JP4084922B2
(ja)
*
|
2000-12-22 |
2008-04-30 |
株式会社ルネサステクノロジ |
不揮発性記憶装置の書込み方法
|
US6762092B2
(en)
*
|
2001-08-08 |
2004-07-13 |
Sandisk Corporation |
Scalable self-aligned dual floating gate memory cell array and methods of forming the array
|
US6995414B2
(en)
*
|
2001-11-16 |
2006-02-07 |
Kabushiki Kaisha Toshiba |
Semiconductor memory device including multi-layer gate structure
|
US6894930B2
(en)
|
2002-06-19 |
2005-05-17 |
Sandisk Corporation |
Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
|
US6888755B2
(en)
*
|
2002-10-28 |
2005-05-03 |
Sandisk Corporation |
Flash memory cell arrays having dual control gates per memory cell charge storage element
|
JP2004152977A
(ja)
*
|
2002-10-30 |
2004-05-27 |
Renesas Technology Corp |
半導体記憶装置
|
US6888190B2
(en)
*
|
2002-10-31 |
2005-05-03 |
Ememory Technology Inc. |
EEPROM with source line voltage stabilization mechanism
|
US7505321B2
(en)
|
2002-12-31 |
2009-03-17 |
Sandisk 3D Llc |
Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same
|
US7233522B2
(en)
*
|
2002-12-31 |
2007-06-19 |
Sandisk 3D Llc |
NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
|
KR100628419B1
(ko)
*
|
2003-02-26 |
2006-09-28 |
가부시끼가이샤 도시바 |
개선된 게이트 전극을 포함하는 불휘발성 반도체 기억 장치
|
JP3927156B2
(ja)
*
|
2003-02-26 |
2007-06-06 |
株式会社東芝 |
不揮発性半導体記憶装置
|
JP4909682B2
(ja)
*
|
2003-02-26 |
2012-04-04 |
株式会社東芝 |
不揮発性半導体記憶装置
|
US7759719B2
(en)
*
|
2004-07-01 |
2010-07-20 |
Chih-Hsin Wang |
Electrically alterable memory cell
|
US7608882B2
(en)
*
|
2003-08-11 |
2009-10-27 |
Macronix International Co., Ltd. |
Split-gate non-volatile memory
|
DE10339283B9
(de)
*
|
2003-08-26 |
2009-03-05 |
Infineon Technologies Ag |
Verfahren zum Entwurf von integrierten Schaltkreisen mit Ersatz-Logikgattern
|
US6905926B2
(en)
*
|
2003-09-04 |
2005-06-14 |
Atmel Corporation |
Method of making nonvolatile transistor pairs with shared control gate
|
JP4005962B2
(ja)
*
|
2003-09-22 |
2007-11-14 |
株式会社東芝 |
不揮発性半導体記憶装置
|
KR100593599B1
(ko)
*
|
2003-12-30 |
2006-06-28 |
동부일렉트로닉스 주식회사 |
반도체 소자의 제조 방법
|
US7355237B2
(en)
*
|
2004-02-13 |
2008-04-08 |
Sandisk Corporation |
Shield plate for limiting cross coupling between floating gates
|
KR101085406B1
(ko)
*
|
2004-02-16 |
2011-11-21 |
삼성전자주식회사 |
불 휘발성 메모리를 제어하기 위한 컨트롤러
|
US7072215B2
(en)
*
|
2004-02-24 |
2006-07-04 |
Taiwan Semiconductor Manufacturing Company |
Array structure of two-transistor cells with merged floating gates for byte erase and re-write if disturbed algorithm
|
US7020017B2
(en)
*
|
2004-04-06 |
2006-03-28 |
Sandisk Corporation |
Variable programming of non-volatile memory
|
US7448012B1
(en)
*
|
2004-04-21 |
2008-11-04 |
Qi-De Qian |
Methods and system for improving integrated circuit layout
|
US7274596B2
(en)
*
|
2004-06-30 |
2007-09-25 |
Micron Technology, Inc. |
Reduction of adjacent floating gate data pattern sensitivity
|
US20080203464A1
(en)
*
|
2004-07-01 |
2008-08-28 |
Chih-Hsin Wang |
Electrically alterable non-volatile memory and array
|
US7387932B2
(en)
*
|
2004-07-06 |
2008-06-17 |
Macronix International Co., Ltd. |
Method for manufacturing a multiple-gate charge trapping non-volatile memory
|
US7151040B2
(en)
*
|
2004-08-31 |
2006-12-19 |
Micron Technology, Inc. |
Methods for increasing photo alignment margins
|
US7910288B2
(en)
|
2004-09-01 |
2011-03-22 |
Micron Technology, Inc. |
Mask material conversion
|
US7655387B2
(en)
*
|
2004-09-02 |
2010-02-02 |
Micron Technology, Inc. |
