KR930001428A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

Info

Publication number
KR930001428A
KR930001428A KR1019910009682A KR910009682A KR930001428A KR 930001428 A KR930001428 A KR 930001428A KR 1019910009682 A KR1019910009682 A KR 1019910009682A KR 910009682 A KR910009682 A KR 910009682A KR 930001428 A KR930001428 A KR 930001428A
Authority
KR
South Korea
Prior art keywords
semiconductor device
manufacturing
silicon carbide
carbide layer
alpha
Prior art date
Application number
KR1019910009682A
Other languages
Korean (ko)
Inventor
장근하
이앙구
진유찬
장태규
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910009682A priority Critical patent/KR930001428A/en
Priority to DE4136303A priority patent/DE4136303A1/en
Priority to JP3297138A priority patent/JPH04369264A/en
Priority to FR9113932A priority patent/FR2677810A1/en
Priority to GB9124626A priority patent/GB2256747A/en
Priority to ITMI913097A priority patent/IT1252285B/en
Publication of KR930001428A publication Critical patent/KR930001428A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음No content

Description

반도체 장치의 제조방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 O SIC(α)구조의 유전체막을 채택한 커패시터를 나타낸 다년도, 제2도는 본 발명에 따른 OSIC(α)SICxOy 구조의 유전체막을 채택한 커패시터를 나타낸 단면도.1 is a multi-year showing a capacitor employing a dielectric film of the O SIC (α) structure according to the present invention, Figure 2 is a cross-sectional view showing a capacitor employing a dielectric film of the OSIC (α) SICxOy structure according to the present invention.

Claims (4)

커패시터의 제1전극으로 사용되는 제1도전층위에 알파형 탄화규소층을 형성하는 공정과 상기 알파형 탄화규소층위에 커패시터의 제2전극으로 사용되는 제2도 전층을 형성하는 공정으로 이루어지는 것을 특징으로 하는 반도체장치의 제조방법.Forming an alpha-type silicon carbide layer on the first conductive layer used as the first electrode of the capacitor, and forming a second conductive layer used as the second electrode of the capacitor on the alpha-type silicon carbide layer. A semiconductor device manufacturing method. 제1항에 있어서, 상기 알파형 탄화규소층위에 이 탄화규소층을 강제산화시켜 강제산화된 탄화규소층을 형성하는 공정을 더 포함하는 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, further comprising a step of forcibly oxidizing the silicon carbide layer on the alpha-type silicon carbide layer to form a forcibly oxidized silicon carbide layer. 제1항 혹은 제2항의 어느 한 항에 있어서, 상기 알파형 탄화 규소층은 4염화규소와 매탄을 반응시켜서 얻어지는 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the alpha-type silicon carbide layer is obtained by reacting silicon tetrachloride and methane. 제1항 혹은 제2항의 어느 한 항에 있어서, 상기 제2도전층은 인 사이튜 도우프된 다결정실리콘층으로 이루어지는 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the second conductive layer is formed of an in-doped polycrystalline silicon layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910009682A 1991-06-12 1991-06-12 Manufacturing Method of Semiconductor Device KR930001428A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019910009682A KR930001428A (en) 1991-06-12 1991-06-12 Manufacturing Method of Semiconductor Device
DE4136303A DE4136303A1 (en) 1991-06-12 1991-11-04 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
JP3297138A JPH04369264A (en) 1991-06-12 1991-11-13 Manufacture of semiconductor device
FR9113932A FR2677810A1 (en) 1991-06-12 1991-11-13 Method of fabricating a device with semiconductors
GB9124626A GB2256747A (en) 1991-06-12 1991-11-20 Method for manufacturing semiconductor device capacitor
ITMI913097A IT1252285B (en) 1991-06-12 1991-11-20 METHOD FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910009682A KR930001428A (en) 1991-06-12 1991-06-12 Manufacturing Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR930001428A true KR930001428A (en) 1993-01-16

Family

ID=19315689

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910009682A KR930001428A (en) 1991-06-12 1991-06-12 Manufacturing Method of Semiconductor Device

Country Status (6)

Country Link
JP (1) JPH04369264A (en)
KR (1) KR930001428A (en)
DE (1) DE4136303A1 (en)
FR (1) FR2677810A1 (en)
GB (1) GB2256747A (en)
IT (1) IT1252285B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100402187B1 (en) * 1995-02-02 2004-02-11 다우 코닝 코포레이션 An integrated circuit and a wiring board including a silicon carbide metal diffusion barrier layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100360413B1 (en) * 2000-12-19 2002-11-13 삼성전자 주식회사 Method of manufacturing capacitor of semiconductor memory device by two-step thermal treatment

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5978553A (en) * 1982-10-27 1984-05-07 Hitachi Ltd Capacitor and manufacture thereof
JPS60242678A (en) * 1984-05-17 1985-12-02 Seiko Epson Corp Semiconductor memory device
JPS6347983A (en) * 1986-08-18 1988-02-29 Sharp Corp Silicon carbide field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100402187B1 (en) * 1995-02-02 2004-02-11 다우 코닝 코포레이션 An integrated circuit and a wiring board including a silicon carbide metal diffusion barrier layer

Also Published As

Publication number Publication date
ITMI913097A0 (en) 1991-11-20
ITMI913097A1 (en) 1993-05-20
FR2677810A1 (en) 1992-12-18
JPH04369264A (en) 1992-12-22
IT1252285B (en) 1995-06-08
GB2256747A (en) 1992-12-16
GB9124626D0 (en) 1992-01-08
DE4136303A1 (en) 1992-12-17

Similar Documents

Publication Publication Date Title
KR900002316A (en) Manufacturing Method of Semiconductor Device
KR880011887A (en) Semiconductor Device of Multilayer Silicon Oxide Nitride Dielectric and Manufacturing Method Thereof
KR910013507A (en) Manufacturing Method of Semiconductor Device
KR900005463A (en) Semiconductor Memory and Manufacturing Method
KR930001428A (en) Manufacturing Method of Semiconductor Device
KR960027004A (en) Side contact formation method of semiconductor device
KR910013565A (en) Lateral semiconductor device
KR910008853A (en) Semiconductor device and manufacturing method
KR920015483A (en) Manufacturing method of insulating film
KR830006828A (en) Semiconductor devices
KR970052800A (en) Gate insulating film formation method
KR930003290A (en) Metal contact formation method and structure
KR900017143A (en) Bi-SMOS semiconductor device manufacturing method
KR920013629A (en) Semiconductor device
KR920022576A (en) Manufacturing method of high temperature superconducting thin film
KR900004030A (en) Method of manufacturing buried layer of bipolar transistor
KR920022514A (en) How to manufacture capacitor in DRAM cell
KR900002432A (en) Method of forming side wall of semiconductor
KR920001678A (en) Manufacturing method of aluminum oxide film formation of metal wiring
KR920017234A (en) Method for manufacturing charge storage electrode with increased surface area
KR930014893A (en) TFT insulating film manufacturing method having two-stage current voltage characteristics
KR900007076A (en) Separation layer formation method of bipla device
KR900000998A (en) High voltage semiconductor device and manufacturing method thereof
KR900002469A (en) BCCD manufacturing method
KR890001171A (en) Polyside Structure of Semiconductor Device

Legal Events

Date Code Title Description
A201 Request for examination
WITB Written withdrawal of application