DE60316171D1 - Automatischer abnutzungsausgleich in einem nicht-flüchtigen speichersystem - Google Patents

Automatischer abnutzungsausgleich in einem nicht-flüchtigen speichersystem

Info

Publication number
DE60316171D1
DE60316171D1 DE60316171T DE60316171T DE60316171D1 DE 60316171 D1 DE60316171 D1 DE 60316171D1 DE 60316171 T DE60316171 T DE 60316171T DE 60316171 T DE60316171 T DE 60316171T DE 60316171 D1 DE60316171 D1 DE 60316171D1
Authority
DE
Germany
Prior art keywords
memory element
contents
storage system
volatile storage
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60316171T
Other languages
English (en)
Other versions
DE60316171T2 (de
Inventor
Carlos J Gonzalez
Kevin M Conley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32230329&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60316171(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60316171D1 publication Critical patent/DE60316171D1/de
Publication of DE60316171T2 publication Critical patent/DE60316171T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G11C16/3495—Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
    • G06F2212/1036—Life time enhancement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7211—Wear leveling
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Ventilation (AREA)
  • Safety Devices In Control Systems (AREA)
  • Automatic Assembly (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
DE60316171T 2002-10-28 2003-10-09 Automatischer abnutzungsausgleich in einem nicht-flüchtigen speichersystem Expired - Lifetime DE60316171T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42217302P 2002-10-28 2002-10-28
US422173P 2002-10-28
PCT/US2003/032050 WO2004040586A1 (en) 2002-10-28 2003-10-09 Automated wear leveling in non-volatile storage systems

Publications (2)

Publication Number Publication Date
DE60316171D1 true DE60316171D1 (de) 2007-10-18
DE60316171T2 DE60316171T2 (de) 2008-05-29

Family

ID=32230329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60316171T Expired - Lifetime DE60316171T2 (de) 2002-10-28 2003-10-09 Automatischer abnutzungsausgleich in einem nicht-flüchtigen speichersystem

Country Status (9)

Country Link
US (2) US7120729B2 (de)
EP (1) EP1556868B1 (de)
JP (1) JP4518951B2 (de)
KR (2) KR101122511B1 (de)
CN (1) CN100483552C (de)
AT (1) ATE372578T1 (de)
AU (1) AU2003282544A1 (de)
DE (1) DE60316171T2 (de)
WO (1) WO2004040586A1 (de)

Families Citing this family (267)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8171203B2 (en) * 1995-07-31 2012-05-01 Micron Technology, Inc. Faster write operations to nonvolatile memory using FSInfo sector manipulation
US6901498B2 (en) * 2002-12-09 2005-05-31 Sandisk Corporation Zone boundary adjustment for defects in non-volatile memories
TWI243303B (en) * 2003-11-14 2005-11-11 Hon Hai Prec Ind Co Ltd System and method for managing flash file stored in a flash memory
JP4347707B2 (ja) * 2004-01-09 2009-10-21 パナソニック株式会社 情報記録媒体のフォーマット方法および情報記録媒体
JP2006024024A (ja) * 2004-07-08 2006-01-26 Toshiba Corp 論理ディスク管理方法及び装置
JP4561246B2 (ja) * 2004-08-31 2010-10-13 ソニー株式会社 メモリ装置
US7590918B2 (en) * 2004-09-10 2009-09-15 Ovonyx, Inc. Using a phase change memory as a high volume memory
US7509526B2 (en) * 2004-09-24 2009-03-24 Seiko Epson Corporation Method of correcting NAND memory blocks and to a printing device employing the method
US7441067B2 (en) * 2004-11-15 2008-10-21 Sandisk Corporation Cyclic flash memory wear leveling
US7412560B2 (en) * 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating
US7386655B2 (en) 2004-12-16 2008-06-10 Sandisk Corporation Non-volatile memory and method with improved indexing for scratch pad and update blocks
US7366826B2 (en) * 2004-12-16 2008-04-29 Sandisk Corporation Non-volatile memory and method with multi-stream update tracking
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7315917B2 (en) 2005-01-20 2008-01-01 Sandisk Corporation Scheduling of housekeeping operations in flash memory systems
JP4665539B2 (ja) * 2005-01-31 2011-04-06 ソニー株式会社 メモリ制御装置、メモリ制御方法、プログラム
US8108691B2 (en) 2005-02-07 2012-01-31 Sandisk Technologies Inc. Methods used in a secure memory card with life cycle phases
US8321686B2 (en) 2005-02-07 2012-11-27 Sandisk Technologies Inc. Secure memory card with life cycle phases
US8423788B2 (en) 2005-02-07 2013-04-16 Sandisk Technologies Inc. Secure memory card with life cycle phases
US20060236025A1 (en) * 2005-04-18 2006-10-19 Intel Corporation Method and apparatus to control number of erasures of nonvolatile memory
US7685360B1 (en) 2005-05-05 2010-03-23 Seagate Technology Llc Methods and structure for dynamic appended metadata in a dynamically mapped mass storage device
US7916421B1 (en) * 2005-05-05 2011-03-29 Seagate Technology Llc Methods and structure for recovery of write fault errors in a dynamically mapped mass storage device
US7748031B2 (en) 2005-07-08 2010-06-29 Sandisk Corporation Mass storage device with automated credentials loading
WO2007013372A1 (ja) 2005-07-29 2007-02-01 Matsushita Electric Industrial Co., Ltd. メモリコントローラ、不揮発性記憶装置、不揮発性記憶システム及び不揮発性メモリのアドレス管理方法
US7680980B2 (en) * 2005-08-12 2010-03-16 Kabushiki Kaisha Toshiba Image forming apparatus
KR101014179B1 (ko) * 2005-09-14 2011-02-14 디스크레틱스 테크놀로지스 엘티디. 플래시 대용량 저장 메모리를 가진 보안 장치를 위한 보안 및 적응형 시스템 구조
US7536540B2 (en) * 2005-09-14 2009-05-19 Sandisk Corporation Method of hardware driver integrity check of memory card controller firmware
