removing the selected spacers to expose selected portions of the second doped region;
(i) doping the exposed selected portions of the second doped region to form a plurality of diodes;
(j) operatively coupling programmable elements to the plurality of diodes; and
(k) forming a plurality of word lines operatively coupled to at least one selected programmable element and extending generally perpendicular to the plurality of bit lines.
22. The method, as set forth in claim 21, wherein the strips of material comprise polysilicon.
23. The method, as set forth in claim 21, wherein the diodes comprise zener diodes.
24. The method, as set forth in claim 21, wherein the plurality of word lines comprise one of polysilicon, tungsten, tungsten silicide, titanium nitride, and aluminum.
25. The method, as set forth in claim 21, wherein step (f) comprises the step of forming a strapping layer on each of the plurality of bit lines.
26. The method, as set forth in claim 25, wherein the strapping layer comprises a silicide.
27. The method, as set forth in claim 26, wherein the silicide comprises titanium silicide.
28. The method, as set forth in claim 24, wherein step (f) comprises the step of forming a third dielectric layer over non-horizontal surfaces of the resulting structure.
29. The method, as set forth in claim 21, wherein the programmable element comprises a dielectric.
30. The method, as set forth in claim 21, wherein the programmable element comprises chalcogenide.
31. The method, as set forth in claim 21, wherein the programmable element is reprogrammable.
US08642769 1996-05-06 1996-05-06 ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask Expired - Lifetime US5851882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US08642769 US5851882A (en) 1996-05-06 1996-05-06 ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08642769 US5851882A (en) 1996-05-06 1996-05-06 ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
US09874811 US6413812B1 (en) 1996-05-06 2001-06-05 Methods for forming ZPROM using spacers as an etching mask

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US96911497 Division 1997-11-12 1997-11-12

Publications (1)

Publication Number Publication Date
US5851882A true US5851882A (en) 1998-12-22

Family

ID=24577938

Family Applications (2)

Application Number Title Priority Date Filing Date
US08642769 Expired - Lifetime US5851882A (en) 1996-05-06 1996-05-06 ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
US09874811 Expired - Fee Related US6413812B1 (en) 1996-05-06 2001-06-05 Methods for forming ZPROM using spacers as an etching mask

Family Applications After (1)

Application Number Title Priority Date Filing Date
US09874811 Expired - Fee Related US6413812B1 (en) 1996-05-06 2001-06-05 Methods for forming ZPROM using spacers as an etching mask

Country Status (1)

Country Link
US (2) US5851882A (en)