Method to align mask patterns
|
US7115525B2
(en)
|
2004-09-02 |
2006-10-03 |
Micron Technology, Inc. |
Method for integrated circuit fabrication using pitch multiplication
|
JP4271111B2
(ja)
|
2004-09-21 |
2009-06-03 |
株式会社東芝 |
不揮発性半導体記憶装置
|
US7381615B2
(en)
*
|
2004-11-23 |
2008-06-03 |
Sandisk Corporation |
Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices
|
US7416956B2
(en)
*
|
2004-11-23 |
2008-08-26 |
Sandisk Corporation |
Self-aligned trench filling for narrow gap isolation regions
|
US6980471B1
(en)
*
|
2004-12-23 |
2005-12-27 |
Sandisk Corporation |
Substrate electron injection techniques for programming non-volatile charge storage memory cells
|
US8482052B2
(en)
|
2005-01-03 |
2013-07-09 |
Macronix International Co., Ltd. |
Silicon on insulator and thin film transistor bandgap engineered split gate memory
|
US7473589B2
(en)
|
2005-12-09 |
2009-01-06 |
Macronix International Co., Ltd. |
Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same
|
US7315474B2
(en)
|
2005-01-03 |
2008-01-01 |
Macronix International Co., Ltd |
Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
|
TWI270199B
(en)
*
|
2005-01-31 |
2007-01-01 |
Powerchip Semiconductor Corp |
Non-volatile memory and manufacturing method and operating method thereof
|
US7390746B2
(en)
|
2005-03-15 |
2008-06-24 |
Micron Technology, Inc. |
Multiple deposition for integration of spacers in pitch multiplication process
|
US7253118B2
(en)
*
|
2005-03-15 |
2007-08-07 |
Micron Technology, Inc. |
Pitch reduced patterns relative to photolithography features
|
US7611944B2
(en)
|
2005-03-28 |
2009-11-03 |
Micron Technology, Inc. |
Integrated circuit fabrication
|
JP4921723B2
(ja)
*
|
2005-04-18 |
2012-04-25 |
株式会社東芝 |
半導体装置の製造方法
|
KR100691490B1
(ko)
*
|
2005-04-29 |
2007-03-09 |
주식회사 하이닉스반도체 |
플래시 메모리 소자의 게이트 형성 방법
|
US7585724B2
(en)
*
|
2005-05-10 |
2009-09-08 |
Elite Semiconductor Memory Technology, Inc. |
FLASH memory device and method of manufacture
|
US7371627B1
(en)
|
2005-05-13 |
2008-05-13 |
Micron Technology, Inc. |
Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines
|
US7120046B1
(en)
|
2005-05-13 |
2006-10-10 |
Micron Technology, Inc. |
Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
|
US7429536B2
(en)
|
2005-05-23 |
2008-09-30 |
Micron Technology, Inc. |
Methods for forming arrays of small, closely spaced features
|
US7560390B2
(en)
*
|
2005-06-02 |
2009-07-14 |
Micron Technology, Inc. |
Multiple spacer steps for pitch multiplication
|
US7396781B2
(en)
*
|
2005-06-09 |
2008-07-08 |
Micron Technology, Inc. |
Method and apparatus for adjusting feature size and position
|
CN101506981A
(zh)
*
|
2005-06-21 |
2009-08-12 |
纳诺斯塔公司 |
用于存储多个数据的非易失性电学可改写存储器单元及其阵列
|
US7411244B2
(en)
|
2005-06-28 |
2008-08-12 |
Chih-Hsin Wang |
Low power electrically alterable nonvolatile memory cells and arrays
|
US7750384B2
(en)
*
|
2005-06-29 |
2010-07-06 |
Hynix Semiconductor Inc. |
Flash memory device having intergated plug
|
JP2007012180A
(ja)
*
|
2005-06-30 |
2007-01-18 |
Renesas Technology Corp |
半導体記憶装置
|
KR100673229B1
(ko)
*
|
2005-07-04 |
2007-01-22 |
주식회사 하이닉스반도체 |
낸드형 플래시 메모리 소자 및 그것의 제조방법
|
US7888721B2
(en)
|
2005-07-06 |
2011-02-15 |
Micron Technology, Inc. |
Surround gate access transistors with grown ultra-thin bodies
|
US7768051B2
(en)
|
2005-07-25 |
2010-08-03 |
Micron Technology, Inc. |
DRAM including a vertical surround gate transistor
|
US7413981B2
(en)
*
|
2005-07-29 |
2008-08-19 |
Micron Technology, Inc. |
Pitch doubled circuit layout
|
US7763927B2
(en)
|
2005-12-15 |
2010-07-27 |
Macronix International Co., Ltd. |
Non-volatile memory device having a nitride-oxide dielectric layer
|
US8123968B2
(en)
*
|
2005-08-25 |
2012-02-28 |
Round Rock Research, Llc |
Multiple deposition for integration of spacers in pitch multiplication process
|
US7816262B2
(en)
*
|
2005-08-30 |
2010-10-19 |
Micron Technology, Inc. |
Method and algorithm for random half pitched interconnect layout with constant spacing
|
US7936604B2
(en)
*
|
2005-08-30 |
2011-05-03 |
Halo Lsi Inc. |
High speed operation method for twin MONOS metal bit array
|
US7696567B2
(en)
|
2005-08-31 |
2010-04-13 |
Micron Technology, Inc |
Semiconductor memory device
|
US7829262B2
(en)
*
|
2005-08-31 |
2010-11-09 |
Micron Technology, Inc. |
Method of forming pitch multipled contacts
|
US7322138B2
(en)
*
|
2005-08-31 |
2008-01-29 |
Southern Imperial, Inc. |
Shelf edge sign holder
|
US7416943B2
(en)
|
2005-09-01 |
2008-08-26 |
Micron Technology, Inc. |
Peripheral gate stacks and recessed array gates
|
US7393789B2
(en)
*
|
2005-09-01 |
2008-07-01 |
Micron Technology, Inc. |
Protective coating for planarization
|
US7572572B2
(en)
|
2005-09-01 |
2009-08-11 |
Micron Technology, Inc. |
Methods for forming arrays of small, closely spaced features
|
US7687342B2
(en)
*
|
2005-09-01 |
2010-03-30 |
Micron Technology, Inc. |
Method of manufacturing a memory device
|
US7759197B2
(en)
*
|
2005-09-01 |
2010-07-20 |
Micron Technology, Inc. |
Method of forming isolated features using pitch multiplication
|
US7776744B2
(en)
*
|
2005-09-01 |
2010-08-17 |
Micron Technology, Inc. |
Pitch multiplication spacers and methods of forming the same
|
US7557032B2
(en)
*
|
2005-09-01 |
2009-07-07 |
Micron Technology, Inc. |
Silicided recessed silicon
|
US7130221B1
(en)
|
2005-09-26 |
2006-10-31 |
Macronix International Co., Ltd. |
Dual gate multi-bit semiconductor memory
|
US7294888B1
(en)
*
|
2005-09-30 |
2007-11-13 |
Xilinx, Inc. |
CMOS-compatible non-volatile memory cell with lateral inter-poly programming layer
|
US20070085129A1
(en)
*
|
2005-10-14 |
2007-04-19 |
Macronix International Co., Ltd. |
Nitride read only memory device with buried diffusion spacers and method for making the same
|
JP2007165862A
(ja)
*
|
2005-11-15 |
2007-06-28 |
Toshiba Corp |
半導体装置の製造方法
|
JP2007157854A
(ja)
*
|
2005-12-01 |
2007-06-21 |
Toshiba Corp |
不揮発性半導体記憶装置及びその製造方法
|
US7615448B2
(en)
*
|
2005-12-06 |
2009-11-10 |
Sandisk Corporation |
Method of forming low resistance void-free contacts
|
US7737483B2
(en)
*
|
2005-12-06 |
2010-06-15 |
Sandisk Corporation |
Low resistance void-free contacts
|
US7495294B2
(en)
*
|
2005-12-21 |
2009-02-24 |
Sandisk Corporation |
Flash devices with shared word lines
|
US7655536B2
(en)
*
|
2005-12-21 |
2010-02-02 |
Sandisk Corporation |
Methods of forming flash devices with shared word lines
|
WO2007081642A2
(en)
*
|
2005-12-21 |
2007-07-19 |
Sandisk Corporation |
Flash devicewith shared word lines and manufacturing methods thereof
|
US7973366B2
(en)
|
2006-02-13 |
2011-07-05 |
Macronix International Co., Ltd. |
Dual-gate, sonos, non-volatile memory cells and arrays thereof
|
US7902589B2
(en)
*
|
2006-02-17 |
2011-03-08 |
Macronix International Co., Ltd. |
Dual gate multi-bit semiconductor memory array
|
US7476933B2
(en)
|
2006-03-02 |
2009-01-13 |
Micron Technology, Inc. |
Vertical gated access transistor
|
US7842558B2
