TWI755122B - 晶圓蝕刻機 - Google Patents

晶圓蝕刻機 Download PDF

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TWI755122B
TWI755122B TW109137462A TW109137462A TWI755122B TW I755122 B TWI755122 B TW I755122B TW 109137462 A TW109137462 A TW 109137462A TW 109137462 A TW109137462 A TW 109137462A TW I755122 B TWI755122 B TW I755122B
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etching
wafer
carrier
groove
tank
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TW202217948A (zh
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馮傳彰
劉茂林
吳庭宇
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辛耘企業股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Computer Hardware Design (AREA)
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Abstract

本發明提供一種晶圓蝕刻機，用於蝕刻單一晶圓，其包括一外槽、一蝕刻槽、一載具、一旋轉馬達、一升降機構、一主管路及一排水管路。蝕刻槽設置在外槽之內。載具具有用於承載晶圓的一托架，托架懸置在蝕刻槽上方。旋轉馬達連接載具而能夠驅動載具旋轉。升降機構連動載具及外槽的至少其中之一以驅動托架與蝕刻槽相對升降而使托架移動晶圓進出蝕刻槽。主管路連通蝕刻槽以將一工作流體注入蝕刻槽。排水管路連通外槽以排除自蝕刻槽溢入外槽的工作流體。

