TWI253564B - Method of efficient data management with flash storage system - Google Patents
Method of efficient data management with flash storage system Download PDFInfo
- Publication number
- TWI253564B TWI253564B TW93119158A TW93119158A TWI253564B TW I253564 B TWI253564 B TW I253564B TW 93119158 A TW93119158 A TW 93119158A TW 93119158 A TW93119158 A TW 93119158A TW I253564 B TWI253564 B TW I253564B
- Authority
- TW
- Taiwan
- Prior art keywords
- block
- data
- written
- rti
- segment
- Prior art date
Links
Landscapes
- Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
Abstract
Description
1253564 五、發明說明(1) 【發明所屬之技術領域】 、本發明係有關於-種快閃記憶體資料存取管理系統與 方^,特別是指-種主機以邏輯區段寫入快閃記憶體元件 ’:,憶體時:❿也—併記錄其所屬區塊的虛擬區段 成y 钱制表以達到在不影響主機依 逛輯區段存取協定的前提下,伊、# 迷存取資料。 【先前技術】 快閃記憶體係一種低耗電、古十 移動性、高穩定性等安全資料存:f:取速度…方震、耐 記錄(或消除)。此外,^丨”段(blocks)方式來 就不再需要任何電源用來保:存,閃5憶體之2, 技術即使電源是在關掉後仍可侔、—般而3 ,以目珂之 上。這種優勢e你尸甘A 了保邊儲存的資料至少十年以 如,比較傳統電腦^運可攜,儲存系統黯然失色。例 碟或者是軟碟儲存資料 量儲存裝置:皆使用例如硬 碟,皆需使用到區、告 ,由於不論是硬碟或是軟 料旋轉到指定位置後轉此磁性物胃’將所欲儲存的資 的可攜性。此外後這種儲存裝置,將不利於電.腦 裝置之錯誤,甚;;:可“為震動的問題而導致此儲存 快閃記憶體具有十足 口此和其它的儲存媒體相比較, 第8頁 1253564 五、發明說明(3) 快閃記憶體威m隐體讀取資料u輯區段容量 此主機對於賁料的存取和快閃記又^使用區塊/觀fV,1253564 V. Description of the Invention (1) Technical Field of the Invention The present invention relates to a flash memory data access management system and a method, in particular, a host writes a flash in a logical sector. Memory component ':, when the body is remembered: ❿ also - and record the virtual section of the block to which it belongs to y money tabulation to achieve the premise of not affecting the host in accordance with the access section agreement, Iraq, # fans Access data. [Prior Art] Flash memory system is a kind of low-power consumption, ancient ten mobility, high stability and other security data: f: take speed... square shock, record resistance (or elimination). In addition, the ^丨"blocks method does not require any power supply to protect: save, flash 5 recall 2, technology even if the power is turned off after the turn off, -3, to see Above. This advantage is that you have to store the information for at least 10 years, compared with the traditional computer, the storage system is eclipsed. Case or floppy storage data storage device: use For example, a hard disk needs to be used in a zone or a slogan. Since the hard disk or the soft material is rotated to a designated position, the magnetic material of the stomach will be stored. It will be detrimental to the error of the electric brain device; very:; "can be caused by the vibration problem, this storage flash memory has a full mouth and compared with other storage media, page 8 1235564 five, invention description (3 ) Flash memory body m hidden data u section capacity This host access to the data and flash flash and ^ use block / view fV,
輯區段與虛擬區段換算表。快閃^f 11 ^ J 性,即快閃釔憶體一開始使用p心月旦寫入貝料尚有寸 區塊内每一 e憶單元的資料,抹除(^ase)所有每一 (floating gate)的電荷,此日士母—圮憶胞的淨置閘極、 表示。寫入資料時係對指定區、母汜憶胞以電壓位準1 (p r 〇 g r a m m i n g)即將該區塊内的'$ °己匕胞進行私式化 電荷。即將電壓位準1變化為泰=些圮憶胞浮置閘極存入 傳統快閃記憶體只能以區塊為%資|:位_準0。依照這種特性, 使區塊内仍有足夠的記憶頁可寫入或抹除的基礎,即 邏輯區段與虛擬區段換算表的、資料舄入。因此,為配合 輯區段寫入對應的虛擬區段時寫入協定’而欲將資料由邏 資料就必須常進行搬移(m〇 v e )、決f記憶體的記憶頁内的 記憶體的使用壽命是不利的。1禝製的動作。這對於快閃 : 4外,也不利於寫入效率。 有鑒於此,本發明將提供一 表(Vlrtual bl0ck t0 physi種排序機制與建立一 V2P 在此種機制下,資料的 I table)的概念。 ,基礎,而“頁或座擬區體不再询限…塊 應的虛擬區槐有空的連續記情J基:::要邏輯區段所對 納!寫入的f料時,就可以:據本發;ΐ:憶頁又足以容 這些記憶頁,並争τ Γςρ Μ依據本七明的方法將資料寫入 亚更正FSP的狀態。