CN103650165B - 具有用于集中光伏应用的铜格栅的隧道结太阳能电池 - Google Patents

具有用于集中光伏应用的铜格栅的隧道结太阳能电池 Download PDF

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CN103650165B
CN103650165B CN201280033886.9A CN201280033886A CN103650165B CN 103650165 B CN103650165 B CN 103650165B CN 201280033886 A CN201280033886 A CN 201280033886A CN 103650165 B CN103650165 B CN 103650165B
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CN103650165A (zh
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傅建明
徐征
J·B·亨格
游晨涛
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Abstract

本发明的一个实施例提供光伏模块。光伏模块包括光学集中器和隧道结太阳能电池。隧道结太阳能电池包括基底层、位于基底层上方的量子隧道势垒（QTB）层、发射极层、前侧电极以及背侧电极。

Description

具有用于集中光伏应用的铜格栅的隧道结太阳能电池
技术领域
本公开总体涉及一种光伏系统。更具体地，本公开涉及一种组合了隧道结太阳能电池与光学集中器的光伏系统。
背景技术
由使用化石燃料引起的负面环境影响以及它们提高的成本已经导致对于更清洁、更廉价的备选能源的迫切需求。在不同形式的备选能源之中，太阳能已经因为其清洁和广泛可用性而受到青睐。
光伏（PV）系统使用太阳能面板来将日光转换为电力。PV系统包括多个部件，诸如光伏模块（或太阳能面板）、框架、电缆、和逆变器。PV模块的成本占据整个光伏系统成本的极大部分。为了减少成本，已经使用各种方法来减少每个部件的成本以及改进光伏模块的效率。一种方法是使用将日光聚集至更小区域的集中光学元件，从而使用比系统尺寸小的多的PV模块。因此，可以大大减少PV系统内PV模块的成本。尽管存在附加的部件（诸如光学模块和跟踪器），但是整个系统的成本仍然小于不具有集中光学元件的系统。
实现具有集中光学元件的高效PV模块有许多挑战。当将日光聚集至更小区域时，其强度大大增大，导致太阳能电池的快速发热。因此，需要冷却。然而，将太阳能电池的温度冷却低至约20℃并不经济。相反，太阳能电池最可能将操作于升高的温度下。这是不期望的，因为半导体太阳能电池的能量转换效率随着温度上升而退化。对于常规的基于Si的太阳能电池而言退化尤其严重，因为它们的温度系数通常在-0.48和-0.5％/℃之间。尽管GaAs和其它基于III-V族半导体的太阳能电池在升高的温度下性能更好，但是更高的制造成本使得不那么期望需要它们。
日光集中的另一个问题在于电流拥挤效应。在太阳能电池中，首先由太阳能电池结构中吸收的光产生电流，随后由太阳能电池表面上金属格栅收集电流。日光的集中造成在金属格栅中的电流拥挤，其中电流随着集中比率几乎线性地增大。电流拥挤可以增大太阳能电池的串联电阻。因此，随着电流由于光集中而增大，太阳能电池效率因为增大的电阻损耗而降低。
此外，在传统太阳能电池中，使用印刷银膏制造前部金属格栅。为了使阴影最小，格栅宽度狭窄。丝网印刷的银格栅的高度通常限定为不大于30微米，并且截面形状是三角形。此外，由于膏中的添加剂（诸如玻璃砂或粘附剂），在烧结之后银膏的电阻率可以比纯银的电阻率高五至十倍。这些因素制约了金属格栅的串联电阻，并且不利地影响了太阳能电池效率。