Description

晶圓蝕刻機
本發明係有關於晶圓蝕刻機，尤其是一種用於蝕刻單一晶圓的晶圓蝕刻機。
現今的晶圓蝕刻製程之趨勢已逐漸朝向單晶圓加工的方向發展，藉此以符合產品多樣化的需求。現有的單晶圓蝕刻機係以在晶圓表面噴灑蝕刻液的方式進行蝕刻，其蝕刻液在晶圓邊緣的停留時間過短，造成晶圓邊緣的蝕刻良率不佳。針對前述的問題，現行的解決方法係先將晶圓堆疊後預浸晶圓使晶圓的表面各處與蝕刻液充分接觸後再移入蝕刻機進行蝕刻。然而，此方法需移動潮濕的晶圓，飛濺的蝕刻液難以管控。再者，批次預浸程序也失去單晶圓蝕刻的優點。
有鑑於此，本發明人遂針對上述現有技術，特潛心研究並配合學理的運用，盡力解決上述之問題點，即成為本發明人改良之目標。
本發明提供一種用於蝕刻單一晶圓的晶圓蝕刻機。
本發明提供一種晶圓蝕刻機，用於蝕刻單一晶圓，其包括一外槽、一蝕刻槽、一載具、一旋轉馬達、一升降機構、一主管路及一排水管路。蝕刻槽設置在外槽之內。載具具有用於承載晶圓的一托架，托架懸置在蝕刻槽上方。旋轉馬達連接載具而能夠驅動載具旋轉。升降機構連動載具及外槽的至少其中之一以驅動托架與蝕刻槽相對升降而使托架移動所述晶圓進出蝕刻槽。主管路連通蝕刻槽以將一工作流體注入蝕刻槽。排水管路連通外槽以排除自蝕刻槽溢入外槽的工作流體。
本發明的晶圓蝕刻機，其載具具有一旋轉座，旋轉座位於外槽下方，托架連接旋轉座且旋轉馬達連動旋轉座。旋轉座呈桶狀，且主管路及排水管路容置在旋轉座之內。外槽下方連接一支柱，且支柱穿過旋轉座。支柱呈中空桿體，主管路穿設在支柱內。支柱之側面開設有一通口，排水管路通過通口穿入支柱。
本發明的晶圓蝕刻機，其旋轉馬達及載具可以被承載於升降機構上。支柱穿過升降機構。
本發明的晶圓蝕刻機，其支柱可以連接升降機構。
本發明的晶圓蝕刻機其外槽與蝕刻槽一體構成。
本發明的晶圓蝕刻機更包含一沖洗噴嘴，沖洗噴嘴設置在蝕刻槽的一側且斜仰朝向蝕刻槽內配置。
本發明的晶圓蝕刻機其藉由可升降及旋轉的載具將晶圓浸入盛滿工作流體的蝕刻槽內進行蝕刻。因此使得工作流體能夠完全覆蓋晶圓的表面，故使蝕刻品質均勻穩定。
10:晶圓
20:工作流體
30:清洗液
100:外槽
200:蝕刻槽
300:載具
310:旋轉座
320:托架
410:旋轉馬達
420a/420b:升降機構
421a/421b:伸縮桿
422a/422b:載台
510:主管路
520:排水管路
530/540:沖洗噴嘴
600:支柱
601:通口
圖1 係本發明較佳實施例之晶圓蝕刻機之俯視圖。
圖2 係圖1所示本發明較佳實施例之晶圓蝕刻機沿2-2剖線之剖面示意圖。
圖3至圖5 係本發明較佳實施例之晶圓蝕刻機之使用狀態示意圖。
圖6及圖7 係本發明之晶圓蝕刻機之變化態樣示意圖。
參閱圖1及圖2，本發明的較佳實施例提供一種晶圓蝕刻機，其用於蝕刻單一晶圓10，其包括一外槽100、一蝕刻槽200、一載具300、一旋轉馬達410、至少一升降機構420a/420b、一主管路510及一排水管路520。
蝕刻槽200設置在外槽100之內，於本實施例中，外槽100與蝕刻槽200較佳地為一體構成。外槽100下方連接有一支柱600以支撐外槽100。
於本實施例中，載具300較佳地具有一旋轉座310以及一托架320。旋轉座310呈桶狀，旋轉座310位於外槽100下方；托架320連接旋轉座310，托架320較佳地呈爪狀而能夠用於承載晶圓10且托架320懸置在蝕刻槽200上方。於本實施例中，托架320較佳地延伸自旋轉座310，然而當托架320與旋轉座310之間間距較大時，托架320與旋轉座310之間也可以增設支架相連。
旋轉馬達410連接載具300而能夠驅動載具300旋轉。具體而言，旋轉馬達410連動旋轉座310，其可以直接嚙合旋轉座310，也可以藉由減速齒輪組間接嚙合旋轉座310。
升降機構420a/420b連動載具300及外槽100的至少其中之一以驅動托架320與蝕刻槽200相對升降而使托架320移動所述晶圓10進出蝕刻槽200。於本實施例中，本發明的晶圓蝕刻機較佳地包含有二組升降機構420a/420b，且各升降機構420a/420b分別至少包含直立設置的一伸縮桿421a/421b，伸縮桿421a/421b可以是電動缸(線性致動器)、液壓缸等動力元件，但本發明不以此為限。各升降機構420a/420b視需求可以更包含連接伸縮桿421a/421b的載台422a/422b以供承載其他構件。
主管路510連通蝕刻槽200以將一工作流體20注入蝕刻槽200，工作流體20注滿蝕刻槽200後溢入外槽100；排水管路520則連通外槽100以排除自蝕刻槽200溢入外槽100的工作流體20。於本實施例中，其工作流體20為蝕刻液，對應晶圓10上不同的鍍層需使用相對應的蝕刻液，因此本發明不限定工作流體20的種類。
於本實施例中，主管路510及排水管路520容置在旋轉座310之內。具體而言，前述的支柱600較佳地穿過旋轉座310而且與旋轉座310分離不連動，支柱600固定配置而旋轉座310為可旋轉配置。因此旋轉馬達410能夠驅動載具300相對於固定的外槽100及蝕刻槽200旋轉。支柱600呈中空桿體，主管路510穿設在支柱600內，其貫穿外槽100及蝕刻槽200連通至蝕刻槽200內底面之中心，而且蝕刻槽200內底面形成凹入的錐面且主管路510連通錐面的錐尖以便於排水。支柱600之側面開設有通口601，排水管路520通過通口601穿入支柱600。
於本實施例中，載具300及支柱600分別連接不同的各升降機構420a/420b。其中一升降機構420a承載載具300而能夠驅動載具300升降，連接支 柱600的另一升降機構420b則能夠驅動外槽100及蝕刻槽200升降，藉此使得托架320與蝕刻槽200相對升降以移動晶圓10進出蝕刻槽200。
具體而言，旋轉馬達410及載具300被承載於對應的升降機構420a上而能夠被此升降機構420a驅動升降，且旋轉座310可旋轉地連接此升降機構420a。支柱600則穿過前述的升降機構420a並連接另一升降機構420b而被其驅動升降。因此二組升降機構420a/420b能夠分別驅動載具300及蝕刻槽200相對升降而使托架320移動晶圓10進出蝕刻槽200。
圖2至圖4係圖1所示本發明較佳實施例之晶圓蝕刻機沿2-2剖線之剖面示意圖。
參閱圖2，本發明的晶圓蝕刻機使用時，托架320先位於蝕刻槽200之外的上方，以便於將晶圓10水平置入托架320。
參閱圖3，接著以托架320將晶圓10移入蝕刻槽200內。再通過主管路510持續地將工作流體20注入蝕刻槽200以淹沒入蝕刻槽200內的晶圓10。蝕刻槽200同時通過蝕刻槽200的口緣溢流至外槽100內並進一步通過排水管路520回收循環至主管路510或者回收處理後排放。藉由旋轉馬達410轉動載具300而使托架320帶動晶圓10旋轉以使晶圓10的表面能被適度地蝕刻。
參閱圖4，蝕刻完成後以托架320將晶圓10移出蝕刻槽200。蝕刻槽200內剩餘的工作流體20通過主管路510排出蝕刻槽200。
圖5係圖1所示本發明較佳實施例之晶圓蝕刻機沿5-5剖線之剖面示意圖。
參閱圖5，本發明的晶圓蝕刻機，更包含一沖洗噴嘴530以噴灑清洗液30，沖洗噴嘴530蝕刻槽200的一側且斜仰朝向蝕刻槽200內配置。以沖洗噴 嘴530對晶圓10噴灑清洗液30以去除晶圓10上殘留的工作流體20。清洗液30可以是水或是其他揮發性溶液。沖洗晶圓10時可以同時藉由旋轉馬達410轉動載具300而使托架320帶動晶圓10旋轉以分別由各方向確實沖洗晶圓10。使用後的清洗液30流入蝕刻槽200並通過主管路510排出蝕刻槽200。另外，托架320上方也可以設置有可移動的另一沖洗噴嘴540，當沖洗時能夠移動至晶圓上方以配合沖洗晶圓10的頂面。
前述實施例所示為升降機構420a/420b的一種配置方式，然而本發明不以此為限。升降機構420a/420b之作用在於驅動托架320與蝕刻槽200相對升降，本實例中另列舉數種其他可能的配置方式進一步說明如後。
參閱圖6，晶圓蝕刻機可以配置單一升降機構420b且只連接支柱600，此升降機構420b能夠驅動外槽100及蝕刻槽200相對於鉛直方向上固定的載具300升降而使晶圓10進出蝕刻槽200。
參閱圖7，晶圓蝕刻機可以配置單一升降機構420a且旋轉馬達410及載具300被承載於此升降機構420a上而能夠被升降機構420a驅動升降，且旋轉座310可旋轉地連接升降機構420a。支柱600則穿過前述的升降機構並與其分離且固定配置。此升降機構420a能夠分別驅動載具300相對於固定的及蝕刻槽200相對升降而使托架320移動晶圓10進出蝕刻槽200。
本發明的晶圓蝕刻機其藉由可升降及旋轉的載具300將晶圓10浸入盛滿工作流體20的蝕刻槽200內進行蝕刻。因此使得工作流體20能夠完全覆蓋晶圓10的表面，故使蝕刻品質均勻穩定。再者，本發明的晶圓蝕刻機其藉由外槽100、主管路510及排水管路520之配置而便於管控工作流體20及清洗液30的供入、回收及排放。
以上所述僅為本發明之較佳實施例，非用以限定本發明之專利範圍，其他運用本發明之專利精神之等效變化，均應俱屬本發明之專利範圍。
10:晶圓
20:工作流體
100:外槽
200:蝕刻槽
300:載具
310:旋轉座
320:托架
410:旋轉馬達
420a/420b:升降機構
421a/421b:伸縮桿
422a/422b:載台
510:主管路
520:排水管路
530:沖洗噴嘴
600:支柱
601:通口