此處貝:十舄入 卜戶斤指的空記Edit section and virtual section conversion table. Flash ^f 11 ^ J sex, that is, the flash memory is initially used to write the heart of the moon, and the data of each e-memory in the block is erased (^ase) all (floating) The charge of the gate, this day, the mother-in-law, the net gate of the memory, said. When the data is written, the voltage level 1 (p r 〇 g r a m m i n g) of the designated area and the mother cell is the private charge of the '$° cell in the block. That is, the voltage level 1 is changed to Thai = some memory floating gate is stored in the traditional flash memory can only be used as a block % | | bit _ quasi 0. According to this feature, there are still enough memory pages to be written or erased in the block, that is, data intrusion into the logical segment and virtual segment conversion table. Therefore, when writing the corresponding virtual segment for the matching segment, the protocol is written, and the data must be moved from the logical data (m〇ve), and the memory in the memory page of the memory is used. Life expectancy is unfavorable. 1 的 action. This is not good for writing efficiency for flash: 4. In view of this, the present invention will provide a concept of a table (Vlrtual bl0ck t0 physi sorting mechanism and establishing a V2P under this mechanism, I table of data). , the basis, and the "page or seat area is no longer inquiries... The virtual area of the block should be empty and continuous J-series::: The logical section should be matched! When writing the f material, you can : According to this hair; ΐ: Recalling the page is enough to accommodate these memory pages, and contends τ Γςρ Μ according to the method of this seven Ming to write the data into the state of the sub-correction FSP. Here: the ten 舄 舄 舄 户Remember
第10頁 1253564 五、發明說明(4) 憶頁,係指該記憶頁是可用的(a v a 1丨a b 1 e )允許被寫入資 料的記憶頁。當邏輯區段所對應的虛擬區塊沒有空的連續 記憶頁,或,即使有,但該連續記憶頁不足以容納待寫入 的資料時,依據本發明的方法,仍可將資料寫入新的虛擬 區塊的第0個區段(第0記憶頁)内,並同時記錄其對應關係 於排序機制表内。因此,達到在不影響主機依邏輯區段存 取協定的前提下,快速存取資料,但又可明顯減少快閃記 憶體資料搬移次數,而達到延長使用壽命之目的。 【發明内容】 本發明揭露一種快閃記憶體資料存取管理,特別是指 一種主機以邏輯區段寫入快閃記憶體元件之實體記憶體 時,同時也一併記錄其所屬區塊的虛擬區段與邏輯區段號 碼對照的排序機制表及V 2P表,因此,在不影響主機依邏 輯區段存取協定的前提下,達到快速存取資料,但又可明 顯減少快閃記憶體資料搬移次數,而達到延長使用壽命之 目的。 本發明對於資料缓衝區的待寫入資料(邏輯區段N或/ 及邏輯區段Μ )寫入快閃記憶體時可分成以下幾種情況討 論:(1 )當該標的區塊是空的時,寫在對應之快閃記憶體 區塊的第0個區段(或第0記憶頁)内,不管該第0個區段(或 第0記憶頁)是否就是邏輯區段Ν所對應的位置,上述及以 下之邏輯區段Ν表示第Ν’個邏輯區段起共η個邏輯區段。Page 10 1253564 V. INSTRUCTIONS (4) Recalling pages means that the memory page is available (a v a 1丨a b 1 e ) memory pages that are allowed to be written to the data. When the virtual block corresponding to the logical segment has no empty consecutive memory pages, or if there is, the continuous memory page is insufficient to accommodate the data to be written, according to the method of the present invention, the data can be written into the new Within the 0th sector (0th memory page) of the virtual block, and simultaneously record its correspondence in the sorting mechanism table. Therefore, the data can be quickly accessed without affecting the host's logical section access agreement, but the number of flash memory data movements can be significantly reduced, thereby achieving the purpose of extending the service life. SUMMARY OF THE INVENTION The present invention discloses a flash memory data access management, in particular, when a host writes a physical memory of a flash memory component in a logical segment, and simultaneously records the virtuality of the tile to which it belongs. The sorting mechanism table and the V 2P table of the section and the logical section number are compared, so that the fast access data can be achieved without affecting the host according to the logical sector access agreement, but the flash memory data can be significantly reduced. Move the number of times to achieve the purpose of extending the service life. The invention can be divided into the following cases when writing the data to be written in the data buffer (logical segment N or / and logical segment Μ) into the following cases: (1) when the target block is empty When it is written in the 0th sector (or 0th memory page) of the corresponding flash memory block, regardless of whether the 0th sector (or 0th memory page) is the logical sector The location, the logical segment above and below Ν indicates that the logical segment is a total of n logical segments.