发明内容
本发明的一个实施例提供了一种光伏模块。光伏模块包括光学集中器和隧道结太阳能电池。隧道结太阳能电池包括基底层、位于基底层上方的量子隧道势垒（QTB）层、发射极层、前侧电极和背侧电极。
在对实施例的变形例中，QTB层包括氧化硅（SiOx）、氢化SiOx、氮化硅（SiNx）、氢化SiNx、氧化铝（AlOx）、氮氧化硅（SiON）和氢化SiON中的至少一个。
在对实施例的变形例中，发射极层包括非晶Si（a-Si）和非晶SiC（a-SiC）中的至少一个。
在对实施例的变形例中，前侧电极包括前侧金属格栅，前侧金属格栅包括Cu和Ni中的至少一个。
在又一变形例中，使用镀制技术形成前侧金属格栅。
在对实施例的变形例中，前侧电极包括具有弯曲表面的金属格栅线，由此允许射到弯曲表面的入射光向下反射。
在对实施例的变形例中，隧道结太阳能电池进一步包括位于基底层下方的背表面场（BSF）层，并且BSF层包括非晶Si（a-Si）和非晶SiC（a-SiC）中的至少一个。
在对实施例的变形例中，隧道结太阳能电池进一步包括位于发射极层顶部上的透明导电氧化物（TCO）层。
在对实施例的变形例中，基底层包括单晶硅晶片和外延生长的晶体Si（c-Si）薄膜中的至少一个。
在对实施例的变形例中，隧道结太阳能电池进一步包括位于基底层下方的第二QTB层。
在对实施例的变形例中，发射极层背向入射光而位于基底层之下。
本发明的一个实施例包括光伏系统。系统包括太阳能电池模块以及被配置为集中接收到的日光的光学模块。太阳能电池模块包括多层半导体结构，面向入射光而位于多层半导体结构之上的前侧金属格栅，以及背侧电极。前侧金属格栅包括Cu和Ni中的至少一个。
附图说明
图1呈现示出了根据本发明实施例的示例性隧道结太阳能电池的图。
图2呈现示出了根据本发明实施例的制作隧道结太阳能电池的工艺的图。
图3呈现示出了根据本发明实施例的制作隧道结太阳能电池的工艺的图。
图4呈现示出了根据本发明实施例的示例性背部隧道结太阳能电池的图。
图5呈现示出了根据本发明实施例的示例性集中器光伏（CPV）模块的图。
具体实施方式
呈现以下描述以使得任何本领域技术人员做出并且使用实施例，并且在特定应用背景及其需求中提供以下描述。对于所公开实施例的各种修改对于本领域技术人员而言是明显的，并且本文限定的总体原理可以应用于其它实施例和应用而不脱离本公开的精神和范围。因此，本发明并不限定于所示实施例，而是符合与本文公开的原理和特征一致的最广的范围。
概述
本发明的实施例提供一种基于隧道结太阳能电池的集中器光伏（CPV）模块。集中器PV模块包括将照射在较大区域上的日光集中至较小区域的光学聚集机构，以及一个或多个隧道结太阳能电池。隧道结太阳能电池包括晶态硅（c-Si）堆叠、氧化物隧道势垒层和钝化层、以及非晶半导体层。此外，太阳能电池的前部金属格栅通过镀制铜而形成。该类型的CPV模块展现出高转换效率（高达24％）以及低温度系数（低至-0.20％/℃）。
隧道结太阳能电池
在一个实施例中，CPV模块内的太阳能电池包括具有分别用作发射极（emitter）和BSF的前部掺杂非晶半导体层和背部掺杂非晶半导体层的双侧金属-绝缘体-半导体（MIS）隧道结结构。图1呈现示出了根据本发明实施例的示例性隧道结太阳能电池的图。隧道结太阳能电池100包括衬底102、覆盖衬底102的表面并且钝化表面缺陷状态的超薄氧化硅层104和106、形成发射极108的前侧掺杂非晶Si（a-Si）层、前侧透明导电氧化物（TCO）层110、形成BSF层112的背侧掺杂a-Si层、背侧TCO层114、前部电极116和背部电极118。图1中箭头表示入射日光。