(en)
*
|
2006-03-02 |
2010-11-30 |
Micron Technology, Inc. |
Masking process for simultaneously patterning separate regions
|
US7499319B2
(en)
*
|
2006-03-03 |
2009-03-03 |
Sandisk Corporation |
Read operation for non-volatile storage with compensation for coupling
|
US7436733B2
(en)
*
|
2006-03-03 |
2008-10-14 |
Sandisk Corporation |
System for performing read operation on non-volatile storage with compensation for coupling
|
JP4791868B2
(ja)
*
|
2006-03-28 |
2011-10-12 |
株式会社東芝 |
Fin−NAND型フラッシュメモリ
|
KR100719379B1
(ko)
|
2006-03-30 |
2007-05-17 |
삼성전자주식회사 |
비휘발성 메모리 장치
|
US7902074B2
(en)
|
2006-04-07 |
2011-03-08 |
Micron Technology, Inc. |
Simplified pitch doubling process flow
|
US7436713B2
(en)
|
2006-04-12 |
2008-10-14 |
Sandisk Corporation |
Reducing the impact of program disturb
|
US7515463B2
(en)
|
2006-04-12 |
2009-04-07 |
Sandisk Corporation |
Reducing the impact of program disturb during read
|
US7426137B2
(en)
|
2006-04-12 |
2008-09-16 |
Sandisk Corporation |
Apparatus for reducing the impact of program disturb during read
|
US7499326B2
(en)
*
|
2006-04-12 |
2009-03-03 |
Sandisk Corporation |
Apparatus for reducing the impact of program disturb
|
US7951669B2
(en)
*
|
2006-04-13 |
2011-05-31 |
Sandisk Corporation |
Methods of making flash memory cell arrays having dual control gates per memory cell charge storage element
|
US7638878B2
(en)
*
|
2006-04-13 |
2009-12-29 |
Micron Technology, Inc. |
Devices and systems including the bit lines and bit line contacts
|
US8003310B2
(en)
*
|
2006-04-24 |
2011-08-23 |
Micron Technology, Inc. |
Masking techniques and templates for dense semiconductor fabrication
|
US7488685B2
(en)
|
2006-04-25 |
2009-02-10 |
Micron Technology, Inc. |
Process for improving critical dimension uniformity of integrated circuit arrays
|
US7907450B2
(en)
|
2006-05-08 |
2011-03-15 |
Macronix International Co., Ltd. |
Methods and apparatus for implementing bit-by-bit erase of a flash memory device
|
US7440331B2
(en)
|
2006-06-01 |
2008-10-21 |
Sandisk Corporation |
Verify operation for non-volatile storage using different voltages
|
US7795149B2
(en)
|
2006-06-01 |
2010-09-14 |
Micron Technology, Inc. |
Masking techniques and contact imprint reticles for dense semiconductor fabrication
|
US7457163B2
(en)
|
2006-06-01 |
2008-11-25 |
Sandisk Corporation |
System for verifying non-volatile storage using different voltages
|
US7310272B1
(en)
*
|
2006-06-02 |
2007-12-18 |
Sandisk Corporation |
System for performing data pattern sensitivity compensation using different voltage
|
US7723009B2
(en)
|
2006-06-02 |
2010-05-25 |
Micron Technology, Inc. |
Topography based patterning
|
US7450421B2
(en)
*
|
2006-06-02 |
2008-11-11 |
Sandisk Corporation |
Data pattern sensitivity compensation using different voltage
|
KR100777016B1
(ko)
*
|
2006-06-20 |
2007-11-16 |
재단법인서울대학교산학협력재단 |
기둥 구조를 갖는 낸드 플래시 메모리 어레이 및 그제조방법
|
US8188536B2
(en)
*
|
2006-06-26 |
2012-05-29 |
Macronix International Co., Ltd. |
Memory device and manufacturing method and operating method thereof
|
US20080017890A1
(en)
*
|
2006-06-30 |
2008-01-24 |
Sandisk 3D Llc |
Highly dense monolithic three dimensional memory array and method for forming
|
KR101320519B1
(ko)
*
|
2006-07-27 |
2013-10-23 |
삼성전자주식회사 |
패스 트랜지스터를 갖는 비휘발성 메모리 소자 및 그 동작방법
|
US7611980B2
(en)
|
2006-08-30 |
2009-11-03 |
Micron Technology, Inc. |
Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
|
US7666578B2
(en)
