CN207183227U - 清洗装置 - Google Patents
清洗装置 Download PDFInfo
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- CN207183227U CN207183227U CN201721149835.9U CN201721149835U CN207183227U CN 207183227 U CN207183227 U CN 207183227U CN 201721149835 U CN201721149835 U CN 201721149835U CN 207183227 U CN207183227 U CN 207183227U
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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Abstract
一种清洗装置,包括一流体供应模块及一防漏模块。该流体供应模块包括一开口,该开口用以提供一流体来清洗一基板。防漏模块则设于该流体供应模块的一侧。该防漏模块包括一本体、一驱动件及一防漏件。该驱动件及该防漏件设置于该本体,该防漏件包括一容置部,且该驱动件驱使该防漏件移动至该开口,并使该容置部位于该开口处。
Description
技术领域
本实用新型关于一种清洗装置,特别是一种用于清洗基板的清洗装置。
背景技术
在半导体工艺中,会有各式附着物附着在基板上,例如晶圆湿式处理工艺中,于晶圆表面附着化学残液。因此,在晶圆处理工艺完成后,会经由清洗设备的喷嘴喷洒清洁液来清洗晶圆表面。然而,晶圆在完成上述洗净作业之后,即使停止了清洁液的喷洒作业,喷嘴内仍会残留部分清洁液。值得一提的是,喷嘴内的残留液容易向下滴落至晶圆表面,造成晶圆污染。
实用新型内容
本实用新型的主要目的在于提供一种清洗装置,其可解决清洁液在清洗作业完成后滴落至清洗对象而造成清洗对象污染的问题。
为达成上述的目的,本实用新型提供一种清洗装置,其包括一流体供应模块及一防漏模块。该流体供应模块包括一开口,该开口用以提供一流体来清洗一基板。防漏模块则设于该流体供应模块的一侧。该防漏模块包括一本体、一驱动件及一防漏件。该驱动件及该防漏件设置于该本体,该防漏件包括一容置部,且该驱动件驱使该防漏件移动至该开口,并使该容置部位于该开口处。
在本实用新型中,该驱动件包括一第一气体供应管,以藉由喷出一第一气体来驱使该防漏件移动。
在本实用新型中,该第一气体供应管喷出该第一气体至该基板的表面,以干燥该基板。
在本实用新型中,该防漏件包括一集气槽,而该第一气体喷出至该集气槽而驱使该防漏件移动。
在本实用新型中,该清洗装置更包括一第二气体供应管,以藉由喷出一第二气体至该基板的表面来干燥该基板。
在本实用新型中,该第一气体及该第二气体喷出至该基板的表面,以干燥该基板。
在本实用新型中,该驱动件包括一气压伸缩件,该气压伸缩件包括一顶杆,而该顶杆通过一气压来移动而推动该防漏件。
在本实用新型中,该驱动件包括一磁力驱动组,该磁力驱动组包括一第一磁体及一第二磁体,该第一磁体及该第二磁体至少其中之一为一电磁体,且该第一磁体及该第二磁体分别设于该本体与该防漏件相对应的一侧。
在本实用新型中,该驱动件包括一马达、一从动件及一皮带,该马达设于该本体,该防漏件通过该从动件枢设于该本体,该皮带环绕该马达及该从动件,而该马达经该皮带带动该从动件转动,并驱动该防漏件移动。
在本实用新型中,该驱动件包括一马达及一从动件,该马达设于该本体且包括一第一齿轮,该防漏件通过该从动件枢设于该本体,该从动件包括一第二齿轮,该第一齿轮与该第二齿轮相互接触且转动,并驱动该防漏件移动。
在本实用新型中,该清洗装置更包括一抵靠件,该抵靠件设置于该本体,且该抵靠件位于该防漏件的动作路径,以限制该防漏件的移动范围。
在本实用新型中,该防漏件经一转轴枢设于该本体,该防漏件受到该驱动件驱使后会通过该转轴转动而使该容置部移动至该开口,当该防漏件不再受到该驱动件驱使,该防漏件的该容置部通过一重心偏移而远离该开口。