可以使用n-或p-型掺杂高质量太阳能级别硅（SG-Si）晶片以构建隧道结太阳能电池。在一个实施例中，选择n-型掺杂SG-Si晶片。图2呈现示出了根据本发明实施例的制作隧道结太阳能电池的工艺的图。
在操作2A中，制备衬底200。在一个实施例中，衬底200是SG-Si衬底。SG-Si衬底的电阻率通常在（但是不限于）0.5ohm-cm和10ohm-cm之间的范围内。在一个实施例中，衬底200可以是包括沉积在SG-Si衬底上的外延形成的c-Si增强层的复合基底层。c-Si增强层的掺杂类型与SG-Si衬底的掺杂类型相似。此外，c-Si增强层可以是均匀掺杂或者分级掺杂的。在另一实施例中，c-Si增强层是均匀掺杂的，具有0.5ohm-cm的均匀的薄层电阻。在不同实施例中，c-Si增强层是分级掺杂的，具有在0.2ohm-cm和1ohm-cm之间变化的薄层电阻。c-Si增强层的厚度可以在0.5μm和2μm之间。
制备操作包括去除大约10μm硅的典型锯切损伤刻蚀以及表面结构化。表面结构可以具有各种图案，包括但是不限于：六棱锥、倒置棱锥、圆柱、圆锥、环形和其它不规则形状。在一个实施例中，表面结构化操作导致随机的棱锥结构化表面。此后，衬底200经历广泛的表面清洁。
在操作2B中，在SG-Si衬底200的前表面和背表面上沉积高质量（具有小于1×1011/cm2的缺陷界面状态密度（Dit））电介质材料的薄层，以分别形成前部钝化/隧道层202和背部钝化/隧道层204。在一个实施例中，采用电介质材料薄层仅沉积SG-Si衬底200的前表面。在备选实施例中，采用电介质材料的薄层仅沉积SG-Si衬底200的背表面。各种类型的电介质材料可以用于形成钝化/隧道层，包括但是不限于：氧化硅（SiOx）、氢化SiOx、氮化硅（SiNx）、氢化SiNx、氧化铝（AlOx）、氮氧化硅（SiON）和氢化SiON。此外，各种沉积技术可以用于沉积钝化/隧道层，包括但是不限于：热氧化、原子层沉积、湿法或蒸汽氧化、低压自由基氧化、等离子体增强化学气相沉积（PECVD）等。钝化/隧道层的厚度可以在1和50埃之间，优选地在1和10埃之间。注意，隧道/钝化层的良好控制的厚度确保良好的隧道和钝化效应。
在操作2C中，在前部钝化/隧道层202上沉积氢化的分级掺杂的a-Si层以形成发射极层206。结果，发射极层206位于太阳能电池的面向入射日光的前侧上。发射极层206的掺杂类型与SG-Si衬底200的掺杂类型相反。如果SG-Si衬底200是n-型掺杂，则发射极层206是p-型掺杂，反之亦然。在一个实施例中，使用硼作为掺杂剂对发射极层206进行p-型掺杂。SG-Si衬底200、前部钝化/隧道层202和发射极层206形成前部氧化物隧道结。发射极层206的厚度在2和50nm之间。注意，可以优化发射极层206的掺杂分布以确保良好的欧姆接触、最小光吸收和大内建电场。在一个实施例中，发射极层206的掺杂浓度可以从零变化至5×1020/cm3。在另一实施例中，发射极层206内与前部钝化/隧道层202相邻的区域是未掺杂的或者具有较低的掺杂浓度，而远离前部钝化/隧道层202的区域具有较高掺杂浓度。较低的掺杂浓度确保在前部钝化/隧道层202与发射极层206之间界面处的最小缺陷密度，而在另一侧上的较高浓度防止了发射极层耗尽。发射极层206的晶体结构可以是非晶、或实现更高载流子迁移率的纳米晶、或在紫外线（UV）波长范围内实现良好吸收而在红外线（IR）波长范围内实现良好传输的原始晶体。所有晶体结构需要保持a-Si的大带隙。在一个实施例中，发射极层206可以包括掺杂碳的a-Si。在另一实施例中，发射极层206可以包括非晶碳化硅或氢化非晶碳化硅（a-Si1-xCx:H）。
