GB9124626D0 - Method for manufacturing a semiconductor device - Google Patents
Method for manufacturing a semiconductor deviceInfo
- Publication number
- GB9124626D0 GB9124626D0 GB919124626A GB9124626A GB9124626D0 GB 9124626 D0 GB9124626 D0 GB 9124626D0 GB 919124626 A GB919124626 A GB 919124626A GB 9124626 A GB9124626 A GB 9124626A GB 9124626 D0 GB9124626 D0 GB 9124626D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910009682A KR930001428A (en) | 1991-06-12 | 1991-06-12 | Manufacturing Method of Semiconductor Device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB9124626D0 true GB9124626D0 (en) | 1992-01-08 |
GB2256747A GB2256747A (en) | 1992-12-16 |
Family
ID=19315689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9124626A Withdrawn GB2256747A (en) | 1991-06-12 | 1991-11-20 | Method for manufacturing semiconductor device capacitor |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH04369264A (en) |
KR (1) | KR930001428A (en) |
DE (1) | DE4136303A1 (en) |
FR (1) | FR2677810A1 (en) |
GB (1) | GB2256747A (en) |
IT (1) | IT1252285B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5818071A (en) * | 1995-02-02 | 1998-10-06 | Dow Corning Corporation | Silicon carbide metal diffusion barrier layer |
KR100360413B1 (en) | 2000-12-19 | 2002-11-13 | 삼성전자 주식회사 | Method of manufacturing capacitor of semiconductor memory device by two-step thermal treatment |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5978553A (en) * | 1982-10-27 | 1984-05-07 | Hitachi Ltd | Capacitor and manufacture thereof |
JPS60242678A (en) * | 1984-05-17 | 1985-12-02 | Seiko Epson Corp | Semiconductor memory device |
JPS6347983A (en) * | 1986-08-18 | 1988-02-29 | Sharp Corp | Silicon carbide field effect transistor |
-
1991
- 1991-06-12 KR KR1019910009682A patent/KR930001428A/en not_active Application Discontinuation
- 1991-11-04 DE DE4136303A patent/DE4136303A1/en not_active Ceased
- 1991-11-13 JP JP3297138A patent/JPH04369264A/en active Pending
- 1991-11-13 FR FR9113932A patent/FR2677810A1/en not_active Withdrawn
- 1991-11-20 IT ITMI913097A patent/IT1252285B/en active IP Right Grant
- 1991-11-20 GB GB9124626A patent/GB2256747A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR930001428A (en) | 1993-01-16 |
DE4136303A1 (en) | 1992-12-17 |
IT1252285B (en) | 1995-06-08 |
ITMI913097A0 (en) | 1991-11-20 |
GB2256747A (en) | 1992-12-16 |
ITMI913097A1 (en) | 1993-05-20 |
JPH04369264A (en) | 1992-12-22 |
FR2677810A1 (en) | 1992-12-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |