JPS63183700A - Ｅｅｐｒｏｍアクセス方法 - Google Patents

Ｅｅｐｒｏｍアクセス方法

Info

Publication number
JPS63183700A
JPS63183700A JP62015703A JP1570387A JPS63183700A JP S63183700 A JPS63183700 A JP S63183700A JP 62015703 A JP62015703 A JP 62015703A JP 1570387 A JP1570387 A JP 1570387A JP S63183700 A JPS63183700 A JP S63183700A
Authority
JP
Japan
Prior art keywords
counter
data
write
eeprom
service life
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62015703A
Other languages
English (en)
Inventor
Kazuo Ishikawa
和男 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62015703A priority Critical patent/JPS63183700A/ja
Publication of JPS63183700A publication Critical patent/JPS63183700A/ja
Pending legal-status Critical Current

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  • Read Only Memory (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、情報処理装置、情報伝送装置等におけるＫ
ＦｉＰＲＯＭアクセス方法に関するものである。
〔従来のＰｉ術〕
第８図は、従来の１ｌｆｌ！！ＦＲＯＭアクセス方法を
示す図であり、ＫＫＦＲＯＭすべてがデータエリア（２
１で、データｌ、データ２−−−−データｍと各アドレ
スにそれぞれ内容の異るデータが書き込まれる。
次に動作について説明する〇 データの書き込み要求があれば、該当するアドレスに何
度でも、データを書き込んでいく。
〔発明が解決しようとする問題点〕
従来のＩＫＦＲＯＭアクセス方法は、以上のように構成
されているので、書き込み要求があれば同一アドレスに
何度でも暦き込む。
ＥＫＰＲＯＩｉ！は例えば日立ＩＣメモリデータブック
（８６１年８月発行）Ｐ５４５によると、同一アドレス
に書き込むことのできる回数が比較的短かく、消去／書
込み回数１万回となっている。このように−りのアドレ
スでこの回数をこえると、ＫＩＰＲＯＭ全体の身命とな
ってし筐う問題点があり、また、ｍ１ｌｌ：ＦＲＯＭの
身命を管理することば困難であった。
この発明は、上記のような問題点を解消するためになさ
れたもので、ＥＥＰＲＯＭの身命をのばすことのできる
ＦＸＥＩ！ｉＦＲＯＭアクセス方法である。
〔問題点ｔ［決するための手段〕
この発明に係るＥ］ｌ！ｉＰＲＯＭアクセス方法はデー
タを潜き込むアドレスと、そのアドレスへの書き込み回
数と全管理する各データエリアに対応したカウンタを備
えたものである。
〔作用〕
この発明によるＩＩＣＫＦＲＯＭ方法はＫＥＦＲＯＭ内
部のカウンタにより管理され、一つのカウンタで書き込
み回数が規定値をこえると、他の規定（＋ｍ　ｋこえな
いカウンタで暦き込みを行いすべてのカウンタが規定値
に達すると寿命予告信号を発生する。
〔発明の実施例〕
以下、この発明の一実施ｆＩｊについて説明する。
第１図においてＩｌ＋汀、データをどのエリアへ脅寺込
むべきか、父、そのエリアに何度貞き込んだか全管理す
るためのカウンタである。（２）ハ実際にデータを書き
込むべきデータエリアである。
データエリアｌからデータエリアｎまでの内部に格納さ
れるデータは、従来の方式でのデータ１からデータｍに
対応するものである。
第２図はこの動作の７０−チャートである。
次に動作について説明する。
イニシャアル処理として、第１図１１１のカウンタｌか
らカウンタｎまでに０をセットする。
書争込み要求があれば、データエリアｌにデータを書き
込み、カウンタ１の内容を＋１する。
この動作により、データヵクンタｌが規定回数までカウ
ントアップされた場合法の層き込み要求からは、カウン
タ２’＆ｆ用し、データエリア２にデータを書き込みカ
ウンタ２の内容ケ＋１する。この動作をｊ狛犬続けて、
カウンタｎが規定回数カウントされた時、このＴＤＺＰ
ＲＯ）Ａは寿命とみなして、外部へ出力し身命があるこ
とを知らせる。
また、カフ／り１−ｎの内任意のカウンタを＋１し、こ
のカウンタのアドレスに対応したデータエリアに書き込
みこのカウンタが規定回数に達したら、このカウンタ以
外のカウンタを使用ししすべてのカウンタが規定回数に
達したら寿命とみなして寿命予告の信号を発生するよう
にしてもよい、 〔発明の効果〕 以上のように、この発明によれば、データの沓き込み回
数ケカウンタにより管理し、潜き込むべきデータエリア
ケ次々と変えることによりＦｉｌｌＣＦＲＯＭの容量が
、従来の方式のｎ倍あれば身命をｎ倍のばすことができ
、管た、身命の外部出力が＝＝Ｉ能となる。
【図面の簡単な説明】
：９１図は、この発明の一実施ダｊＶＣよるＦ！ＰＰＲ
ＯＭの内部データ構造、第２図はこの発明の一実施例・
／）フローチャート、第８図は従来のＥＫＰＲＯＭアク
セス方法における、１ｉＫＰＲＯＭの内部データ構造で
ある。 ６図において、＋ＩＩｔｒｉ特定データエリアへのデー
タの書き込み回数？示すカウンタ、ｆ’２１ｆｌデータ
が書き込まれるエリアである。 なお、図中、同一符号は、同一、又は副当部分子示す。

Claims (1)

    【特許請求の範囲】
  1. 　ＥＥＰＲＯＭをアクセスする場合において、データを
    書き込むアドレスと、そのアドレスへの書き込み回数と
    を管理する各データエリアに対応したカウンタを備え、
    このカウンタで各アドレスの書き込み回数をカウントし
    、このカウント値が所定値に達すると、規定値に達した
    カウンタは書き込みを停止し、上記の全てのカウンタが
    上記規定値に達すると、寿命予告信号を発生するように
    したことを特徴とするＥＥＰＲＯＭアクセス方法。
JP62015703A 1987-01-26 1987-01-26 Ｅｅｐｒｏｍアクセス方法 Pending JPS63183700A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62015703A JPS63183700A (ja) 1987-01-26 1987-01-26 Ｅｅｐｒｏｍアクセス方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62015703A JPS63183700A (ja) 1987-01-26 1987-01-26 Ｅｅｐｒｏｍアクセス方法

Publications (1)

Publication Number Publication Date
JPS63183700A true JPS63183700A (ja) 1988-07-29

Family

ID=11896129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62015703A Pending JPS63183700A (ja) 1987-01-26 1987-01-26 Ｅｅｐｒｏｍアクセス方法

Country Status (1)

Country Link
JP (1) JPS63183700A (ja)

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5500742A (en) * 1992-06-12 1996-03-19 Ricoh Company, Ltd. Control unit of flash memory and facsimile machine using such control unit
US5544119A (en) * 1992-10-30 1996-08-06 Intel Corporation Method for assuring that an erase process for a memory array has been properly completed
US5544356A (en) * 1990-12-31 1996-08-06 Intel Corporation Block-erasable non-volatile semiconductor memory which tracks and stores the total number of write/erase cycles for each block
US5602987A (en) * 1989-04-13 1997-02-11 Sandisk Corporation Flash EEprom system
US5630093A (en) * 1990-12-31 1997-05-13 Intel Corporation Disk emulation for a non-volatile semiconductor memory utilizing a mapping table
US5765175A (en) * 1994-08-26 1998-06-09 Intel Corporation System and method for removing deleted entries in file systems based on write-once or erase-slowly media
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US5963480A (en) * 1988-06-08 1999-10-05 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6076137A (en) * 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6081447A (en) * 1991-09-13 2000-06-27 Western Digital Corporation Wear leveling techniques for flash EEPROM systems
US6115785A (en) * 1995-07-31 2000-09-05 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6125435A (en) * 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6172906B1 (en) 1995-07-31 2001-01-09 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6262918B1 (en) 1999-04-01 2001-07-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6374337B1 (en) 1998-11-17 2002-04-16 Lexar Media, Inc. Data pipelining method and apparatus for memory control circuit
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6462992B2 (en) 1989-04-13 2002-10-08 Sandisk Corporation Flash EEprom system
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US6681240B1 (en) * 1999-05-19 2004-01-20 International Business Machines Corporation Apparatus and method for specifying maximum interactive performance in a logical partition of a computer system independently from the maximum interactive performance in other partitions
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6813678B1 (en) 1998-01-22 2004-11-02 Lexar Media, Inc. Flash memory system
US6898662B2 (en) 2001-09-28 2005-05-24 Lexar Media, Inc. Memory system sectors
JP2006167437A (ja) * 2004-11-19 2006-06-29 Pentax Corp 電子内視鏡及び内視鏡装置
US7120729B2 (en) 2002-10-28 2006-10-10 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US8694722B2 (en) 2001-09-28 2014-04-08 Micron Technology, Inc. Memory systems
US9032134B2 (en) 2001-09-28 2015-05-12 Micron Technology, Inc. Methods of operating a memory system that include outputting a data pattern from a sector allocation table to a host if a logical sector is indicated as being erased
US9576154B2 (en) 2004-04-30 2017-02-21 Micron Technology, Inc. Methods of operating storage systems including using a key to determine whether a password can be changed