在操作2D中，在背部钝化/隧道层204的表面上沉积氢化的分级掺杂a-Si层以形成背表面场（BSF）层208。BSF层208的掺杂类型与SG-Si衬底200的掺杂类型相同。如果SG-Si衬底200是n-型掺杂，则BSF层208是也是n-型掺杂，反之亦然。在一个实施例中，使用磷作为掺杂剂对BSF层208进行n-型掺杂。SG-Si衬底200、背部钝化/隧道层204和BSF层208形成背部氧化物隧道结。在一个实施例中，BSF层208的厚度在3和30nm之间。BSF层208的存在改进了背侧钝化并且允许与后续沉积的背部透明导电氧化物（TCO）层的良好的欧姆接触。类似于发射极层206，BSF层208内的与背部钝化/隧道层204相邻的区域是未掺杂的或者具有较低掺杂浓度，而远离背部钝化/隧道层204的区域具有较高掺杂浓度。较低掺杂浓度确保在背部钝化/隧道层204与BSF层208之间的界面处的最小缺陷密度，而另一侧上的较高浓度确保了与背部TCO层的良好欧姆接触。在一个实施例中，BSF层208的掺杂浓度从零改变至5×1020/cm3。除了a-Si之外，也可以使用其它材料以形成BSF层208。在一个实施例中，微晶Si层沉积在背部钝化/隧道层204的表面上以形成BSF层208。使用用于BSF层208的微晶Si材料可以确保较低的串联电阻和与背部TCO层的较好的欧姆接触。在另一实施例中，BSF层208可以包括非晶碳化硅或氢化非晶碳化硅（a-Si1-xCx:H）。
在操作2E中，在发射极层206的表面上沉积TCO材料层以形成导电的防反射层210。TCO的示例包括但是不限于：氧化铟锡（ITO）、氧化锡（SnOx）、掺杂铝的氧化锌（ZnO:Al或AZO）、或掺杂镓的氧化锌（ZnO:Ga）。
在操作2F中，在BSF层208的表面上形成背侧TCO层212。
在操作2G中，分别在TCO层210和212的表面上形成前侧电极214和背侧电极216。在一个实施例中，前侧电极214和/或背侧电极216可以包括Cu格栅，用于形成Cu格栅的各种技术包括但是不限于：无电镀制、电镀、溅射和蒸发。在另一实施例中，Cu格栅可以包括多层结构，诸如Cu/Sn双层结构，或Cu/Ag双层结构。注意，镀制的Cu金属格栅通常具有形状为方形的截面，并且高度至少20μm并且可以高达50μm或更高。这导致镀制的Cu格栅截面面积比传统的丝网印刷的Ag格栅的更大，并且因此镀制的Cu格栅的串联电阻远远小于Ag格栅的串联电阻。此外，镀制的Cu的电阻率约为1.8×10-6ohm-cm，接近于纯Cu。
为了改进铜格栅与TCO层的粘附并且防止铜扩散至TCO下方的硅层，可以在铜格栅和TCO之间形成可选的势垒/粘附层。用于形成该可选的势垒/粘附层的材料包括但是不限于：Ti、TiN、TiW、Ta、TaN、WN、Co或其组合。在一个实施例中，在沉积铜格栅214和216之后，在TCO层210和212的顶部上沉积可选的势垒/粘附层。
注意，太阳能电池的前侧电极通常包括连接至称作总线汇流条的较宽金属线的所谓指部的薄格栅线。指部格栅线的典型宽度在40和100μm之间，并且总线汇流条的典型宽度在1和2mm之间。与用于非CPV（1-太阳（1-sun））应用的太阳能电池相比，为了减小串联电阻，需要一定的权衡以用于针对CPV应用使用的太阳能电池。减小串联电阻的一种方式是通过减小指部之间的节距来增大格栅线的数目。另一种方式是增大总线汇流条的数目，因而减小格栅线的每个分节的长度。然而，两种方法均增大了电极的总面积，导致增大的阴影效应。对于1-太阳应用，具有印刷的银电极的传统太阳能电池通常具有在格栅线之间在2和2.5mm之间的距离，以及在30和35mm之间的格栅线的分节长度。对于CPV应用，诸如5至10太阳浓度（sun concentration），格栅线的节距和长度分别减小至小于1mm和25mm。这会大大增大阴影。然而，在本发明的实施例中，通过使用镀制的铜电极，对于增大格栅线或总线汇流条的密度的需求可以减小至零，因此导致了更高的总体转换效率。
