CN1720588A - 每一存储单元电荷存储元件具有双重控制栅极的闪速存储单元阵列 - Google Patents
每一存储单元电荷存储元件具有双重控制栅极的闪速存储单元阵列 Download PDFInfo
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- CN1720588A CN1720588A CNA200380104733XA CN200380104733A CN1720588A CN 1720588 A CN1720588 A CN 1720588A CN A200380104733X A CNA200380104733X A CN A200380104733XA CN 200380104733 A CN200380104733 A CN 200380104733A CN 1720588 A CN1720588 A CN 1720588A
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (37)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/282,747 US6888755B2 (en) | 2002-10-28 | 2002-10-28 | Flash memory cell arrays having dual control gates per memory cell charge storage element |
US10/282,747 | 2002-10-28 | ||
PCT/US2003/032383 WO2004040583A1 (en) | 2002-10-28 | 2003-10-09 | Flash memory cell arrays having dual control gates per memory cell charge storage element |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1720588A true CN1720588A (zh) | 2006-01-11 |
CN1720588B CN1720588B (zh) | 2010-04-28 |
Family
ID=32107440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200380104733XA Expired - Fee Related CN1720588B (zh) | 2002-10-28 | 2003-10-09 | 每一存储单元电荷存储元件具有双重控制栅极的闪速存储单元阵列 |
Country Status (9)
Country | Link |
---|---|
US (8) | US6888755B2 (zh) |
EP (1) | EP1556866B1 (zh) |
JP (2) | JP4933048B2 (zh) |
KR (1) | KR20050091702A (zh) |
CN (1) | CN1720588B (zh) |
AT (1) | ATE418783T1 (zh) |
AU (1) | AU2003279257A1 (zh) |
DE (1) | DE60325500D1 (zh) |
WO (1) | WO2004040583A1 (zh) |
Cited By (6)
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CN101901812A (zh) * | 2009-05-14 | 2010-12-01 | 台湾积体电路制造股份有限公司 | 半导体存储元件及电子元件与其形成方法 |
CN101552039B (zh) * | 2008-03-31 | 2012-05-30 | 株式会社东芝 | 非易失性半导体存储装置及其驱动方法 |
CN103794564A (zh) * | 2012-10-26 | 2014-05-14 | 李迪 | 一种半导体结构及其制造方法 |
CN104124251A (zh) * | 2009-08-26 | 2014-10-29 | 美光科技公司 | 基于电荷陷阱的存储器 |
CN104810364A (zh) * | 2014-01-26 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | 一种集成电路及其制造方法 |
CN110718256A (zh) * | 2018-07-13 | 2020-01-21 | 西安格易安创集成电路有限公司 | 一种非易失存储器处理电路及方法 |
Families Citing this family (211)
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JP4084922B2 (ja) * | 2000-12-22 | 2008-04-30 | 株式会社ルネサステクノロジ | 不揮発性記憶装置の書込み方法 |
US6762092B2 (en) * | 2001-08-08 | 2004-07-13 | Sandisk Corporation | Scalable self-aligned dual floating gate memory cell array and methods of forming the array |
US6995414B2 (en) | 2001-11-16 | 2006-02-07 | Kabushiki Kaisha Toshiba | Semiconductor memory device including multi-layer gate structure |
US6894930B2 (en) | 2002-06-19 | 2005-05-17 | Sandisk Corporation | Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND |
US6888755B2 (en) * | 2002-10-28 | 2005-05-03 | Sandisk Corporation | Flash memory cell arrays having dual control gates per memory cell charge storage element |
JP2004152977A (ja) * | 2002-10-30 | 2004-05-27 | Renesas Technology Corp | 半導体記憶装置 |
US6888190B2 (en) * | 2002-10-31 | 2005-05-03 | Ememory Technology Inc. | EEPROM with source line voltage stabilization mechanism |
US7233522B2 (en) * | 2002-12-31 | 2007-06-19 | Sandisk 3D Llc | NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same |
US7505321B2 (en) | 2002-12-31 | 2009-03-17 | Sandisk 3D Llc | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
JP3927156B2 (ja) * | 2003-02-26 | 2007-06-06 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100628419B1 (ko) * | 2003-02-26 | 2006-09-28 | 가부시끼가이샤 도시바 | 개선된 게이트 전극을 포함하는 불휘발성 반도체 기억 장치 |
JP4909682B2 (ja) * | 2003-02-26 | 2012-04-04 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7759719B2 (en) * | 2004-07-01 | 2010-07-20 | Chih-Hsin Wang | Electrically alterable memory cell |
US7608882B2 (en) * | 2003-08-11 | 2009-10-27 | Macronix International Co., Ltd. | Split-gate non-volatile memory |
DE10339283B9 (de) * | 2003-08-26 | 2009-03-05 | Infineon Technologies Ag | Verfahren zum Entwurf von integrierten Schaltkreisen mit Ersatz-Logikgattern |
US6905926B2 (en) * | 2003-09-04 | 2005-06-14 | Atmel Corporation | Method of making nonvolatile transistor pairs with shared control gate |
JP4005962B2 (ja) * | 2003-09-22 | 2007-11-14 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100593599B1 (ko) * | 2003-12-30 | 2006-06-28 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US7355237B2 (en) * | 2004-02-13 | 2008-04-08 | Sandisk Corporation | Shield plate for limiting cross coupling between floating gates |
KR101085406B1 (ko) * | 2004-02-16 | 2011-11-21 | 삼성전자주식회사 | 불 휘발성 메모리를 제어하기 위한 컨트롤러 |