US7934049B2 (en) 2005-09-14 2011-04-26 Sandisk Corporation Methods used in a secure yet flexible system architecture for secure devices with flash mass storage memory
US8291295B2 (en) 2005-09-26 2012-10-16 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
US7631245B2 (en) 2005-09-26 2009-12-08 Sandisk Il Ltd. NAND flash memory controller exporting a NAND interface
KR100848315B1 (ko) * 2005-12-08 2008-07-24 한국전자통신연구원 이중 저널링을 이용한 데이터 저장 공간 확보 방법
JP2007164318A (ja) * 2005-12-12 2007-06-28 Renesas Technology Corp 記憶装置
US20070150644A1 (en) * 2005-12-28 2007-06-28 Yosi Pinto System for writing non-volatile memories for increased endurance
US7245556B1 (en) * 2005-12-28 2007-07-17 Sandisk Corporation Methods for writing non-volatile memories for increased endurance
US7599261B2 (en) * 2006-01-18 2009-10-06 International Business Machines Corporation Removable storage media with improved data integrity
US20070174549A1 (en) * 2006-01-24 2007-07-26 Yevgen Gyl Method for utilizing a memory interface to control partitioning of a memory module
US8756399B2 (en) * 2006-01-25 2014-06-17 Seagate Technology Llc Mutable association of a set of logical block addresses to a band of physical storage blocks
US20070208904A1 (en) * 2006-03-03 2007-09-06 Wu-Han Hsieh Wear leveling method and apparatus for nonvolatile memory
US8296497B2 (en) * 2006-03-14 2012-10-23 Stmicroelectronics Pvt. Ltd. Self-updating memory controller
US20070255889A1 (en) * 2006-03-22 2007-11-01 Yoav Yogev Non-volatile memory device and method of operating the device
JP4863749B2 (ja) * 2006-03-29 2012-01-25 株式会社日立製作所 フラッシュメモリを用いた記憶装置、その消去回数平準化方法、及び消去回数平準化プログラム
KR101185617B1 (ko) 2006-04-04 2012-09-24 삼성전자주식회사 외부 메모리의 부하를 줄일 수 있는 웨어 레벨링 기법에의한 플래시 파일 시스템의 동작 방법
US7451264B2 (en) * 2006-04-13 2008-11-11 Sandisk Corporation Cycle count storage methods
US7467253B2 (en) * 2006-04-13 2008-12-16 Sandisk Corporation Cycle count storage systems
FR2901035B1 (fr) * 2006-05-11 2008-07-11 St Microelectronics Sa Procede et dispositif de gestion d'une table de correspondance d'acces a une memoire
JP4804218B2 (ja) * 2006-05-11 2011-11-02 株式会社日立製作所 記憶媒体への書き込み回数を管理する計算機システム及びその制御方法
US7778077B2 (en) * 2006-05-15 2010-08-17 Sandisk Corporation Non-volatile memory system with end of life calculation
US7523013B2 (en) * 2006-05-15 2009-04-21 Sandisk Corporation Methods of end of life calculation for non-volatile memories
EP2024839B1 (de) 2006-05-15 2014-07-02 SanDisk Technologies Inc. Nichtflüchtiges speichersystem mit lebensdauerberechnung
US7349254B2 (en) * 2006-05-31 2008-03-25 Qimonda Flash Gmbh & Co. Kg Charge-trapping memory device and methods for its manufacturing and operation
US20080046630A1 (en) * 2006-08-21 2008-02-21 Sandisk Il Ltd. NAND flash memory controller exporting a logical sector-based interface
US20080046641A1 (en) * 2006-08-21 2008-02-21 Sandisk Il Ltd. NAND flash memory controller exporting a logical sector-based interface
US20080072058A1 (en) * 2006-08-24 2008-03-20 Yoram Cedar Methods in a reader for one time password generating device
US20080052524A1 (en) * 2006-08-24 2008-02-28 Yoram Cedar Reader for one time password generating device
US20080091901A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Method for non-volatile memory with worst-case control data management
US20080091871A1 (en) * 2006-10-12 2008-04-17 Alan David Bennett Non-volatile memory with worst-case control data management
US20080126685A1 (en) * 2006-11-24 2008-05-29 Radoslav Danilak System, method, and computer program product for reducing memory write operations using an instruction set
US7904764B2 (en) * 2006-11-24 2011-03-08 Sandforce, Inc. Memory lifetime gauging system, method and computer program product
US7747813B2 (en) * 2006-11-24 2010-06-29 Sandforce, Inc. Multi-memory device system and method for managing a lifetime thereof
US7809900B2 (en) * 2006-11-24 2010-10-05 Sandforce, Inc. System, method, and computer program product for delaying an operation that reduces a lifetime of memory
US7904619B2 (en) * 2006-11-24 2011-03-08 Sandforce, Inc. System, method, and computer program product for reducing memory write operations using difference information
US7904672B2 (en) * 2006-12-08 2011-03-08 Sandforce, Inc. System and method for providing data redundancy after reducing memory writes
US8090980B2 (en) * 2006-12-08 2012-01-03 Sandforce, Inc. System, method, and computer program product for providing data redundancy in a plurality of storage devices
US9153337B2 (en) * 2006-12-11 2015-10-06 Marvell World Trade Ltd. Fatigue management system and method for hybrid nonvolatile solid state memory system
KR100881669B1 (ko) * 2006-12-18 2009-02-06 삼성전자주식회사 비휘발성 데이터 저장장치의 정적 데이터 영역 검출 방법,마모도 평준화 방법 및 데이터 유닛 병합 방법과 그 장치
US7710777B1 (en) 2006-12-20 2010-05-04 Marvell International Ltd. Semi-volatile NAND flash memory
DE112006004187B4 (de) * 2006-12-27 2015-09-10 Intel Corporation Verfahren, nicht-flüchtige Speichervorrichtung und Computersystem zum initiativen Abnutzungsausgleich für einen nicht-flüchtigen Speicher
TW200828320A (en) * 2006-12-28 2008-07-01 Genesys Logic Inc Method for performing static wear leveling on flash memory
US8423794B2 (en) 2006-12-28 2013-04-16 Sandisk Technologies Inc. Method and apparatus for upgrading a memory card that has security mechanisms for preventing copying of secure content and applications
CN100504814C (zh) * 2007-01-17 2009-06-24 忆正存储技术(深圳)有限公司 闪存的区块管理方法
KR20080072201A (ko) * 2007-02-01 2008-08-06 삼성전자주식회사 메모리 포맷이 가능한 디지털 전자기기, 메모리 포맷 방법,그리고, 저장기능을 가지는 디지털 전자기기 및 저장방법
