CN107170746B - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN107170746B CN107170746B CN201610575979.4A CN201610575979A CN107170746B CN 107170746 B CN107170746 B CN 107170746B CN 201610575979 A CN201610575979 A CN 201610575979A CN 107170746 B CN107170746 B CN 107170746B
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- voltage
- period
- selection
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- memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011112387.1A CN112242168A (zh) | 2016-03-02 | 2016-07-20 | 半导体存储装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016-040290 | 2016-03-02 | ||
JP2016040290A JP6581019B2 (ja) | 2016-03-02 | 2016-03-02 | 半導体記憶装置 |
Related Child Applications (1)
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CN202011112387.1A Division CN112242168A (zh) | 2016-03-02 | 2016-07-20 | 半导体存储装置 |
Publications (2)
Publication Number | Publication Date |
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CN107170746A CN107170746A (zh) | 2017-09-15 |
CN107170746B true CN107170746B (zh) | 2020-11-06 |
Family
ID=58738636
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN201610575979.4A Active CN107170746B (zh) | 2016-03-02 | 2016-07-20 | 半导体存储装置 |
CN202011112387.1A Pending CN112242168A (zh) | 2016-03-02 | 2016-07-20 | 半导体存储装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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CN202011112387.1A Pending CN112242168A (zh) | 2016-03-02 | 2016-07-20 | 半导体存储装置 |
Country Status (5)
Country | Link |
---|---|
US (8) | US9666296B1 (zh) |
JP (1) | JP6581019B2 (zh) |
CN (2) | CN107170746B (zh) |
RU (1) | RU2018115375A (zh) |
TW (6) | TWI707341B (zh) |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5814867B2 (ja) | 2012-06-27 | 2015-11-17 | 株式会社東芝 | 半導体記憶装置 |
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US10276250B1 (en) * | 2017-11-20 | 2019-04-30 | Macronix International Co., Ltd. | Programming NAND flash with improved robustness against dummy WL disturbance |
JP2019109952A (ja) | 2017-12-19 | 2019-07-04 | 東芝メモリ株式会社 | 半導体記憶装置 |
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JP2020027674A (ja) * | 2018-08-10 | 2020-02-20 | キオクシア株式会社 | 半導体メモリ |
JP2020047314A (ja) * | 2018-09-14 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置 |
JP2020047325A (ja) | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置 |
JP2020047347A (ja) | 2018-09-19 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置 |
JP2020047348A (ja) * | 2018-09-19 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置及びその制御方法 |
JP2020071892A (ja) * | 2018-10-31 | 2020-05-07 | キオクシア株式会社 | 半導体記憶装置 |
CN113035256B (zh) * | 2018-11-05 | 2022-05-10 | 长江存储科技有限责任公司 | 闪存器的数据读取方法及装置、存储设备 |
JP2020102285A (ja) * | 2018-12-21 | 2020-07-02 | キオクシア株式会社 | 半導体記憶装置 |
JP2020102290A (ja) * | 2018-12-21 | 2020-07-02 | キオクシア株式会社 | 半導体記憶装置 |
JP2020144961A (ja) * | 2019-03-07 | 2020-09-10 | キオクシア株式会社 | 半導体記憶装置 |
JP2020144962A (ja) * | 2019-03-07 | 2020-09-10 | キオクシア株式会社 | 半導体記憶装置 |
JP2020150083A (ja) * | 2019-03-12 | 2020-09-17 | キオクシア株式会社 | 不揮発性半導体記憶装置 |
JP2020149745A (ja) * | 2019-03-13 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
US11158718B2 (en) * | 2019-04-15 | 2021-10-26 | Micron Technology, Inc. | Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material |
US10707226B1 (en) * | 2019-06-26 | 2020-07-07 | Sandisk Technologies Llc | Source side program, method, and apparatus for 3D NAND |
JP2021012752A (ja) * | 2019-07-08 | 2021-02-04 | キオクシア株式会社 | 半導体記憶装置 |
KR20210015346A (ko) * | 2019-08-01 | 2021-02-10 | 에스케이하이닉스 주식회사 | 메모리 장치 및 이의 동작 방법 |
JP2021034090A (ja) | 2019-08-28 | 2021-03-01 | キオクシア株式会社 | 不揮発性半導体記憶装置 |
JP2021034089A (ja) * | 2019-08-28 | 2021-03-01 | キオクシア株式会社 | 半導体記憶装置 |
JP2021039806A (ja) | 2019-09-02 | 2021-03-11 | キオクシア株式会社 | 半導体記憶装置 |
WO2021042264A1 (en) | 2019-09-03 | 2021-03-11 | Yangtze Memory Technologies Co., Ltd. | Non-volatile memory device utilizing dummy memory block as pool capacitor |
US11282849B2 (en) | 2019-09-03 | 2022-03-22 | Yangtze Memory Technologies Co., Ltd. | Non-volatile memory device utilizing dummy memory block as pool capacitor |
