CN100504814C - 闪存的区块管理方法 - Google Patents
闪存的区块管理方法 Download PDFInfo
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- CN100504814C CN100504814C CNB2007100729806A CN200710072980A CN100504814C CN 100504814 C CN100504814 C CN 100504814C CN B2007100729806 A CNB2007100729806 A CN B2007100729806A CN 200710072980 A CN200710072980 A CN 200710072980A CN 100504814 C CN100504814 C CN 100504814C
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- 238000007726 management method Methods 0.000 title claims description 35
- 238000013507 mapping Methods 0.000 claims abstract description 104
- 230000015654 memory Effects 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000004321 preservation Methods 0.000 claims description 6
- 238000013500 data storage Methods 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 claims description 2
- 230000002159 abnormal effect Effects 0.000 description 7
- 230000003068 static effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000008672 reprogramming Effects 0.000 description 5
- 238000007667 floating Methods 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 208000000044 Amnesia Diseases 0.000 description 1
- 208000026139 Memory disease Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006984 memory degeneration Effects 0.000 description 1
- 208000023060 memory loss Diseases 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1016—Performance improvement
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
- G06F2212/1036—Life time enhancement
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7201—Logical to physical mapping or translation of blocks or pages
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7211—Wear leveling
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
Abstract
Description
Claims (13)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100729806A CN100504814C (zh) | 2007-01-17 | 2007-01-17 | 闪存的区块管理方法 |
TW096136871A TW200917021A (en) | 2007-01-17 | 2007-10-02 | Method for managing flash memory block |
PCT/CN2007/071335 WO2008089643A1 (fr) | 2007-01-17 | 2007-12-26 | Procédé de gestion d'un bloc mémoire flash |
JP2009544354A JP5031849B2 (ja) | 2007-01-17 | 2007-12-26 | フラッシュメモリのブロック管理方法 |
US12/497,368 US8122184B2 (en) | 2007-01-17 | 2009-07-02 | Methods for managing blocks in flash memories |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100729806A CN100504814C (zh) | 2007-01-17 | 2007-01-17 | 闪存的区块管理方法 |
Publications (2)
Publication Number | Publication Date |
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CN101030167A CN101030167A (zh) | 2007-09-05 |
CN100504814C true CN100504814C (zh) | 2009-06-24 |
Family
ID=38715533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100729806A Active CN100504814C (zh) | 2007-01-17 | 2007-01-17 | 闪存的区块管理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8122184B2 (zh) |
JP (1) | JP5031849B2 (zh) |
CN (1) | CN100504814C (zh) |
TW (1) | TW200917021A (zh) |
WO (1) | WO2008089643A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8122184B2 (en) | 2007-01-17 | 2012-02-21 | Memoright Memoritech (Wuhan) Co., Ltd. | Methods for managing blocks in flash memories |
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CN101604291B (zh) * | 2008-06-12 | 2012-07-18 | 联阳半导体股份有限公司 | 增进多级单元非挥发性内存的数据存取可靠度的方法 |