KR100882740B1 (ko) * 2007-02-22 2009-02-09 삼성전자주식회사 맵 히스토리 기반의 불휘발성 메모리의 매핑 방법 및 저장장치
US7731365B2 (en) * 2007-03-19 2010-06-08 Johnson&Johnson Vision Care, Inc. Method of fitting contact lenses
US7689762B2 (en) 2007-05-03 2010-03-30 Atmel Corporation Storage device wear leveling
US20080294813A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Managing Housekeeping Operations in Flash Memory
US20080294814A1 (en) * 2007-05-24 2008-11-27 Sergey Anatolievich Gorobets Flash Memory System with Management of Housekeeping Operations
JP4444314B2 (ja) 2007-07-13 2010-03-31 株式会社東芝 半導体メモリ情報蓄積装置とその書き込み制御方法
KR100857761B1 (ko) * 2007-06-14 2008-09-10 삼성전자주식회사 웨어 레벨링을 수행하는 메모리 시스템 및 그것의 쓰기방법
CN100538662C (zh) * 2007-07-05 2009-09-09 炬力集成电路设计有限公司 一种基于局部采样的存储器的磨损平衡方法
JP5039463B2 (ja) * 2007-07-12 2012-10-03 株式会社日立製作所 記録装置および記録方法
KR101447188B1 (ko) * 2007-07-31 2014-10-08 삼성전자주식회사 플래시 메모리에 최적화된 입출력 제어 방법 및 장치
TWI373772B (en) * 2007-10-04 2012-10-01 Phison Electronics Corp Wear leveling method and controller using the same
CN101409108B (zh) * 2007-10-09 2011-04-13 群联电子股份有限公司 平均磨损方法及使用此方法的控制器
US20090106522A1 (en) * 2007-10-18 2009-04-23 Sony Corporation Electronic system with dynamic selection of multiple computing device
CN101419834B (zh) * 2007-10-22 2011-03-30 群联电子股份有限公司 平均磨损方法及使用此方法的控制器
US8296498B2 (en) * 2007-11-13 2012-10-23 Sandisk Technologies Inc. Method and system for virtual fast access non-volatile RAM
CA2706099C (en) * 2007-11-19 2014-08-26 Nexxus Lighting, Inc. Apparatus for housing a light assembly
WO2009067556A2 (en) * 2007-11-19 2009-05-28 Nexxus Lighting, Inc. Apparatus and methods for thermal management of light emitting diodes
US7849275B2 (en) * 2007-11-19 2010-12-07 Sandforce, Inc. System, method and a computer program product for writing data to different storage devices based on write frequency
US7903486B2 (en) 2007-11-19 2011-03-08 Sandforce, Inc. System, method, and computer program product for increasing a lifetime of a plurality of blocks of memory
US9183133B2 (en) 2007-11-28 2015-11-10 Seagate Technology Llc System, method, and computer program product for increasing spare space in memory to extend a lifetime of the memory
US7636258B2 (en) * 2007-12-12 2009-12-22 Qimonda Flash Gmbh Integrated circuits, memory controller, and memory modules
US8656083B2 (en) * 2007-12-21 2014-02-18 Spansion Llc Frequency distributed flash memory allocation based on free page tables
US8352671B2 (en) 2008-02-05 2013-01-08 Spansion Llc Partial allocate paging mechanism using a controller and a buffer
US8275945B2 (en) 2008-02-05 2012-09-25 Spansion Llc Mitigation of flash memory latency and bandwidth limitations via a write activity log and buffer
US8209463B2 (en) * 2008-02-05 2012-06-26 Spansion Llc Expansion slots for flash memory based random access memory subsystem
US8332572B2 (en) * 2008-02-05 2012-12-11 Spansion Llc Wear leveling mechanism using a DRAM buffer
US8095724B2 (en) * 2008-02-05 2012-01-10 Skymedi Corporation Method of wear leveling for non-volatile memory and apparatus using via shifting windows
US8423739B2 (en) * 2008-02-06 2013-04-16 International Business Machines Corporation Apparatus, system, and method for relocating logical array hot spots
US8914340B2 (en) * 2008-02-06 2014-12-16 International Business Machines Corporation Apparatus, system, and method for relocating storage pool hot spots
DE102008009768B4 (de) * 2008-02-19 2011-04-07 Texas Instruments Deutschland Gmbh Inkrementierender Zähler mit verlängerter Schreiblebensdauer
JP5010505B2 (ja) * 2008-03-01 2012-08-29 株式会社東芝 メモリシステム
US8560761B2 (en) * 2008-03-31 2013-10-15 Spansion Llc Memory resource management for a flash aware kernel
KR101437123B1 (ko) * 2008-04-01 2014-09-02 삼성전자 주식회사 메모리 시스템 및 그것의 마모도 관리 방법
US20090254729A1 (en) * 2008-04-07 2009-10-08 Skymedi Corporation Method of wear leveling for a non-volatile memory
US20090259819A1 (en) * 2008-04-09 2009-10-15 Skymedi Corporation Method of wear leveling for non-volatile memory
JP4439569B2 (ja) * 2008-04-24 2010-03-24 株式会社東芝 メモリシステム
US8082385B2 (en) * 2008-05-02 2011-12-20 Sony Corporation Systematic memory shift for pre-segmented memory
US8055835B2 (en) * 2008-06-23 2011-11-08 International Business Machines Corporation Apparatus, system, and method for migrating wear spots
US8843691B2 (en) * 2008-06-25 2014-09-23 Stec, Inc. Prioritized erasure of data blocks in a flash storage device
US20100017566A1 (en) * 2008-07-15 2010-01-21 Radoslav Danilak System, method, and computer program product for interfacing computing device hardware of a computing device and an operating system utilizing a virtualization layer
US20100017588A1 (en) * 2008-07-15 2010-01-21 Radoslav Danilak System, method, and computer program product for providing an extended capability to a system
US20100017807A1 (en) * 2008-07-15 2010-01-21 Radoslav Danilak System, method, and computer program product for transparent communication between a storage device and an application
TWI389125B (zh) * 2008-07-18 2013-03-11 A Data Technology Co Ltd 記憶體儲存裝置及其控制方法
KR20100013485A (ko) 2008-07-31 2010-02-10 삼성전자주식회사 메모리 장치 및 웨어 레벨링 방법
CN101640069B (zh) * 2008-08-01 2013-12-18 群联电子股份有限公司 用于闪速存储器的平均磨损方法与平均磨损系统
US20100064093A1 (en) * 2008-09-09 2010-03-11 Radoslav Danilak System, method, and computer program product for converting data in a binary representation to a non-power of two representation
MX2011002697A (es) * 2008-09-11 2011-04-12 Nexxus Lighting Inc Luz y proceso para manufacturar una luz.
