CN111552650B - 一种数据保存方法、装置、存储介质和数据存储设备 - Google Patents
一种数据保存方法、装置、存储介质和数据存储设备 Download PDFInfo
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- CN111552650B CN111552650B CN202010285351.7A CN202010285351A CN111552650B CN 111552650 B CN111552650 B CN 111552650B CN 202010285351 A CN202010285351 A CN 202010285351A CN 111552650 B CN111552650 B CN 111552650B
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- 238000013500 data storage Methods 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000013507 mapping Methods 0.000 claims abstract description 46
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 238000012544 monitoring process Methods 0.000 claims description 28
- 238000004590 computer program Methods 0.000 claims description 15
- 230000014759 maintenance of location Effects 0.000 claims description 14
- 238000007599 discharging Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 230000036962 time dependent Effects 0.000 abstract description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7202—Allocation control and policies
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- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
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CN202010285351.7A CN111552650B (zh) | 2020-04-13 | 2020-04-13 | 一种数据保存方法、装置、存储介质和数据存储设备 |
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CN111552650A CN111552650A (zh) | 2020-08-18 |
CN111552650B true CN111552650B (zh) | 2021-03-02 |
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CN112558871B (zh) * | 2020-12-11 | 2022-12-20 | 成都佰维存储科技有限公司 | 闪存数据保存分析方法、装置、可读存储介质及电子设备 |
Citations (4)
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---|---|---|---|---|
CN103425586A (zh) * | 2012-05-17 | 2013-12-04 | 群联电子股份有限公司 | 储存单元管理方法、存储器控制器与存储器储存装置 |
CN104424112A (zh) * | 2013-08-30 | 2015-03-18 | 慧荣科技股份有限公司 | 数据储存装置以及快闪存储器控制方法 |
CN108897492A (zh) * | 2018-05-30 | 2018-11-27 | 新华三技术有限公司 | 一种数据写入方法和装置 |
CN109274752A (zh) * | 2018-10-10 | 2019-01-25 | 腾讯科技(深圳)有限公司 | 区块链数据的访问方法及装置、电子设备、存储介质 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100504814C (zh) * | 2007-01-17 | 2009-06-24 | 忆正存储技术(深圳)有限公司 | 闪存的区块管理方法 |
CN102981977A (zh) * | 2011-09-05 | 2013-03-20 | 上海华魏光纤传感技术有限公司 | 一种可延长flash使用寿命的数据存储方法 |
US10454619B2 (en) * | 2016-11-08 | 2019-10-22 | Microsoft Technology Licensing, Llc | Advanced retry mechanism for transmitting large datasets |
US10949113B2 (en) * | 2018-01-10 | 2021-03-16 | SK Hynix Inc. | Retention aware block mapping in flash-based solid state drives |
US20190294345A1 (en) * | 2018-03-21 | 2019-09-26 | Super Talent Technology Corp. | Data-Retention Controller Using Mapping Tables in a Green Solid-State-Drive (GNSD) for Enhanced Flash Endurance |
CN109491596B (zh) * | 2018-10-08 | 2020-07-10 | 华中科技大学 | 一种降低电荷捕获型3d闪存中数据保存错误率的方法 |
CN109558274B (zh) * | 2018-10-24 | 2023-08-15 | 大唐微电子技术有限公司 | 一种信息处理方法、装置及计算机可读存储介质 |
CN109830255B (zh) * | 2018-12-17 | 2020-11-17 | 武汉忆数存储技术有限公司 | 一种基于特征量的闪存寿命预测方法、系统及存储介质 |
CN110347335B (zh) * | 2019-07-30 | 2022-12-13 | 河南文正电子数据处理有限公司 | 一种固态硬盘数据存储方法、装置 |
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- 2020-04-13 CN CN202010285351.7A patent/CN111552650B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103425586A (zh) * | 2012-05-17 | 2013-12-04 | 群联电子股份有限公司 | 储存单元管理方法、存储器控制器与存储器储存装置 |
CN104424112A (zh) * | 2013-08-30 | 2015-03-18 | 慧荣科技股份有限公司 | 数据储存装置以及快闪存储器控制方法 |
CN108897492A (zh) * | 2018-05-30 | 2018-11-27 | 新华三技术有限公司 | 一种数据写入方法和装置 |
CN109274752A (zh) * | 2018-10-10 | 2019-01-25 | 腾讯科技(深圳)有限公司 | 区块链数据的访问方法及装置、电子设备、存储介质 |
Non-Patent Citations (1)
Title |
---|
NAND Flash纠错策略优化研究;刘传奇;《中国优秀硕士学位论文全文数据库 信息科技辑》;20190615;I137-33 * |
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