JP5235486B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5235486B2 JP5235486B2 JP2008121176A JP2008121176A JP5235486B2 JP 5235486 B2 JP5235486 B2 JP 5235486B2 JP 2008121176 A JP2008121176 A JP 2008121176A JP 2008121176 A JP2008121176 A JP 2008121176A JP 5235486 B2 JP5235486 B2 JP 5235486B2
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- 239000004065 semiconductor Substances 0.000 title claims description 149
- 238000009792 diffusion process Methods 0.000 claims description 153
- 239000012535 impurity Substances 0.000 claims description 118
- 229910052799 carbon Inorganic materials 0.000 claims description 70
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 61
- 229910052731 fluorine Inorganic materials 0.000 claims description 43
- 239000011737 fluorine Substances 0.000 claims description 43
- 125000006850 spacer group Chemical group 0.000 claims description 33
- 229910052732 germanium Inorganic materials 0.000 claims description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 17
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 238000002513 implantation Methods 0.000 description 131
- 150000002500 ions Chemical class 0.000 description 73
- 239000000758 substrate Substances 0.000 description 67
- 230000015572 biosynthetic process Effects 0.000 description 54
- 229910052796 boron Inorganic materials 0.000 description 47
- 238000004519 manufacturing process Methods 0.000 description 45
- -1 boron ions Chemical class 0.000 description 44
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 41
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 33
- 238000000034 method Methods 0.000 description 32
- 238000005468 ion implantation Methods 0.000 description 31
- 238000010438 heat treatment Methods 0.000 description 30
- 229910052785 arsenic Inorganic materials 0.000 description 28
- 238000000137 annealing Methods 0.000 description 27
- 229910052698 phosphorus Inorganic materials 0.000 description 19
- 239000011574 phosphorus Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 17
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 230000007547 defect Effects 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 14
- 238000005224 laser annealing Methods 0.000 description 14
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 238000007669 thermal treatment Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 150000001793 charged compounds Chemical class 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 108091006146 Channels Proteins 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000001747 exhibiting effect Effects 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052743 krypton Inorganic materials 0.000 description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000005465 channeling Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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- High Energy & Nuclear Physics (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
本発明の第1の実施形態について図面を参照しながら説明する。
図2に本発明の第1の実施形態の一変形例に係る半導体装置の断面構成を示す。図2に示すように、本変形例に係る半導体装置は、第1のサイドウォール108A及び第2のサイドウォール108Bにフッ素を含む一方、P型ソース・ドレイン拡散層113には、フッ素(F)及び炭素(C)を含んでいる。
図7(a)〜図7(d)に第1の実施形態の半導体装置における製造方法の一変形例の要部の工程順の断面構成を示す。
以下、本発明の第2の実施形態について図面を参照しながら説明する。ここでは、第1の実施形態との相違点を製造方法により説明する。
以下、本発明の第3の実施形態について図面を参照しながら説明する。ここでは、第2の実施形態との相違点を製造方法により説明する。
101 ゲート絶縁膜
102 ゲート電極
103 N型チャネル拡散層
103A N型チャネル不純物注入層
104 N型ウェル
104A N型ウェル不純物注入層
106 P型エクステンション高濃度拡散層
106A 第1のP型不純物注入層
107 N型ポケット拡散層
107A N型ポケット不純物注入層
108A 第1のイドウォール