Cited By (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991187A (en) * 1996-05-10 1999-11-23 Micron Technology, Inc. Method for programming semiconductor junctions and for using the programming to control the operation of an integrated device
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US6448576B1 (en) * 2001-08-30 2002-09-10 Bae Systems Information And Electronic Systems Integration, Inc. Programmable chalcogenide fuse within a semiconductor device
US6514788B2 (en) * 2001-05-29 2003-02-04 Bae Systems Information And Electronic Systems Integration Inc. Method for manufacturing contacts for a Chalcogenide memory device
US6515931B2 (en) * 1996-08-20 2003-02-04 Micron Technology, Inc. Method of anti-fuse repair
US6627970B2 (en) * 2000-12-20 2003-09-30 Infineon Technologies Ag Integrated semiconductor circuit, in particular a semiconductor memory circuit, having at least one integrated electrical antifuse structure, and a method of producing the structure
US6649928B2 (en) * 2000-12-13 2003-11-18 Intel Corporation Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby
US20030228717A1 (en) * 2002-06-06 2003-12-11 Jiutao Li Co-sputter deposition of metal-doped chalcogenides
US6791885B2 (en) 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US6791859B2 (en) 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6813176B2 (en) 2001-08-30 2004-11-02 Micron Technology, Inc. Method of retaining memory state in a programmable conductor RAM
US6825135B2 (en) 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
US6836000B1 (en) 2000-03-01 2004-12-28 Micron Technology, Inc. Antifuse structure and method of use
US6838307B2 (en) 2002-04-10 2005-01-04 Micron Technology, Inc. Programmable conductor memory cell structure and method therefor
US6847535B2 (en) 2002-02-20 2005-01-25 Micron Technology, Inc. Removable programmable conductor memory card and associated read/write device and method of operation
US6849868B2 (en) 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
US6855975B2 (en) 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6858482B2 (en) 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
US6867064B2 (en) 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US6878569B2 (en) 2001-03-15 2005-04-12 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6903361B2 (en) 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
US6908808B2 (en) 2002-02-20 2005-06-21 Micron Technology, Inc. Method of forming and storing data in a multiple state memory cell
US6930909B2 (en) 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
US6937528B2 (en) 2002-03-05 2005-08-30 Micron Technology, Inc. Variable resistance memory and method for sensing same
US6951805B2 (en) 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6955940B2 (en) 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US20050275065A1 (en) * 2004-06-14 2005-12-15 Tyco Electronics Corporation Diode with improved energy impulse rating
US6998697B2 (en) 2001-08-29 2006-02-14 Micron Technology, Inc. Non-volatile resistance variable devices
US7010644B2 (en) 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US7018863B2 (en) 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US7022579B2 (en) 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
US7049009B2 (en) 2002-08-29 2006-05-23 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US7061004B2 (en) 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US7094700B2 (en) 2002-08-29 2006-08-22 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US7098068B2 (en) 2004-03-10 2006-08-29 Micron Technology, Inc. Method of forming a chalcogenide material containing device
US7115992B2 (en) 2001-11-19 2006-10-03 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US7151688B2 (en) 2004-09-01 2006-12-19 Micron Technology, Inc. Sensing of resistance variable memory devices
US7163837B2 (en) 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US7190048B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7209378B2 (en) 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US7233520B2 (en) 2005-07-08 2007-06-19 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
US7235419B2 (en) 2001-05-11 2007-06-26 Micron Technology, Inc. Method of making a memory cell
US7251154B2 (en) 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US7269044B2 (en) 2005-04-22 2007-09-11 Micron Technology, Inc. Method and apparatus for accessing a memory array
US7269079B2 (en) 2005-05-16 2007-09-11 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7277313B2 (en) 2005-08-31 2007-10-02 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
US7294527B2 (en) 2002-08-29 2007-11-13 Micron Technology Inc. Method of forming a memory cell
US7304368B2 (en) 2005-08-11 2007-12-04 Micron Technology, Inc. Chalcogenide-based electrokinetic memory element and method of forming the same
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US7317567B2 (en) 2005-08-02 2008-01-08 Micron Technology, Inc. Method and apparatus for providing color changing thin film material
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7332735B2 (en) 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US20080062736A1 (en) * 2002-02-01 2008-03-13 Hitachi, Ltd. Storage device
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7374174B2 (en) 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
US7385868B2 (en) 2003-07-08 2008-06-10 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7396699B2 (en) 2001-08-29 2008-07-08 Micron Technology, Inc. Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry
US7427770B2 (en) 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US7583551B2 (en) 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US7663133B2 (en) 2005-04-22 2010-02-16 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7692177B2 (en) 2002-08-29 2010-04-06 Micron Technology, Inc. Resistance variable memory element and its method of formation
US7723713B2 (en) 2002-02-20 2010-05-25 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US7791058B2 (en) 2006-08-29 2010-09-07 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US20100265755A1 (en) * 2009-04-15 2010-10-21 Ememory Technology Inc. One time programmable read only memory and programming method thereof
CN101593729B (en) 2009-04-22 2012-07-04 上海宏力半导体制造有限公司 Method for manufacturing silication metal electrode of OTP memory
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638441B2 (en) * 2002-01-07 2003-10-28 Macronix International Co., Ltd. Method for pitch reduction
US7268058B2 (en) * 2004-01-16 2007-09-11 Intel Corporation Tri-gate transistors and methods to fabricate same
US6875703B1 (en) * 2004-01-20 2005-04-05 International Business Machines Corporation Method for forming quadruple density sidewall image transfer (SIT) structures
US7038231B2 (en) * 2004-04-30 2006-05-02 International Business Machines Corporation Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
US7259023B2 (en) * 2004-09-10 2007-08-21 Intel Corporation Forming phase change memory arrays
KR100682937B1 (en) * 2005-02-17 2007-02-15 삼성전자주식회사 Phase change memory device and fabricating method of the same
US7638855B2 (en) * 2005-05-06 2009-12-29 Macronix International Co., Ltd. Anti-fuse one-time-programmable nonvolatile memory
US7859026B2 (en) * 2006-03-16 2010-12-28 Spansion Llc Vertical semiconductor device
US7795080B2 (en) * 2007-01-15 2010-09-14 Sandisk Corporation Methods of forming integrated circuit devices using composite spacer structures
US7773403B2 (en) * 2007-01-15 2010-08-10 Sandisk Corporation Spacer patterns using assist layer for high density semiconductor devices
US7888200B2 (en) * 2007-01-31 2011-02-15 Sandisk 3D Llc Embedded memory in a CMOS circuit and methods of forming the same
US7868388B2 (en) * 2007-01-31 2011-01-11 Sandisk 3D Llc Embedded memory in a CMOS circuit and methods of forming the same