第11頁 1253564 五、發明說明(6) 第Μ’ -1區段(記憶頁)寫入該區塊C内再將第二筆邏輯區段 Μ寫入區塊C内,隨後,再將區塊B之第Μ ’+ πι區段起至第 Ν’ + η- 1的資料複製至區塊C内,再將標的區塊Α之第Ν’ +η起 及其後的資料寫入區塊C内,最後將區塊C標示為標的區 塊。(6 ) 當該標的區塊已有資料且所對應的標的區段(或 標的頁)不足以容納邏輯區段Ν時:找一新的區塊寫在該標 的的區塊内。 【實施方式】 如發明背景所述,傳統快閃記憶體不論程式化或資料 抹除都是以區塊為基礎。此外,由主機傳送來之邏輯區段 資料塊都必須寫在新的區塊,如此才能使邏輯區段與快閃 記憶體内的虛擬區段對應。本發明可以突破上述的限制, 只要標的區塊是空的時,都可以依序由低記憶頁往高記憶 頁依序寫入。此外,若標的區塊已有資料時,快閃記憶體 元件之控制晶片很容易找到快閃記憶體中任何可寫入資料 的區塊及其區段’而將貢料舄入。 為方便說明起見,在本說明書中皆以1記憶頁相等於1 區段為例,任何熟悉相關技藝者,應可輕易應用本發明之 精神而實施於1記憶頁相等於4區段的情況,因為這兩者之 間只在邏輯區段與虛擬區段的轉換而已。 依據本發明的方法,快閃記憶體之每一區塊(b 1 〇 c k)Page 11 1253564 V. Description of the invention (6) The Μ' -1 section (memory page) is written in the block C and then the second logical section Μ is written into the block C, and then the zone is The data from the first block of block B from '+ πι segment to Ν' + η-1 is copied into block C, and the data from the Ν' + η of the target block and the subsequent data are written into the block. In C, the block C is finally marked as the target block. (6) When the target block has data and the corresponding target segment (or target page) is not enough to accommodate the logical segment :: find a new block written in the target block. [Embodiment] As described in the background of the invention, conventional flash memory is block-based regardless of stylization or data erasure. In addition, the logical sector data blocks transmitted by the host must be written in new blocks so that the logical segments correspond to the virtual segments in the flash memory. The present invention can break through the above limitations, and can be sequentially written from a low memory page to a high memory page in sequence as long as the target block is empty. In addition, if the target block has data, the control chip of the flash memory component can easily find any block of data that can be written in the flash memory and its section, and the tribute is broken. For convenience of description, in the present specification, a memory page is equivalent to one segment, and any person skilled in the art should be able to apply the spirit of the present invention to one memory page equivalent to four segments. Because the conversion between the logical segment and the virtual segment is only between the two. According to the method of the present invention, each block of the flash memory (b 1 〇 c k)
第13頁 I253564Page 13 I253564
