TWM553231U - 清洗裝置 - Google Patents
清洗裝置 Download PDFInfo
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- TWM553231U TWM553231U TW106208016U TW106208016U TWM553231U TW M553231 U TWM553231 U TW M553231U TW 106208016 U TW106208016 U TW 106208016U TW 106208016 U TW106208016 U TW 106208016U TW M553231 U TWM553231 U TW M553231U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Level Indicators Using A Float (AREA)
- Weting (AREA)
Description
本新型係關於一種清洗裝置,特別是一種用於清洗基板的清洗裝置。
在半導體製程中,會有各式附著物附著在基板上,例如晶圓濕式處理製程中,於晶圓表面附著化學殘液。因此,在晶圓處理製程完成後,會經由清洗設備的噴嘴噴灑清潔液來清洗晶圓表面。然而,晶圓在完成上述洗淨作業之後,即使停止了清潔液的噴灑作業,噴嘴內仍會殘留部分清潔液。值得一提的是,噴嘴內的殘留液容易向下滴落至晶圓表面,造成晶圓汙染。
本新型之主要目的係在提供一種清洗裝置,其可解決清潔液在清洗作業完成後滴落至清洗物件而造成清洗物件污染的問題。
為達成上述之目的,本新型提供一種清洗裝置,其包括一流體供應模組及一防漏模組。該流體供應模組包括一開口,該開口用以提供一流體來清洗一基板。防漏模組則設於該流體供應模組的一側。該防漏模組包括一本體、一驅動件及一防漏件。該驅動件及該防漏件設置於該本體,該防漏件包括一容置部,且該驅動件驅使該防漏件移動至該開口,並使該容置部位於該開口處。
在本新型中,該驅動件包括一第一氣體供應管,以藉由噴出一第一氣體來驅使該防漏件移動。
在本新型中,該第一氣體供應管噴出該第一氣體至該基板的表面,以乾燥該基板。
在本新型中,該防漏件包括一集氣槽,而該第一氣體噴出至該集氣槽而驅使該防漏件移動。
在本新型中,該清洗裝置更包括一第二氣體供應管,以藉由噴出一第二氣體至該基板的表面來乾燥該基板。
在本新型中,該第一氣體及該第二氣體噴出至該基板的表面,以乾燥該基板。
在本新型中,該驅動件包括一氣壓伸縮件,該氣壓伸縮件包括一頂桿,而該頂桿透過一氣壓來移動而推動該防漏件。
在本新型中,該驅動件包括一磁力驅動組,該磁力驅動組包括一第一磁體及一第二磁體,該第一磁體及該第二磁體至少其中之一為一電磁體,且該第一磁體及該第二磁體分別設於該本體與該防漏件相對應的一側。
在本新型中,該驅動件包括一馬達、一從動件及一皮帶,該馬達設於該本體,該防漏件透過該從動件樞設於該本體,該皮帶環繞該馬達及該從動件,而該馬達經該皮帶帶動該從動件轉動,並驅動該防漏件移動。
在本新型中,該驅動件包括一馬達及一從動件,該馬達設於該本體且包括一第一齒輪,該防漏件透過該從動件樞設於該本體,該從動件包括一第二齒輪,該第一齒輪與該第二齒輪相互接觸且轉動,並驅動該防漏件移動。
在本新型中,該清洗裝置更包括一抵靠件,該抵靠件設置於該本體,且該抵靠件位於該防漏件的移動路徑,以限制該防漏件的移動範圍。
在本新型中,該防漏件經一轉軸樞設於該本體,該防漏件受到該驅動件驅使後會透過該轉軸轉動而使該容置部移動至該開口,當該防漏件不再受到該驅動件驅使,該防漏件的該容置部透過一重心偏移而遠離該開口。
在本新型中,該流體供應模組更包括一第三氣體供應管,該第三氣體供應管與該流體供應模組連接,該第三氣體供應管提供一第三氣體,以與該流體混合而產生水霧來清洗該基板。
為能讓 貴審查委員能更瞭解本新型之技術內容,特舉較佳具體實施例說明如下。
圖1繪示本新型一實施例之清洗裝置於一第一狀態的示意圖。圖2繪示圖1之清洗裝置於一第二狀態的示意圖。請同時參考圖1及圖2,本實施例的清洗裝置100包括一流體供應模組110及一防漏模組120。本實施例的流體供應模組110包括一開口112,開口112係用以提供一流體來清洗一基板(未繪出)。在本實施例中,該基板例如是一晶圓或是一玻璃基板,而該流體例如是用來潔淨晶圓表面的水或清潔溶液。在一較佳實施例中,流體供應模組110還可包括一第三氣體供應管114,該第三氣體供應管114與流體供應模組110連接,第三氣體供應管114用以提供一第三氣體。第三氣體可與流體混合而產生水霧來清洗基板。此外,本實施例的防漏模組120則是設於流體供應模組110的一側。