在本实用新型中,该流体供应模块更包括一第三气体供应管,该第三气体供应管与该流体供应模块连接,该第三气体供应管提供一第三气体,以与该流体混合而产生水雾来清洗该基板。
附图说明
图1绘示本实用新型一实施例的清洗装置于一第一状态的示意图。
图2绘示图1的清洗装置于一第二状态的示意图。
图3绘示本实用新型另一实施例的清洗装置的示意图。
图4绘示本实用新型再一实施例的清洗装置的示意图。
图5绘示本实用新型又一实施例的清洗装置的示意图。
图6绘示本实用新型再一实施例的清洗装置的示意图。
其中,附图标记
100、100’、100’’、100’’’、100’’’’:清洗装置
110:流体供应模块
112:开口
114:第三气体供应管
120:防漏模块
122:本体
124、124d:驱动件
124a:第一气体供应管
124b:气压伸缩件
124c:磁力驱动组
126:防漏件
126a:容置部
126b:集气槽
128:转轴
130:第二气体供应管
140:抵靠件
150:溶液吸收件
31:顶杆
41:第一磁体
42:第二磁体
51:马达
52:从动件
53:皮带
具体实施方式
为能让贵审查委员能更了解本实用新型的技术内容,特举较佳具体实施例说明如下。
图1绘示本实用新型一实施例的清洗装置于一第一状态的示意图。图2绘示图1的清洗装置于一第二状态的示意图。请同时参考图1及图2,本实施例的清洗装置100包括一流体供应模块110及一防漏模块120。本实施例的流体供应模块110包括一开口112,开口112用以提供一流体来清洗一基板(未绘出)。在本实施例中,该基板例如是一晶圆或是一玻璃基板,而该流体例如是用来洁净晶圆表面的水或清洁溶液。在一较佳实施例中,流体供应模块110还可包括一第三气体供应管114,该第三气体供应管114与流体供应模块110连接,第三气体供应管114用以提供一第三气体。第三气体可与流体混合而产生水雾来清洗基板。此外,本实施例的防漏模块120则是设于流体供应模块110的一侧。
承上所述,本实施例的防漏模块120包括一本体122、一驱动件124及一防漏件126。其中,驱动件124及防漏件126是设置于本体122,而防漏件126包括一容置部126a。值得一提的是,在本实施例中,驱动件124可驱使防漏件126移动至开口112,并使容置部126a位于开口112处。其中,图1的清洗装置100是容置部126a尚未移动至开口112的状态,而图2的清洗装置100是容置部126a已移动至开口112的状态。在一较佳实施例中,容置部126a移动至开口112处后,例如可以罩覆开口112,以达到较佳的防漏效果。
如此一来,在流体供应模块110停止供应例如是清洁溶液的流体之后,可以将防漏件126的容置部126a移动至开口112下方,使容置部126a和开口112彼此间隔一预设距离,或是容置部126a罩覆开口112,使开口112完全被容置部126a封闭喷口,以避免残留在流体供应模块110内或是其他流体供应管中的流体滴落至位于开口112下方的基板。换言之,经由清洗装置100清洗的基板有较佳的洁净度,本实施例的清洗装置100相较于传统的清洗装置即有较佳的清洁效能。在一实施例中,容置部126a内还可以设置一溶液吸收件150,溶液吸收件150例如是一海绵,其可以有效吸附容置部126a所承接的流体,避免容置部126a内的该流体又滴落至晶圆上。
在本实施例中,驱动件124为一第一气体供应管124a。其中,第一气体供应管124a可以喷出一第一气体来驱使防漏件126移动。进一步地说,本实施例的防漏件126例如是一偏心体,其经一转轴128枢设于本体122。因此,防漏件126受到驱动件124驱使后会通过转轴128转动,进而让容置部126a移动至开口112下方,或是进一步罩覆开口112。
此外,为能有效控制防漏件126的转动范围,本实施例的清洗装置100还可以包括一抵靠件140,抵靠件140设置于本体122,且抵靠件140例如是位于防漏件126的移动或转动路径。因此,当第一气体供应管124a喷出第一气体来驱使防漏件126移动或转动时,防漏件126在移动一预定范围或预定角度后即会受到抵靠件140的限制而无法继续作动。而同时,容置部126a移动至开口112处或是罩覆于开口112。
