CN1253929C - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN1253929C CN1253929C CNB2004100015624A CN200410001562A CN1253929C CN 1253929 C CN1253929 C CN 1253929C CN B2004100015624 A CNB2004100015624 A CN B2004100015624A CN 200410001562 A CN200410001562 A CN 200410001562A CN 1253929 C CN1253929 C CN 1253929C
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- fluorine
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- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 218
- 238000000034 method Methods 0.000 title claims description 87
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 115
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 112
- 239000011737 fluorine Substances 0.000 claims abstract description 112
- 229910052796 boron Inorganic materials 0.000 claims abstract description 105
- 239000012535 impurity Substances 0.000 claims abstract description 101
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 95
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 16
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims description 158
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- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 116
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
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- 238000004151 rapid thermal annealing Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 78
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 33
- 239000000203 mixture Substances 0.000 description 32
- 229910052814 silicon oxide Inorganic materials 0.000 description 32
- 229910052581 Si3N4 Inorganic materials 0.000 description 27
- 238000009826 distribution Methods 0.000 description 24
- 238000000137 annealing Methods 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 18
- 229920005591 polysilicon Polymers 0.000 description 18
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- -1 boron ion Chemical class 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000010792 warming Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
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- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 230000004913 activation Effects 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 6
- 230000001052 transient effect Effects 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 230000002547 anomalous effect Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 230000009849 deactivation Effects 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Abstract
Description
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003056860 | 2003-03-04 | ||
JP2003056860 | 2003-03-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1527368A CN1527368A (zh) | 2004-09-08 |
CN1253929C true CN1253929C (zh) | 2006-04-26 |
Family
ID=32821172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100015624A Expired - Lifetime CN1253929C (zh) | 2003-03-04 | 2004-01-13 | 半导体装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7138322B2 (zh) |
EP (1) | EP1455386A3 (zh) |
CN (1) | CN1253929C (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6808997B2 (en) * | 2003-03-21 | 2004-10-26 | Texas Instruments Incorporated | Complementary junction-narrowing implants for ultra-shallow junctions |
US20040188774A1 (en) * | 2003-03-31 | 2004-09-30 | Sanyo Electric Co., Ltd. | Semiconductor device and method of fabricating semiconductor device |
US7491616B2 (en) * | 2004-03-15 | 2009-02-17 | Nxp B.V. | Method of manufacturing a semiconductor device including dopant introduction |
US20060113591A1 (en) * | 2004-11-30 | 2006-06-01 | Chih-Hao Wan | High performance CMOS devices and methods for making same |
KR20060076011A (ko) * | 2004-12-29 | 2006-07-04 | 삼성전자주식회사 | 반도체 소자 및 그 형성 방법 |
US20070037326A1 (en) * | 2005-08-09 | 2007-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Shallow source/drain regions for CMOS transistors |
US8076228B2 (en) * | 2007-01-29 | 2011-12-13 | Infineon Technologies Ag | Low noise transistor and method of making same |
US20090065820A1 (en) * | 2007-09-06 | 2009-03-12 | Lu-Yang Kao | Method and structure for simultaneously fabricating selective film and spacer |
CN101459082B (zh) * | 2007-12-13 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Mos晶体管及其形成方法 |
JP5235486B2 (ja) * | 2008-05-07 | 2013-07-10 | パナソニック株式会社 | 半導体装置 |
US8232605B2 (en) * | 2008-12-17 | 2012-07-31 | United Microelectronics Corp. | Method for gate leakage reduction and Vt shift control and complementary metal-oxide-semiconductor device |
US7994016B2 (en) * | 2009-11-11 | 2011-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for obtaining quality ultra-shallow doped regions and device having same |
CN102569077B (zh) * | 2010-12-15 | 2015-07-08 | 中芯国际集成电路制造(上海)有限公司 | 用于制作半导体器件的源/漏区的方法 |
CN103325684B (zh) | 2012-03-23 | 2016-03-02 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
US9184233B2 (en) * | 2013-02-27 | 2015-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for defect passivation to reduce junction leakage for finFET device |
CN104576384A (zh) * | 2013-10-14 | 2015-04-29 | 中国科学院微电子研究所 | 一种finfet结构及其制造方法 |
CN104201126B (zh) * | 2014-08-15 | 2017-12-22 | 上海华力微电子有限公司 | 末端射程损伤的检测以及修复方法 |
CN109037070A (zh) * | 2017-06-09 | 2018-12-18 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法及半导体器件 |
CN115732316A (zh) * | 2021-08-31 | 2023-03-03 | 长鑫存储技术有限公司 | 场效应晶体管形成方法、电性能参数调节方法及结构 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3052348B2 (ja) | 1990-07-30 | 2000-06-12 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP3379255B2 (ja) | 1994-12-27 | 2003-02-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US5966623A (en) * | 1995-10-25 | 1999-10-12 | Eastman Kodak Company | Metal impurity neutralization within semiconductors by fluorination |
US6069062A (en) | 1997-09-16 | 2000-05-30 | Varian Semiconductor Equipment Associates, Inc. | Methods for forming shallow junctions in semiconductor wafers |
US6455385B1 (en) * | 1998-01-07 | 2002-09-24 | Advanced Micro Devices, Inc. | Semiconductor fabrication with multiple low dose implant |
JP2000269492A (ja) * | 1999-03-16 | 2000-09-29 | Nec Corp | 半導体装置の製造方法 |
US6432802B1 (en) * | 1999-09-17 | 2002-08-13 | Matsushita Electronics Corporation | Method for fabricating semiconductor device |
JP4818499B2 (ja) | 2000-09-01 | 2011-11-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6437406B1 (en) * | 2000-10-19 | 2002-08-20 | International Business Machines Corporation | Super-halo formation in FETs |
US6808997B2 (en) * | 2003-03-21 | 2004-10-26 | Texas Instruments Incorporated | Complementary junction-narrowing implants for ultra-shallow junctions |
-
2004
- 2004-01-13 CN CNB2004100015624A patent/CN1253929C/zh not_active Expired - Lifetime
- 2004-02-03 EP EP04002341A patent/EP1455386A3/en not_active Withdrawn
- 2004-02-11 US US10/775,122 patent/US7138322B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040173843A1 (en) | 2004-09-09 |
US7138322B2 (en) | 2006-11-21 |
EP1455386A3 (en) | 2006-03-01 |
EP1455386A2 (en) | 2004-09-08 |
CN1527368A (zh) | 2004-09-08 |
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