WO2021077314A1 (en) | 2019-10-23 | 2021-04-29 | Yangtze Memory Technologies Co., Ltd. | Method of programming memory device and related memory device |
KR20240042230A (ko) * | 2019-10-23 | 2024-04-01 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 3차원 플래시 메모리를 판독하는 방법 |
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KR20220010212A (ko) | 2020-07-17 | 2022-01-25 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그 동작 방법 |
JP2022032589A (ja) | 2020-08-12 | 2022-02-25 | キオクシア株式会社 | 半導体記憶装置 |
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JP2022051007A (ja) | 2020-09-18 | 2022-03-31 | キオクシア株式会社 | 半導体記憶装置 |
US11205493B1 (en) | 2020-10-26 | 2021-12-21 | Sandisk Technologies Llc | Controlling word line voltages to reduce read disturb in a memory device |
KR20220056909A (ko) | 2020-10-28 | 2022-05-09 | 삼성전자주식회사 | 불휘발성 메모리 장치의 동작 방법 |
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JP2022144361A (ja) * | 2021-03-19 | 2022-10-03 | キオクシア株式会社 | 半導体記憶装置 |
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JP2023028175A (ja) | 2021-08-18 | 2023-03-03 | キオクシア株式会社 | 半導体記憶装置 |
JP2023045292A (ja) | 2021-09-21 | 2023-04-03 | キオクシア株式会社 | 半導体記憶装置及びその制御方法 |
JP2023053542A (ja) * | 2021-10-01 | 2023-04-13 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8300497A (nl) * | 1983-02-10 | 1984-09-03 | Philips Nv | Halfgeleiderinrichting met niet-vluchtige geheugentransistors. |
JP3462894B2 (ja) * | 1993-08-27 | 2003-11-05 | 株式会社東芝 | 不揮発性半導体メモリ及びそのデータプログラム方法 |
US6314026B1 (en) * | 1999-02-08 | 2001-11-06 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor device using local self boost technique |
US7218552B1 (en) * | 2005-09-09 | 2007-05-15 | Sandisk Corporation | Last-first mode and method for programming of non-volatile memory with reduced program disturb |
JP5016832B2 (ja) * | 2006-03-27 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
KR100729365B1 (ko) * | 2006-05-19 | 2007-06-15 | 삼성전자주식회사 | 더미 스트링으로 인한 읽기 페일을 방지할 수 있는 플래시메모리 장치 |
JP4939971B2 (ja) * | 2007-02-20 | 2012-05-30 | 株式会社東芝 | 不揮発性半導体メモリ |
US7916544B2 (en) * | 2008-01-25 | 2011-03-29 | Micron Technology, Inc. | Random telegraph signal noise reduction scheme for semiconductor memories |
JP4951561B2 (ja) | 2008-03-21 | 2012-06-13 | 寿産業株式会社 | 磁気選別装置 |
JP5259242B2 (ja) | 2008-04-23 | 2013-08-07 | 株式会社東芝 | 三次元積層不揮発性半導体メモリ |
US8125829B2 (en) * | 2008-05-02 | 2012-02-28 | Micron Technology, Inc. | Biasing system and method |
JP5193796B2 (ja) * | 2008-10-21 | 2013-05-08 | 株式会社東芝 | 3次元積層型不揮発性半導体メモリ |
US8599614B2 (en) * | 2009-04-30 | 2013-12-03 | Powerchip Corporation | Programming method for NAND flash memory device to reduce electrons in channels |
JP4913188B2 (ja) * | 2009-09-18 | 2012-04-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5044624B2 (ja) * | 2009-09-25 | 2012-10-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8379456B2 (en) * | 2009-10-14 | 2013-02-19 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices having dummy cell and bias methods thereof |
US8422272B2 (en) * | 2010-08-06 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
JP5404685B2 (ja) * | 2011-04-06 | 2014-02-05 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2012252741A (ja) * | 2011-06-02 | 2012-12-20 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2013004123A (ja) * | 2011-06-14 | 2013-01-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2013058276A (ja) * | 2011-09-07 | 2013-03-28 | Toshiba Corp | 半導体記憶装置 |
JP2013089272A (ja) * | 2011-10-19 | 2013-05-13 | Toshiba Corp | 不揮発性半導体記憶装置 |
US9076544B2 (en) * | 2011-11-18 | 2015-07-07 | Sandisk Technologies Inc. | Operation for non-volatile storage system with shared bit lines |
US9111620B2 (en) * | 2012-03-30 | 2015-08-18 | Micron Technology, Inc. | Memory having memory cell string and coupling components |
JP2013254537A (ja) * | 2012-06-06 | 2013-12-19 | Toshiba Corp | 半導体記憶装置及びコントローラ |
