CN1244955C - 半导体器件的制造方法和退火装置 - Google Patents

半导体器件的制造方法和退火装置 Download PDF

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Publication number
CN1244955C
CN1244955C CNB031460852A CN03146085A CN1244955C CN 1244955 C CN1244955 C CN 1244955C CN B031460852 A CNB031460852 A CN B031460852A CN 03146085 A CN03146085 A CN 03146085A CN 1244955 C CN1244955 C CN 1244955C
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CN
China
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mentioned
heat treatment
semiconductor device
manufacture method
annealing
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Expired - Lifetime
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CNB031460852A
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English (en)
Chinese (zh)
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CN1472780A (zh
Inventor
伊藤贵之
须黑恭一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japanese Businessman Panjaya Co ltd
Kioxia Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB031460852A 2002-07-25 2003-07-21 半导体器件的制造方法和退火装置 Expired - Lifetime CN1244955C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002216807A JP3699946B2 (ja) 2002-07-25 2002-07-25 半導体装置の製造方法
JP216807/2002 2002-07-25

Publications (2)

Publication Number Publication Date
CN1472780A CN1472780A (zh) 2004-02-04
CN1244955C true CN1244955C (zh) 2006-03-08

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Family Applications (1)

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CNB031460852A Expired - Lifetime CN1244955C (zh) 2002-07-25 2003-07-21 半导体器件的制造方法和退火装置

Country Status (5)

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US (2) US6770519B2 (enExample)
JP (1) JP3699946B2 (enExample)
KR (1) KR100535847B1 (enExample)
CN (1) CN1244955C (enExample)
TW (1) TWI225712B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN101740391B (zh) * 2008-11-17 2011-08-17 中芯国际集成电路制造(上海)有限公司 Nmos晶体管的制作方法

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JP2009188210A (ja) * 2008-02-06 2009-08-20 Panasonic Corp 不純物活性化熱処理方法及び熱処理装置
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JP5401803B2 (ja) * 2008-02-22 2014-01-29 富士通セミコンダクター株式会社 半導体装置の製造方法
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JP2010141103A (ja) * 2008-12-11 2010-06-24 Toshiba Corp 半導体装置の製造方法および熱処理装置
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
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CN102741982B (zh) * 2010-02-04 2015-07-15 富士电机株式会社 用于制造半导体器件的方法
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CN103915388B (zh) * 2013-01-08 2016-05-25 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN103094216A (zh) * 2013-01-11 2013-05-08 无锡华润上华科技有限公司 一种nor闪存器件的退火工艺及nor闪存器件
JP6087874B2 (ja) * 2014-08-11 2017-03-01 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP6598630B2 (ja) * 2015-10-22 2019-10-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
JP6839939B2 (ja) * 2016-07-26 2021-03-10 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
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JP6768481B2 (ja) * 2016-12-12 2020-10-14 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法
JP7038558B2 (ja) 2018-02-05 2022-03-18 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
JP7032947B2 (ja) * 2018-02-13 2022-03-09 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
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CN114242571B (zh) * 2021-12-09 2025-07-04 全球能源互联网研究院有限公司 一种半导体结构的制备方法
CN116190234A (zh) * 2022-09-08 2023-05-30 华虹半导体(无锡)有限公司 一种多晶硅耗尽效应的改善方法

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Publication number Priority date Publication date Assignee Title
CN101740391B (zh) * 2008-11-17 2011-08-17 中芯国际集成电路制造(上海)有限公司 Nmos晶体管的制作方法

Also Published As

Publication number Publication date
US20040248351A1 (en) 2004-12-09
JP3699946B2 (ja) 2005-09-28
CN1472780A (zh) 2004-02-04
KR20040010366A (ko) 2004-01-31
US6770519B2 (en) 2004-08-03
US20040018702A1 (en) 2004-01-29
JP2004063574A (ja) 2004-02-26
US7300832B2 (en) 2007-11-27
TWI225712B (en) 2004-12-21
KR100535847B1 (ko) 2005-12-12
TW200405572A (en) 2004-04-01

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C06 Publication
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GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20170804

Address after: Tokyo, Japan

Patentee after: TOSHIBA MEMORY Corp.

Address before: Tokyo, Japan

Patentee before: Toshiba Corp.

TR01 Transfer of patent right
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan

Patentee after: TOSHIBA MEMORY Corp.

Address before: Tokyo, Japan

Patentee before: Japanese businessman Panjaya Co.,Ltd.

Address after: Tokyo, Japan

Patentee after: Kaixia Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: TOSHIBA MEMORY Corp.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20211013

Address after: Tokyo, Japan

Patentee after: Japanese businessman Panjaya Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: TOSHIBA MEMORY Corp.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20060308