狀態。另外,最 ,而當最高位元是 (9) 發明說明 ^ 70〔即第F位元)係用以描述該區塊物理 呵士位凡是1時,表示區塊(bl ock)是好的 ^ ’表示區塊(bl 〇ck)有瑕疵。 以下,我們將利用流程圖說明如何 FSP及排序機制SVST,達成在不影響主H用入V2F表格中的 的前題下,JL /1、&次^ , 舄 陕閃δ己憶體 壽命及寫入效率。 長陕閃纪體使用 本發明對於資料緩衝區的待寫入 時可分成幾種情況加以討論。以下的閃記憶體 暫存區戋缓衝F的資《沾於力丨下的时输中我們也假設在 曰什匕4成衝&的貝科的佇列順序是 個邏輯區段及第二筆資料Μ包含 、”匕3有11 手貝了寸μ巴3有^個邏輯區段。 螇 衝區係指在主機或快閃記情參署ώ i铒 而所速級 記憶體(R AM)。典型情況如下Μ λ^ ^ 〇, ^t 下(1)當該標的區塊是空的 時。(2)當弟一筆貧料 ,兮 們及弟一葦貢料Μ之標的區塊都是空 的時。(3)當該標的區堍ρ右次 广,冰 ,斗、挪AA百、W 、— 兄巳有貝抖且所對應的標的區段 (或4示的頁)足以各納邏親par $ Μ , a,,、, η α科k 時。(4)當該標的區塊已 有貢料且所對應的標的區 J U奴(或標的頁)足以容納第一筆資 料N與第二筆資料Μ (且俨认土, ^只)疋分η乐事貝 λ 斤 ^ 彳示的起始區段分別為第Ν’及第Μ’區 段),且第二筆資料Μ位於、器#广 ^ ^ ^ ^ ^ . 位於遴輯區段N之後時。(5 )當該標 的區塊已有貧料且所對應 第一筆資料N與第二筆資料的M,<N,時。 (6)當《的區塊已有資料且所對應=濟的區段(或標的status. In addition, the most, and when the highest bit is (9) invention description ^ 70 [that is, the F-th bit) is used to describe the physical physicist position of the block is 1, when the block (bl ock) is good ^ ' Indicates that the block (bl 〇ck) is defective. Below, we will use the flow chart to explain how the FSP and the sorting mechanism SVST achieve the premise of not affecting the use of the main H into the V2F table, JL /1, & Write efficiency. The use of the Changsha Flash Particles The present invention can be divided into several cases for the data buffer to be written. The following flash memory temporary storage area buffers F's capital. We also assume that the order of the Becco's queue is a logical section and the second. The pen data contains, "匕3 has 11 lbs. Inch MU3 has ^ logical sections. The rushing area refers to the speed memory (R AM) in the host or flash memory. The typical situation is as follows: λ^ ^ 〇, ^t (1) When the target block is empty. (2) When the younger brother is poor, the block of the tribute to us and the younger brother are all When it is empty. (3) When the target area 堍 ρ is wide, ice, bucket, and AA hundred, W, — brothers and sisters have a shake and the corresponding target section (or 4 pages) is enough Logic parent par $ Μ , a,,,, η α 科 k. (4) When the target block has a tribute and the corresponding target area JU slave (or target page) is enough to accommodate the first data N and The second data Μ (and 俨 俨 ,, ^ only) 疋 乐 乐 乐 乐 贝 λ λ 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及器#广^ ^ ^ ^ ^ . Located in the section of N (5) When the target block has a poor material and corresponds to the first data N and the second data M, < N, (6) when the block has data and corresponds = section of the economy (or target
1253564 五、發明說明(10) 頁)不足以容納資料N時。1253564 V. Invention description (10) page) is not enough to accommodate data N.