Cited By (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5712819A (en) * 1988-06-08 1998-01-27 Harari; Eliyahou Flash EEPROM system with storage of sector characteristic information within the sector
US5862081A (en) * 1988-06-08 1999-01-19 Harari; Eliyahou Multi-state flash EEPROM system with defect management including an error correction scheme
US5642312A (en) * 1988-06-08 1997-06-24 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5835415A (en) * 1988-06-08 1998-11-10 Harari; Eliyahou Flash EEPROM memory systems and methods of using them
US5544118A (en) * 1988-06-08 1996-08-06 Harari; Eliyahou Flash EEPROM system cell array with defect management including an error correction scheme
US5568439A (en) * 1988-06-08 1996-10-22 Harari; Eliyahou Flash EEPROM system which maintains individual memory block cycle counts
US5583812A (en) * 1988-06-08 1996-12-10 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5434825A (en) * 1988-06-08 1995-07-18 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5909390A (en) * 1988-06-08 1999-06-01 Harari; Eliyahou Techniques of programming and erasing an array of multi-state flash EEPROM cells including comparing the states of the cells to desired values
US5963480A (en) * 1988-06-08 1999-10-05 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
US5602987A (en) * 1989-04-13 1997-02-11 Sandisk Corporation Flash EEprom system
US7460399B1 (en) 1989-04-13 2008-12-02 Sandisk Corporation Flash EEprom system
US5719808A (en) * 1989-04-13 1998-02-17 Sandisk Corporation Flash EEPROM system
US5999446A (en) * 1989-04-13 1999-12-07 Sandisk Corporation Multi-state flash EEprom system with selective multi-sector erase
US5936971A (en) * 1989-04-13 1999-08-10 Sandisk Corporation Multi-state flash EEprom system with cache memory
US6462992B2 (en) 1989-04-13 2002-10-08 Sandisk Corporation Flash EEprom system
US6373747B1 (en) 1989-04-13 2002-04-16 Sandisk Corporation Flash EEprom system
US5592669A (en) * 1990-12-31 1997-01-07 Intel Corporation File structure for a non-volatile block-erasable semiconductor flash memory
US5544356A (en) * 1990-12-31 1996-08-06 Intel Corporation Block-erasable non-volatile semiconductor memory which tracks and stores the total number of write/erase cycles for each block
US5630093A (en) * 1990-12-31 1997-05-13 Intel Corporation Disk emulation for a non-volatile semiconductor memory utilizing a mapping table
US7353325B2 (en) 1991-09-13 2008-04-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6850443B2 (en) 1991-09-13 2005-02-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6594183B1 (en) 1991-09-13 2003-07-15 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6081447A (en) * 1991-09-13 2000-06-27 Western Digital Corporation Wear leveling techniques for flash EEPROM systems
US5500742A (en) * 1992-06-12 1996-03-19 Ricoh Company, Ltd. Control unit of flash memory and facsimile machine using such control unit
US5544119A (en) * 1992-10-30 1996-08-06 Intel Corporation Method for assuring that an erase process for a memory array has been properly completed
US5765175A (en) * 1994-08-26 1998-06-09 Intel Corporation System and method for removing deleted entries in file systems based on write-once or erase-slowly media
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6912618B2 (en) 1995-07-31 2005-06-28 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6128695A (en) * 1995-07-31 2000-10-03 Lexar Media, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US6145051A (en) * 1995-07-31 2000-11-07 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US6172906B1 (en) 1995-07-31 2001-01-09 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6223308B1 (en) 1995-07-31 2001-04-24 Lexar Media, Inc. Identification and verification of a sector within a block of mass STO rage flash memory
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6393513B2 (en) 1995-07-31 2002-05-21 Lexar Media, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6115785A (en) * 1995-07-31 2000-09-05 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6125435A (en) * 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6587382B1 (en) 1997-03-31 2003-07-01 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6076137A (en) * 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6327639B1 (en) 1997-12-11 2001-12-04 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6813678B1 (en) 1998-01-22 2004-11-02 Lexar Media, Inc. Flash memory system
US6374337B1 (en) 1998-11-17 2002-04-16 Lexar Media, Inc. Data pipelining method and apparatus for memory control circuit
US6262918B1 (en) 1999-04-01 2001-07-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6134151A (en) * 1999-04-01 2000-10-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6681240B1 (en) * 1999-05-19 2004-01-20 International Business Machines Corporation Apparatus and method for specifying maximum interactive performance in a logical partition of a computer system independently from the maximum interactive performance in other partitions
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US6898662B2 (en) 2001-09-28 2005-05-24 Lexar Media, Inc. Memory system sectors
US8694722B2 (en) 2001-09-28 2014-04-08 Micron Technology, Inc. Memory systems
US9032134B2 (en) 2001-09-28 2015-05-12 Micron Technology, Inc. Methods of operating a memory system that include outputting a data pattern from a sector allocation table to a host if a logical sector is indicated as being erased
US7120729B2 (en) 2002-10-28 2006-10-10 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US9576154B2 (en) 2004-04-30 2017-02-21 Micron Technology, Inc. Methods of operating storage systems including using a key to determine whether a password can be changed
US10049207B2 (en) 2004-04-30 2018-08-14 Micron Technology, Inc. Methods of operating storage systems including encrypting a key salt
JP2006167437A (ja) * 2004-11-19 2006-06-29 Pentax Corp 電子内視鏡及び内視鏡装置

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