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717852A (en) * 1971-09-17 1973-02-20 Ibm Electronically rewritable read-only memory using via connections
US4203123A (en) * 1977-12-12 1980-05-13 Burroughs Corporation Thin film memory device employing amorphous semiconductor materials
GB2065972A (en) * 1979-12-13 1981-07-01 Energy Conversion Devices Inc A Programmable Cell for Use in Programmable Memory Arrays
JPS60136099A (en) * 1983-12-23 1985-07-19 Fujitsu Ltd Programmable read-only memory
US4598386A (en) * 1984-04-18 1986-07-01 Roesner Bruce B Reduced-area, read-only memory
US4881114A (en) * 1986-05-16 1989-11-14 Actel Corporation Selectively formable vertical diode circuit element
JPH03225864A (en) * 1990-01-30 1991-10-04 Sharp Corp Programmable read only memory
US5130777A (en) * 1991-01-04 1992-07-14 Actel Corporation Apparatus for improving antifuse programming yield and reducing antifuse programming time
US5296716A (en) * 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5379250A (en) * 1993-08-20 1995-01-03 Micron Semiconductor, Inc. Zener programmable read only memory

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4648937A (en) 1985-10-30 1987-03-10 International Business Machines Corporation Method of preventing asymmetric etching of lines in sub-micrometer range sidewall images transfer
US4808545A (en) 1987-04-20 1989-02-28 International Business Machines Corporation High speed GaAs MESFET having refractory contacts and a self-aligned cold gate fabrication process
US4838991A (en) 1987-10-30 1989-06-13 International Business Machines Corporation Process for defining organic sidewall structures
US5330614A (en) 1991-08-31 1994-07-19 Samsung Electronics Co., Ltd. Manufacturing method of a capacitor having a storage electrode whose sidewall is positively inclined with respect to the horizontal surface
DE69312676T2 (en) * 1993-02-17 1997-12-04 Sgs Thomson Microelectronics Process for the production of integrated devices including non-volatile memory and transistors with tunnel oxide protection
KR970003168B1 (en) 1993-05-19 1997-03-14 김광호 Method for manufacturing a capacitor in semiconductor memory device
JPH0738068A (en) 1993-06-28 1995-02-07 Mitsubishi Electric Corp Semiconductor device and its manufacture
US5599738A (en) 1995-12-11 1997-02-04 Motorola Methods of fabrication of submicron features in semiconductor devices