CN101634967B (zh) * | 2008-07-24 | 2012-01-04 | 群联电子股份有限公司 | 用于闪存的区块管理方法、储存系统与控制器 |
CN101751981B (zh) * | 2008-12-12 | 2014-04-30 | 苏州亮智科技有限公司 | 闪存存储装置中保护数据安全的方法 |
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JP4952742B2 (ja) * | 2009-04-15 | 2012-06-13 | Tdk株式会社 | メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法 |
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CN101710253B (zh) * | 2009-11-25 | 2012-06-13 | 安凯(广州)微电子技术有限公司 | 嵌入式系统的深度休眠方法 |
TWI416525B (zh) * | 2009-12-15 | 2013-11-21 | Asolid Technology Co Ltd | 非揮發性記憶體裝置及其損耗平均方法 |
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CN102163131B (zh) * | 2010-02-24 | 2013-03-06 | 慧荣科技股份有限公司 | 闪存的数据存取方法以及闪存装置 |
CN101894076B (zh) * | 2010-07-22 | 2012-08-29 | 深圳市江波龙电子有限公司 | 一种提高存储设备写入速度的实现方法及系统 |
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CN102622309B (zh) * | 2011-01-30 | 2016-03-30 | 华为数字技术(成都)有限公司 | 数据安全擦除方法及装置 |
US9727570B2 (en) | 2011-06-03 | 2017-08-08 | Apple Inc. | Mount-time unmapping of unused logical addresses in non-volatile memory systems |
KR101818445B1 (ko) | 2011-07-08 | 2018-01-16 | 삼성전자주식회사 | 메모리 컨트롤러, 이의 동작 방법, 및 상기 메모리 컨트롤러를 포함하는 전자 장치들 |
TWI459198B (zh) | 2011-07-08 | 2014-11-01 | Phison Electronics Corp | 記憶體儲存裝置、其記憶體控制器與有效資料識別方法 |
CN102890655B (zh) * | 2011-07-20 | 2015-07-08 | 群联电子股份有限公司 | 存储器储存装置、其存储器控制器与有效数据识别方法 |
CN102662849B (zh) * | 2012-03-07 | 2015-12-16 | 忆正科技(武汉)有限公司 | 多通道闪存的区块管理方法 |
CN102650972B (zh) * | 2012-04-06 | 2016-12-14 | 国民技术股份有限公司 | 数据存储方法、装置及系统 |
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CN103577342B (zh) | 2012-07-25 | 2018-04-17 | 慧荣科技股份有限公司 | 管理闪存中所储存的数据的方法及相关记忆装置与控制器 |
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- 2007-10-02 TW TW096136871A patent/TW200917021A/zh not_active IP Right Cessation
- 2007-12-26 WO PCT/CN2007/071335 patent/WO2008089643A1/zh active Application Filing
- 2007-12-26 JP JP2009544354A patent/JP5031849B2/ja active Active
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2009
- 2009-07-02 US US12/497,368 patent/US8122184B2/en active Active
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Flash存储器文件存储格式的探讨. 苏沿凯,全文,中国科学院计算技术研究所硕士学位论文. 1998 |
Flash文件系统的研究与设计. 沈建华,罗悦怿.计算机应用研究,第12期. 2004 |
Flash文件系统的研究与设计. 沈建华,罗悦怿.计算机应用研究,第12期. 2004 * |
基于NAND型闪存的嵌入式文件系统设计. 李庆诚,孙明达.计算机应用研究,第4期. 2006 |
基于NAND型闪存的嵌入式文件系统设计. 李庆诚,孙明达.计算机应用研究,第4期. 2006 * |
嵌入式系统中的Flash存储管理. 陈峰,尹寒.单片机与嵌入式系统应用,第2期. 2003 |
嵌入式系统中的Flash存储管理. 陈峰,尹寒.单片机与嵌入式系统应用,第2期. 2003 * |
嵌入式系统中的Flash文件系统. 陈智育.单片机与嵌入式系统应用,第2期. 2002 |
嵌入式系统中的Flash文件系统. 陈智育.单片机与嵌入式系统应用,第2期. 2002 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8122184B2 (en) | 2007-01-17 | 2012-02-21 | Memoright Memoritech (Wuhan) Co., Ltd. | Methods for managing blocks in flash memories |
Also Published As
Publication number | Publication date |
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JP2010515179A (ja) | 2010-05-06 |
US20090271567A1 (en) | 2009-10-29 |
WO2008089643A1 (fr) | 2008-07-31 |
TWI351604B (zh) | 2011-11-01 |
TW200917021A (en) | 2009-04-16 |
CN101030167A (zh) | 2007-09-05 |
JP5031849B2 (ja) | 2012-09-26 |
US8122184B2 (en) | 2012-02-21 |
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