|
2006-09-14 |
2010-02-23 |
Micron Technology, Inc. |
Efficient pitch multiplication process
|
KR101427362B1
(ko)
*
|
2006-09-19 |
2014-08-07 |
샌디스크 테크놀로지스, 인코포레이티드 |
기판 트렌치에 스페이서로 형성된 플로팅 게이트를 구비하는 비휘발성 메모리 셀의 어레이
|
US7646054B2
(en)
*
|
2006-09-19 |
2010-01-12 |
Sandisk Corporation |
Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
|
US7696044B2
(en)
*
|
2006-09-19 |
2010-04-13 |
Sandisk Corporation |
Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
|
US7615445B2
(en)
*
|
2006-09-21 |
2009-11-10 |
Sandisk Corporation |
Methods of reducing coupling between floating gates in nonvolatile memory
|
US20080074920A1
(en)
*
|
2006-09-21 |
2008-03-27 |
Henry Chien |
Nonvolatile Memory with Reduced Coupling Between Floating Gates
|
KR100764060B1
(ko)
*
|
2006-09-29 |
2007-10-09 |
삼성전자주식회사 |
불휘발성 메모리 장치 및 시스템 그리고 그것을 위한메모리 셀 어레이 구조
|
US7583530B2
(en)
*
|
2006-10-02 |
2009-09-01 |
Mammen Thomas |
Multi-bit memory technology (MMT) and cells
|
US8129289B2
(en)
|
2006-10-05 |
2012-03-06 |
Micron Technology, Inc. |
Method to deposit conformal low temperature SiO2
|
US8772858B2
(en)
|
2006-10-11 |
2014-07-08 |
Macronix International Co., Ltd. |
Vertical channel memory and manufacturing method thereof and operating method using the same
|
US7811890B2
(en)
|
2006-10-11 |
2010-10-12 |
Macronix International Co., Ltd. |
Vertical channel transistor structure and manufacturing method thereof
|
US7800161B2
(en)
*
|
2006-12-21 |
2010-09-21 |
Sandisk Corporation |
Flash NAND memory cell array with charge storage elements positioned in trenches
|
US7642160B2
(en)
*
|
2006-12-21 |
2010-01-05 |
Sandisk Corporation |
Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches
|
US7518923B2
(en)
|
2006-12-29 |
2009-04-14 |
Sandisk Corporation |
Margined neighbor reading for non-volatile memory read operations including coupling compensation
|
US7616498B2
(en)
*
|
2006-12-29 |
2009-11-10 |
Sandisk Corporation |
Non-volatile storage system with resistance sensing and compensation
|
US7606070B2
(en)
*
|
2006-12-29 |
2009-10-20 |
Sandisk Corporation |
Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
|
US7495962B2
(en)
*
|
2006-12-29 |
2009-02-24 |
Sandisk Corporation |
Alternating read mode
|
US7440324B2
(en)
*
|
2006-12-29 |
2008-10-21 |
Sandisk Corporation |
Apparatus with alternating read mode
|
US7590002B2
(en)
*
|
2006-12-29 |
2009-09-15 |
Sandisk Corporation |
Resistance sensing and compensation for non-volatile storage
|
US7732275B2
(en)
*
|
2007-03-29 |
2010-06-08 |
Sandisk Corporation |
Methods of forming NAND flash memory with fixed charge
|
US7495282B2
(en)
*
|
2007-01-12 |
2009-02-24 |
Sandisk Corporation |
NAND memory with virtual channel
|
WO2008088654A1
(en)
*
|
2007-01-12 |
2008-07-24 |
Sandisk Corporation |
Nand memory with dual control gates having fixed charge layer below control gates
|
US7619926B2
(en)
*
|
2007-03-29 |
2009-11-17 |
Sandisk Corporation |
NAND flash memory with fixed charge
|
US7773403B2
(en)
*
|
2007-01-15 |
2010-08-10 |
Sandisk Corporation |
Spacer patterns using assist layer for high density semiconductor devices
|
US7795080B2
(en)
*
|
2007-01-15 |
2010-09-14 |
Sandisk Corporation |
Methods of forming integrated circuit devices using composite spacer structures
|
US7592225B2
(en)
*
|
2007-01-15 |
2009-09-22 |
Sandisk Corporation |
Methods of forming spacer patterns using assist layer for high density semiconductor devices
|
WO2008089153A2