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717852A (en) * 1971-09-17 1973-02-20 Ibm Electronically rewritable read-only memory using via connections
US4203123A (en) * 1977-12-12 1980-05-13 Burroughs Corporation Thin film memory device employing amorphous semiconductor materials
GB2065972A (en) * 1979-12-13 1981-07-01 Energy Conversion Devices Inc A Programmable Cell for Use in Programmable Memory Arrays
JPS60136099A (en) * 1983-12-23 1985-07-19 Fujitsu Ltd Programmable read-only memory
US4598386A (en) * 1984-04-18 1986-07-01 Roesner Bruce B Reduced-area, read-only memory
US4881114A (en) * 1986-05-16 1989-11-14 Actel Corporation Selectively formable vertical diode circuit element
JPH03225864A (en) * 1990-01-30 1991-10-04 Sharp Corp Programmable read only memory
US5130777A (en) * 1991-01-04 1992-07-14 Actel Corporation Apparatus for improving antifuse programming yield and reducing antifuse programming time
US5296716A (en) * 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5379250A (en) * 1993-08-20 1995-01-03 Micron Semiconductor, Inc. Zener programmable read only memory

Cited By (166)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5991187A (en) * 1996-05-10 1999-11-23 Micron Technology, Inc. Method for programming semiconductor junctions and for using the programming to control the operation of an integrated device
US6515931B2 (en) * 1996-08-20 2003-02-04 Micron Technology, Inc. Method of anti-fuse repair
US6825107B2 (en) 1996-10-02 2004-11-30 Micron Technology, Inc. Method for fabricating a memory chip
US6781145B2 (en) 1996-10-02 2004-08-24 Micron Technology, Inc. Controlable ovonic phase-change semiconductor memory device
US7935950B2 (en) 1996-10-02 2011-05-03 Round Rock Research, Llc Controllable ovonic phase-change semiconductor memory device and methods of programming the same
US20030127669A1 (en) * 1996-10-02 2003-07-10 Doan Trung T. Controllable ovanic phase-change semiconductor memory device
US6897467B2 (en) 1996-10-02 2005-05-24 Micron Technology, Inc. Controllable ovanic phase-change semiconductor memory device
US7253430B2 (en) 1996-10-02 2007-08-07 Micron Technology, Inc. Controllable ovonic phase-change semiconductor memory device
US20080019167A1 (en) * 1996-10-02 2008-01-24 Micron Technology, Inc. Controllable ovonic phase-change semiconductor memory device and methods of programming the same
US20040036065A1 (en) * 1996-10-02 2004-02-26 Doan Trung T. Controllable ovonic phase-change semiconductor memory device and methods of fabricating the same
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US7071534B2 (en) 2000-03-01 2006-07-04 Micron Technology, Inc. Antifuse structure and method of use
US6836000B1 (en) 2000-03-01 2004-12-28 Micron Technology, Inc. Antifuse structure and method of use
US20050029622A1 (en) * 2000-03-01 2005-02-10 Micron Technology, Inc. Antifuse structure and method of use
US6649928B2 (en) * 2000-12-13 2003-11-18 Intel Corporation Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby
US6627970B2 (en) * 2000-12-20 2003-09-30 Infineon Technologies Ag Integrated semiconductor circuit, in particular a semiconductor memory circuit, having at least one integrated electrical antifuse structure, and a method of producing the structure
US6949453B2 (en) 2001-03-15 2005-09-27 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US7528401B2 (en) 2001-03-15 2009-05-05 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6974965B2 (en) 2001-03-15 2005-12-13 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6878569B2 (en) 2001-03-15 2005-04-12 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US7687793B2 (en) 2001-05-11 2010-03-30 Micron Technology, Inc. Resistance variable memory cells
US7235419B2 (en) 2001-05-11 2007-06-26 Micron Technology, Inc. Method of making a memory cell
US6514788B2 (en) * 2001-05-29 2003-02-04 Bae Systems Information And Electronic Systems Integration Inc. Method for manufacturing contacts for a Chalcogenide memory device
US6951805B2 (en) 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US7396699B2 (en) 2001-08-29 2008-07-08 Micron Technology, Inc. Method of forming non-volatile resistance variable devices and method of forming a programmable memory cell of memory circuitry
US7348205B2 (en) 2001-08-29 2008-03-25 Micron Technology, Inc. Method of forming resistance variable devices
US6955940B2 (en) 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US7863597B2 (en) 2001-08-29 2011-01-04 Micron Technology, Inc. Resistance variable memory devices with passivating material