108B 第2のサイドウォール
109 オフセットスペーサ
110 アモルファス層
111A 炭素注入層
112 フッ素注入層
113 P型ソース・ドレイン拡散層
113A 第2のP型不純物注入層
Claims (6)
- 半導体領域の上に、ゲート絶縁膜を介在させて形成されたゲート電極と、
前記半導体領域における前記ゲート電極の両側方に形成され、第1導電型の第1の不純物がそれぞれ拡散してなるエクステンション拡散層と、
前記半導体領域における前記各エクステンション拡散層の外側で且つ接合深さが前記各エクステンション拡散層よりも深いソース・ドレイン拡散層とを備え、
前記エクステンション拡散層は、前記ゲート電極の両側方のうちのいずれか一方にのみ炭素を含むことを特徴とする半導体装置。 - 前記ソース・ドレイン拡散層は、フッ素を含むことを特徴とする請求項1に記載の半導体装置。
- 前記ゲート電極の側面上には、絶縁性を有するオフセットスペーサが形成され、該オフセットスペーサは、フッ素を含まないことを特徴とする請求項1又は2に記載の半導体装置。
- 前記エクステンション拡散層のうち、前記炭素を含むエクステンション拡散層上に形成された前記オフセットスペーサは、炭素を含むことを特徴とする請求項3に記載の半導体装置。
- 前記ゲート電極のゲート長方向の側面上には、前記オフセットスペーサを介在させた絶縁性を有するサイドウォールが形成され、該サイドウォールは、フッ素を含まないことを特徴とする請求項4に記載の半導体装置。
- 前記ソース・ドレイン拡散層には、ゲルマニウムが残存していることを特徴とする請求項1〜5のいずれか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008121176A JP5235486B2 (ja) | 2008-05-07 | 2008-05-07 | 半導体装置 |
US12/424,096 US8350342B2 (en) | 2008-05-07 | 2009-04-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008121176A JP5235486B2 (ja) | 2008-05-07 | 2008-05-07 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009272423A JP2009272423A (ja) | 2009-11-19 |
JP5235486B2 true JP5235486B2 (ja) | 2013-07-10 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008121176A Expired - Fee Related JP5235486B2 (ja) | 2008-05-07 | 2008-05-07 | 半導体装置 |
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US (1) | US8350342B2 (ja) |
JP (1) | JP5235486B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023135953A1 (ja) | 2022-01-11 | 2023-07-20 | パナソニックIpマネジメント株式会社 | 撮像装置 |
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JP2011129565A (ja) * | 2009-12-15 | 2011-06-30 | Elpida Memory Inc | 半導体装置およびその製造方法 |
JP5544880B2 (ja) * | 2009-12-28 | 2014-07-09 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5652939B2 (ja) * | 2010-07-07 | 2015-01-14 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2012073583A1 (en) * | 2010-12-03 | 2012-06-07 | Kabushiki Kaisha Toshiba | Method of forming an inpurity implantation layer |
US20120190216A1 (en) * | 2011-01-20 | 2012-07-26 | International Business Machines Corporation | Annealing techniques for high performance complementary metal oxide semiconductor (cmos) device fabrication |
KR101244768B1 (ko) * | 2011-05-04 | 2013-03-19 | 한국과학기술원 | 그래핀 게이트 전극을 이용한 비휘발성 메모리 소자 |
US8999861B1 (en) * | 2011-05-11 | 2015-04-07 | Suvolta, Inc. | Semiconductor structure with substitutional boron and method for fabrication thereof |
US8466530B2 (en) | 2011-06-30 | 2013-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Co-implant for backside illumination sensor |
US8987099B2 (en) * | 2011-12-20 | 2015-03-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for thermal treatment with epitaxial SiCP thermal stability improvement |
US9153662B2 (en) * | 2012-03-29 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOSFET with selective dopant deactivation underneath gate |
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CN100590887C (zh) * | 2003-01-31 | 2010-02-17 | 富士通微电子株式会社 | 半导体器件的制造方法 |
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JP2004289125A (ja) | 2003-03-04 | 2004-10-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2005136382A (ja) | 2003-10-09 | 2005-05-26 | Toshiba Corp | 半導体装置の製造方法 |
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CN100539187C (zh) * | 2006-09-30 | 2009-09-09 | 中芯国际集成电路制造(上海)有限公司 | 金属氧化物半导体器件及其制造方法 |
JP2008147548A (ja) * | 2006-12-13 | 2008-06-26 | Nec Electronics Corp | 半導体装置及び半導体装置の製造方法 |
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