(en)
*
|
2007-01-15 |
2008-07-24 |
Sandisk Corporation |
Methods of forming spacer patterns using assist layer for high density semiconductor devices
|
US7535764B2
(en)
*
|
2007-03-21 |
2009-05-19 |
Sandisk Corporation |
Adjusting resistance of non-volatile memory using dummy memory cells
|
US7745285B2
(en)
*
|
2007-03-30 |
2010-06-29 |
Sandisk Corporation |
Methods of forming and operating NAND memory with side-tunneling
|
US7512005B2
(en)
*
|
2007-03-30 |
2009-03-31 |
Sandisk Corporation |
NAND memory with side-tunneling
|
US7592223B2
(en)
*
|
2007-04-02 |
2009-09-22 |
Sandisk Corporation |
Methods of fabricating non-volatile memory with integrated select and peripheral circuitry and post-isolation memory cell formation
|
US7704832B2
(en)
*
|
2007-04-02 |
2010-04-27 |
Sandisk Corporation |
Integrated non-volatile memory and peripheral circuitry fabrication
|
US8779495B2
(en)
*
|
2007-04-19 |
2014-07-15 |
Qimonda Ag |
Stacked SONOS memory
|
US7923373B2
(en)
|
2007-06-04 |
2011-04-12 |
Micron Technology, Inc. |
Pitch multiplication using self-assembling materials
|
US8143156B2
(en)
*
|
2007-06-20 |
2012-03-27 |
Sandisk Technologies Inc. |
Methods of forming high density semiconductor devices using recursive spacer technique
|
US7808826B2
(en)
*
|
2007-06-25 |
2010-10-05 |
Sandisk Corporation |
Non-volatile storage with individually controllable shield plates between storage elements
|
US7781286B2
(en)
*
|
2007-06-25 |
2010-08-24 |
Sandisk Corporation |
Method for fabricating non-volatile storage with individually controllable shield plates between storage elements
|
US7636260B2
(en)
*
|
2007-06-25 |
2009-12-22 |
Sandisk Corporation |
Method for operating non-volatile storage with individually controllable shield plates between storage elements
|
KR100876892B1
(ko)
*
|
2007-06-29 |
2009-01-07 |
주식회사 하이닉스반도체 |
반도체 소자의 제조방법
|
US8247861B2
(en)
|
2007-07-18 |
2012-08-21 |
Infineon Technologies Ag |
Semiconductor device and method of making same
|
KR100902591B1
(ko)
|
2007-07-24 |
2009-06-11 |
주식회사 동부하이텍 |
반도체 메모리 소자의 제조 방법
|
US8563229B2
(en)
*
|
2007-07-31 |
2013-10-22 |
Micron Technology, Inc. |
Process of semiconductor fabrication with mask overlay on pitch multiplied features and associated structures
|
US20090039414A1
(en)
|
2007-08-09 |
2009-02-12 |
Macronix International Co., Ltd. |
Charge trapping memory cell with high speed erase
|
US7760547B2
(en)
*
|
2007-09-25 |
2010-07-20 |
Sandisk Corporation |
Offset non-volatile storage
|
US7894263B2
(en)
*
|
2007-09-28 |
2011-02-22 |
Sandisk Corporation |
High voltage generation and control in source-side injection programming of non-volatile memory
|
TW200919738A
(en)
*
|
2007-10-30 |
2009-05-01 |
Nanya Technology Corp |
Flash memory
|
US7737039B2
(en)
|
2007-11-01 |
2010-06-15 |
Micron Technology, Inc. |
Spacer process for on pitch contacts and related structures
|
US8072023B1
(en)
|
2007-11-12 |
2011-12-06 |
Marvell International Ltd. |
Isolation for non-volatile memory cell array
|
US7659208B2
(en)
|
2007-12-06 |
2010-02-09 |
Micron Technology, Inc |
Method for forming high density patterns
|
US8946803B2
(en)
*
|
2007-12-06 |
2015-02-03 |
Sandisk Technologies Inc. |
Method of forming a floating gate with a wide base and a narrow stem
|
US8120088B1
(en)
|
2007-12-07 |
2012-02-21 |
Marvell International Ltd. |
Non-volatile memory cell and array
|
US7790531B2
(en)
|
2007-12-18 |
2010-09-07 |
Micron Technology, Inc. |