承上所述,本實施例的防漏模組120包括一本體122、一驅動件124及一防漏件126。其中,驅動件124及防漏件126是設置於本體122,而防漏件126係包括一容置部126a。值得一提的是,在本實施例中,驅動件124係可驅使防漏件126移動至開口112,並使容置部126a位於開口112處。其中,圖1之清洗裝置100是容置部126a尚未移動至開口112的狀態,而圖2之清洗裝置100是容置部126a已移動至開口112的狀態。在一較佳實施例中,容置部126a移動至開口112處後,例如可以罩覆開口112,以達到較佳的防漏效果。
如此一來,在流體供應模組110停止供應例如是清潔溶液的流體之後,可以將防漏件126的容置部126a移動至開口112下方,使容置部126a和開口112彼此間隔一預設距離,或是容置部126a罩覆開口112,使開口112完全被容置部126a封閉噴口,以避免殘留在流體供應模組110內或是其他流體供應管中的流體滴落至位於開口112下方的基板。換言之,經由清洗裝置100清洗的基板有較佳的潔淨度,本實施例的清洗裝置100相較於傳統的清洗裝置即有較佳的清潔效能。在一實施例中,容置部126a內還可以設置一溶液吸收件150,溶液吸收件150例如是一海綿,其可以有效吸附容置部126a所承接的流體,避免容置部126a內的該流體又滴落至晶圓上。
在本實施例中,驅動件124為一第一氣體供應管124a。其中,第一氣體供應管124a可以噴出一第一氣體來驅使防漏件126移動。進一步地說,本實施例的防漏件126例如是一偏心體,其係經一轉軸128樞設於本體122。因此,防漏件126受到驅動件124驅使後會透過轉軸128轉動,進而讓容置部126a移動至開口112下方,或是進一步罩覆開口112。
此外,為能有效控制防漏件126的轉動範圍,本實施例的清洗裝置100還可以包括一抵靠件140,抵靠件140係設置於本體122,且抵靠件140例如是位於防漏件126的移動或轉動路徑。因此,當第一氣體供應管124a噴出第一氣體來驅使防漏件126移動或轉動時,防漏件126在移動一預定範圍或預定角度後即會受到抵靠件140的限制而無法繼續作動。而同時,容置部126a係移動至開口112處或是罩覆於開口112。
承上所述,為讓第一氣體供應管124a所噴出第一氣體能更有效地驅動防漏件126作動,可以在防漏件126靠近第一氣體供應管124a的一側設置一集氣槽126b,而該第一氣體可噴出至該集氣槽126b而驅使該防漏件126移動。
此外,由於本實施例的防漏件126例如是一偏心體,因此當防漏件126不再受到驅動件124驅使時,防漏件126的容置部126a即會透過一重心偏移而遠離開口112,並回復到其初始位置。而防漏件126同樣可以藉由適當的復位元件的輔助以在不受驅動件124驅使時回復到其初始位置。在本新型中,容置部126a之結構形狀為一凹槽狀或一平板狀。本新型僅以兩種容置部的形狀作為舉例,只要容置部126a形狀可承接由開口112滴漏出來的流體即可,不以本案之舉例為限。
在本實施例中,第一氣體供應管124a所噴出的第一氣體除了可以驅動防漏件126作動之外,第一氣體供應管124a所噴出的第一氣體亦可以噴至基板的表面,以在基板經過清洗作業之後,再對該基板進行乾燥作業。其中,該第一氣體供應管124a例如是經設計而可以讓第一氣體同時供應至防漏件126和基板表面。
在本實施例中,清洗裝置100還可以包括一可噴出一第二氣體的第二氣體供應管130。同樣地,第二氣體供應管130亦可以藉由噴出第二氣體至基板的表面來乾燥基板。當然,在一較佳實施例中,可以同時應用第一氣體供應管124a及第二氣體供應管130來同時噴出氣體,第一氣體供應至防漏件126,第二氣體供應至基板的表面來乾燥基板。在一實施例中,可以第一氣體及第二氣體均可噴出至基板的表面,以加速該基板的乾燥作業。