先說明第(1 )種及第(2)種情況:當該標的區塊是空的 時;第一筆資料N,第二筆資料Μ。首先,請參考圖3的流 程圖中步驟4 1 0判斷第一筆資料Ν的標的起始區段Ν’是否就 是第0個區段。若π是",請參考步驟4 2 0將第一筆資料Ν寫 入區塊(b 1 oc k ) Β的第0個區段起至第η- 1個區段内,並更新 V2P表格的FSP為使FSP = n,η以二進位表示。邏輯區段與虛 擬區段號碼之位置關係則同時記錄於SVSTFirst, the case of (1) and (2) will be explained: when the target block is empty; the first data N, the second data Μ. First, please refer to step 4 1 0 in the flowchart of Fig. 3 to determine whether the target start segment Ν' of the first data 就 is the 0th segment. If π is ", please refer to step 4 2 0 to write the first data Ν into the 0th segment of the block (b 1 oc k ) 起 to the η-1 segment, and update the V2P table. The FSP is such that FSP = n and η is represented by binary. The positional relationship between the logical segment and the virtual segment number is recorded in SVST
步驟420後,進行步驟4 3 0,判斷是否有第二筆資料 Μ。若步驟430之結果為π否"則結束步驟431。若步驟4 3 0之 結果為η是”,則進行步驟44 0,以判斷第二筆資料寫入的 標的區塊是否也在區塊Β。若步驟44 0之結果為π 是",緊 接著請參考步驟4 5 0 :判斷是否第二筆資料Μ的起始標的區 段Μ’是否緊跟著就在第一筆資料Ν之後,即由第η區段開 始。若步驟4 50之結果為π是”,則前進至步驟4 6 0 :將第二 筆資料Μ寫入虛擬區塊(b lock )Β内並更新FSP。同時也如上 更新SVSP。若步驟4 5 0之結果為”否"則仍然寫入m個區段資 料於第一筆資料N的結束起的區段内,SVST也一併更新, 但將目前的FSP指標變更為0。 若步驟4 4 0之結果為π否π ,則緊接著請參考步驟 441 :結束區塊Β再找空的區塊C。以處理第二筆資料Μ,其After step 420, step 4 3 0 is performed to determine whether there is a second data Μ. If the result of step 430 is π No " then step 431 ends. If the result of step 4 30 is η is ", then step 44 0 is performed to determine whether the target block written by the second data is also in the block. If the result of step 44 0 is π is " Then refer to step 4 5 0: to determine whether the starting segment Μ ' of the second data Μ is immediately after the first data ,, that is, starting from the η segment. If the result of step 4 50 If π is "", proceed to step 4 6 0: write the second data Μ into the virtual block (b lock ) and update the FSP. Also update SVSP as above. If the result of step 4 50 is "No", then the m segment data is still written in the segment from the end of the first data N, and the SVST is also updated, but the current FSP index is changed to 0. If the result of step 4 4 0 is π no π, then please refer to step 441: end block Β and then find empty block C. To process the second data,
第17頁 1253564 _ 五、發明說明(Π) 。並將目前的F S P指標 樣 =1前述^ 筆f料 雙更為〇。 是將ϊ:Ξ:Ν步:410。若結果為"否",請參考步驟421也 的 焉入區塊(block)B的虛擬區段第〇個區段起 制於SRO中 ^州表格的㈣使FSP = Q,並記錄排序機 料。^ Ϊ .:4步23=2果行步驟4 2 3判斷是否有第二筆f 步驟42 3 〇士果為Γ曰為目否"則如步驟4 2 5所示:、结束。若 標的區塊/否/户疋,則步驟4 24判斷第二筆資料寫入的 緊接著。若步驟424之結果為”否'則 似:將_ί;:ί=··「找空的區塊C °接著請參考步驟 ^ ^SP „,: , - 步驟424之社果為"θ " r σ己錄排序枝制表於SRAM中。若 段資料於區:B:第:起的:=著”考步驟4 2 6將m個區 SRAM中。〇 £ &内’同時記錄排序機制表於 .接著說明第(3)種情 對應的標的區段(或標的 *考圖4的流程圖。 况:當該標的區塊A已有資料且所 頁)足以容納第一筆資料N時:請Page 17 1253564 _ V. Description of invention (Π). And the current F S P index =1 is the same as the above. Yes will be: Ξ: Ν step: 410. If the result is "no", please refer to step 421 also to insert the virtual section of block B (the second section) from the SRO in the ^ state table (four) to make FSP = Q, and record sorting Material. ^ Ϊ .: 4 Steps 23=2 Fruit Steps Step 4 2 3 Determine if there is a second pen f Step 42 3 If the gentleman is Γ曰 目 目 No " then as shown in step 4 2 5:, end. If the target block/no/household, then step 424 determines that the second data is written. If the result of step 424 is "No", it would be like: _ί;: ί=·· "Fallow block C ° then refer to step ^ ^SP „,:, - the result of step 424 is "θ " r σ 录 录 Sorting the branches in the SRAM. If the segment data is in the area: B: the first: from: = "Test step 4 2 6 will be m area SRAM. 〇 £ & inside 'simultaneous record sorting mechanism table. Then explain the (3) corresponding situation The target section (or the standard * test flow chart of Figure 4. Condition: when the target block A has data and pages) is enough to accommodate the first data N: please
第18頁Page 18
