GB2293690B - Manufacturing method for a semiconductor device - Google Patents

Manufacturing method for a semiconductor device

Info

Publication number
GB2293690B
GB2293690B GB9521179A GB9521179A GB2293690B GB 2293690 B GB2293690 B GB 2293690B GB 9521179 A GB9521179 A GB 9521179A GB 9521179 A GB9521179 A GB 9521179A GB 2293690 B GB2293690 B GB 2293690B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9521179A
Other versions
GB2293690A (en
GB9521179D0 (en
Inventor
Ji-Hong Ahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019910015250A external-priority patent/KR940009611B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from GB9218177A external-priority patent/GB2259187B/en
Publication of GB9521179D0 publication Critical patent/GB9521179D0/en
Publication of GB2293690A publication Critical patent/GB2293690A/en
Application granted granted Critical
Publication of GB2293690B publication Critical patent/GB2293690B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
GB9521179A 1991-08-31 1992-08-26 Manufacturing method for a semiconductor device Expired - Fee Related GB2293690B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1019910015250A KR940009611B1 (en) 1991-08-31 1991-08-31 Manufacturing method of highly integrated semiconductor device capacitor
KR910021974 1991-11-30
KR920003339 1992-02-29
GB9218177A GB2259187B (en) 1991-08-31 1992-08-26 Semiconductor device

Publications (3)

Publication Number Publication Date
GB9521179D0 GB9521179D0 (en) 1995-12-20
GB2293690A GB2293690A (en) 1996-04-03
GB2293690B true GB2293690B (en) 1996-06-19

Family

ID=27450924

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9521179A Expired - Fee Related GB2293690B (en) 1991-08-31 1992-08-26 Manufacturing method for a semiconductor device
GB9601877A Expired - Fee Related GB2297648B (en) 1991-08-31 1992-08-26 Semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9601877A Expired - Fee Related GB2297648B (en) 1991-08-31 1992-08-26 Semiconductor device

Country Status (1)

Country Link
GB (2) GB2293690B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739060A (en) * 1996-08-16 1998-04-14 United Microelecrtronics Corporation Method of fabricating a capacitor structure for a semiconductor memory device
DE19637389C1 (en) * 1996-09-13 1997-10-16 Siemens Ag High packing density DRAM cell array production
EP0858105A3 (en) * 1997-01-06 2001-10-04 Texas Instruments Inc. Method of forming a stacked capacitor electrode for a DRAM
NL1006113C2 (en) * 1997-05-22 1998-11-25 United Microelectronics Corp Forming DRAM cell containing data storage capacitor, used for computer memory chips

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023203A (en) * 1988-07-28 1991-06-11 Korea Electronics & Telecommunications Research Institute Et Al. Method of patterning fine line width semiconductor topology using a spacer
US5084405A (en) * 1991-06-07 1992-01-28 Micron Technology, Inc. Process to fabricate a double ring stacked cell structure
EP0415530B1 (en) * 1989-07-05 1994-11-30 Fujitsu Limited Semiconductor memory device having stacked capacitor and method of producing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD299990A5 (en) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek One-transistor memory cell arrangement and method for its production
KR930009583B1 (en) * 1990-11-29 1993-10-07 삼성전자 주식회사 Method for manufacturing a semiconductor device with villus-type capacitor
KR930009593B1 (en) * 1991-01-30 1993-10-07 삼성전자 주식회사 Lsi semiconductor memory device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023203A (en) * 1988-07-28 1991-06-11 Korea Electronics & Telecommunications Research Institute Et Al. Method of patterning fine line width semiconductor topology using a spacer
EP0415530B1 (en) * 1989-07-05 1994-11-30 Fujitsu Limited Semiconductor memory device having stacked capacitor and method of producing the same
US5084405A (en) * 1991-06-07 1992-01-28 Micron Technology, Inc. Process to fabricate a double ring stacked cell structure

Also Published As

Publication number Publication date
GB2297648B (en) 1996-10-23
GB2293690A (en) 1996-04-03
GB9521179D0 (en) 1995-12-20
GB9601877D0 (en) 1996-04-03
GB2297648A (en) 1996-08-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100826