KR101951046B1 (ko) * | 2012-08-29 | 2019-04-25 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US8811084B2 (en) * | 2012-08-30 | 2014-08-19 | Micron Technology, Inc. | Memory array with power-efficient read architecture |
JP2014063551A (ja) * | 2012-09-21 | 2014-04-10 | Toshiba Corp | 半導体記憶装置 |
US9099202B2 (en) * | 2012-11-06 | 2015-08-04 | Sandisk Technologies Inc. | 3D stacked non-volatile storage programming to conductive state |
US9064577B2 (en) * | 2012-12-06 | 2015-06-23 | Micron Technology, Inc. | Apparatuses and methods to control body potential in memory operations |
KR102008422B1 (ko) * | 2012-12-17 | 2019-08-08 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조 방법 |
US9007860B2 (en) * | 2013-02-28 | 2015-04-14 | Micron Technology, Inc. | Sub-block disabling in 3D memory |
JP2014170598A (ja) * | 2013-03-01 | 2014-09-18 | Toshiba Corp | 半導体記憶装置 |
JP2014175022A (ja) * | 2013-03-06 | 2014-09-22 | Toshiba Corp | 半導体記憶装置及びそのデータ書き込み方法 |
JP2014186761A (ja) * | 2013-03-21 | 2014-10-02 | Toshiba Corp | 半導体記憶装置、コントローラ、及びメモリシステム |
CN104103639B (zh) * | 2013-04-03 | 2018-04-13 | 群联电子股份有限公司 | Nand快闪存储单元、操作方法与读取方法 |
KR20150004215A (ko) * | 2013-07-02 | 2015-01-12 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 동작 방법 |
WO2015037159A1 (ja) * | 2013-09-13 | 2015-03-19 | 株式会社 東芝 | 半導体記憶装置及びメモリシステム |
JP2015172990A (ja) * | 2014-03-12 | 2015-10-01 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR20150127419A (ko) * | 2014-05-07 | 2015-11-17 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 읽기 방법 |
US9318200B2 (en) * | 2014-08-11 | 2016-04-19 | Micron Technology, Inc. | Methods and apparatuses including a string of memory cells having a first select transistor coupled to a second select transistor |
US9305648B2 (en) * | 2014-08-20 | 2016-04-05 | SanDisk Technologies, Inc. | Techniques for programming of select gates in NAND memory |
JP6581019B2 (ja) | 2016-03-02 | 2019-09-25 | 東芝メモリ株式会社 | 半導体記憶装置 |
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2016
- 2016-03-02 JP JP2016040290A patent/JP6581019B2/ja active Active
- 2016-06-28 TW TW107117025A patent/TWI707341B/zh active
- 2016-06-28 TW TW111104672A patent/TWI815303B/zh active
- 2016-06-28 TW TW112130031A patent/TW202347339A/zh unknown
- 2016-06-28 TW TW106116788A patent/TWI633549B/zh active
- 2016-06-28 TW TW105120352A patent/TWI594240B/zh active
- 2016-06-28 TW TW109130735A patent/TWI758853B/zh active
- 2016-07-20 CN CN201610575979.4A patent/CN107170746B/zh active Active
- 2016-07-20 CN CN202011112387.1A patent/CN112242168A/zh active Pending
- 2016-08-08 US US15/231,715 patent/US9666296B1/en active Active
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2017
- 2017-04-26 US US15/498,029 patent/US10008269B2/en active Active
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2018
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2019
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2020
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2021
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2022
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2023
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RU2018115375A (ru) | 2019-10-25 |
TW202127453A (zh) | 2021-07-16 |
US20230113054A1 (en) | 2023-04-13 |
TWI594240B (zh) | 2017-08-01 |
JP2017157260A (ja) | 2017-09-07 |
US9666296B1 (en) | 2017-05-30 |
US11568936B2 (en) | 2023-01-31 |
US10418104B2 (en) | 2019-09-17 |
TWI758853B (zh) | 2022-03-21 |
TW201801086A (zh) | 2018-01-01 |
TW202347339A (zh) | 2023-12-01 |
TWI815303B (zh) | 2023-09-11 |
US20240096419A1 (en) | 2024-03-21 |
CN107170746A (zh) | 2017-09-15 |
US20190371403A1 (en) | 2019-12-05 |
US20220036951A1 (en) | 2022-02-03 |
US11875851B2 (en) | 2024-01-16 |
CN112242168A (zh) | 2021-01-19 |
US20180261289A1 (en) | 2018-09-13 |
TW201830401A (zh) | 2018-08-16 |
US10706931B2 (en) | 2020-07-07 |
TW202236283A (zh) | 2022-09-16 |
US20200286560A1 (en) | 2020-09-10 |
TWI633549B (zh) | 2018-08-21 |
TW201810273A (zh) | 2018-03-16 |
US20170256316A1 (en) | 2017-09-07 |
TWI707341B (zh) | 2020-10-11 |
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