为了使阴影最小，在一个实施例中，前侧电极214包括平行的具有如下截面的金属格栅线，该截面具有弯曲周界。换言之，金属格栅线具有弯曲表面。在弯曲表面的任何给定点处，由与弯曲表面相切的平面和太阳能电池表面所形成角度理想地在45°和90°之间。在另一实施例中，角度在67.5°和90°之间。这确保了射到格栅线的弯曲表面上任何点处的入射日光向下反射以被太阳能电池所吸收。金属格栅线的垂直纵横比大于2.5以最小化电阻性损耗。
除了图2中所示方法之外，制作隧道结太阳能电池的其它方式也是可能的。在一个实施例中，取代SG-Si晶片，隧道结太阳能电池的基底层是外延生长的c-Si层。图3呈现示出了根据本发明实施例的制作隧道结太阳能电池的方法的图。
在操作3A中，使用类似于操作2A的工艺来制备SG-Si衬底300，除了没有形成表面结构化之外。
在操作3B中，在SG-Si衬底300上外延生长重掺杂c-Si层302的薄层。在一个实施例中，使用化学气相沉积（CVD）外延工艺形成重掺杂c-Si外延（EPI）层302。各种类型的Si化合物（诸如SiH4、SiH2Cl2和SiHCl3）可以用作CVD工艺中的前驱物以形成重掺杂c-SiEPI层302。在一个实施例中，由于其储量丰裕和低成本而使用SiHCl3（TCS）。重掺杂c-Si EPI层302的厚度可以在1μm和5μm之间。重掺杂c-Si EPI层302的掺杂类型与SG-Si衬底300的掺杂类型相同。在一个实施例中，重掺杂c-Si EPI层302是n-型掺杂。重掺杂c-Si EPI层302的掺杂浓度可以在1×1017/cm3和1×1020/cm3之间。掺杂水平不应超过最大限值，这可以导致薄膜中不适合的位错。重掺杂c-SiEPI层302可以用作背表面场（BSF）、杂质势垒以及污染物获得层，以用于减小在后续生长的基底层表面处的电子-空穴复合。
在操作3C中，在重掺杂c-Si EPI层302上外延生长轻掺杂c-Si层以形成基底层304。用于生长基底层304的工艺类似于用于生长重掺杂c-Si EPI层302的工艺。在一个实施例中，CVD EPI工艺用于形成基底层304。基底层304的厚度可以在20μm和100μm之间。基底层304的掺杂类型与SG-Si衬底300和重掺杂c-Si EPI层302的掺杂类型相同。在一个实施例中，对基底层304进行n-型掺杂，这可以提供更好的载流子寿命、更高的Voc以及更高的太阳能电池效率。基底层304的掺杂浓度可以在1×1015/cm3和1×1017/cm3之间。在另一实施例中，基底层304可以是具有分级掺杂的c-Si层。基底层304的掺杂浓度可以在1×1014/cm3和1×1018/cm3之间，使得与重掺杂c-Si EPI层302相邻的区域具有较高的掺杂浓度，而相对侧具有较低的掺杂浓度。这种掺杂分布导致允许所产生的少数载流子朝向结漂移的电场，从而增加Jsc。在另一实施例中，在分级掺杂的基底层304内插入本征EPI c-Si的薄层。本征EPI c-Si层的厚度可以在1和10nm之间。本征EPI c-Si层的插入确保了分级掺杂基底层304的更好的薄膜质量，因为其限制了在基底层304的EPI生长期间的缺陷传播和晶格不匹配。注意，可以通过改变流入外延腔室中的气流而在分级掺杂的基底层304的生长期间在任何点处沉积本征EPIc-Si层。
