IT1252285B - METHOD FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE - Google Patents

METHOD FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE

Info

Publication number
IT1252285B
IT1252285B ITMI913097A ITMI913097A IT1252285B IT 1252285 B IT1252285 B IT 1252285B IT MI913097 A ITMI913097 A IT MI913097A IT MI913097 A ITMI913097 A IT MI913097A IT 1252285 B IT1252285 B IT 1252285B
Authority
IT
Italy
Prior art keywords
semiconductor device
manufacture
layer
capacitor
electrode
Prior art date
Application number
ITMI913097A
Other languages
Italian (it)
Inventor
Geun-Ha Jang
Ang-Goo Lee
Yu-Chan Jin
Tae-Gyu Jang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI913097A0 publication Critical patent/ITMI913097A0/en
Publication of ITMI913097A1 publication Critical patent/ITMI913097A1/en
Application granted granted Critical
Publication of IT1252285B publication Critical patent/IT1252285B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen

Abstract

Un metodo di fabbricazione di un dispositivo a semiconduttore comprende gli stadi di formazione di uno strato di carburo di silicio di tipo ? (12) su un primo strato conduttivo (10), impiegato come primo elettrodo di un condensatore, e formazione di un secondo strato conduttivo (20), impiegato come secondo elettrodo del condensatore su uno strato di carburo di silicio di tipo ? (12). Il metodo può aumentare la capacità.Does a method of manufacturing a semiconductor device include the stages of formation of a silicon carbide layer of the type? (12) on a first conductive layer (10), used as the first electrode of a capacitor, and formation of a second conductive layer (20), used as the second electrode of the capacitor on a silicon carbide type layer? (12). The method can increase capacity.

ITMI913097A 1991-06-12 1991-11-20 METHOD FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE IT1252285B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910009682A KR930001428A (en) 1991-06-12 1991-06-12 Manufacturing Method of Semiconductor Device

Publications (3)

Publication Number Publication Date
ITMI913097A0 ITMI913097A0 (en) 1991-11-20
ITMI913097A1 ITMI913097A1 (en) 1993-05-20
IT1252285B true IT1252285B (en) 1995-06-08

Family

ID=19315689

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI913097A IT1252285B (en) 1991-06-12 1991-11-20 METHOD FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE

Country Status (6)

Country Link
JP (1) JPH04369264A (en)
KR (1) KR930001428A (en)
DE (1) DE4136303A1 (en)
FR (1) FR2677810A1 (en)
GB (1) GB2256747A (en)
IT (1) IT1252285B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818071A (en) * 1995-02-02 1998-10-06 Dow Corning Corporation Silicon carbide metal diffusion barrier layer
KR100360413B1 (en) 2000-12-19 2002-11-13 삼성전자 주식회사 Method of manufacturing capacitor of semiconductor memory device by two-step thermal treatment

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5978553A (en) * 1982-10-27 1984-05-07 Hitachi Ltd Capacitor and manufacture thereof
JPS60242678A (en) * 1984-05-17 1985-12-02 Seiko Epson Corp Semiconductor memory device
JPS6347983A (en) * 1986-08-18 1988-02-29 Sharp Corp Silicon carbide field effect transistor

Also Published As

Publication number Publication date
KR930001428A (en) 1993-01-16
DE4136303A1 (en) 1992-12-17
ITMI913097A0 (en) 1991-11-20
GB2256747A (en) 1992-12-16
GB9124626D0 (en) 1992-01-08
ITMI913097A1 (en) 1993-05-20
JPH04369264A (en) 1992-12-22
FR2677810A1 (en) 1992-12-18

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