1253564 五、發明說明(13) 第二筆邏輯區段Μ,但邏輯區段μ的起始位置位於邏輯區段 Ν之前時··寫入第一筆資料的情況與情況(2)的步驟5 2 0至 5 5 0相同,故這不再贅述,緊接著請參考圖6的流程圖。如 步驟7 1 0所示:找新的空白區塊(b丨〇 c k ),例如區塊 (block)C。接著,請參考步驟72〇 ··區塊(M〇ck )B之第〇區 丰又至弟Μ ~ 1區段的資料拷貝至區塊(b丨〇 c ^ ) c。請參考步驟 7 3 0 ··再將缓衝區的第二筆資料M寫到區塊❶以以儿的第 Μ起的區段内。隨後,如步驟74 〇 ··將區塊(b丨〇 ck ) B第 M +ra至第Ν’ + n-l區段之間的資料拷貝至區塊(M〇ck)c内, 再接著,如步驟7 5 0將區塊(b 1 〇 c k ) A之第N ’ + η起區段的資 料寫入區塊C對應的區段之中。此時區塊(bi〇ck)c已是區 塊(b ]_ 〇 c k) A的翻版外加N及Μ兩串邏輯區段。因此,請來考 步驟760 :抹除區塊(block)A及區塊(M〇ck)B的資料,並 舌主記區塊(b 1 〇 c k ) C為原區塊(Μ 〇 c k) A。 接著說明第(6)種情況:當該標的區塊已有資料且所 票的區段(或標的頁)不足以容納邏輯區段N時:找 新的區塊寫在該標的的區塊内。 因此’依據本發明的方法,當本德 ^ 1¾ ^ ^ a p 〇 π π ^ 田主钱钬碩取快閃記憶體 1谷s守右發現F S P = 0日$,只需要杏% 後昭#辦U4 γ 士 要查5旬排序機制SVST,然 1夂,、、、表所列的順序就可以讀到虛播㈣ 關# 4 k 4又與邏輯區段的對岸、 關你。若發現FSP #〇時’則按區 罕耳杈。對應1253564 V. Description of invention (13) The second logical segment Μ, but the starting position of the logical segment μ is located before the logical segment ··· the case of writing the first data and the step 5 of the case (2) 2 0 to 5 5 0 are the same, so this will not be described again, and then refer to the flowchart of FIG. 6 . As shown in step 7 1 0: find a new blank block (b丨〇 c k ), such as block C. Next, please refer to step 72〇··The block of the block (M〇ck)B. The data of the section 1 is copied to the block (b丨〇 c ^ ) c. Please refer to step 7 3 0 ·· and then write the second data M of the buffer to the section of the block. Then, as in step 74, the data between the block (b丨〇ck) B M+ra to the Ν' + nl segment is copied into the block (M〇ck) c, and then, as Step 750: Write the data of the section N' + η of the block (b 1 〇 ck ) A into the section corresponding to the block C. At this time, the block (bi〇ck)c is already a replica of the block (b]_ 〇 c k) A plus N and Μ two strings of logical segments. Therefore, please refer to step 760: erase the data of block A and block (M〇ck) B, and the main block (b 1 〇 ck ) C is the original block (Μ 〇 ck) A. Next, the case (6) is explained: when the target block has data and the ticket segment (or target page) is insufficient to accommodate the logical segment N: the new block is written in the target block. . Therefore, according to the method of the present invention, when Bend ^ 13⁄4 ^ ^ ap 〇 π π ^ field master Qian Shuo Shuo flash memory 1 valley s 守 right found FSP = 0 day $, only need apricot% after Zhao # U4 γ Shi will check the 5th sorting mechanism SVST, but the order listed in the table, you can read the virtual broadcast (4) off # 4 k 4 and the opposite side of the logical section, off you. If you find FSP #〇, then you will be deaf. correspond
由衣排序機制SVST的存在,當待穹A、 「J 行舄入的區塊是空白時,本By the existence of the clothing sorting mechanism SVST, when the block in which the "J line breaks in is blank, this
第20頁 1253564 五、發明說明(14) 發明可以將邏輯區段資料按寫入順序寫入於區塊的最開始 處,再利用排序機制SVST提供虛擬區段和邏輯區段的對應 關係。當待寫入的區塊是不是空白,但對應於待寫入的邏 輯區段是空白時,本發明可以將邏輯區段資料按邏輯區段 順序舄入於目的區塊對應的虛擬區段處’再利用排序機制 SVST提供虛擬區段和邏輯區段的對應關係可使得讀取資料 時更加有效率。 以上所述僅為之較佳實施例而已,並非用以限定本發 明之申請專利範圍;凡其它未脫離本發明所揭示之精神下 所完成之等效改變或修飾,均應包含在下述之申請專利範 圍内。Page 20 1253564 V. Description of the Invention (14) The invention can write the logical sector data in the writing order at the beginning of the block, and then use the sorting mechanism SVST to provide the correspondence between the virtual segment and the logical segment. When the block to be written is blank, but the logical segment to be written is blank, the present invention can insert the logical segment data into the virtual segment corresponding to the destination block in the logical segment order. The reuse sorting mechanism SVST provides a correspondence between virtual segments and logical segments to make data reading more efficient. The above description is only for the preferred embodiment, and is not intended to limit the scope of the claims of the present invention; any other equivalent changes or modifications which are not departing from the spirit of the present invention should be included in the application below. Within the scope of the patent.
