KR100535847B1 - 반도체 장치의 제조 방법 및 어닐링 장치 - Google Patents

반도체 장치의 제조 방법 및 어닐링 장치 Download PDF

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Publication number
KR100535847B1
KR100535847B1 KR10-2003-0050918A KR20030050918A KR100535847B1 KR 100535847 B1 KR100535847 B1 KR 100535847B1 KR 20030050918 A KR20030050918 A KR 20030050918A KR 100535847 B1 KR100535847 B1 KR 100535847B1
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South Korea
Prior art keywords
heat treatment
gate electrode
annealing
ion implantation
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Expired - Lifetime
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KR10-2003-0050918A
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English (en)
Korean (ko)
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KR20040010366A (ko
Inventor
이또다까유끼
스구로교이찌
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가부시끼가이샤 도시바
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR10-2003-0050918A 2002-07-25 2003-07-24 반도체 장치의 제조 방법 및 어닐링 장치 Expired - Lifetime KR100535847B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00216807 2002-07-25
JP2002216807A JP3699946B2 (ja) 2002-07-25 2002-07-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20040010366A KR20040010366A (ko) 2004-01-31
KR100535847B1 true KR100535847B1 (ko) 2005-12-12

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KR10-2003-0050918A Expired - Lifetime KR100535847B1 (ko) 2002-07-25 2003-07-24 반도체 장치의 제조 방법 및 어닐링 장치

Country Status (5)

Country Link
US (2) US6770519B2 (enExample)
JP (1) JP3699946B2 (enExample)
KR (1) KR100535847B1 (enExample)
CN (1) CN1244955C (enExample)
TW (1) TWI225712B (enExample)

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JP2008108891A (ja) 2006-10-25 2008-05-08 Toshiba Corp 半導体装置の製造方法
US7629275B2 (en) * 2007-01-25 2009-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-time flash anneal process
US20080268660A1 (en) * 2007-04-25 2008-10-30 Takaharu Itani Method of manufacturing semiconductor device
JP2009188209A (ja) * 2008-02-06 2009-08-20 Panasonic Corp 不純物活性化熱処理方法及び熱処理装置
JP2009188210A (ja) * 2008-02-06 2009-08-20 Panasonic Corp 不純物活性化熱処理方法及び熱処理装置
JP5401803B2 (ja) * 2008-02-22 2014-01-29 富士通セミコンダクター株式会社 半導体装置の製造方法
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CN101740391B (zh) * 2008-11-17 2011-08-17 中芯国际集成电路制造(上海)有限公司 Nmos晶体管的制作方法
JP2010141103A (ja) * 2008-12-11 2010-06-24 Toshiba Corp 半導体装置の製造方法および熱処理装置
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
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CN102741982B (zh) * 2010-02-04 2015-07-15 富士电机株式会社 用于制造半导体器件的方法
US8466018B2 (en) * 2011-07-26 2013-06-18 Globalfoundries Inc. Methods of forming a PMOS device with in situ doped epitaxial source/drain regions
CN103915388B (zh) * 2013-01-08 2016-05-25 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN103094216A (zh) * 2013-01-11 2013-05-08 无锡华润上华科技有限公司 一种nor闪存器件的退火工艺及nor闪存器件
JP6087874B2 (ja) * 2014-08-11 2017-03-01 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP6598630B2 (ja) * 2015-10-22 2019-10-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
JP6839939B2 (ja) * 2016-07-26 2021-03-10 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
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JP6768481B2 (ja) * 2016-12-12 2020-10-14 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法
JP7038558B2 (ja) * 2018-02-05 2022-03-18 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
JP7032947B2 (ja) 2018-02-13 2022-03-09 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
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CN114242571B (zh) * 2021-12-09 2025-07-04 全球能源互联网研究院有限公司 一种半导体结构的制备方法
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Also Published As

Publication number Publication date
CN1472780A (zh) 2004-02-04
US20040248351A1 (en) 2004-12-09
TW200405572A (en) 2004-04-01
KR20040010366A (ko) 2004-01-31
US6770519B2 (en) 2004-08-03
JP3699946B2 (ja) 2005-09-28
JP2004063574A (ja) 2004-02-26
US20040018702A1 (en) 2004-01-29
CN1244955C (zh) 2006-03-08
US7300832B2 (en) 2007-11-27
TWI225712B (en) 2004-12-21

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