承上所述,为让第一气体供应管124a所喷出第一气体能更有效地驱动防漏件126作动,可以在防漏件126靠近第一气体供应管124a的一侧设置一集气槽126b,而该第一气体可喷出至该集气槽126b而驱使该防漏件126移动。
此外,由于本实施例的防漏件126例如是一偏心体,因此当防漏件126不再受到驱动件124驱使时,防漏件126的容置部126a即会通过一重心偏移而远离开口112,并回复到其初始位置。而防漏件126同样可以藉由适当的复位组件的辅助以在不受驱动件124驱使时回复到其初始位置。在本实用新型中,容置部126a的结构形状为一凹槽状或一平板状。本实用新型仅以两种容置部的形状作为举例,只要容置部126a形状可承接由开口112滴漏出来的流体即可,不以本案的举例为限。
在本实施例中,第一气体供应管124a所喷出的第一气体除了可以驱动防漏件126作动之外,第一气体供应管124a所喷出的第一气体亦可以喷至基板的表面,以在基板经过清洗作业之后,再对该基板进行干燥作业。其中,该第一气体供应管124a例如是经设计而可以让第一气体同时供应至防漏件126和基板表面。
在本实施例中,清洗装置100还可以包括一可喷出一第二气体的第二气体供应管130。同样地,第二气体供应管130亦可以藉由喷出第二气体至基板的表面来干燥基板。当然,在一较佳实施例中,可以同时应用第一气体供应管124a及第二气体供应管130来同时喷出气体,第一气体供应至防漏件126,第二气体供应至基板的表面来干燥基板。在一实施例中,可以第一气体及第二气体均可喷出至基板的表面,以加速该基板的干燥作业。
图3绘示本实用新型另一实施例的清洗装置的示意图。在本实施例中,清洗装置100’与上述清洗装置100相似,惟二者的差异在于:本实施例的驱动件124是应用一气压伸缩件124b来实现。进一步地说,本实施例的气压伸缩件124b包括一顶杆31,而顶杆31例如是滑设于一气缸中,进而通过一气压来推动防漏件126作动。同样地,在气压伸缩件124b推动防漏件126之后,防漏件126可移动至开口112处或是远离开口112处。当然,容置部126a亦可进一步罩覆开口112。本实施例仅以上述气压伸缩件结构作为举例,只要是通过气压来作动的装置即可,不以此为限。
图4绘示本实用新型再一实施例的清洗装置的示意图。在本实施例中,清洗装置100”与上述清洗装置100相似,惟二者的差异在于:本实施例的驱动件124是应用一磁力驱动组124c来实现。详细地说,本实施例的磁力驱动组124c包括一第一磁体41及一第二磁体42,第一磁体41及第二磁体42至少其中之一为一电磁体。其中,第一磁体41及第二磁体42分别设于本体122与防漏件126相对应的一侧,例如为本体122与防漏件126彼此靠近的一侧。如此一来,本实施例可以藉由控制电磁体的磁性,以让第一磁体41及第二磁体42的极性相同或是相异,进而让第一磁体41及第二磁体42之间有相斥或是相吸的作用力。
进一步地说,当第一磁体41及第二磁体42的极性相异时,第一磁体41及第二磁体42之间即有相吸的作用力,因此第二磁体42所配置的防漏件126往本体122方向移动而使容置部126a远离开口112。相反地,当第一磁体41及第二磁体42的极性相同时,第一磁体41及第二磁体42之间即有相斥的作用力,因此第二磁体42所配置的防漏件126即会受到该相斥力作用而朝向远离第一磁体41的方向转动,进而让防漏件126转动至开口112处。当然,亦可使容置部126a进一步罩覆开口112。
图5绘示本实用新型又一实施例的清洗装置的示意图。在本实施例中,清洗装置100”’与上述清洗装置100相似,惟二者的差异在于:本实施例的驱动件124d是应用一马达51、一从动件52及一皮带53来实现。详细地说,在本实施例中,马达51设于本体122,防漏件126通过从动件52枢设于本体122,皮带53环绕马达51及从动件52,而马达51经皮带53带动从动件52转动,连带地驱动防漏件126移动,进而让防漏件126转动至开口112处或是远离开口112处。当然,亦可让容置部126a进一步罩覆开口112。图6绘示本实用新型再一实施例的清洗装置的示意图。在本一实施例中,清洗装置100””与上述清洗装置100”’相似,驱动件124d是应用一马达51以及一从动件52来实现。详细地说,在本实施例中,马达51设于本体122且包括一第一齿轮,防漏件126通过从动件52枢设于本体122,从动件52包括一第二齿轮,第一齿轮与第二齿轮相互接触且由第一齿轮带动第二齿轮转动,连带地驱动防漏件126移动,进而让防漏件126转动至开口112处或是远离开口112处。