US6998697B2 (en) 2001-08-29 2006-02-14 Micron Technology, Inc. Non-volatile resistance variable devices
US6813176B2 (en) 2001-08-30 2004-11-02 Micron Technology, Inc. Method of retaining memory state in a programmable conductor RAM
US6448576B1 (en) * 2001-08-30 2002-09-10 Bae Systems Information And Electronic Systems Integration, Inc. Programmable chalcogenide fuse within a semiconductor device
US6692994B2 (en) 2001-08-30 2004-02-17 Bae Systems, Information And Electronic Systems Integration, Inc. Method for manufacturing a programmable chalcogenide fuse within a semiconductor device
US7115504B2 (en) 2001-11-19 2006-10-03 Micron Technology, Inc. Method of forming electrode structure for use in an integrated circuit
US7332401B2 (en) 2001-11-19 2008-02-19 Micron Technology, Ing. Method of fabricating an electrode structure for use in an integrated circuit
US7115992B2 (en) 2001-11-19 2006-10-03 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US7002833B2 (en) 2001-11-20 2006-02-21 Micron Technology, Inc. Complementary bit resistance memory sensor and method of operation
US7869249B2 (en) 2001-11-20 2011-01-11 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US7366003B2 (en) 2001-11-20 2008-04-29 Micron Technology, Inc. Method of operating a complementary bit resistance memory sensor and method of operation
US6791859B2 (en) 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US7242603B2 (en) 2001-11-20 2007-07-10 Micron Technology, Inc. Method of operating a complementary bit resistance memory sensor
US20100188877A1 (en) * 2002-02-01 2010-07-29 Hitachi, Ltd. Storage device
US7719870B2 (en) * 2002-02-01 2010-05-18 Hitachi, Ltd. Storage device
US20080062736A1 (en) * 2002-02-01 2008-03-13 Hitachi, Ltd. Storage device
US6867064B2 (en) 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US6954385B2 (en) 2002-02-19 2005-10-11 Micron Technology, Inc. Method and apparatus for sensing resistive memory state
US6791885B2 (en) 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US7723713B2 (en) 2002-02-20 2010-05-25 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US7202520B2 (en) 2002-02-20 2007-04-10 Micron Technology, Inc. Multiple data state memory cell
US6908808B2 (en) 2002-02-20 2005-06-21 Micron Technology, Inc. Method of forming and storing data in a multiple state memory cell
US8263958B2 (en) 2002-02-20 2012-09-11 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6847535B2 (en) 2002-02-20 2005-01-25 Micron Technology, Inc. Removable programmable conductor memory card and associated read/write device and method of operation
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US7498231B2 (en) 2002-02-20 2009-03-03 Micron Technology, Inc. Multiple data state memory cell
US6937528B2 (en) 2002-03-05 2005-08-30 Micron Technology, Inc. Variable resistance memory and method for sensing same
US6849868B2 (en) 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
US7030405B2 (en) 2002-03-14 2006-04-18 Micron Technology, Inc. Method and apparatus for resistance variable material cells
US6858482B2 (en) 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
US7547905B2 (en) 2002-04-10 2009-06-16 Micron Technology, Inc. Programmable conductor memory cell structure and method therefor
US6855975B2 (en) 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US7132675B2 (en) 2002-04-10 2006-11-07 Micron Technology, Inc. Programmable conductor memory cell structure and method therefor
US6864500B2 (en) 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
US7112484B2 (en) 2002-04-10 2006-09-26 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6838307B2 (en) 2002-04-10 2005-01-04 Micron Technology, Inc. Programmable conductor memory cell structure and method therefor
US7479650B2 (en) 2002-04-10 2009-01-20 Micron Technology, Inc. Method of manufacture of programmable conductor memory
US7446393B2 (en) 2002-06-06 2008-11-04 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US6858465B2 (en) 2002-06-06 2005-02-22 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
US7202104B2 (en) 2002-06-06 2007-04-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US6825135B2 (en) 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
US20030228717A1 (en) * 2002-06-06 2003-12-11 Jiutao Li Co-sputter deposition of metal-doped chalcogenides
US6890790B2 (en) 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US7964436B2 (en) 2002-06-06 2011-06-21 Round Rock Research, Llc Co-sputter deposition of metal-doped chalcogenides