Claims (10)

  1. 一種晶圓蝕刻機，用於蝕刻單一晶圓，該晶圓蝕刻機包括：一外槽；一蝕刻槽，設置在該外槽之內；一載具，具有用於承載所述晶圓的一托架，該托架懸置在該蝕刻槽上方；一旋轉馬達，連接該載具而能夠驅動該載具旋轉；一升降機構，連動該載具及該外槽的至少其中之一以驅動該托架與該蝕刻槽相對升降而使該托架移動所述晶圓進出該蝕刻槽；一主管路，連通該蝕刻槽以將一工作流體注入該蝕刻槽；及一排水管路，連通該外槽以排除自該蝕刻槽溢入該外槽的該工作流體，其中該載具具有一旋轉座，該旋轉座位於該外槽下方，該托架連接該旋轉座且該旋轉馬達連動該旋轉座。
  2. 如請求項1所述的晶圓蝕刻機，其中該旋轉座呈桶狀，且該主管路及該排水管路容置在該旋轉座之內。
  3. 如請求項1所述的晶圓蝕刻機，其中該外槽下方連接一支柱，且該支柱穿過該旋轉座。
  4. 如請求項3所述的晶圓蝕刻機，其中該支柱呈中空桿體，該主管路穿設在該支柱內。
  5. 如請求項4所述的晶圓蝕刻機，其中該支柱之側面開設有一通口，該排水管路通過該通口穿入該支柱。
  6. 如請求項3所述的晶圓蝕刻機，其中該旋轉馬達及該載具被承載於該升降機構上。
  7. 如請求項6所述的晶圓蝕刻機，其中該支柱穿過該升降機構。
  8. 如請求項3所述的晶圓蝕刻機，其中該支柱連接該升降機構。
  9. 如請求項1所述的晶圓蝕刻機其中該外槽與該蝕刻槽一體構成。
  10. 如請求項1所述的晶圓蝕刻機，更包含一沖洗噴嘴，該沖洗噴嘴設置在該蝕刻槽的一側且斜仰朝向該蝕刻槽內配置。
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CN116344411B (zh) * 2023-05-26 2023-08-01 四川上特科技有限公司 一种晶圆沟槽腐蚀装置
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