第21頁 1253564 圖式簡單說明 本發明的較佳實施例將於往後之說明文字中輔以下列圖形 做更詳細的闡述: 圖1顯示依據本發明設計之16位元的虛擬區塊實體區塊對 照表(V2P)。 圖2 A顯示依據本發明之快閃記憶體虛擬區段寫入邏輯區段 並非依邏輯區段號排列的示意圖。 圖2 B顯示依據本發明之排序機制表依邏輯區段號排列可找 出對應之虛擬區段的不意圖。 圖3顯示本發明實施例情況(1 )及(2 )時之流程圖。 圖4顯示本發明實施例情況(3)時之流程圖。 圖5顯示本發明實施例情況(4 )時之流程圖。 圖6顯示本發明實施例情況(5)時之流程圖。 圖號對照說明: 0、1、…D、E、F為16位元V2P表之格式 V. S. 虛擬區段 L. S. 邏輯區段 FSP 空區段指標 SVST排序機制 SRAM 靜態隨機存取記憶體 410至4 6 0為圖3之流程圖步驟 5 2 0至5 7 0為圖4之流程圖步驟 6 1 0至6 4 0為圖5之流程圖步驟 7 1 0至7 6 0為圖6之流程圖步驟Page 21 1253564 BRIEF DESCRIPTION OF THE DRAWINGS The preferred embodiment of the present invention will be explained in more detail in the following description with the following figures: Figure 1 shows a 16-bit virtual block physical area designed in accordance with the present invention. Block comparison table (V2P). Figure 2A shows a schematic diagram of flash memory virtual sector write logic segments not arranged according to logical sector numbers in accordance with the present invention. Figure 2B shows the intent of the sorting mechanism table according to the present invention to find the corresponding virtual segment by logical sector number arrangement. Fig. 3 is a flow chart showing the case (1) and (2) of the embodiment of the present invention. Fig. 4 is a flow chart showing the case (3) of the embodiment of the present invention. Fig. 5 is a flow chart showing the case (4) of the embodiment of the present invention. Fig. 6 is a flow chart showing the case (5) of the embodiment of the present invention. Figure number comparison description: 0, 1, ... D, E, F is 16-bit V2P table format VS virtual segment LS logical segment FSP empty segment index SVST sorting mechanism SRAM static random access memory 410 to 4 6 0 is the flow chart of FIG. 3, step 5 2 0 to 5 7 0 is the flow chart of FIG. 4, step 6 1 0 to 6 4 0 is the flow chart of FIG. 5, step 7 1 0 to 7 6 0 is the flow chart step of FIG.