US7072215B2 (en) * | 2004-02-24 | 2006-07-04 | Taiwan Semiconductor Manufacturing Company | Array structure of two-transistor cells with merged floating gates for byte erase and re-write if disturbed algorithm |
US7020017B2 (en) * | 2004-04-06 | 2006-03-28 | Sandisk Corporation | Variable programming of non-volatile memory |
US7448012B1 (en) * | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
US7274596B2 (en) * | 2004-06-30 | 2007-09-25 | Micron Technology, Inc. | Reduction of adjacent floating gate data pattern sensitivity |
US20080203464A1 (en) * | 2004-07-01 | 2008-08-28 | Chih-Hsin Wang | Electrically alterable non-volatile memory and array |
US7387932B2 (en) * | 2004-07-06 | 2008-06-17 | Macronix International Co., Ltd. | Method for manufacturing a multiple-gate charge trapping non-volatile memory |
US7151040B2 (en) * | 2004-08-31 | 2006-12-19 | Micron Technology, Inc. | Methods for increasing photo alignment margins |
US7910288B2 (en) | 2004-09-01 | 2011-03-22 | Micron Technology, Inc. | Mask material conversion |
US7115525B2 (en) | 2004-09-02 | 2006-10-03 | Micron Technology, Inc. | Method for integrated circuit fabrication using pitch multiplication |
US7655387B2 (en) | 2004-09-02 | 2010-02-02 | Micron Technology, Inc. | Method to align mask patterns |
JP4271111B2 (ja) | 2004-09-21 | 2009-06-03 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7381615B2 (en) * | 2004-11-23 | 2008-06-03 | Sandisk Corporation | Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices |
US7402886B2 (en) * | 2004-11-23 | 2008-07-22 | Sandisk Corporation | Memory with self-aligned trenches for narrow gap isolation regions |
US6980471B1 (en) * | 2004-12-23 | 2005-12-27 | Sandisk Corporation | Substrate electron injection techniques for programming non-volatile charge storage memory cells |
US7315474B2 (en) | 2005-01-03 | 2008-01-01 | Macronix International Co., Ltd | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US7473589B2 (en) | 2005-12-09 | 2009-01-06 | Macronix International Co., Ltd. | Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same |
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US7390746B2 (en) | 2005-03-15 | 2008-06-24 | Micron Technology, Inc. | Multiple deposition for integration of spacers in pitch multiplication process |
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US7611944B2 (en) | 2005-03-28 | 2009-11-03 | Micron Technology, Inc. | Integrated circuit fabrication |
JP4921723B2 (ja) * | 2005-04-18 | 2012-04-25 | 株式会社東芝 | 半導体装置の製造方法 |
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2002
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CN101552039B (zh) * | 2008-03-31 | 2012-05-30 | 株式会社东芝 | 非易失性半导体存储装置及其驱动方法 |
CN101901812A (zh) * | 2009-05-14 | 2010-12-01 | 台湾积体电路制造股份有限公司 | 半导体存储元件及电子元件与其形成方法 |
CN104124251A (zh) * | 2009-08-26 | 2014-10-29 | 美光科技公司 | 基于电荷陷阱的存储器 |
CN104124251B (zh) * | 2009-08-26 | 2017-05-17 | 美光科技公司 | 基于电荷陷阱的存储器 |
CN103794564A (zh) * | 2012-10-26 | 2014-05-14 | 李迪 | 一种半导体结构及其制造方法 |
CN104810364A (zh) * | 2014-01-26 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | 一种集成电路及其制造方法 |
CN104810364B (zh) * | 2014-01-26 | 2018-03-30 | 中芯国际集成电路制造(上海)有限公司 | 一种集成电路及其制造方法 |
CN110718256A (zh) * | 2018-07-13 | 2020-01-21 | 西安格易安创集成电路有限公司 | 一种非易失存储器处理电路及方法 |
CN110718256B (zh) * | 2018-07-13 | 2021-07-09 | 西安格易安创集成电路有限公司 | 一种非易失存储器处理电路及方法 |
Also Published As
Publication number | Publication date |
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JP4933048B2 (ja) | 2012-05-16 |
US20060176736A1 (en) | 2006-08-10 |
US8334180B2 (en) | 2012-12-18 |
US6888755B2 (en) | 2005-05-03 |
US7994004B2 (en) | 2011-08-09 |
CN1720588B (zh) | 2010-04-28 |
US20040079988A1 (en) | 2004-04-29 |
JP5718718B2 (ja) | 2015-05-13 |
US20040165443A1 (en) | 2004-08-26 |
JP2006504280A (ja) | 2006-02-02 |
US7303956B2 (en) | 2007-12-04 |
US7638834B2 (en) | 2009-12-29 |
US7502261B2 (en) | 2009-03-10 |
US20060205120A1 (en) | 2006-09-14 |
US20060187714A1 (en) | 2006-08-24 |
AU2003279257A1 (en) | 2004-05-25 |
US20100047982A1 (en) | 2010-02-25 |
US7075823B2 (en) | 2006-07-11 |
EP1556866B1 (en) | 2008-12-24 |
US7486555B2 (en) | 2009-02-03 |
US20110287619A1 (en) | 2011-11-24 |
WO2004040583A1 (en) | 2004-05-13 |
EP1556866A1 (en) | 2005-07-27 |
US20060202256A1 (en) | 2006-09-14 |
ATE418783T1 (de) | 2009-01-15 |
DE60325500D1 (de) | 2009-02-05 |
JP2011205107A (ja) | 2011-10-13 |
KR20050091702A (ko) | 2005-09-15 |
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