TWI364661B (en) * 2008-09-25 2012-05-21 Silicon Motion Inc Access methods for a flash memory and memory devices
KR100974215B1 (ko) * 2008-10-02 2010-08-06 주식회사 하이닉스반도체 반도체 스토리지 시스템 및 그 제어 방법
TWI470428B (zh) * 2008-10-03 2015-01-21 Phison Electronics Corp 用於非揮發性記憶體的資料程式規劃系統、記憶體管理方法及其控制器
US9128821B2 (en) * 2008-10-10 2015-09-08 Seagate Technology Llc Data updating in non-volatile memory
US8285970B2 (en) 2008-11-06 2012-10-09 Silicon Motion Inc. Method for managing a memory apparatus, and associated memory apparatus thereof
US8275933B2 (en) * 2008-11-10 2012-09-25 Fusion-10, Inc Apparatus, system, and method for managing physical regions in a solid-state storage device
US20100125696A1 (en) * 2008-11-17 2010-05-20 Prasanth Kumar Memory Controller For Controlling The Wear In A Non-volatile Memory Device And A Method Of Operation Therefor
US20100146236A1 (en) * 2008-12-08 2010-06-10 Radoslav Danilak System, method, and computer program product for rendering at least a portion of data useless in immediate response to a delete command
WO2010067361A1 (en) 2008-12-10 2010-06-17 Amir Ban Method and device of managing a reduced wear memory
US8316201B2 (en) * 2008-12-18 2012-11-20 Sandisk Il Ltd. Methods for executing a command to write data from a source location to a destination location in a memory device
US7940568B1 (en) 2008-12-30 2011-05-10 Micron Technology, Inc. Dynamic polarization for reducing stress induced leakage current
US20100174845A1 (en) * 2009-01-05 2010-07-08 Sergey Anatolievich Gorobets Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques
US8094500B2 (en) * 2009-01-05 2012-01-10 Sandisk Technologies Inc. Non-volatile memory and method with write cache partitioning
US8700840B2 (en) * 2009-01-05 2014-04-15 SanDisk Technologies, Inc. Nonvolatile memory with write cache having flush/eviction methods
US8040744B2 (en) 2009-01-05 2011-10-18 Sandisk Technologies Inc. Spare block management of non-volatile memories
US8244960B2 (en) 2009-01-05 2012-08-14 Sandisk Technologies Inc. Non-volatile memory and method with write cache partition management methods
US8250293B2 (en) * 2009-01-19 2012-08-21 Qimonda Ag Data exchange in resistance changing memory for improved endurance
US20100199020A1 (en) * 2009-02-04 2010-08-05 Silicon Storage Technology, Inc. Non-volatile memory subsystem and a memory controller therefor
KR20100091544A (ko) * 2009-02-10 2010-08-19 삼성전자주식회사 메모리 시스템 및 그 마모도 관리 방법
JP5185156B2 (ja) * 2009-02-24 2013-04-17 株式会社東芝 メモリコントローラおよび半導体記憶装置
US8239614B2 (en) 2009-03-04 2012-08-07 Micron Technology, Inc. Memory super block allocation
US8090899B1 (en) 2009-03-04 2012-01-03 Western Digital Technologies, Inc. Solid state drive power safe wear-leveling
KR101038991B1 (ko) * 2009-03-10 2011-06-03 주식회사 하이닉스반도체 메모리 영역의 균등한 사용을 위한 반도체 스토리지 시스템및 그 제어 방법
KR101586047B1 (ko) * 2009-03-25 2016-01-18 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
US8090905B2 (en) * 2009-03-27 2012-01-03 Sandforce, Inc. System, method, and computer program product for converting logical block address de-allocation information in a first format to a second format
US8671258B2 (en) 2009-03-27 2014-03-11 Lsi Corporation Storage system logical block address de-allocation management
US8230159B2 (en) 2009-03-27 2012-07-24 Lsi Corporation System, method, and computer program product for sending logical block address de-allocation status information
US20100250830A1 (en) * 2009-03-27 2010-09-30 Ross John Stenfort System, method, and computer program product for hardening data stored on a solid state disk
US8176295B2 (en) 2009-04-20 2012-05-08 Imation Corp. Logical-to-physical address translation for a removable data storage device
US8065469B2 (en) 2009-04-20 2011-11-22 Imation Corp. Static wear leveling
US8250282B2 (en) * 2009-05-14 2012-08-21 Micron Technology, Inc. PCM memories for storage bus interfaces
US20100318719A1 (en) * 2009-06-12 2010-12-16 Micron Technology, Inc. Methods, memory controllers and devices for wear leveling a memory
US8639877B2 (en) * 2009-06-30 2014-01-28 International Business Machines Corporation Wear leveling of solid state disks distributed in a plurality of redundant array of independent disk ranks
US20110004720A1 (en) * 2009-07-02 2011-01-06 Chun-Ying Chiang Method and apparatus for performing full range random writing on a non-volatile memory
US20110004718A1 (en) 2009-07-02 2011-01-06 Ross John Stenfort System, method, and computer program product for ordering a plurality of write commands associated with a storage device
US9792074B2 (en) * 2009-07-06 2017-10-17 Seagate Technology Llc System, method, and computer program product for interfacing one or more storage devices with a plurality of bridge chips
US8140712B2 (en) * 2009-07-17 2012-03-20 Sandforce, Inc. System, method, and computer program product for inserting a gap in information sent from a drive to a host device
US8516166B2 (en) * 2009-07-20 2013-08-20 Lsi Corporation System, method, and computer program product for reducing a rate of data transfer to at least a portion of memory
US8601202B1 (en) * 2009-08-26 2013-12-03 Micron Technology, Inc. Full chip wear leveling in memory device
US8036016B2 (en) * 2009-09-01 2011-10-11 Micron Technology, Inc. Maintenance process to enhance memory endurance
US8234520B2 (en) 2009-09-16 2012-07-31 International Business Machines Corporation Wear leveling of solid state disks based on usage information of data and parity received from a raid controller
US8169833B2 (en) * 2009-10-01 2012-05-01 Micron Technology, Inc. Partitioning process to improve memory cell retention
US8108737B2 (en) * 2009-10-05 2012-01-31 Sandforce, Inc. System, method, and computer program product for sending failure information from a serial ATA (SATA) solid state drive (SSD) to a host device
US8526605B2 (en) * 2009-10-09 2013-09-03 Seagate Technology Llc Data encryption to provide data security and memory cell bit wear leveling
EP2317443A1 (de) 2009-10-29 2011-05-04 Incard SA Verfahren zur Ausführung von Datenaktualisierungen in einer IC-Karte
US8013762B2 (en) * 2009-11-03 2011-09-06 Seagate Technology Llc Evaluating alternative encoding solutions during data compression
US8560770B2 (en) * 2009-11-13 2013-10-15 Seagate Technology Llc Non-volatile write cache for a data storage system
US8495281B2 (en) * 2009-12-04 2013-07-23 International Business Machines Corporation Intra-block memory wear leveling
US8285946B2 (en) 2009-12-15 2012-10-09 International Business Machines Corporation Reducing access contention in flash-based memory systems