第22頁 1253564 圖式簡單說明 N ’第一筆資料N寫入快閃記憶體標的區塊的起始區段(頁) M’第二筆資料Μ寫入快閃記憶體標的區塊的起始區段(頁) η 第一筆資料Ν共有η個區段 m 第二筆資料Ν共有m個區段Page 22 1253564 Schematic description N 'The first data N is written to the beginning of the block of the flash memory (page) M' second data Μ written to the block of the flash memory The beginning section (page) η The first data Ν There are η sections m The second data Ν There are m sections
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93119158A TWI253564B (en) | 2004-06-29 | 2004-06-29 | Method of efficient data management with flash storage system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93119158A TWI253564B (en) | 2004-06-29 | 2004-06-29 | Method of efficient data management with flash storage system |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200601044A TW200601044A (en) | 2006-01-01 |
TWI253564B true TWI253564B (en) | 2006-04-21 |
Family
ID=37586648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93119158A TWI253564B (en) | 2004-06-29 | 2004-06-29 | Method of efficient data management with flash storage system |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI253564B (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7890693B2 (en) | 2007-01-25 | 2011-02-15 | Genesys Logic, Inc. | Flash translation layer apparatus |
US8010770B2 (en) | 2006-12-27 | 2011-08-30 | Genesys Logic, Inc. | Caching device for NAND flash translation layer |
US8122184B2 (en) | 2007-01-17 | 2012-02-21 | Memoright Memoritech (Wuhan) Co., Ltd. | Methods for managing blocks in flash memories |
TWI460588B (en) * | 2009-07-17 | 2014-11-11 | Toshiba Kk | Memory management device and memory information processing device |
US9342446B2 (en) | 2011-03-29 | 2016-05-17 | SanDisk Technologies, Inc. | Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache |
US9748001B2 (en) | 2009-07-06 | 2017-08-29 | Sandisk Technologies Llc | Bad column management with bit information in non-volatile memory systems |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200945034A (en) * | 2008-04-25 | 2009-11-01 | Acute Technology Inc | Method and structure of memory usage for logic analyzer |
-
2004
- 2004-06-29 TW TW93119158A patent/TWI253564B/en active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8010770B2 (en) | 2006-12-27 | 2011-08-30 | Genesys Logic, Inc. | Caching device for NAND flash translation layer |
US8122184B2 (en) | 2007-01-17 | 2012-02-21 | Memoright Memoritech (Wuhan) Co., Ltd. | Methods for managing blocks in flash memories |
US7890693B2 (en) | 2007-01-25 | 2011-02-15 | Genesys Logic, Inc. | Flash translation layer apparatus |
US9748001B2 (en) | 2009-07-06 | 2017-08-29 | Sandisk Technologies Llc | Bad column management with bit information in non-volatile memory systems |
TWI460588B (en) * | 2009-07-17 | 2014-11-11 | Toshiba Kk | Memory management device and memory information processing device |
US9342446B2 (en) | 2011-03-29 | 2016-05-17 | SanDisk Technologies, Inc. | Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache |
Also Published As
Publication number | Publication date |
---|---|
TW200601044A (en) | 2006-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI358068B (en) | Writing method for non-volatile memory and control | |
TW201003391A (en) | Block management method and storage system and controller thereof | |
US9448919B1 (en) | Data storage device accessing garbage collected memory segments | |
TW200926183A (en) | Flash memory data writing method and controller using the same | |
JP2006216036A (en) | Data storage device including flash memory and its merging method | |
TW201005746A (en) | Memory storage device and control method thereof | |
TW201003392A (en) | Data accessing method for flash memory and storage system and controller using the same | |
TW200951979A (en) | Data writing method for flash memory and storage system and controller using the same | |
TW201122811A (en) | Flash memory storage system and controller and data writing method thereof | |
TW200945037A (en) | Data writing method, and flash storage system and controller using the same | |
CN105786412A (en) | Method of operating a non-volatile memory device | |
TWI597730B (en) | Data writing method, memory control circuit unit and memory storage apparatus | |
TW201007451A (en) | Block management method for flash memory and storage system and controller using the same | |
TWI785876B (en) | Mapping information recording method, memory control circuit unit and memory storage device | |
TWI584189B (en) | Memory controller, memory storage device, and method for writing data | |
TW201243593A (en) | Data writing method, memory controller and memory storage apparatus | |
TW201232557A (en) | Data writing method for a non-volatile memory module, memory controller and memory storage apparatus | |
CN112130749B (en) | Data storage device and non-volatile memory control method | |
TWI540428B (en) | Data writing method, memory controller and memory storage apparatus | |
TWI253564B (en) | Method of efficient data management with flash storage system | |
TW201015563A (en) | Block management and replacement method, flash memory storage system and controller using the same | |
TW201248404A (en) | Program code loading and accessing method, memory controller and memory storage apparatus | |
TW201039349A (en) | Data accessing method for flash memory and storage system and controller using the same | |
TW201120900A (en) | Method and control unit for performing storage management upon storage apparatus and related storage apparatus thereof | |
TW201122810A (en) | Block management and data writing method, flash memory storage system and controller |