Methods for isolating portions of a loop of pitch-multiplied material and related structures
|
US7615447B2
(en)
*
|
2007-12-19 |
2009-11-10 |
Sandisk Corporation |
Composite charge storage structure formation in non-volatile memory using etch stop technologies
|
US7807529B2
(en)
*
|
2007-12-19 |
2010-10-05 |
Sandisk Corporation |
Lithographically space-defined charge storage regions in non-volatile memory
|
US8546152B2
(en)
*
|
2007-12-19 |
2013-10-01 |
Sandisk Technologies Inc. |
Enhanced endpoint detection in non-volatile memory fabrication processes
|
US7888210B2
(en)
*
|
2007-12-19 |
2011-02-15 |
Sandisk Corporation |
Non-volatile memory fabrication and isolation for composite charge storage structures
|
DE102008003637B4
(de)
*
|
2008-01-09 |
2010-05-12 |
Qimonda Ag |
Integrierter Schaltkreis, Verfahren zum Programmieren einer Speicherzellen-Anordnung eines Integrierten Schaltkreises, und Speichermodul
|
US7736973B2
(en)
*
|
2008-01-25 |
2010-06-15 |
Sandisk Corporation |
Non-volatile memory arrays having dual control gate cell structures and a thick control gate dielectric and methods of forming
|
US8030218B2
(en)
|
2008-03-21 |
2011-10-04 |
Micron Technology, Inc. |
Method for selectively modifying spacing between pitch multiplied structures
|
JP5166095B2
(ja)
*
|
2008-03-31 |
2013-03-21 |
株式会社東芝 |
不揮発性半導体記憶装置の駆動方法及び不揮発性半導体記憶装置
|
US7915664B2
(en)
*
|
2008-04-17 |
2011-03-29 |
Sandisk Corporation |
Non-volatile memory with sidewall channels and raised source/drain regions
|
KR20090110172A
(ko)
*
|
2008-04-17 |
2009-10-21 |
삼성전자주식회사 |
반도체 소자의 미세 패턴 형성 방법
|
JP2009289902A
(ja)
|
2008-05-28 |
2009-12-10 |
Toshiba Corp |
Nand型フラッシュメモリおよびその製造方法
|
US8076208B2
(en)
|
2008-07-03 |
2011-12-13 |
Micron Technology, Inc. |
Method for forming transistor with high breakdown voltage using pitch multiplication technique
|
US8492282B2
(en)
|
2008-11-24 |
2013-07-23 |
Micron Technology, Inc. |
Methods of forming a masking pattern for integrated circuits
|
JP4515538B1
(ja)
*
|
2008-12-08 |
2010-08-04 |
エンパイア テクノロジー ディベロップメント エルエルシー |
半導体記憶デバイスおよびその製造方法
|
JP5388600B2
(ja)
|
2009-01-22 |
2014-01-15 |
株式会社東芝 |
不揮発性半導体記憶装置の製造方法
|
EP2251907B1
(de)
*
|
2009-05-14 |
2015-12-02 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Halbleiterspeichervorrichtung und Herstellungsverfahren
|
US20100322006A1
(en)
*
|
2009-06-22 |
2010-12-23 |
Ming Sang Kwan |
Nand memory cell string having a stacked select gate structure and process for for forming same
|
US10038004B2
(en)
|
2009-06-22 |
2018-07-31 |
Cypress Semiconductor Corporation |
NAND memory cell string having a stacked select gate structure and process for for forming same
|
US8328218B2
(en)
*
|
2009-07-13 |
2012-12-11 |
Columbia Cycle Works, LLC |
Commuter vehicle
|
JP2011040706A
(ja)
*
|
2009-07-15 |
2011-02-24 |
Toshiba Corp |
不揮発性半導体記憶装置
|
US8258034B2
(en)
*
|
2009-08-26 |
2012-09-04 |
Micron Technology, Inc. |
Charge-trap based memory
|
US9142262B2
(en)
|
2009-10-23 |
2015-09-22 |
Rambus Inc. |
Stacked semiconductor device
|
TWI460827B
(zh)
*
|
2010-03-31 |
2014-11-11 |
Taiwan Memory Company |
快閃記憶體之製作方法
|
US8274831B2
(en)
|
2010-05-24 |
2012-09-25 |
Sandisk Technologies Inc. |
Programming non-volatile storage with synchronized coupling
|
US9019767B2
(en)
*
|
2011-02-17 |
2015-04-28 |
SK Hynix Inc. |
Nonvolatile memory device and operating method thereof
|
JP5395837B2
(ja)
|
2011-03-24 |
2014-01-22 |
株式会社東芝 |
半導体装置の製造方法
|