TWI484334B (zh) * 2009-12-24 2015-05-11 Univ Nat Taiwan 非揮發記憶體的區域式管理方法
US8443263B2 (en) 2009-12-30 2013-05-14 Sandisk Technologies Inc. Method and controller for performing a copy-back operation
US8595411B2 (en) * 2009-12-30 2013-11-26 Sandisk Technologies Inc. Method and controller for performing a sequence of commands
TWI447735B (zh) * 2010-02-05 2014-08-01 Phison Electronics Corp 記憶體管理與寫入方法及其可複寫式非揮發性記憶體控制器與儲存系統
JP2011164994A (ja) * 2010-02-10 2011-08-25 Toshiba Corp メモリシステム
US8856488B2 (en) 2010-02-11 2014-10-07 Memory Technologies Llc Method for utilizing a memory interface to control partitioning of a memory module
JP5130313B2 (ja) * 2010-04-02 2013-01-30 株式会社日立製作所 管理システム及び計算機システムの管理方法
CN102375693A (zh) * 2010-08-16 2012-03-14 成都市华为赛门铁克科技有限公司 损耗均衡处理方法和系统以及固态硬盘
CN102446071B (zh) * 2010-09-30 2014-10-08 环鸿科技股份有限公司 取得一存储器状态资讯的接取方法、电子装置及程序产品
WO2012065112A2 (en) * 2010-11-12 2012-05-18 Apple Inc. Apparatus and methods for recordation of device history across multiple software emulations
TWI473105B (zh) * 2011-01-18 2015-02-11 Macronix Int Co Ltd 具有錯誤自動檢查與更正位元之三維記憶體結構
US9286204B2 (en) 2011-01-31 2016-03-15 Mitsubishi Electric Corporation Memory controller
WO2012106362A2 (en) 2011-01-31 2012-08-09 Fusion-Io, Inc. Apparatus, system, and method for managing eviction of data
CN102081576B (zh) * 2011-03-01 2012-07-11 华中科技大学 一种闪存的磨损平衡方法
US8732538B2 (en) 2011-03-10 2014-05-20 Icform, Inc. Programmable data storage management
JP2012203443A (ja) 2011-03-23 2012-10-22 Toshiba Corp メモリシステムおよびメモリシステムの制御方法
US8495386B2 (en) 2011-04-05 2013-07-23 Mcafee, Inc. Encryption of memory device with wear leveling
US8762625B2 (en) * 2011-04-14 2014-06-24 Apple Inc. Stochastic block allocation for improved wear leveling
US8862902B2 (en) * 2011-04-29 2014-10-14 Seagate Technology Llc Cascaded data encryption dependent on attributes of physical memory
US8806171B2 (en) * 2011-05-24 2014-08-12 Georgia Tech Research Corporation Systems and methods providing wear leveling using dynamic randomization for non-volatile memory
US20120303878A1 (en) * 2011-05-26 2012-11-29 International Business Machines Corporation Method and Controller for Identifying a Unit in a Solid State Memory Device for Writing Data to
US9514838B2 (en) * 2011-05-31 2016-12-06 Micron Technology, Inc. Apparatus including memory system controllers and related methods for memory management using block tables
KR20120136197A (ko) * 2011-06-08 2012-12-18 삼성전자주식회사 비휘발성 메모리에 대한 웨어 레벨링 방법
CN102841852B (zh) 2011-06-24 2015-06-17 华为技术有限公司 磨损均衡方法、存储装置及信息系统
US8626991B1 (en) * 2011-06-30 2014-01-07 Emc Corporation Multi-LUN SSD optimization system and method
JP5673396B2 (ja) * 2011-07-04 2015-02-18 富士通株式会社 情報処理システム、情報処理プログラム、情報処理方法
CN102955743A (zh) * 2011-08-25 2013-03-06 建兴电子科技股份有限公司 固态储存装置及其损耗平均控制方法
CN102439572B (zh) * 2011-10-27 2014-04-02 华为技术有限公司 控制缓存映射的方法及缓存系统
CN103959258B (zh) * 2011-12-05 2017-03-29 英特尔公司 背景重排序——具有有限开销的预防性的磨损控制机制
US9208070B2 (en) * 2011-12-20 2015-12-08 Sandisk Technologies Inc. Wear leveling of multiple memory devices
US9767032B2 (en) 2012-01-12 2017-09-19 Sandisk Technologies Llc Systems and methods for cache endurance
JP5952036B2 (ja) * 2012-03-13 2016-07-13 株式会社メガチップス 半導体メモリのリユース処理装置、及び半導体メモリ
JP5956791B2 (ja) * 2012-03-13 2016-07-27 株式会社メガチップス 半導体メモリのリユース処理装置、及び半導体メモリ
US11024352B2 (en) 2012-04-10 2021-06-01 Samsung Electronics Co., Ltd. Memory system for access concentration decrease management and access concentration decrease method
US8750045B2 (en) 2012-07-27 2014-06-10 Sandisk Technologies Inc. Experience count dependent program algorithm for flash memory
TWI509615B (zh) * 2012-08-03 2015-11-21 Phison Electronics Corp 資料儲存方法、記憶體控制器與記憶體儲存裝置
KR20140031688A (ko) * 2012-09-05 2014-03-13 삼성전자주식회사 스토리지 시스템을 위한 마모 관리 장치 및 방법
US20140129758A1 (en) * 2012-11-06 2014-05-08 Spansion Llc Wear leveling in flash memory devices with trim commands
US8954694B2 (en) 2012-11-15 2015-02-10 Western Digital Technologies, Inc. Methods, data storage devices and systems for fragmented firmware table rebuild in a solid state drive
US9430339B1 (en) 2012-12-27 2016-08-30 Marvell International Ltd. Method and apparatus for using wear-out blocks in nonvolatile memory
CN103914401B (zh) * 2013-01-06 2017-05-10 北京忆恒创源科技有限公司 具有多处理器的存储设备
CN103914409B (zh) * 2013-01-06 2017-05-10 北京忆恒创源科技有限公司 用于具有多处理器的存储设备的方法
US10445229B1 (en) 2013-01-28 2019-10-15 Radian Memory Systems, Inc. Memory controller with at least one address segment defined for which data is striped across flash memory dies, with a common address offset being used to obtain physical addresses for the data in each of the dies
US11249652B1 (en) 2013-01-28 2022-02-15 Radian Memory Systems, Inc. Maintenance of nonvolatile memory on host selected namespaces by a common memory controller
US9465732B2 (en) * 2013-03-15 2016-10-11 Sandisk Technologies Llc Binning of blocks for dynamic linking
US9195590B2 (en) * 2013-08-29 2015-11-24 Micron Technology, Inc. Sub-sector wear leveling in memories
US10019352B2 (en) 2013-10-18 2018-07-10 Sandisk Technologies Llc Systems and methods for adaptive reserve storage
GB201322075D0 (en) 2013-12-13 2014-01-29 Ibm Device for selecting a level for at least one read voltage
KR20150095360A (ko) * 2014-02-13 2015-08-21 에스케이하이닉스 주식회사 저항성 메모리 장치 및 동작 방법
TWI548991B (zh) * 2014-02-14 2016-09-11 群聯電子股份有限公司 記憶體管理方法、記憶體控制電路單元與記憶體儲存裝置
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US10068639B2 (en) 2014-04-29 2018-09-04 International Business Machines Corporation Out-of-place presetting based on indirection table
US9471428B2 (en) 2014-05-06 2016-10-18 International Business Machines Corporation Using spare capacity in solid state drives
US20150339223A1 (en) * 2014-05-22 2015-11-26 Kabushiki Kaisha Toshiba Memory system and method
US9471451B2 (en) 2014-06-18 2016-10-18 International Business Machines Corporation Implementing enhanced wear leveling in 3D flash memories
US10261899B2 (en) * 2014-09-03 2019-04-16 Infineon Technologies Ag Method, device and system for data processing using dedicated mapping between logical and physical addresses
US9542118B1 (en) 2014-09-09 2017-01-10 Radian Memory Systems, Inc. Expositive flash memory control
US9875039B2 (en) 2014-09-30 2018-01-23 Sandisk Technologies Llc Method and apparatus for wear-leveling non-volatile memory
US9563373B2 (en) 2014-10-21 2017-02-07 International Business Machines Corporation Detecting error count deviations for non-volatile memory blocks for advanced non-volatile memory block management
