TWI225712B - Semiconductor manufacturing method and annealing device - Google Patents
Semiconductor manufacturing method and annealing device Download PDFInfo
- Publication number
- TWI225712B TWI225712B TW092119564A TW92119564A TWI225712B TW I225712 B TWI225712 B TW I225712B TW 092119564 A TW092119564 A TW 092119564A TW 92119564 A TW92119564 A TW 92119564A TW I225712 B TWI225712 B TW I225712B
- Authority
- TW
- Taiwan
- Prior art keywords
- heat treatment
- manufacturing
- semiconductor device
- annealing
- gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- 238000000137 annealing Methods 0.000 title claims description 116
- 238000010438 heat treatment Methods 0.000 claims abstract description 118
- 239000012535 impurity Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 239000002344 surface layer Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 84
- 230000008569 process Effects 0.000 claims description 45
- 238000005468 ion implantation Methods 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 229910052778 Plutonium Inorganic materials 0.000 claims description 2
- 238000005485 electric heating Methods 0.000 claims description 2
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 42
- 239000010410 layer Substances 0.000 abstract description 25
- 239000002019 doping agent Substances 0.000 abstract 2
- 230000000052 comparative effect Effects 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 229910052736 halogen Inorganic materials 0.000 description 9
- 150000002367 halogens Chemical class 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000001994 activation Methods 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 240000007154 Coffea arabica Species 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 241000233805 Phoenix Species 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 235000016213 coffee Nutrition 0.000 description 1
- 235000013353 coffee beverage Nutrition 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002216807A JP3699946B2 (ja) | 2002-07-25 | 2002-07-25 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200405572A TW200405572A (en) | 2004-04-01 |
| TWI225712B true TWI225712B (en) | 2004-12-21 |
Family
ID=30437651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092119564A TWI225712B (en) | 2002-07-25 | 2003-07-17 | Semiconductor manufacturing method and annealing device |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6770519B2 (enExample) |
| JP (1) | JP3699946B2 (enExample) |
| KR (1) | KR100535847B1 (enExample) |
| CN (1) | CN1244955C (enExample) |
| TW (1) | TWI225712B (enExample) |
Families Citing this family (53)
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| US7255899B2 (en) * | 2001-11-12 | 2007-08-14 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and heat treatment method of substrate |
| JP4063050B2 (ja) * | 2002-10-31 | 2008-03-19 | 豊田合成株式会社 | ｐ型ＩＩＩ族窒化物系化合物半導体の電極およびその製造方法 |
| JP4258631B2 (ja) * | 2002-12-03 | 2009-04-30 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスクの製造方法 |
| JP4733912B2 (ja) | 2003-04-03 | 2011-07-27 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2004356431A (ja) * | 2003-05-29 | 2004-12-16 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2005142344A (ja) * | 2003-11-06 | 2005-06-02 | Toshiba Corp | 半導体装置の製造方法および半導体製造装置 |
| JP4342429B2 (ja) * | 2004-02-09 | 2009-10-14 | 株式会社東芝 | 半導体装置の製造方法 |
| US7078302B2 (en) * | 2004-02-23 | 2006-07-18 | Applied Materials, Inc. | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal |
| US7501332B2 (en) * | 2004-04-05 | 2009-03-10 | Kabushiki Kaisha Toshiba | Doping method and manufacturing method for a semiconductor device |
| JP4594664B2 (ja) | 2004-07-07 | 2010-12-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| KR100629266B1 (ko) | 2004-08-09 | 2006-09-29 | 삼성전자주식회사 | 샐리사이드 공정 및 이를 사용한 반도체 소자의 제조방법 |
| JP2006060156A (ja) * | 2004-08-24 | 2006-03-02 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US20060068556A1 (en) * | 2004-09-27 | 2006-03-30 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| JP4795759B2 (ja) * | 2005-03-03 | 2011-10-19 | ルネサスエレクトロニクス株式会社 | 電界効果型トランジスタの製造方法 |
| US7259075B2 (en) | 2005-03-03 | 2007-08-21 | Nec Electronics Corporation | Method for manufacturing field effect transistor |
| JP2006245338A (ja) * | 2005-03-03 | 2006-09-14 | Nec Electronics Corp | 電界効果型トランジスタの製造方法 |
| JP4825459B2 (ja) * | 2005-06-28 | 2011-11-30 | 株式会社東芝 | 熱処理装置、熱処理方法及び半導体装置の製造方法 |
| JP2007035984A (ja) * | 2005-07-28 | 2007-02-08 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
| WO2007035660A1 (en) * | 2005-09-20 | 2007-03-29 | Applied Materials, Inc. | Method to form a device on a soi substrate |
| US20070072382A1 (en) * | 2005-09-28 | 2007-03-29 | Fujitsu Limited | Method of manufacturing semiconductor device |
| JP5135743B2 (ja) * | 2005-09-28 | 2013-02-06 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| KR100720484B1 (ko) * | 2005-12-16 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 반도체 소자의 구조 및 그 제조 방법 |
| US20070145495A1 (en) * | 2005-12-27 | 2007-06-28 | Intel Corporation | Method of fabricating a MOSFET transistor having an anti-halo for modifying narrow width device performance |
| JP2007220755A (ja) | 2006-02-14 | 2007-08-30 | Toshiba Corp | 半導体装置及びその製造方法 |
| US7795122B2 (en) * | 2006-03-20 | 2010-09-14 | Texas Instruments Incorporated | Antimony ion implantation for semiconductor components |
| US7981212B2 (en) * | 2006-03-29 | 2011-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Flash lamp annealing device |
| JP2008108891A (ja) | 2006-10-25 | 2008-05-08 | Toshiba Corp | 半導体装置の製造方法 |
| US7629275B2 (en) * | 2007-01-25 | 2009-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-time flash anneal process |
| US20080268660A1 (en) * | 2007-04-25 | 2008-10-30 | Takaharu Itani | Method of manufacturing semiconductor device |
| JP2009188210A (ja) * | 2008-02-06 | 2009-08-20 | Panasonic Corp | 不純物活性化熱処理方法及び熱処理装置 |
| JP2009188209A (ja) | 2008-02-06 | 2009-08-20 | Panasonic Corp | 不純物活性化熱処理方法及び熱処理装置 |
| JP5401803B2 (ja) * | 2008-02-22 | 2014-01-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| JP2010021525A (ja) | 2008-06-13 | 2010-01-28 | Toshiba Corp | 半導体装置の製造方法 |
| CN101740391B (zh) * | 2008-11-17 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Nmos晶体管的制作方法 |
| JP2010141103A (ja) * | 2008-12-11 | 2010-06-24 | Toshiba Corp | 半導体装置の製造方法および熱処理装置 |
| US10060180B2 (en) | 2010-01-16 | 2018-08-28 | Cardinal Cg Company | Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology |
| US10000965B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductive coating technology |
| US10000411B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductivity and low emissivity coating technology |
| CN102741982B (zh) * | 2010-02-04 | 2015-07-15 | 富士电机株式会社 | 用于制造半导体器件的方法 |
| US8466018B2 (en) * | 2011-07-26 | 2013-06-18 | Globalfoundries Inc. | Methods of forming a PMOS device with in situ doped epitaxial source/drain regions |
| CN103915388B (zh) * | 2013-01-08 | 2016-05-25 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
| CN103094216A (zh) * | 2013-01-11 | 2013-05-08 | 无锡华润上华科技有限公司 | 一种nor闪存器件的退火工艺及nor闪存器件 |
| JP6087874B2 (ja) * | 2014-08-11 | 2017-03-01 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法および熱処理装置 |
| JP6598630B2 (ja) * | 2015-10-22 | 2019-10-30 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法 |
| JP6839939B2 (ja) * | 2016-07-26 | 2021-03-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法 |
| FR3055948B1 (fr) * | 2016-09-15 | 2018-09-07 | Valeo Vision | Procede de montage d'un composant electroluminescent matriciel sur un support |
| JP6768481B2 (ja) * | 2016-12-12 | 2020-10-14 | 株式会社Ｓｃｒｅｅｎホールディングス | ドーパント導入方法および熱処理方法 |
| JP7038558B2 (ja) | 2018-02-05 | 2022-03-18 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法 |
| JP7032947B2 (ja) * | 2018-02-13 | 2022-03-09 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法 |
