JP5652939B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP5652939B2 JP5652939B2 JP2010154846A JP2010154846A JP5652939B2 JP 5652939 B2 JP5652939 B2 JP 5652939B2 JP 2010154846 A JP2010154846 A JP 2010154846A JP 2010154846 A JP2010154846 A JP 2010154846A JP 5652939 B2 JP5652939 B2 JP 5652939B2
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Description
図3は、閾値電圧Vthのランダムバラツキとチャネル注入のBドーズ量との関係を示すグラフである。縦軸は閾値電圧Vthのランダムバラツキ(標準偏差σ(Vth))、横軸はチャネル注入のBドーズ量(Channel Dose)をそれぞれ示している。また、図4は、閾値電圧Vthのランダムバラツキと閾値電圧Vthとの関係を示すグラフである。縦軸は閾値電圧Vthのランダムバラツキ(σ(Vth))、横軸は閾値電圧Vthをそれぞれ示している。両図において、菱形及びそれを結ぶ実線はハロー注入の際にC注入(ステップS41)を適用しなかった場合を示している。四角及びそれらを結ぶ破線はハロー注入の際にC注入(ステップS41)を適用した場合を示している。この製造方法において、各N型MOSトランジスタにおいて、プロセス条件は、チャネル注入のBドーズ量及びC注入の有無を除き同一条件である。また、評価したN型MOSトランジスタのサイズは、Lg(ゲート長)が60nm、Wg(ゲート幅)が100nmである。
本実施の形態は、ハロー注入工程又はチャネル注入工程にC注入を施すことでランダムバラツキを改善する手法と、ゲート絶縁膜形成工程にてHf等の添加により閾値電圧Vthを変化させる手法とを有機的に結合させた手法である。この手法によりランダムバラツキの改善を維持した状態で、C注入によりシフトした閾値電圧Vthを補って、トランジスタ特性を変動させないことを可能とした。
まず、半導体基板の表層における所定の領域に拡散層を形成する(ステップS1)。次に、閾値電圧Vthの制御のために、半導体基板の表層のチャネル領域10にチャネル(Channel)注入を施して、チャネル不純物領域15を形成する(ステップS2)。続いて、チャネル領域10上にSiON(酸化窒化シリコン)膜のゲート絶縁膜13を形成する(ステップS3)。このとき、ゲート絶縁膜はSiO2(酸化シリコン)膜でもよい。その後、Poly−Siによりゲート電極12を形成する(ステップS4)。次に、側壁絶縁膜14形成後、ゲート下のオーバーラップ調整(ショートチャネル効果改善)のために、ハロー(Halo)注入及び(Extension)注入を施す。すなわち、ハロー注入を施して、チャネル領域10の両端付近(半導体基板の内部)にハロー領域17を形成する(ステップS5)。更に、エクステンション注入を施して、チャネル領域10の両端付近(半導体基板の表層)にエクステンション領域16を形成する(ステップS6)。その後、サイドウォール19を形成した後(ステップS7)、ソース・ドレイン注入を施して、ソース・ドレイン領域11を形成する(ステップS8)。
図8は、閾値電圧Vth及び閾値電圧VthのランダムバラツキとC注入のエネルギとの関係を示すグラフである。左側の縦軸は閾値電圧Vth、右側の縦軸は閾値電圧Vthのランダムバラツキ(標準偏差σ(Vth))、横軸はC注入のエネルギ(Carbon Energy)をそれぞれ示している。また、図9は、閾値電圧Vth及び閾値電圧VthのランダムバラツキとC注入のCドーズ量との関係を示すグラフである。左側の縦軸は閾値電圧Vth、右側の縦軸は閾値電圧Vthのランダムバラツキ(σ(Vth))、横軸はC注入のCドーズ量をそれぞれ示している。両図において、菱形及びそれを結ぶ実線は閾値電圧Vthを示している。四角及びそれらを結ぶ破線は閾値電圧のランダムバラツキσ(Vth)を示している。この製造方法において、各N型MOSトランジスタでのプロセス条件は、C注入のCドーズ量を除き同一条件である。また、評価したN型MOSトランジスタのサイズは、Lg(ゲート長)が60nm、Wg(ゲート幅)が100nmである。
図12は、閾値電圧Vthとチャネル注入のBドーズ量との関係を示すグラフである。縦軸は閾値電圧Vth、横軸はチャネル注入のBドーズ量(Channel Dose)をそれぞれ示している。図13は、閾値電圧Vthのランダムバラツキとチャネル注入のBドーズ量との関係を示すグラフである。縦軸は閾値電圧Vthのランダムバラツキ(標準偏差σ(Vth))、横軸はチャネル注入のBドーズ量(Channel Dose)をそれぞれ示している。また、両図において、黒菱形及びそれを結ぶ実線はハロー注入の際にC注入(ステップS21)を適用せず、ゲート絶縁膜形成の際にHf膜形成(ステップS11)を適用しなかった場合を示している。白菱形及びそれを結ぶ破線はハロー注入の際にC注入(ステップS21)を適用したが、ゲート絶縁膜形成の際にHf膜形成(ステップS11)を適用しなかった場合を示している。白三角及びそれを結ぶ破線はハロー注入の際にC注入(ステップS21)を適用し、かつゲート絶縁膜形成の際にHf膜形成(ステップS11)を適用した場合を示している。この製造方法において、各N型MOSトランジスタにおいて、プロセス条件は、チャネル注入のBドーズ量及びC注入の有無を除き同一条件である。
ゲート形成工程(ステップS4)において、ゲート電極12として、ポリシリコンではなく、金属(メタルゲート)を用いることができる。