US10365859B2 (en) * 2014-10-21 2019-07-30 International Business Machines Corporation Storage array management employing a merged background management process
US9830087B2 (en) * 2014-11-13 2017-11-28 Micron Technology, Inc. Memory wear leveling
CN107077883B (zh) 2014-11-25 2021-04-27 三星电子株式会社 基于概率信息检测半导体存储器的被最频繁存取的地址的方法
US9990279B2 (en) 2014-12-23 2018-06-05 International Business Machines Corporation Page-level health equalization
US10339048B2 (en) 2014-12-23 2019-07-02 International Business Machines Corporation Endurance enhancement scheme using memory re-evaluation
US10055267B2 (en) * 2015-03-04 2018-08-21 Sandisk Technologies Llc Block management scheme to handle cluster failures in non-volatile memory
US10013177B2 (en) * 2015-04-20 2018-07-03 Hewlett Packard Enterprise Development Lp Low write amplification in solid state drive
US9760437B2 (en) 2015-07-01 2017-09-12 International Business Machines Corporation Error correction based on thermal profile of flash memory device
KR102513491B1 (ko) * 2015-07-15 2023-03-27 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
US9942324B2 (en) * 2015-08-05 2018-04-10 Futurewei Technologies, Inc. Rebalancing and elastic storage scheme with elastic named distributed circular buffers
WO2017058184A1 (en) * 2015-09-30 2017-04-06 Hewlett Packard Enterprise Development Lp Remapping operations
US9971685B2 (en) * 2016-04-01 2018-05-15 Intel Corporation Wear leveling based on a swapping operation between sets of physical block addresses of a non-volatile memory
US10031845B2 (en) * 2016-04-01 2018-07-24 Intel Corporation Method and apparatus for processing sequential writes to a block group of physical blocks in a memory device
US9842059B2 (en) * 2016-04-14 2017-12-12 Western Digital Technologies, Inc. Wear leveling in storage devices
US10121555B2 (en) * 2016-05-26 2018-11-06 Advanced Micro Devices, Inc. Wear-limiting non-volatile memory
US10248571B2 (en) * 2016-08-11 2019-04-02 Hewlett Packard Enterprise Development Lp Saving position of a wear level rotation
US11556462B2 (en) * 2016-08-24 2023-01-17 Futurewei Technologies, Inc. Wear-leveling method for cross-point memory for multiple data temperature zones
US10261876B2 (en) * 2016-11-08 2019-04-16 Micron Technology, Inc. Memory management
US10430085B2 (en) 2016-11-08 2019-10-01 Micron Technology, Inc. Memory operations on data
US10248333B1 (en) * 2017-02-07 2019-04-02 Crossbar, Inc. Write distribution techniques for two-terminal memory wear leveling
US10409714B1 (en) 2017-02-09 2019-09-10 Crossbar, Inc. Logical to physical translation for two-terminal memory
US10019332B1 (en) * 2017-03-10 2018-07-10 Western Digital Technologies, Inc. Non-volatile memory with program failure recovery
US10198195B1 (en) * 2017-08-04 2019-02-05 Micron Technology, Inc. Wear leveling
US10459662B1 (en) 2017-09-27 2019-10-29 Amazon Technologies, Inc. Write failure handling for a memory controller to non-volatile memory
US10642727B1 (en) 2017-09-27 2020-05-05 Amazon Technologies, Inc. Managing migration events performed by a memory controller
US20190129627A1 (en) * 2017-10-31 2019-05-02 EMC IP Holding Company LLC Method and system for wear-leveling using a multi-gap progress field
US10606743B2 (en) * 2017-12-05 2020-03-31 Micron Technology, Inc. Data movement operations in non-volatile memory
US11048644B1 (en) 2017-12-11 2021-06-29 Amazon Technologies, Inc. Memory mapping in an access device for non-volatile memory
CN107918530A (zh) * 2018-01-12 2018-04-17 江苏华存电子科技有限公司 一种非易失性存储器的磨损均衡方法和装置
US10635327B2 (en) * 2018-01-31 2020-04-28 Western Digital Technologies, Inc. Data availability during memory inaccessibility
US10585795B2 (en) * 2018-05-31 2020-03-10 Micron Technology, Inc. Data relocation in memory having two portions of data
CN108920386B (zh) * 2018-07-20 2020-06-26 中兴通讯股份有限公司 面向非易失性内存的磨损均衡及访问方法、设备和存储介质
US10761739B2 (en) * 2018-08-23 2020-09-01 Micron Technology, Inc. Multi-level wear leveling for non-volatile memory
US11537307B2 (en) * 2018-08-23 2022-12-27 Micron Technology, Inc. Hybrid wear leveling for in-place data replacement media
KR102545189B1 (ko) 2018-09-07 2023-06-19 삼성전자주식회사 스토리지 장치, 스토리지 시스템 및 스토리지 장치의 동작 방법
US10902929B1 (en) * 2019-08-29 2021-01-26 Micron Technology, Inc. Zone swapping for wear leveling memory
WO2021113420A1 (en) * 2019-12-03 2021-06-10 Burlywood, Inc. Adaptive wear leveling using multiple partitions
CN111639041B (zh) * 2020-05-29 2022-04-08 深圳宏芯宇电子股份有限公司 存储器控制方法、存储器存储装置及存储器控制器
US11429543B2 (en) * 2020-10-22 2022-08-30 Micron Technology, Inc. Managed NAND flash memory region control against endurance hacking
CN112558878B (zh) * 2020-12-16 2023-07-04 北京华弘集成电路设计有限责任公司 一种基于不同类型存储机制的空间调换方法
US11842062B2 (en) 2022-02-09 2023-12-12 Western Digital Technologies, Inc. Method of handling irregular MetaBlock wear leveling and UGSD boot time improvement

Family Cites Families (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093985A (en) * 1976-11-05 1978-06-06 North Electric Company Memory sparing arrangement
DE2840305C3 (de) 1978-09-15 1981-03-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Programmieren von wiederholt beschreibbaren Festwertspeichern
JPS5580164A (en) * 1978-12-13 1980-06-17 Fujitsu Ltd Main memory constitution control system
JPS5764383A (en) * 1980-10-03 1982-04-19 Toshiba Corp Address converting method and its device
DE3123444A1 (de) * 1981-06-12 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Verfahren und anordnung zum nichtfluechtigen speichern des zaehlerstandes einer elektronischen zaehlschaltung
DE3123654A1 (de) * 1981-06-15 1983-01-20 Vdo Adolf Schindling Ag, 6000 Frankfurt Schaltungsanordnung zur speicherung eines mehrstelligen dekadischen zaehlwerts einer von einem fahrzeug zurueckgelegten wegstrecke
US4430727A (en) * 1981-11-10 1984-02-07 International Business Machines Corp. Storage element reconfiguration
DE3200872A1 (de) 1982-01-14 1983-07-21 Sartorius GmbH, 3400 Göttingen Elektronische waage
US4530054A (en) * 1982-03-03 1985-07-16 Sperry Corporation Processor-addressable timestamp for indicating oldest written-to cache entry not copied back to bulk memory
JPS58189890A (ja) * 1982-04-30 1983-11-05 Hitachi Ltd 階層記憶装置
JPS58215795A (ja) 1982-06-08 1983-12-15 Toshiba Corp 不揮発性メモリ装置
JPS58215794A (ja) 1982-06-08 1983-12-15 Toshiba Corp 不揮発性メモリ装置
NL8202365A (nl) * 1982-06-11 1984-01-02 Philips Nv Serie-parallel-serie schuifregistergeheugen, hetwelk redundante parallelgeschakelde opslagregisters bevat, en afbeeldtoestel, voorzien van een zodanig georganiseerd beeldgeheugen.