US9240405B2
(en)
|
2011-04-19 |
2016-01-19 |
Macronix International Co., Ltd. |
Memory with off-chip controller
|
US20120327714A1
(en)
*
|
2011-06-23 |
2012-12-27 |
Macronix International Co., Ltd. |
Memory Architecture of 3D Array With Diode in Memory String
|
US8946806B2
(en)
*
|
2011-07-24 |
2015-02-03 |
Globalfoundries Singapore Pte. Ltd. |
Memory cell with decoupled channels
|
JP2013098216A
(ja)
*
|
2011-10-28 |
2013-05-20 |
Elpida Memory Inc |
半導体装置、メモリカード、データ処理システムおよび半導体装置の製造方法
|
US8837223B2
(en)
|
2011-11-21 |
2014-09-16 |
Kabushiki Kaisha Toshiba |
Nonvolatile semiconductor memory device and method for manufacuring the same
|
JP2013200924A
(ja)
*
|
2012-03-26 |
2013-10-03 |
Toshiba Corp |
不揮発性半導体記憶装置
|
JP2013196725A
(ja)
*
|
2012-03-19 |
2013-09-30 |
Toshiba Corp |
不揮発性半導体記憶装置
|
KR101809222B1
(ko)
|
2011-11-23 |
2017-12-19 |
에스케이하이닉스 주식회사 |
비휘발성 메모리 장치의 리드 방법
|
CN103794564B
(zh)
*
|
2012-10-26 |
2016-12-21 |
李迪 |
一种半导体结构及其制造方法
|
US9111591B2
(en)
*
|
2013-02-22 |
2015-08-18 |
Micron Technology, Inc. |
Interconnections for 3D memory
|
US9214351B2
(en)
|
2013-03-12 |
2015-12-15 |
Macronix International Co., Ltd. |
Memory architecture of thin film 3D array
|
US9123425B2
(en)
|
2013-04-02 |
2015-09-01 |
Sandisk Technologies Inc. |
Adjusting control gate overdrive of select gate transistors during programming of non-volatile memory
|
TWI512952B
(zh)
*
|
2013-05-06 |
2015-12-11 |
Macronix Int Co Ltd |
記憶元件及其製造方法
|
CN104810364B
(zh)
*
|
2014-01-26 |
2018-03-30 |
中芯国际集成电路制造(上海)有限公司 |
一种集成电路及其制造方法
|
US9524779B2
(en)
|
2014-06-24 |
2016-12-20 |
Sandisk Technologies Llc |
Three dimensional vertical NAND device with floating gates
|
US9449971B2
(en)
*
|
2014-12-01 |
2016-09-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods of forming FinFETs
|
US9349952B1
(en)
|
2014-12-08 |
2016-05-24 |
Sony Corporation |
Methods for fabricating a memory device with an enlarged space between neighboring bottom electrodes
|
US9711228B1
(en)
*
|
2016-05-27 |
2017-07-18 |
Micron Technology, Inc. |
Apparatus and methods of operating memory with erase de-bias
|
US10860923B2
(en)
|
2016-12-20 |
2020-12-08 |
Samsung Electronics Co., Ltd. |
High-density neuromorphic computing element
|
US10176870B1
(en)
|
2017-07-05 |
2019-01-08 |
Micron Technology, Inc. |
Multifunctional memory cells
|
US10262736B2
(en)
|
2017-07-05 |
2019-04-16 |
Micron Technology, Inc. |
Multifunctional memory cells
|
KR102422839B1
(ko)
*
|
2018-02-23 |
2022-07-19 |
에스케이하이닉스 시스템아이씨 주식회사 |
수평 커플링 구조 및 단일층 게이트를 갖는 불휘발성 메모리 소자
|
US10622073B2
(en)
*
|
2018-05-11 |
2020-04-14 |
Texas Instruments Incorporated |
Integrated circuit including vertical capacitors
|
US10559582B2
(en)
*
|
2018-06-04 |
2020-02-11 |
Sandisk Technologies Llc |
Three-dimensional memory device containing source contact to bottom of vertical channels and method of making the same
|
CN110610942B
(zh)
*
|
2018-06-15 |
2023-07-28 |
硅存储技术公司 |
用于减少闪存存储器系统中字线和控制栅极线之间的耦合的方法和装置
|
CN110718256B
(zh)
*
|
2018-07-13 |
2021-07-09 |
西安格易安创集成电路有限公司 |
一种非易失存储器处理电路及方法
|
EP3985727A1
(de)
*
|
2020-10-19 |
2022-04-20 |
STMicroelectronics (Rousset) SAS |
Mos-transistor, der vom substrat eines integrierten schaltkreises isoliert ist, und anwendung zur erkennung der öffnung eines geschlossenen behälters
|
US11545220B2
(en)
|
2020-12-29 |
2023-01-03 |
Micron Technology, Inc. |
Split-gate memory cells
|
JP2022159956A
(ja)
|
2021-04-05 |
2022-10-18 |
キオクシア株式会社 |
半導体記憶装置
|