US7209378B2 (en) 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US7459764B2 (en) 2002-08-22 2008-12-02 Micron Technology, Inc. Method of manufacture of a PCRAM memory cell
US7550818B2 (en) 2002-08-22 2009-06-23 Micron Technology, Inc. Method of manufacture of a PCRAM memory cell
US7018863B2 (en) 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US7564731B2 (en) 2002-08-29 2009-07-21 Micron Technology, Inc. Software refreshed memory device and method
US7692177B2 (en) 2002-08-29 2010-04-06 Micron Technology, Inc. Resistance variable memory element and its method of formation
US7307908B2 (en) 2002-08-29 2007-12-11 Micron Technology, Inc. Software refreshed memory device and method
US7944768B2 (en) 2002-08-29 2011-05-17 Micron Technology, Inc. Software refreshed memory device and method
US7163837B2 (en) 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US7294527B2 (en) 2002-08-29 2007-11-13 Micron Technology Inc. Method of forming a memory cell
US7049009B2 (en) 2002-08-29 2006-05-23 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US7056762B2 (en) 2002-08-29 2006-06-06 Micron Technology, Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US7364644B2 (en) 2002-08-29 2008-04-29 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US7010644B2 (en) 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US7768861B2 (en) 2002-08-29 2010-08-03 Micron Technology, Inc. Software refreshed memory device and method
US7094700B2 (en) 2002-08-29 2006-08-22 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US9552986B2 (en) 2002-08-29 2017-01-24 Micron Technology, Inc. Forming a memory device using sputtering to deposit silver-selenide film
US20070035041A1 (en) * 2003-03-14 2007-02-15 Li Li Methods of forming and using memory cell structures
US7410863B2 (en) 2003-03-14 2008-08-12 Micron Technology, Inc. Methods of forming and using memory cell structures
US7126179B2 (en) 2003-03-14 2006-10-24 Micron Technology, Inc. Memory cell intermediate structure
US7022579B2 (en) 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
US6930909B2 (en) 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
US7385868B2 (en) 2003-07-08 2008-06-10 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7061004B2 (en) 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
US7491963B2 (en) 2003-09-17 2009-02-17 Micron Technology, Inc. Non-volatile memory structure
US7276722B2 (en) 2003-09-17 2007-10-02 Micron Technology, Inc. Non-volatile memory structure
US6903361B2 (en) 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
US6946347B2 (en) 2003-09-17 2005-09-20 Micron Technology, Inc. Non-volatile memory structure
US7583551B2 (en) 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US9142263B2 (en) 2004-03-10 2015-09-22 Round Rock Research, Llc Power management control and controlling memory refresh operations
US7098068B2 (en) 2004-03-10 2006-08-29 Micron Technology, Inc. Method of forming a chalcogenide material containing device
US8619485B2 (en) 2004-03-10 2013-12-31 Round Rock Research, Llc Power management control and controlling memory refresh operations
US7459336B2 (en) 2004-03-10 2008-12-02 Micron Technology, Inc. Method of forming a chalcogenide material containing device
US20070166942A1 (en) * 2004-06-14 2007-07-19 Cogan Adrian I Circuit protection method using diode with improved energy impulse rating
US20050275065A1 (en) * 2004-06-14 2005-12-15 Tyco Electronics Corporation Diode with improved energy impulse rating
US7932133B2 (en) 2004-06-14 2011-04-26 Tyco Electronics Corporation Circuit protection method using diode with improved energy impulse rating
US7282783B2 (en) 2004-07-19 2007-10-16 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7749853B2 (en) 2004-07-19 2010-07-06 Microntechnology, Inc. Method of forming a variable resistance memory device comprising tin selenide
US7348209B2 (en) 2004-07-19 2008-03-25 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7759665B2 (en) 2004-07-19 2010-07-20 Micron Technology, Inc. PCRAM device with switching glass layer
US7190048B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7924603B2 (en) 2004-08-12 2011-04-12 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7994491B2 (en) 2004-08-12 2011-08-09 Micron Technology, Inc. PCRAM device with switching glass layer
US8334186B2 (en) 2004-08-12 2012-12-18 Micron Technology, Inc. Method of forming a memory device incorporating a resistance variable chalcogenide element