在基底层304的EPI生长之后，在操作3D中，去除SG-Si衬底300和重掺杂c-Si EPI层302。各种技术可以用于去除SG-Si衬底300和重掺杂c-Si EPI层302，包括但是不限于：机械抛光、化学湿法刻蚀、干法刻蚀和化学机械抛光。在一个实施例中，机械背部研磨（backgrinding）方法用于去除SG-Si衬底300和重掺杂c-Si EPI层302。随后，湿法化学刻蚀工艺用于去除所有背部研磨损伤，背部研磨损伤可以导致增大的少数载流子复合，因此退化了太阳能电池性能。用于湿法化学刻蚀的溶剂包括但是不限于：氮氧化钠（NaOH）、四甲基氢氧化铵（TMAH）、以及硝酸和氢氟酸的混合物（HNO3:HF）。
在操作3E中，对基底层304的前表面和背表面进行结构化以最大化太阳能电池内的光吸收，因此进一步增强太阳能电池转换效率。表面结构的形状可以是棱锥或倒置棱锥，其随机或者规律地分布在基底层304的前表面和背表面上。
剩下的制造工艺类似于图2中所示的制造工艺。在操作3F中，使用类似于操作2B的工艺形成前部和背部钝化/隧道层306和308。
在操作3G中，使用类似于操作2C和2D中使用的工艺形成发射极层310和BSF层312。
在操作3H中，使用类似于操作2E和2F中使用的工艺形成前部和背部TCO层314和316。
在操作3I中，使用类似于操作2G中使用的工艺形成前部和背部电极318和320。
除了图2和图3中所示示例之外，也可能制作具有位于太阳能电池的背侧上的发射极层（其具有与基底层的掺杂类型相反的掺杂类型）的隧道结太阳能电池。在一个实施例中，具有高缺陷密度的p-型掺杂发射极层沉积在背部隧道/钝化层的表面上，而前表面场（FSF）层（具有与基底层的掺杂类型相同的掺杂类型）沉积在前部隧道/钝化层的表面上。因为发射极现在背离入射光，可以最小化由于靠近太阳能电池的前表面的短波长吸收导致的电流损失。此外，发射极可以制作得更厚以消除发射极耗尽效应，而不危害由于短波长吸收导致的电流损失。更厚的发射极也提供了在调节p-型掺杂发射极功函数以匹配背部TCO层的功函数的灵活性，或者使其能够使用更优选的背部TCO材料而不受到传输性质的限制。此外，因为长波长较低能量吸收影响背侧隧道结，所以其不易受到更高能量过量载流子复合的影响。
图4呈现示出了根据本发明实施例的示例性背部隧道结太阳能电池的图。背部隧道结太阳能电池400包括n-型掺杂的衬底402、覆盖衬底402的前表面和背表面的QTB层404和406、用作前表面场（FSF）层的n+掺杂的a-Si层408、前侧透明导电氧化物（TCO）层410、背侧p-型掺杂的a-Si发射极层412、背侧TCO层414、前部电极416、以及背部电极418。图4中箭头表示入射日光。
隧道结太阳能电池的优点包括高转换效率（高达24％），以及低温度系数（低至-0.20％/℃），这小于传统基于晶态Si的太阳能电池的一半。低温度系数允许隧道结太阳能电池与传统太阳能电池相比在提高的温度下更有效地将太阳能转换为电能。例如，在75℃的升高的温度下，隧道结太阳能电池比具有相同铭牌功率的传统太阳能电池产生12-15％的更多电能。注意，铭牌功率是在标准操作条件下（在25℃）所产生的功率值。
前述的铜格栅也可以有利于具有其它类型的结（诸如通过扩散形成的p-n结）的太阳能电池，以用于CPV应用。这些太阳能电池可以不包括TCO层。在这种情形中，铜格栅线位于硅层（诸如发射极）的上方，并且包括Ti、TiN、TiW、Ta、TaN、WN、Ni、Co或其组合的势垒层形成在硅层与铜格栅之间。
CPV模块
图5呈现示出了根据本发明实施例的示例性集中器光伏模块（CPV）的图。CPV模块500包括太阳能集中器502和多个太阳能电池，诸如太阳能电池504、506、508、510以及512，这些太阳能电池相互相邻放置，形成了太阳能条带。太阳能集中器502将照射在其上的日光集中至太阳能电池504－512，所有这些太阳能电池具有与整个模块的尺寸相比远远较小的表面面积。太阳能电池504－512放置在集中器502的焦点处或其附近。在一个实施例中，太阳能电池504－512串联电连接。可以基于日照时间和季节调整集中器502的朝向以最大化日光的吸收。