| US11028012B2 (en) | 2018-10-31 | 2021-06-08 | Cardinal Cg Company | Low solar heat gain coatings, laminated glass assemblies, and methods of producing same |
| CN111106012B (zh) * | 2019-12-20 | 2022-05-17 | 电子科技大学 | 一种实现半导体器件局域寿命控制的方法 |
| CN114242571B (zh) * | 2021-12-09 | 2025-07-04 | 全球能源互联网研究院有限公司 | 一种半导体结构的制备方法 |
| CN116190234A (zh) * | 2022-09-08 | 2023-05-30 | 华虹半导体(无锡)有限公司 | 一种多晶硅耗尽效应的改善方法 |
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| JP3190653B2 (ja) | 1989-05-09 | 2001-07-23 | ソニー株式会社 | アニール方法およびアニール装置 |
| JP3518122B2 (ja) | 1996-01-12 | 2004-04-12 | ソニー株式会社 | 半導体装置の製造方法 |
| JP3516424B2 (ja) * | 1996-03-10 | 2004-04-05 | 株式会社半導体エネルギー研究所 | 薄膜半導体装置 |
| US5817536A (en) * | 1996-03-25 | 1998-10-06 | Advanced Micro Devices, Inc. | Method to optimize p-channel CMOS ICs using Qbd as a monitor of boron penetration |
| JP3336604B2 (ja) | 1996-12-13 | 2002-10-21 | ソニー株式会社 | 半導体装置の製造方法 |
| US5874344A (en) * | 1996-12-30 | 1999-02-23 | Intel Corporation | Two step source/drain anneal to prevent dopant evaporation |
| KR100231607B1 (ko) * | 1996-12-31 | 1999-11-15 | 김영환 | 반도체 소자의 초저접합 형성방법 |
| US5837572A (en) * | 1997-01-10 | 1998-11-17 | Advanced Micro Devices, Inc. | CMOS integrated circuit formed by using removable spacers to produce asymmetrical NMOS junctions before asymmetrical PMOS junctions for optimizing thermal diffusivity of dopants implanted therein |
| US6569716B1 (en) * | 1997-02-24 | 2003-05-27 | Sanyo Electric Co., Ltd. | Method of manufacturing a polycrystalline silicon film and thin film transistor using lamp and laser anneal |
| JPH10256538A (ja) | 1997-03-07 | 1998-09-25 | Sony Corp | 半導体装置の製造方法 |
| US5981347A (en) * | 1997-10-14 | 1999-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple thermal annealing method for a metal oxide semiconductor field effect transistor with enhanced hot carrier effect (HCE) resistance |
| US6207591B1 (en) | 1997-11-14 | 2001-03-27 | Kabushiki Kaisha Toshiba | Method and equipment for manufacturing semiconductor device |
| US6271101B1 (en) * | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
| US6117737A (en) * | 1999-02-08 | 2000-09-12 | Taiwan Semiconductor Manufacturing Company | Reduction of a hot carrier effect by an additional furnace anneal increasing transient enhanced diffusion for devices comprised with low temperature spacers |
| US6218250B1 (en) * | 1999-06-02 | 2001-04-17 | Advanced Micro Devices, Inc. | Method and apparatus for minimizing parasitic resistance of semiconductor devices |
| JP2002141298A (ja) | 2000-11-02 | 2002-05-17 | Toshiba Corp | 半導体装置の製造方法 |
| JP2002246310A (ja) * | 2001-02-14 | 2002-08-30 | Sony Corp | 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
| US6642122B1 (en) * | 2002-09-26 | 2003-11-04 | Advanced Micro Devices, Inc. | Dual laser anneal for graded halo profile |
| JP2004356431A (ja) * | 2003-05-29 | 2004-12-16 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
-
2002
- 2002-07-25 JP JP2002216807A patent/JP3699946B2/ja not_active Expired - Lifetime
- 2002-10-03 US US10/263,273 patent/US6770519B2/en not_active Expired - Lifetime
-
2003
- 2003-07-17 TW TW092119564A patent/TWI225712B/zh not_active IP Right Cessation
- 2003-07-21 CN CNB031460852A patent/CN1244955C/zh not_active Expired - Lifetime
- 2003-07-24 KR KR10-2003-0050918A patent/KR100535847B1/ko not_active Expired - Lifetime
-
2004
- 2004-06-16 US US10/867,766 patent/US7300832B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20040248351A1 (en) | 2004-12-09 |
| JP3699946B2 (ja) | 2005-09-28 |
| CN1472780A (zh) | 2004-02-04 |
| KR20040010366A (ko) | 2004-01-31 |
| US6770519B2 (en) | 2004-08-03 |
| US20040018702A1 (en) | 2004-01-29 |
| JP2004063574A (ja) | 2004-02-26 |
| US7300832B2 (en) | 2007-11-27 |
| CN1244955C (zh) | 2006-03-08 |
| KR100535847B1 (ko) | 2005-12-12 |
| TW200405572A (en) | 2004-04-01 |
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