US7393798B2 (en) 2004-08-12 2008-07-01 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7586777B2 (en) 2004-08-12 2009-09-08 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US8487288B2 (en) 2004-08-12 2013-07-16 Micron Technology, Inc. Memory device incorporating a resistance variable chalcogenide element
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US8895401B2 (en) 2004-08-12 2014-11-25 Micron Technology, Inc. Method of forming a memory device incorporating a resistance variable chalcogenide element
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7682992B2 (en) 2004-08-12 2010-03-23 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
US7785976B2 (en) 2004-08-12 2010-08-31 Micron Technology, Inc. Method of forming a memory device incorporating a resistance-variable chalcogenide element
US7190608B2 (en) 2004-09-01 2007-03-13 Micron Technology, Inc. Sensing of resistance variable memory devices
US7151688B2 (en) 2004-09-01 2006-12-19 Micron Technology, Inc. Sensing of resistance variable memory devices
US7910397B2 (en) 2004-12-22 2011-03-22 Micron Technology, Inc. Small electrode for resistance variable devices
US7374174B2 (en) 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
US8101936B2 (en) 2005-02-23 2012-01-24 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US7269044B2 (en) 2005-04-22 2007-09-11 Micron Technology, Inc. Method and apparatus for accessing a memory array
US7709289B2 (en) 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7663133B2 (en) 2005-04-22 2010-02-16 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7427770B2 (en) 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7700422B2 (en) 2005-04-22 2010-04-20 Micron Technology, Inc. Methods of forming memory arrays for increased bit density
US7968927B2 (en) 2005-04-22 2011-06-28 Micron Technology, Inc. Memory array for increased bit density and method of forming the same
US7366045B2 (en) 2005-05-16 2008-04-29 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US7551509B2 (en) 2005-05-16 2009-06-23 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US7269079B2 (en) 2005-05-16 2007-09-11 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US7233520B2 (en) 2005-07-08 2007-06-19 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
US7643333B2 (en) 2005-07-08 2010-01-05 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
US7940556B2 (en) 2005-08-01 2011-05-10 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7701760B2 (en) 2005-08-01 2010-04-20 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7274034B2 (en) 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7433227B2 (en) 2005-08-01 2008-10-07 Micron Technolohy, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7663137B2 (en) 2005-08-02 2010-02-16 Micron Technology, Inc. Phase change memory cell and method of formation
US7317567B2 (en) 2005-08-02 2008-01-08 Micron Technology, Inc. Method and apparatus for providing color changing thin film material
US7332735B2 (en) 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US8652903B2 (en) 2005-08-09 2014-02-18 Micron Technology, Inc. Access transistor for memory device
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US7709885B2 (en) 2005-08-09 2010-05-04 Micron Technology, Inc. Access transistor for memory device
US7304368B2 (en) 2005-08-11 2007-12-04 Micron Technology, Inc. Chalcogenide-based electrokinetic memory element and method of forming the same
US7668000B2 (en) 2005-08-15 2010-02-23 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US7251154B2 (en) 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US8189366B2 (en) 2005-08-15 2012-05-29 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US7978500B2 (en) 2005-08-15 2011-07-12 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US8611136B2 (en) 2005-08-15 2013-12-17 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
US7289349B2 (en) 2005-08-31 2007-10-30 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
US7277313B2 (en) 2005-08-31 2007-10-02 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
US7791058B2 (en) 2006-08-29 2010-09-07 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US8030636B2 (en) 2006-08-29 2011-10-04 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US20100265755A1 (en) * 2009-04-15 2010-10-21 Ememory Technology Inc. One time programmable read only memory and programming method thereof
US7872898B2 (en) * 2009-04-15 2011-01-18 Ememory Technology Inc. One time programmable read only memory and programming method thereof
CN101593729B (en) 2009-04-22 2012-07-04 上海宏力半导体制造有限公司 Method for manufacturing silication metal electrode of OTP memory