また、ハロー注入のB(Halo−B)の影響が軽減される長チャネル側を含めて考えた場合、チャネル側にC注入を施す方法が考えられる。図14は、本発明の実施の形態に係る半導体装置の製造方法を示す他のフロー図である。この場合では、図7の場合と比較して、チャネル注入工程(ステップS2)の直前において、チャネル領域10にC注入工程(ステップS21)を施す点で異なっている。チャネル注入工程の直前にC注入を施すことで、チャネル不純物領域15のBがチャネル領域10の表面へ偏析することを抑制できる。
10、20 チャネル領域
11、21 ソース・ドレイン領域
12、22 ゲート電極
13、23 ゲート絶縁膜
14、24 側壁絶縁膜
15、25 チャネル不純物領域
16、26 エクステンション領域
17、27 ハロー領域
18、28 内部
19、29 サイドウォール
Claims (12)
- 半導体基板の表層に形成されたチャネル領域と、
前記半導体基板の表層に形成され、前記チャネル領域の両端に形成されたエクステンション領域と、
前記エクステンション領域の下方に形成されたハロー領域と、
前記チャネル領域上に形成され、High−k材料が添加されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と
を具備し、
前記チャネル領域又は前記ハロー領域に炭素が注入され、
前記High−k材料の添加量は、前記炭素の注入による閾値電圧の低下量を、前記High−k材料を前記ゲート絶縁膜に添加することによる閾値電圧の上昇量により補うことができる添加量である
N型MOSFET。 - 請求項1に記載のN型MOSFETにおいて、
前記High−k材料は、Hfである
N型MOSFET。 - 請求項1又は2に記載のN型MOSFETにおいて、
前記チャネル領域又は前記ハロー領域に注入された炭素の濃度は、前記チャネル領域又は前記ハロー領域に注入されたP型不純物の濃度よりも高い
N型MOSFET。 - 請求項1乃至3のいずれか一項に記載のN型MOSFETにおいて、
前記チャネル領域又は前記ハロー領域に注入された炭素の濃度は、ランダムバラツキの低下が飽和する濃度以下である
N型MOSFET。 - 請求項1乃至4のいずれか一項に記載のN型MOSFETにおいて、
前記チャネル領域又は前記ハロー領域に注入される炭素のエネルギは、ランダムバラツキの低下が飽和するエネルギ以下である
N型MOSFET。 - 請求項1乃至5のいずれか一項に記載のN型MOSFETにおいて、
前記ゲート電極は金属で形成され、
前記High−k材料の添加量と、前記金属の種類とは、前記炭素の注入による閾値電圧の低下を、補うように選択される
N型MOSFET。 - 半導体基板の表層のチャネル領域にP型不純物を注入する工程と、
前記チャネル領域上に、High−k材料が添加されたゲート絶縁膜及びゲート電極を形成する工程と、
前記半導体基板の内部における前記チャネル領域の両端にP型不純物を注入してハロー領域を形成する工程と、
前記半導体基板の表層における前記チャネル領域の両端にN型不純物を注入してエクステンション領域を形成する工程と
を具備し、
前記チャネル領域を形成する工程、又は、前記ハロー領域を形成する工程は、P型不純物を注入する領域に炭素を注入する工程を含み、
前記High−k材料の添加量は、前記炭素の注入による閾値電圧の低下量を、前記High−k材料を前記ゲート絶縁膜に添加することによる閾値電圧の上昇量により補うことができる添加量である
N型MOSFETの製造方法。 - 請求項7に記載のN型MOSFETの製造方法において、
前記High−k材料は、Hfである
N型MOSFETの製造方法。 - 請求項7又は8に記載のN型MOSFETの製造方法において、
前記チャネル領域又は前記ハロー領域に注入された炭素の濃度は、前記チャネル領域又は前記ハロー領域に注入されたP型不純物の濃度よりも高い
N型MOSFETの製造方法。 - 請求項7乃至9のいずれか一項に記載のN型MOSFETの製造方法において、
前記チャネル領域又は前記ハロー領域に注入された炭素の濃度は、ランダムバラツキの低下が飽和する濃度以下である
N型MOSFETの製造方法。 - 請求項7乃至10のいずれか一項に記載のN型MOSFETの製造方法において、
前記チャネル領域又は前記ハロー領域に注入される炭素のエネルギは、ランダムバラツキの低下が飽和するエネルギ以下である
N型MOSFETの製造方法。 - 請求項7乃至11のいずれか一項に記載のN型MOSFETの製造方法において、
前記ゲート電極は金属で形成され、
前記High−k材料の添加量と、前記金属の種類とは、前記炭素の注入による閾値電圧の低下を、補うように選択される
N型MOSFETの製造方法。
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US9153662B2 (en) * | 2012-03-29 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOSFET with selective dopant deactivation underneath gate |
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US9093997B1 (en) | 2012-11-15 | 2015-07-28 | Mie Fujitsu Semiconductor Limited | Slew based process and bias monitors and related methods |
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