GB9601877D0 - Semiconductor device and a manufacturing method therefor - Google Patents

Semiconductor device and a manufacturing method therefor

Info

Publication number
GB9601877D0
GB9601877D0 GBGB9601877.5A GB9601877A GB9601877D0 GB 9601877 D0 GB9601877 D0 GB 9601877D0 GB 9601877 A GB9601877 A GB 9601877A GB 9601877 D0 GB9601877 D0 GB 9601877D0
Authority
GB
United Kingdom
Prior art keywords
manufacturing
semiconductor device
method therefor
therefor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9601877.5A
Other versions
GB2297648A (en
GB2297648B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019910015250A external-priority patent/KR940009611B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Priority claimed from GB9218177A external-priority patent/GB2259187B/en
Publication of GB9601877D0 publication Critical patent/GB9601877D0/en
Publication of GB2297648A publication Critical patent/GB2297648A/en
Application granted granted Critical
Publication of GB2297648B publication Critical patent/GB2297648B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
GB9601877A 1991-08-31 1992-08-26 Semiconductor device Expired - Fee Related GB2297648B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1019910015250A KR940009611B1 (en) 1991-08-31 1991-08-31 Manufacturing method of highly integrated semiconductor device capacitor
KR910021974 1991-11-30
KR920003339 1992-02-29
GB9218177A GB2259187B (en) 1991-08-31 1992-08-26 Semiconductor device

Publications (3)

Publication Number Publication Date
GB9601877D0 true GB9601877D0 (en) 1996-04-03
GB2297648A GB2297648A (en) 1996-08-07
GB2297648B GB2297648B (en) 1996-10-23

Family

ID=27450924

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9521179A Expired - Fee Related GB2293690B (en) 1991-08-31 1992-08-26 Manufacturing method for a semiconductor device
GB9601877A Expired - Fee Related GB2297648B (en) 1991-08-31 1992-08-26 Semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB9521179A Expired - Fee Related GB2293690B (en) 1991-08-31 1992-08-26 Manufacturing method for a semiconductor device

Country Status (1)

Country Link
GB (2) GB2293690B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739060A (en) * 1996-08-16 1998-04-14 United Microelecrtronics Corporation Method of fabricating a capacitor structure for a semiconductor memory device
DE19637389C1 (en) * 1996-09-13 1997-10-16 Siemens Ag High packing density DRAM cell array production
EP0858105A3 (en) * 1997-01-06 2001-10-04 Texas Instruments Inc. Method of forming a stacked capacitor electrode for a DRAM
NL1006113C2 (en) * 1997-05-22 1998-11-25 United Microelectronics Corp Forming DRAM cell containing data storage capacitor, used for computer memory chips

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910010043B1 (en) * 1988-07-28 1991-12-10 한국전기통신공사 Microscopic line forming method for using spacer
JPH0338061A (en) * 1989-07-05 1991-02-19 Fujitsu Ltd Semiconductor memory
DD299990A5 (en) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek One-transistor memory cell arrangement and method for its production
KR930009583B1 (en) * 1990-11-29 1993-10-07 삼성전자 주식회사 Method for manufacturing a semiconductor device with villus-type capacitor
KR930009593B1 (en) * 1991-01-30 1993-10-07 삼성전자 주식회사 Lsi semiconductor memory device and manufacturing method thereof
US5084405A (en) * 1991-06-07 1992-01-28 Micron Technology, Inc. Process to fabricate a double ring stacked cell structure

Also Published As

Publication number Publication date
GB2293690B (en) 1996-06-19
GB2297648A (en) 1996-08-07
GB9521179D0 (en) 1995-12-20
GB2297648B (en) 1996-10-23
GB2293690A (en) 1996-04-03

Similar Documents

Publication Publication Date Title
GB9218177D0 (en) Semiconductor device and a manufacturing method therefor
GB2257563B (en) A cmos semiconductor device and manufacturing method therefor
KR0134950B1 (en) Method of manufacturing a semiconductor device
GB9214440D0 (en) Semiconductor device and manufacturing method thereof
SG108807A1 (en) A semiconductor device and its manufacturing method
GB2253939B (en) Method for manufacturing a semiconductor device
KR960008517B1 (en) Semiconductor device and the manufacturing method
KR960008893B1 (en) Semiconductor device and fabricating method thereof
GB2245424B (en) A semiconductor device and methods for manufacturing semiconductor devices
GB9303864D0 (en) A semiconductor device and a method of manufacturing thereof
HK1005420A1 (en) Semiconductor device and manufacturing method thereof
KR960000962B1 (en) Semiconductor device and the manufacturing method thereof
GB9105943D0 (en) A method of manufacturing a semiconductor device
GB2285173B (en) Semiconductor device and manufacturing method thereof
PL294400A1 (en) Method of manufacturing a semiconductor device and semiconductor device manufactured using such method
EP0755070A3 (en) A semiconductor device and its manufacturing method
GB9215477D0 (en) Semiconductor device and manufacturing method therefor
EP0442493A3 (en) A semiconductor device and a method for fabricating the same
KR950001757B1 (en) Semiconductor device and manufacturing method thereof
EP0530051A3 (en) A semiconductor device and a method for producing the same
KR970009979B1 (en) Method of manufacturing a semiconductor device and device thereby
KR970009171B1 (en) Semiconductor device and a method for manufacturing thereof
GB2262657B (en) Semiconductor memory device and a manufacturing method therefor
KR960008866B1 (en) Semiconductor device and manufacturing method thereof
GB9521179D0 (en) Semiconductor device and a manufacturing method therefor

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100826