圖3繪示本新型另一實施例之清洗裝置的示意圖。在本實施例中,清洗裝置100’與上述清洗裝置100相似,惟二者的差異在於:本實施例的驅動件124是應用一氣壓伸縮件124b來實現。進一步地說,本實施例的氣壓伸縮件124b包括一頂桿31,而頂桿31例如是滑設於一氣缸中,進而透過一氣壓來推動防漏件126作動。同樣地,在氣壓伸縮件124b推動防漏件126之後,防漏件126可移動至開口112處或是遠離開口112處。當然,容置部126a亦可進一步罩覆開口112。本實施例僅以上述氣壓伸縮件結構作為舉例,只要是透過氣壓來作動的裝置即可,不以此為限。
圖4繪示本新型再一實施例之清洗裝置的示意圖。在本實施例中,清洗裝置100’’與上述清洗裝置100相似,惟二者的差異在於:本實施例的驅動件124是應用一磁力驅動組124c來實現。詳細地說,本實施例的磁力驅動組124c包括一第一磁體41及一第二磁體42,第一磁體41及第二磁體42至少其中之一為一電磁體。其中,第一磁體41及第二磁體42分別設於本體122與防漏件126相對應的一側,例如為本體122與防漏件126彼此靠近的一側。如此一來,本實施例可以藉由控制電磁體的磁性,以讓第一磁體41及第二磁體42的極性相同或是相異,進而讓第一磁體41及第二磁體42之間有相斥或是相吸的作用力。
進一步地說,當第一磁體41及第二磁體42的極性相異時,第一磁體41及第二磁體42之間即有相吸的作用力,因此第二磁體42所配置的防漏件126往本體122方向移動而使容置部126a遠離開口112。相反地,當第一磁體41及第二磁體42的極性相同時,第一磁體41及第二磁體42之間即有相斥的作用力,因此第二磁體42所配置的防漏件126即會受到該相斥力作用而朝向遠離第一磁體41的方向轉動,進而讓防漏件126轉動至開口112處。當然,亦可使容置部126a進一步罩覆開口112。
圖5繪示本新型又一實施例之清洗裝置的示意圖。在本實施例中,清洗裝置100’’’與上述清洗裝置100相似,惟二者的差異在於:本實施例的驅動件124d是應用一馬達51、一從動件52及一皮帶53來實現。詳細地說,在本實施例中,馬達51設於本體122,防漏件126透過從動件52樞設於本體122,皮帶53環繞馬達51及從動件52,而馬達51經皮帶53帶動從動件52轉動,連帶地驅動防漏件126移動,進而讓防漏件126轉動至開口112處或是遠離開口112處。當然,亦可讓容置部126a進一步罩覆開口112。圖6繪示本新型再一實施例之清洗裝置的示意圖。在本一實施例中,清洗裝置100’’’’與上述清洗裝置100’’’相似,驅動件124d是應用一馬達51以及一從動件52來實現。詳細地說,在本實施例中,馬達51設於本體122且包括一第一齒輪,防漏件126透過從動件52樞設於本體122,從動件52包括一第二齒輪,第一齒輪與第二齒輪相互接觸且由第一齒輪帶動第二齒輪轉動,連帶地驅動防漏件126移動,進而讓防漏件126轉動至開口112處或是遠離開口112處。
綜上所述,本新型係於清洗裝置中設置一防漏模組,並藉由各式的驅動方式來讓防漏模組移動至流體供應模組的開口處。如此一來,在流體供應模組停止供應例如是清潔溶液的流體之後,殘留在開口內或是其他流體供應管中的流體即會被容置或收集在防漏件的容置部中,避免滴落至位於開口下方的基板。當然,亦可讓容置部進一步罩覆開口,以達到較佳的防漏效果。亦即,經本新型之清洗裝置清洗的基板有較佳的潔淨度,進而具有較佳的清潔效能。
需注意的是,上述僅為實施例,而非限制於實施例。譬如 此不脫離本新型基本架構者,皆應為本專利所主張之權利範圍,而應以專利申請範圍為準。
100、100’、100’’、100’’’、100’’’’‧‧‧清洗裝置
110‧‧‧流體供應模組
112‧‧‧開口
114‧‧‧第三氣體供應管
120‧‧‧防漏模組
122‧‧‧本體
124、124d‧‧‧驅動件
124a‧‧‧第一氣體供應管
124b‧‧‧氣壓伸縮件
124c‧‧‧磁力驅動組
126‧‧‧防漏件
126a‧‧‧容置部
126b‧‧‧集氣槽
128‧‧‧轉軸
130‧‧‧第二氣體供應管
140‧‧‧抵靠件
150‧‧‧溶液吸收件
31‧‧‧頂桿
41‧‧‧第一磁體
42‧‧‧第二磁體
51‧‧‧馬達
52‧‧‧從動件
53‧‧‧皮帶
110‧‧‧流體供應模組
112‧‧‧開口
114‧‧‧第三氣體供應管
120‧‧‧防漏模組
122‧‧‧本體
124、124d‧‧‧驅動件
124a‧‧‧第一氣體供應管
124b‧‧‧氣壓伸縮件
124c‧‧‧磁力驅動組
