GB9100619D0 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB9100619D0
GB9100619D0 GB919100619A GB9100619A GB9100619D0 GB 9100619 D0 GB9100619 D0 GB 9100619D0 GB 919100619 A GB919100619 A GB 919100619A GB 9100619 A GB9100619 A GB 9100619A GB 9100619 D0 GB9100619 D0 GB 9100619D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB919100619A
Other versions
GB2247779A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9100619D0 publication Critical patent/GB9100619D0/en
Publication of GB2247779A publication Critical patent/GB2247779A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
GB9100619A 1990-09-05 1991-01-11 Semiconductor device tolerant of electrostatic discharge Withdrawn GB2247779A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900014002A KR920007171A (en) 1990-09-05 1990-09-05 High Reliability Semiconductor Device

Publications (2)

Publication Number Publication Date
GB9100619D0 true GB9100619D0 (en) 1991-02-27
GB2247779A GB2247779A (en) 1992-03-11

Family

ID=19303260

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9100619A Withdrawn GB2247779A (en) 1990-09-05 1991-01-11 Semiconductor device tolerant of electrostatic discharge

Country Status (6)

Country Link
JP (1) JPH04234162A (en)
KR (1) KR920007171A (en)
DE (1) DE4101274A1 (en)
FR (1) FR2666454A1 (en)
GB (1) GB2247779A (en)
IT (1) IT1245794B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3456242B2 (en) * 1993-01-07 2003-10-14 セイコーエプソン株式会社 Semiconductor device and manufacturing method thereof
DE69429018T2 (en) * 1993-01-12 2002-06-13 Sony Corp Output circuit for charge transfer element
KR0166101B1 (en) * 1993-10-21 1999-01-15 김주용 A transistor for esd protection circuit and its fabricating method
FR2713398B1 (en) * 1993-11-30 1996-01-19 Sgs Thomson Microelectronics Fuse for integrated circuit.
US5932917A (en) * 1996-04-19 1999-08-03 Nippon Steel Corporation Input protective circuit having a diffusion resistance layer
JPH1070266A (en) * 1996-08-26 1998-03-10 Nec Corp Semiconductor device and fabrication thereof
DE19840239A1 (en) * 1998-09-03 2000-03-09 Siemens Ag Electrostatic discharge damage protected power semiconductor device, especially IGBT, MOSFET or diode, comprising an ohmic contact metallization of high melting metal
DE102004012819B4 (en) 2004-03-16 2006-02-23 Infineon Technologies Ag Power semiconductor component with increased robustness

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1073560A (en) * 1964-12-28 1967-06-28 Gen Electric Improvements in semiconductor devices
DE1803392A1 (en) * 1968-10-16 1970-06-18 Siemens Ag Protection device for a field effect transistor
JPS57211272A (en) * 1981-06-23 1982-12-25 Toshiba Corp Semiconductor device
JPS5825264A (en) * 1981-08-07 1983-02-15 Hitachi Ltd Insulated gate type semiconductor device and manufacture thereof
DE3586268T2 (en) * 1984-05-03 1993-02-25 Digital Equipment Corp INPUT PROTECTIVE ARRANGEMENT FOR VLSI CIRCUIT ARRANGEMENTS.
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs

Also Published As

Publication number Publication date
ITMI910091A0 (en) 1991-01-16
FR2666454A1 (en) 1992-03-06
ITMI910091A1 (en) 1992-07-16
IT1245794B (en) 1994-10-18
KR920007171A (en) 1992-04-28
JPH04234162A (en) 1992-08-21
GB2247779A (en) 1992-03-11
DE4101274A1 (en) 1992-03-19

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)