FR2935536B1 - Procede de detourage progressif - Google Patents

Procede de detourage progressif

Info

Publication number
FR2935536B1
FR2935536B1 FR0855875A FR0855875A FR2935536B1 FR 2935536 B1 FR2935536 B1 FR 2935536B1 FR 0855875 A FR0855875 A FR 0855875A FR 0855875 A FR0855875 A FR 0855875A FR 2935536 B1 FR2935536 B1 FR 2935536B1
Authority
FR
France
Prior art keywords
progressive
detouring method
detouring
progressive detouring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0855875A
Other languages
English (en)
Other versions
FR2935536A1 (fr
Inventor
Marcel Broekaart
Marion Migette
Sebastien Molinari
Eric Neyret
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0855875A priority Critical patent/FR2935536B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to KR1020107022381A priority patent/KR101160316B1/ko
Priority to EP09811094.3A priority patent/EP2324491B1/fr
Priority to CN200980115233.3A priority patent/CN102017092B/zh
Priority to US12/934,026 priority patent/US8679944B2/en
Priority to PCT/EP2009/059961 priority patent/WO2010026007A1/fr
Priority to JP2011511037A priority patent/JP5319764B2/ja
Priority to TW098128553A priority patent/TWI443730B/zh
Publication of FR2935536A1 publication Critical patent/FR2935536A1/fr
Application granted granted Critical
Publication of FR2935536B1 publication Critical patent/FR2935536B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR0855875A 2008-09-02 2008-09-02 Procede de detourage progressif Active FR2935536B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0855875A FR2935536B1 (fr) 2008-09-02 2008-09-02 Procede de detourage progressif
EP09811094.3A EP2324491B1 (fr) 2008-09-02 2009-07-31 Procédé de finition progressive
CN200980115233.3A CN102017092B (zh) 2008-09-02 2009-07-31 顺序冲切方法
US12/934,026 US8679944B2 (en) 2008-09-02 2009-07-31 Progressive trimming method
KR1020107022381A KR101160316B1 (ko) 2008-09-02 2009-07-31 점진적인 트리밍 방법
PCT/EP2009/059961 WO2010026007A1 (fr) 2008-09-02 2009-07-31 Procédé de finition progressive
JP2011511037A JP5319764B2 (ja) 2008-09-02 2009-07-31 漸進トリミング法
TW098128553A TWI443730B (zh) 2008-09-02 2009-08-25 一漸近式修整方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0855875A FR2935536B1 (fr) 2008-09-02 2008-09-02 Procede de detourage progressif

Publications (2)

Publication Number Publication Date
FR2935536A1 FR2935536A1 (fr) 2010-03-05
FR2935536B1 true FR2935536B1 (fr) 2010-09-24

Family

ID=40409956

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0855875A Active FR2935536B1 (fr) 2008-09-02 2008-09-02 Procede de detourage progressif

Country Status (8)

Country Link
US (1) US8679944B2 (fr)
EP (1) EP2324491B1 (fr)
JP (1) JP5319764B2 (fr)
KR (1) KR101160316B1 (fr)
CN (1) CN102017092B (fr)
FR (1) FR2935536B1 (fr)
TW (1) TWI443730B (fr)
WO (1) WO2010026007A1 (fr)

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FR2957190B1 (fr) * 2010-03-02 2012-04-27 Soitec Silicon On Insulator Procede de realisation d'une structure multicouche avec detourage par effets thermomecaniques.
FR2961630B1 (fr) 2010-06-22 2013-03-29 Soitec Silicon On Insulator Technologies Appareil de fabrication de dispositifs semi-conducteurs
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US8338266B2 (en) 2010-08-11 2012-12-25 Soitec Method for molecular adhesion bonding at low pressure
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FR3036223B1 (fr) * 2015-05-11 2018-05-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de collage direct de substrats avec amincissement des bords d'au moins un des deux substrats
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EP3345209A4 (fr) * 2015-09-04 2018-11-14 Nanyang Technological University Procédé d'encapsulation de substrat
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JP6890495B2 (ja) * 2017-07-26 2021-06-18 株式会社ディスコ ウェーハの加工方法
CN109786234B (zh) * 2017-11-13 2021-06-04 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
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JP7258489B2 (ja) * 2018-08-21 2023-04-17 株式会社岡本工作機械製作所 半導体装置の製造方法及び製造装置
CN110943066A (zh) * 2018-09-21 2020-03-31 联华电子股份有限公司 具有高电阻晶片的半导体结构及高电阻晶片的接合方法
JP7237557B2 (ja) * 2018-12-14 2023-03-13 株式会社東京精密 貼り合わせウェーハのエッジトリミング加工方法
CN110189985B (zh) 2019-06-19 2020-10-30 武汉新芯集成电路制造有限公司 一种键合结构及其制造方法
CN110459555A (zh) * 2019-08-29 2019-11-15 长春长光圆辰微电子技术有限公司 背照式图像传感器晶圆边缘无硅膜缺陷的工艺制程方法
CN110854011A (zh) * 2019-09-30 2020-02-28 芯盟科技有限公司 堆叠键合晶圆的处理方法
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TWI443730B (zh) 2014-07-01
FR2935536A1 (fr) 2010-03-05
WO2010026007A1 (fr) 2010-03-11
JP2011524083A (ja) 2011-08-25
CN102017092A (zh) 2011-04-13
KR101160316B1 (ko) 2012-06-26
CN102017092B (zh) 2012-10-03
EP2324491A1 (fr) 2011-05-25
US8679944B2 (en) 2014-03-25
JP5319764B2 (ja) 2013-10-16
US20110097874A1 (en) 2011-04-28
KR20100130619A (ko) 2010-12-13
EP2324491B1 (fr) 2013-06-05

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