JPS5945695A (ja) 1982-09-07 1984-03-14 Fujitsu Ltd Ｉｃメモリ
JPS59162695A (ja) 1983-03-07 1984-09-13 Nec Corp 記憶装置
JPS6049218A (ja) * 1983-08-30 1985-03-18 Nippon Denso Co Ltd 車両用走行距離計
US4612640A (en) * 1984-02-21 1986-09-16 Seeq Technology, Inc. Error checking and correction circuitry for use with an electrically-programmable and electrically-erasable memory array
JPS60179857A (ja) 1984-02-28 1985-09-13 Fujitsu Ltd キヤツシユ装置の制御方式
GB2171543B (en) * 1985-02-27 1988-04-20 Hughes Microelectronics Ltd Counting circuit which provides for extended counter life
US4718041A (en) * 1986-01-09 1988-01-05 Texas Instruments Incorporated EEPROM memory having extended life
US4953073A (en) * 1986-02-06 1990-08-28 Mips Computer Systems, Inc. Cup chip having tag comparator and address translation unit on chip and connected to off-chip cache and main memories
JPH07109717B2 (ja) 1986-05-31 1995-11-22 キヤノン株式会社 メモリ書き込み制御方法
JP2685173B2 (ja) 1986-05-31 1997-12-03 キヤノン株式会社 メモリ書き込み制御方法
JPS63183700A (ja) 1987-01-26 1988-07-29 Mitsubishi Electric Corp Ｅｅｐｒｏｍアクセス方法
US4899272A (en) * 1987-10-23 1990-02-06 Chips & Technologies, Inc. Addressing multiple types of memory devices
US4924375A (en) 1987-10-23 1990-05-08 Chips And Technologies, Inc. Page interleaved memory access
JPH0778997B2 (ja) * 1987-10-30 1995-08-23 株式会社東芝 不揮発性半導体メモリ
US4803707A (en) * 1987-12-21 1989-02-07 Ncr Corporation Nonvolatile electronic odometer with excess write cycle protection
JPH0793823B2 (ja) * 1988-02-01 1995-10-09 株式会社日立製作所 電圧形インバータのｐｗｍ制御装置
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
JPH01235075A (ja) 1988-03-14 1989-09-20 Fuji Xerox Co Ltd ディスクメモリ制御装置
US4922456A (en) * 1988-04-29 1990-05-01 Scientific-Atlanta, Inc. Method of reducing wearout in a non-volatile memory with double buffer
US5043940A (en) * 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5168465A (en) * 1988-06-08 1992-12-01 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
JP2685825B2 (ja) * 1988-08-12 1997-12-03 株式会社東芝 不揮発性半導体メモリ
JPH0283892A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体記憶装置
US5193071A (en) * 1988-12-22 1993-03-09 Digital Equipment Corporation Memory apparatus for multiple processor systems
JPH02189790A (ja) 1989-01-18 1990-07-25 Mitsubishi Electric Corp ダイナミック形半導体記憶装置
US4947410A (en) * 1989-02-23 1990-08-07 General Motors Corporation Method and apparatus for counting with a nonvolatile memory
DE69033438T2 (de) * 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
WO1994027382A1 (en) 1993-05-11 1994-11-24 Norand Corporation Premises, peripheral and vehicular local area networking
JPH0373496A (ja) 1989-05-16 1991-03-28 Seiko Epson Corp Ｅｅｐｒｏｍ書込装置
JPH0692898B2 (ja) * 1989-05-31 1994-11-16 日本精機株式会社 電子式オドメータ
FR2647941B1 (fr) * 1989-06-06 1991-08-30 Gemplus Card Int Procede d'effacement de points memoire, dispositif destine a sa mise en oeuvre, et son utilisation dans un dispositif a memoire non alimente
JPH0325798A (ja) 1989-06-23 1991-02-04 Ricoh Co Ltd Ｅｅｐｒｏｍを使用した記憶装置
JPH0330034A (ja) 1989-06-28 1991-02-08 Hitachi Ltd 光デイスクフアイル管理方法
JPH0748320B2 (ja) * 1989-07-24 1995-05-24 セイコー電子工業株式会社 半導体不揮発性メモリ
US5065364A (en) * 1989-09-15 1991-11-12 Intel Corporation Apparatus for providing block erasing in a flash EPROM
US5200959A (en) 1989-10-17 1993-04-06 Sundisk Corporation Device and method for defect handling in semi-conductor memory
US5134589A (en) * 1989-10-30 1992-07-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having a flash write function
JPH03283094A (ja) 1990-03-29 1991-12-13 Nec Corp 半導体メモリ
JPH0498342A (ja) * 1990-08-09 1992-03-31 Mitsubishi Electric Corp 半導体記憶装置
JPH04123243A (ja) 1990-09-14 1992-04-23 Toshiba Corp データ書込装置
US5303198A (en) * 1990-09-28 1994-04-12 Fuji Photo Film Co., Ltd. Method of recording data in memory card having EEPROM and memory card system using the same
US5222193A (en) * 1990-12-26 1993-06-22 Intel Corporation Training system for neural networks and the like
US5222109A (en) 1990-12-28 1993-06-22 Ibm Corporation Endurance management for solid state files
GB2251324B (en) 1990-12-31 1995-05-10 Intel Corp File structure for a non-volatile semiconductor memory
GB2251323B (en) 1990-12-31 1994-10-12 Intel Corp Disk emulation for a non-volatile semiconductor memory
JP3137993B2 (ja) 1991-01-16 2001-02-26 富士通株式会社 不揮発性半導体記憶装置
US5272669A (en) * 1991-02-20 1993-12-21 Sundisk Corporation Method and structure for programming floating gate memory cells
US5295255A (en) * 1991-02-22 1994-03-15 Electronic Professional Services, Inc. Method and apparatus for programming a solid state processor with overleaved array memory modules
US5270979A (en) * 1991-03-15 1993-12-14 Sundisk Corporation Method for optimum erasing of EEPROM
US5663901A (en) * 1991-04-11 1997-09-02 Sandisk Corporation Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systems
FR2675287B1 (fr) 1991-04-15 1993-06-18 Bull Sa Circuit coupleur et son utilisation dans une carte et procede.