Also Published As

Publication number Publication date Type
US20020031887A1 (en) 2002-03-14 application
US6413812B1 (en) 2002-07-02 grant

Similar Documents

Publication Publication Date Title
US6037194A (en) Method for making a DRAM cell with grooved transfer device
US6251726B1 (en) Method for making an enlarged DRAM capacitor using an additional polysilicon plug as a center pillar
US5716862A (en) High performance PMOSFET using split-polysilicon CMOS process incorporating advanced stacked capacitior cells for fabricating multi-megabit DRAMS
US7087477B2 (en) FinFET SRAM cell using low mobility plane for cell stability and method for forming
US5539229A (en) MOSFET with raised STI isolation self-aligned to the gate stack
US6653733B1 (en) Conductors in semiconductor devices
US5466629A (en) Process for fabricating ferroelectric integrated circuit
US6294412B1 (en) Silicon based lateral tunneling memory cell
US7323734B2 (en) Phase changeable memory cells
US7001846B2 (en) High-density SOI cross-point memory array and method for fabricating same
US7575984B2 (en) Conductive hard mask to protect patterned features during trench etch
US20030219924A1 (en) Small area contact region, high efficiency phase change memory cell and fabrication method thereof
US5364810A (en) Methods of forming a vertical field-effect transistor and a semiconductor memory cell
US20050110983A1 (en) Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same
US7442602B2 (en) Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other
US6642102B2 (en) Barrier material encapsulation of programmable material
US6534781B2 (en) Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
US6555860B2 (en) Compositionally modified resistive electrode
US6339544B1 (en) Method to enhance performance of thermal resistor device
US7838341B2 (en) Self-aligned memory cells and method for forming
US20100163828A1 (en) Phase change memory devices and methods for fabricating the same
US6673700B2 (en) Reduced area intersection between electrode and programming element
US7482229B2 (en) DRAM cells with vertical transistors
US20040021179A1 (en) Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking region
US7833823B2 (en) Programmable resistance memory element and method for making same

Legal Events

Date Code Title Description
AS Assignment

Owner name: MICRON TECHNOLOGY, INC., IDAHO

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HARSHFIELD, STEVEN T.;REEL/FRAME:008075/0273

Effective date: 19960426

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12

AS Assignment

Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN

Free format text: SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038669/0001

Effective date: 20160426

AS Assignment

Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL

Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:038954/0001

Effective date: 20160426

AS Assignment

Owner name: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGEN

Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST;ASSIGNOR:MICRON TECHNOLOGY, INC.;REEL/FRAME:043079/0001

Effective date: 20160426