DE69907537D1 - Hybrid-Halbleitermodul aus vergossenem Kunstharz und Verfahren zuseiner Herstellung - Google Patents

Hybrid-Halbleitermodul aus vergossenem Kunstharz und Verfahren zuseiner Herstellung

Info

Publication number
DE69907537D1
DE69907537D1 DE69907537T DE69907537T DE69907537D1 DE 69907537 D1 DE69907537 D1 DE 69907537D1 DE 69907537 T DE69907537 T DE 69907537T DE 69907537 T DE69907537 T DE 69907537T DE 69907537 D1 DE69907537 D1 DE 69907537D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor module
molded resin
module made
hybrid semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69907537T
Other languages
English (en)
Other versions
DE69907537T2 (de
Inventor
Toshio Ogawa
Masaaki Takahashi
Masahiro Gouda
Noritaka Kamimura
Kazuhiro Suzuki
Junichi Saeki
Kazuji Yamada
Makoto Ishii
Akihiro Tamba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69907537D1 publication Critical patent/DE69907537D1/de
Publication of DE69907537T2 publication Critical patent/DE69907537T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165Containers
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334Auxiliary members in encapsulations
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/181Encapsulation
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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
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    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
DE1999607537 1998-02-12 1999-02-11 Hybrid-Halbleitermodul aus vergossenem Kunstharz und Verfahren zuseiner Herstellung Expired - Fee Related DE69907537T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2949198A JPH11233712A (ja) 1998-02-12 1998-02-12 半導体装置及びその製法とそれを使った電気機器
JP2949198 1998-02-12

Publications (2)

Publication Number Publication Date
DE69907537D1 true DE69907537D1 (de) 2003-06-12
DE69907537T2 DE69907537T2 (de) 2004-04-01

Family

ID=12277552

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1999607537 Expired - Fee Related DE69907537T2 (de) 1998-02-12 1999-02-11 Hybrid-Halbleitermodul aus vergossenem Kunstharz und Verfahren zuseiner Herstellung

Country Status (5)

Country Link
US (1) US6291880B1 (de)
EP (1) EP0936671B1 (de)
JP (1) JPH11233712A (de)
KR (1) KR19990072605A (de)
DE (1) DE69907537T2 (de)

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