集中器502可以使用各种可用的光学聚集技术来实施，包括但是不限于通过光学媒介的反射或者折射。例如，集中器502可以是聚焦透镜或反射镜。在图5中，集中器502是抛物线型反射镜，并且太阳能电池504－512放置在抛物线型槽的焦点线上或附近。其它光集中技术也是可能的。例如，集中器502可以是抛物面型反射器。此外，取代连续的抛物面，集中器502可以包括安装在圆柱形或抛物线形支撑衬底上的大量平面镜面。平面镜的制造成本远远低于抛物面或槽的制造成本。
太阳能电池504－512可以是任何类型的太阳能电池。在一个实施例中，太阳能电池504－512包括隧道结太阳能电池，其可以在前侧或者背侧处具有结。隧道结太阳能电池具有远远更小的低温度系数（低至-0.20％/℃），因此与其它类型太阳能电池相比在提高的温度下具有更高的电池效率。注意，由于集中器502的存在，太阳能电池504－512即便冷却（图5中未示出冷却系统）也通常工作在较高的温度下。在又一实施例中，太阳能电池504－512可以是使用镀制的Cu格栅作为朝光表面上的前侧金属格栅的任何类型的太阳能电池。镀制Cu的较低电阻率和Cu格栅线的较大截面面积最小化了电阻损耗，该电阻损耗由于电流拥挤效应而在CPV中可能是重大损耗因素。在另一实施例中，Cu格栅包括具有弯曲表面的平行格栅线以消除阴影效应。
已经仅为了说明和描述的目的呈现各个实施例的前述说明。它们并非意在穷举或者限定本发明为所公开的形式。因此，许多修改和变型对于本领域技术人员而言明显的。此外，本公开并非意在限定本发明。

Claims (20)

1.一种光伏模块，包括：
光学集中器；以及
隧道结太阳能电池，包括：
基底层，
量子隧道势垒(QTB)层，位于所述基底层上方；
发射极层，
前侧电极，以及
背侧电极，
其中所述前侧电极包括具有弯曲表面的金属格栅线，由此允许入射到所述金属格栅线的所述弯曲表面上的光向下反射以被太阳能电池吸收。
2.根据权利要求1所述的光伏模块，其中，所述QTB层包括以下项中的至少一项：
氧化硅(SiOx)；
氢化SiOx；
氮化硅(SiNx)；
氢化SiNx；
氧化铝(AlOx)；
氮氧化硅(SiON)；以及
氢化SiON。
3.根据权利要求1所述的光伏模块，其中，所述发射极层包括以下项中的至少一项：
非晶Si(a-Si)；以及
非晶SiC(a-SiC)。
4.根据权利要求1所述的光伏模块，其中，所述前侧电极包括前侧金属格栅，所述前侧金属格栅包括以下项中的至少一项：Cu和Ni。
5.根据权利要求4所述的光伏模块，其中，所述前侧金属格栅使用镀制技术形成。
6.根据权利要求1所述的光伏模块，其中，所述隧道结太阳能电池进一步包括位于所述基底层下方的背表面场(BSF)层，并且其中所述BSF层包括以下项中的至少一项：非晶Si(a-Si)和非晶SiC(a-SiC)。
7.根据权利要求1所述的光伏模块，其中，所述隧道结太阳能电池进一步包括位于所述发射极层顶部上的透明导电氧化物(TCO)层。
8.根据权利要求1所述的光伏模块，其中，所述基底层包括以下项中的至少一项：
单晶硅晶片；以及
外延生长的晶态Si(c-Si)薄膜。
9.根据权利要求1所述的光伏模块，其中，所述隧道结太阳能电池进一步包括位于所述基底层下方的第二QTB层。
10.根据权利要求1所述的光伏模块，其中，所述发射层背向入射光而位于所述基底层下方。
11.一种光伏系统，包括：
光学模块，被配置为集中接收到的日光；以及
太阳能电池模块，包括：
多层半导体结构，
前侧金属格栅，面向入射光而位于所述多层半导体结构上方，其中所述前侧金属格栅包括以下项中的至少一项：Cu和Ni，以及
背侧电极，
