JP3699946B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP3699946B2
JP3699946B2 JP2002216807A JP2002216807A JP3699946B2 JP 3699946 B2 JP3699946 B2 JP 3699946B2 JP 2002216807 A JP2002216807 A JP 2002216807A JP 2002216807 A JP2002216807 A JP 2002216807A JP 3699946 B2 JP3699946 B2 JP 3699946B2
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Japan
Prior art keywords
annealing
gate electrode
impurity
heat treatment
flash lamp
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Expired - Lifetime
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JP2002216807A
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English (en)
Japanese (ja)
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JP2004063574A (ja
JP2004063574A5 (enExample
Inventor
貴之 伊藤
恭一 須黒
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002216807A priority Critical patent/JP3699946B2/ja
Priority to US10/263,273 priority patent/US6770519B2/en
Priority to TW092119564A priority patent/TWI225712B/zh
Priority to CNB031460852A priority patent/CN1244955C/zh
Priority to KR10-2003-0050918A priority patent/KR100535847B1/ko
Publication of JP2004063574A publication Critical patent/JP2004063574A/ja
Priority to US10/867,766 priority patent/US7300832B2/en
Publication of JP2004063574A5 publication Critical patent/JP2004063574A5/ja
Application granted granted Critical
Publication of JP3699946B2 publication Critical patent/JP3699946B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2002216807A 2002-07-25 2002-07-25 半導体装置の製造方法 Expired - Lifetime JP3699946B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002216807A JP3699946B2 (ja) 2002-07-25 2002-07-25 半導体装置の製造方法
US10/263,273 US6770519B2 (en) 2002-07-25 2002-10-03 Semiconductor manufacturing method using two-stage annealing
TW092119564A TWI225712B (en) 2002-07-25 2003-07-17 Semiconductor manufacturing method and annealing device
CNB031460852A CN1244955C (zh) 2002-07-25 2003-07-21 半导体器件的制造方法和退火装置
KR10-2003-0050918A KR100535847B1 (ko) 2002-07-25 2003-07-24 반도체 장치의 제조 방법 및 어닐링 장치
US10/867,766 US7300832B2 (en) 2002-07-25 2004-06-16 Semiconductor manufacturing method using two-stage annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002216807A JP3699946B2 (ja) 2002-07-25 2002-07-25 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005120238A Division JP4372041B2 (ja) 2005-04-18 2005-04-18 半導体装置の製造方法およびアニール装置

Publications (3)

Publication Number Publication Date
JP2004063574A JP2004063574A (ja) 2004-02-26
JP2004063574A5 JP2004063574A5 (enExample) 2004-12-16
JP3699946B2 true JP3699946B2 (ja) 2005-09-28

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Family Applications (1)

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JP2002216807A Expired - Lifetime JP3699946B2 (ja) 2002-07-25 2002-07-25 半導体装置の製造方法

Country Status (5)

Country Link
US (2) US6770519B2 (enExample)
JP (1) JP3699946B2 (enExample)
KR (1) KR100535847B1 (enExample)
CN (1) CN1244955C (enExample)
TW (1) TWI225712B (enExample)

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* Cited by examiner, † Cited by third party
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US8017528B2 (en) 2008-02-06 2011-09-13 Panasonic Corporation Impurity-activating thermal process method and thermal process apparatus

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JP4733912B2 (ja) 2003-04-03 2011-07-27 株式会社東芝 半導体装置の製造方法
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JP2007220755A (ja) 2006-02-14 2007-08-30 Toshiba Corp 半導体装置及びその製造方法
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US7981212B2 (en) * 2006-03-29 2011-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Flash lamp annealing device
JP2008108891A (ja) 2006-10-25 2008-05-08 Toshiba Corp 半導体装置の製造方法
US7629275B2 (en) * 2007-01-25 2009-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-time flash anneal process
US20080268660A1 (en) * 2007-04-25 2008-10-30 Takaharu Itani Method of manufacturing semiconductor device
JP2009188210A (ja) * 2008-02-06 2009-08-20 Panasonic Corp 不純物活性化熱処理方法及び熱処理装置
JP5401803B2 (ja) * 2008-02-22 2014-01-29 富士通セミコンダクター株式会社 半導体装置の製造方法
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CN103094216A (zh) * 2013-01-11 2013-05-08 无锡华润上华科技有限公司 一种nor闪存器件的退火工艺及nor闪存器件
JP6087874B2 (ja) * 2014-08-11 2017-03-01 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP6598630B2 (ja) * 2015-10-22 2019-10-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
JP6839939B2 (ja) * 2016-07-26 2021-03-10 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
FR3055948B1 (fr) * 2016-09-15 2018-09-07 Valeo Vision Procede de montage d'un composant electroluminescent matriciel sur un support
JP6768481B2 (ja) * 2016-12-12 2020-10-14 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法
JP7038558B2 (ja) 2018-02-05 2022-03-18 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
JP7032947B2 (ja) * 2018-02-13 2022-03-09 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
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US8017528B2 (en) 2008-02-06 2011-09-13 Panasonic Corporation Impurity-activating thermal process method and thermal process apparatus

Also Published As

Publication number Publication date
US20040248351A1 (en) 2004-12-09
CN1472780A (zh) 2004-02-04
KR20040010366A (ko) 2004-01-31
US6770519B2 (en) 2004-08-03
US20040018702A1 (en) 2004-01-29
JP2004063574A (ja) 2004-02-26
US7300832B2 (en) 2007-11-27
CN1244955C (zh) 2006-03-08
TWI225712B (en) 2004-12-21
KR100535847B1 (ko) 2005-12-12
TW200405572A (en) 2004-04-01

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