综上所述,本实用新型于清洗装置中设置一防漏模块,并藉由各式的驱动方式来让防漏模块移动至流体供应模块的开口处。如此一来,在流体供应模块停止供应例如是清洁溶液的流体之后,残留在开口内或是其他流体供应管中的流体即会被容置或收集在防漏件的容置部中,避免滴落至位于开口下方的基板。当然,亦可让容置部进一步罩覆开口,以达到较佳的防漏效果。亦即,经本实用新型的清洗装置清洗的基板有较佳的洁净度,进而具有较佳的清洁效能。
需注意的是,上述仅为实施例,而非限制于实施例。譬如此不脱离本实用新型基本架构者,皆应为本专利所主张的权利范围,而应以专利申请范围为准。
Claims (13)
1.一种清洗装置,其特征在于,包括:
一流体供应模块,包括一开口,以提供一流体来清洗一基板;以及
一防漏模块,设于该流体供应模块的一侧,该防漏模块包括一本体、一驱动件及一防漏件,该驱动件及该防漏件设置于该本体,该防漏件包括一容置部,且该驱动件驱使该防漏件移动至该开口,并使该容置部位于该开口处。
2.如权利要求1所述的清洗装置,其特征在于,该驱动件包括一第一气体供应管,以藉由喷出一第一气体来驱使该防漏件移动。
3.如权利要求2所述的清洗装置,其特征在于,该第一气体供应管喷出该第一气体至该基板的表面,以干燥该基板。
4.如权利要求2所述的清洗装置,其特征在于,该防漏件包括一集气槽,而该第一气体喷出至该集气槽而驱使该防漏件移动。
5.如权利要求2所述的清洗装置,其特征在于,更包括一第二气体供应管,以藉由喷出一第二气体至该基板的表面来干燥该基板。
6.如权利要求5所述的清洗装置,其特征在于,该第一气体及该第二气体喷出至该基板的表面,以干燥该基板。
7.如权利要求1所述的清洗装置,其特征在于,该驱动件包括一气压伸缩件,该气压伸缩件包括一顶杆,而该顶杆通过一气压来移动而推动该防漏件。
8.如权利要求1所述的清洗装置,其特征在于,该驱动件包括一磁力驱动组,该磁力驱动组包括一第一磁体及一第二磁体,该第一磁体及该第二磁体至少其中之一为一电磁体,且该第一磁体及该第二磁体分别设于该本体与该防漏件相对应的一侧。
9.如权利要求1所述的清洗装置,其特征在于,该驱动件包括一马达、一从动件及一皮带,该马达设于该本体,该防漏件通过该从动件枢设于该本体,该皮带环绕该马达及该从动件,而该马达经该皮带带动该从动件转动,并驱动该防漏件移动。
10.如权利要求1所述的清洗装置,其特征在于,该驱动件包括一马达及一从动件,该马达设于该本体且包括一第一齿轮,该防漏件通过该从动件枢设于该本体,该从动件包括一第二齿轮,该第一齿轮与该第二齿轮相互接触且转动,并驱动该防漏件移动。
11.如权利要求1所述的清洗装置,其特征在于,更包括一抵靠件,该抵靠件设置于该本体,且该抵靠件位于该防漏件的动作路径,以限制该防漏件的移动范围。
12.如权利要求1所述的清洗装置,其特征在于,该防漏件经一转轴枢设于该本体,该防漏件受到该驱动件驱使后会通过该转轴转动而使该容置部移动至该开口,当该防漏件不再受到该驱动件驱使,该防漏件的该容置部通过一重心偏移而远离该开口。
13.如权利要求1所述的清洗装置,其特征在于,该流体供应模块更包括一第三气体供应管,该第三气体供应管与该流体供应模块连接,该第三气体供应管提供一第三气体,以与该流体混合而产生水雾来清洗该基板。
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TWM529937U (zh) * | 2016-07-12 | 2016-10-01 | 吳振維 | 吸附裝置 |
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