DE4215063C2 (de) 1991-05-10 1999-11-25 Intel Corp Einrichtung und Verfahren zum Seitenwechsel bei einem nicht-flüchtigen Speicher
JP2582487B2 (ja) 1991-07-12 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体メモリを用いた外部記憶システム及びその制御方法
JP2549034B2 (ja) 1991-07-22 1996-10-30 株式会社メルコ 記憶装置
US5430859A (en) * 1991-07-26 1995-07-04 Sundisk Corporation Solid state memory system including plural memory chips and a serialized bus
US5245572A (en) * 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
US6230233B1 (en) * 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US5263003A (en) * 1991-11-12 1993-11-16 Allen-Bradley Company, Inc. Flash memory circuit and method of operation
JP3231832B2 (ja) 1991-11-26 2001-11-26 株式会社日立製作所 フラッシュメモリを記憶媒体とした半導体ディスク
JPH05151097A (ja) 1991-11-28 1993-06-18 Fujitsu Ltd 書換回数制限型メモリのデータ管理方式
JP3122201B2 (ja) 1991-11-30 2001-01-09 株式会社東芝 メモリカード装置
JPH05176564A (ja) * 1991-12-26 1993-07-13 Aisin Seiki Co Ltd 放射圧を利用したアクチュエータ
US5267218A (en) * 1992-03-31 1993-11-30 Intel Corporation Nonvolatile memory card with a single power supply input
US5341489A (en) * 1992-04-14 1994-08-23 Eastman Kodak Company Memory card with programmable interleaving
KR0121800B1 (ko) 1992-05-08 1997-11-22 사또오 후미오 메모리 카드장치
US5280447A (en) * 1992-06-19 1994-01-18 Intel Corporation Floating gate nonvolatile memory with configurable erasure blocks
JP3105092B2 (ja) * 1992-10-06 2000-10-30 株式会社東芝 半導体メモリ装置
JP3177015B2 (ja) * 1992-10-14 2001-06-18 株式会社東芝 半導体メモリ装置の制御方法
EP0680634B1 (de) * 1993-01-21 1997-05-14 Apple Computer, Inc. Vorrichtung und verfahren zur datensicherung von speichereinheiten in einem rechnernetzwerk
US5388083A (en) * 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
DE69321245T2 (de) * 1993-12-29 1999-04-29 Stmicroelectronics S.R.L., Agrate Brianza, Mailand/Milano Integrierte Programmierschaltung für eine elektrisch programmierbare Halbleiterspeicheranordnung mit Redundanz
US5726937A (en) * 1994-01-31 1998-03-10 Norand Corporation Flash memory system having memory cache
JP3507132B2 (ja) * 1994-06-29 2004-03-15 株式会社日立製作所 フラッシュメモリを用いた記憶装置およびその記憶制御方法
JP3219699B2 (ja) * 1996-09-17 2001-10-15 三洋電機株式会社 半導体メモリ装置
GB2317721B (en) * 1996-09-30 2001-09-12 Nokia Mobile Phones Ltd Memory device
JP3130258B2 (ja) * 1996-10-25 2001-01-31 インターナショナル・ビジネス・マシーンズ・コーポレ−ション ディスク装置及びデータ・リアサイン方法
US5890192A (en) * 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
DE19718479C1 (de) * 1997-04-30 1998-09-24 Siemens Ag Chipkarte mit Speicherzugriffsmaximierung und Protokollierung
US5930167A (en) * 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
JP4079506B2 (ja) * 1997-08-08 2008-04-23 株式会社東芝 不揮発性半導体メモリシステムの制御方法
US6000006A (en) * 1997-08-25 1999-12-07 Bit Microsystems, Inc. Unified re-map and cache-index table with dual write-counters for wear-leveling of non-volatile flash RAM mass storage
US6085102A (en) * 1997-08-29 2000-07-04 Motorola, Inc. Method and apparatus for providing coverage in a selective messaging system
JP3544859B2 (ja) * 1998-05-11 2004-07-21 富士通株式会社 不揮発性半導体メモリを使用した２次記憶装置
FR2787601A1 (fr) * 1998-12-22 2000-06-23 Gemplus Card Int Systeme de memorisation comprenant des moyens de gestion d'une memoire avec anti-usure et procede de gestion anti-usure d'une memoire
JP2000285688A (ja) * 1999-04-01 2000-10-13 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2001067258A (ja) * 1999-08-25 2001-03-16 Mitsubishi Electric Corp フラッシュメモリ内蔵半導体装置及びフラッシュメモリアドレス変換方法
US6141251A (en) * 2000-01-28 2000-10-31 Silicon Storage Technology, Inc. Non-volatile memory array having an index used in programming and erasing
US6535851B1 (en) * 2000-03-24 2003-03-18 Speechworks, International, Inc. Segmentation approach for speech recognition systems
KR100644602B1 (ko) * 2000-10-11 2006-11-10 삼성전자주식회사 플래시메모리를 위한 재사상 제어방법 및 그에 따른플래시 메모리의 구조
US6763424B2 (en) * 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
US6676281B2 (en) * 2001-05-23 2004-01-13 Sea Gull Lighting Products, Inc. Rail lighting system
US6675281B1 (en) * 2002-01-22 2004-01-06 Icreate Technologies Corporation Distributed mapping scheme for mass storage system
US6985992B1 (en) * 2002-10-28 2006-01-10 Sandisk Corporation Wear-leveling in non-volatile storage systems
US7103732B1 (en) * 2002-10-28 2006-09-05 Sandisk Corporation Method and apparatus for managing an erase count block
US7039788B1 (en) * 2002-10-28 2006-05-02 Sandisk Corporation Method and apparatus for splitting a logical block
US6973531B1 (en) * 2002-10-28 2005-12-06 Sandisk Corporation Tracking the most frequently erased blocks in non-volatile memory systems
US7096313B1 (en) * 2002-10-28 2006-08-22 Sandisk Corporation Tracking the least frequently erased blocks in non-volatile memory systems
US6831865B2 (en) * 2002-10-28 2004-12-14 Sandisk Corporation Maintaining erase counts in non-volatile storage systems
US7035967B2 (en) * 2002-10-28 2006-04-25 Sandisk Corporation Maintaining an average erase count in a non-volatile storage system
US7254668B1 (en) * 2002-10-28 2007-08-07 Sandisk Corporation Method and apparatus for grouping pages within a block
US7234036B1 (en) * 2002-10-28 2007-06-19 Sandisk Corporation Method and apparatus for resolving physical blocks associated with a common logical block

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JP4518951B2 (ja) 2010-08-04
KR20050083850A (ko) 2005-08-26
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CN100483552C (zh) 2009-04-29
US7552272B2 (en) 2009-06-23
AU2003282544A1 (en) 2004-05-25
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US20040083335A1 (en) 2004-04-29
JP2006504201A (ja) 2006-02-02
EP1556868A1 (de) 2005-07-27
ATE372578T1 (de) 2007-09-15
KR101122511B1 (ko) 2012-03-15
US7120729B2 (en) 2006-10-10
CN1720590A (zh) 2006-01-11
WO2004040586A1 (en) 2004-05-13

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