126‧‧‧防漏件
126a‧‧‧容置部
126b‧‧‧集氣槽
128‧‧‧轉軸
130‧‧‧第二氣體供應管
140‧‧‧抵靠件
150‧‧‧溶液吸收件
31‧‧‧頂桿
41‧‧‧第一磁體
42‧‧‧第二磁體
51‧‧‧馬達
52‧‧‧從動件
53‧‧‧皮帶
圖1繪示本新型一實施例之清洗裝置於一第一狀態的示意圖。 圖2繪示圖1之清洗裝置於一第二狀態的示意圖。 圖3繪示本新型另一實施例之清洗裝置的示意圖。 圖4繪示本新型再一實施例之清洗裝置的示意圖。 圖5繪示本新型又一實施例之清洗裝置的示意圖。 圖6繪示本新型再一實施例之清洗裝置的示意圖。
100‧‧‧清洗裝置
110‧‧‧流體供應模組
112‧‧‧開口
114‧‧‧第三氣體供應管
120‧‧‧防漏模組
122‧‧‧本體
124‧‧‧驅動件
124a‧‧‧第一氣體供應管
126‧‧‧防漏件
126a‧‧‧容置部
126b‧‧‧集氣槽
128‧‧‧轉軸
130‧‧‧第二氣體供應管
140‧‧‧抵靠件
150‧‧‧溶液吸收件
Claims (13)
- 一種清洗裝置,包括: 一流體供應模組,包括一開口,以提供一流體來清洗一基板;以及 一防漏模組,設於該流體供應模組的一側,該防漏模組包括一本體、一驅動件及一防漏件,該驅動件及該防漏件設置於該本體,該防漏件包括一容置部,且該驅動件驅使該防漏件移動至該開口,並使該容置部位於該開口處。
- 如申請專利範圍第1項所述之清洗裝置,其中該驅動件包括一第一氣體供應管,以藉由噴出一第一氣體來驅使該防漏件移動。
- 如申請專利範圍第2項所述之清洗裝置,其中該第一氣體供應管噴出該第一氣體至該基板的表面,以乾燥該基板。
- 如申請專利範圍第2項所述之清洗裝置,其中該防漏件包括一集氣槽,而該第一氣體噴出至該集氣槽而驅使該防漏件移動。
- 如申請專利範圍第2項所述之清洗裝置,更包括一第二氣體供應管,以藉由噴出一第二氣體至該基板的表面來乾燥該基板。
- 如申請專利範圍第5項所述之清洗裝置,其中該第一氣體及該第二氣體噴出至該基板的表面,以乾燥該基板。
- 如申請專利範圍第1項所述之清洗裝置,其中該驅動件包括一氣壓伸縮件,該氣壓伸縮件包括一頂桿,而該頂桿透過一氣壓來移動而推動該防漏件。
- 如申請專利範圍第1項所述之清洗裝置,其中該驅動件包括一磁力驅動組,該磁力驅動組包括一第一磁體及一第二磁體,該第一磁體及該第二磁體至少其中之一為一電磁體,且該第一磁體及該第二磁體分別設於該本體與該防漏件相對應的一側。
- 如申請專利範圍第1項所述之清洗裝置,其中該驅動件包括一馬達、一從動件及一皮帶,該馬達設於該本體,該防漏件透過該從動件樞設於該本體,該皮帶環繞該馬達及該從動件,而該馬達經該皮帶帶動該從動件轉動,並驅動該防漏件移動。
- 如申請專利範圍第1項所述之清洗裝置,其中該驅動件包括一馬達及一從動件,該馬達設於該本體且包括一第一齒輪,該防漏件透過該從動件樞設於該本體,該從動件包括一第二齒輪,該第一齒輪與該第二齒輪相互接觸且轉動,並驅動該防漏件移動。
- 如申請專利範圍第1項所述之清洗裝置,更包括一抵靠件,該抵靠件設置於該本體,且該抵靠件位於該防漏件的移動路徑,以限制該防漏件的移動範圍。
- 如申請專利範圍第1項所述之清洗裝置,其中該防漏件經一轉軸樞設於該本體,該防漏件受到該驅動件驅使後會透過該轉軸轉動而使該容置部移動至該開口,當該防漏件不再受到該驅動件驅使,該防漏件的該容置部透過一重心偏移而遠離該開口。
- 如申請專利範圍第1項所述之清洗裝置,其中該流體供應模組更包括一第三氣體供應管,該第三氣體供應管與該流體供應模組連接,該第三氣體供應管提供一第三氣體,以與該流體混合而產生水霧來清洗該基板。
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2017
- 2017-05-25 TW TW106117427A patent/TWI645913B/zh active
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112275572A (zh) * | 2020-09-29 | 2021-01-29 | 安徽索立德铸业有限公司 | 一种水泵铸件生产线用涂料混合装置 |
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