其中所述前侧金属格栅包括具有弯曲表面的金属格栅线，由此允许射到所述弯曲表面的入射光向下反射以被太阳能电池模块吸收。
12.根据权利要求11所述的光伏系统，其中，所述前侧金属格栅使用镀制技术形成。
13.根据权利要求11所述的光伏系统，其中，所述多层半导体结构包括：
基底层；
发射极层；
前侧导电层，位于所述前侧金属格栅与所述发射极层之间；以及
背侧导电层，位于所述基底层与所述背侧电极之间。
14.根据权利要求13所述的光伏系统，其中，所述基底层包括以下项中的至少一项：
单晶硅晶片；以及
外延生长的晶态Si(c-Si)薄膜。
15.根据权利要求13所述的光伏系统，进一步包括位于所述基底层上方的量子隧道势垒(QTB)层，其中所述QTB层包括以下项中的至少一项：
氧化硅(SiOx)；
氢化SiOx；
氮化硅(SiNx)；
氢化SiNx；
氧化铝(AlOx)；
氮氧化硅(SiON)；以及
氢化SiON。
16.根据权利要求13所述的光伏系统，其中，所述发射极层包括以下项中的至少一项：
非晶Si(a-Si)；以及
非晶SiC(a-SiC)。
17.根据权利要求13所述的光伏系统，其中，所述多层半导体结构进一步包括位于所述基底层下方的背表面场(BSF)层，并且其中所述BSF层包括以下项中的至少一项：非晶Si(a-Si)；以及非晶SiC(a-SiC)。
18.根据权利要求13所述的光伏系统，其中，所述多层半导体结构进一步包括位于所述发射极层顶部上的透明导电氧化物(TCO)层。
19.根据权利要求13所述的光伏系统，其中，所述多层半导体结构进一步包括位于所述基底层下方的第二QTB层。
20.根据权利要求13所述的光伏系统，其中，所述发射极层背向入射光而位于所述基底层下方。
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Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
GB2491209B (en) * 2011-05-27 2013-08-21 Renewable Energy Corp Asa Solar cell and method for producing same
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US20130125968A1 (en) * 2011-11-18 2013-05-23 Sunpreme, Ltd. Low-cost solar cell metallization over tco and methods of their fabrication
US9508874B2 (en) * 2012-03-09 2016-11-29 First Solar, Inc. Photovoltaic device and method of manufacture
CN104781936A (zh) 2012-10-04 2015-07-15 喜瑞能源公司 具有电镀的金属格栅的光伏器件
US9865754B2 (en) * 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US20140203322A1 (en) * 2013-01-23 2014-07-24 Epistar Corporation Transparent Conductive Structure, Device comprising the same, and the Manufacturing Method thereof
US10090431B2 (en) 2013-03-12 2018-10-02 New Jersey Institute Of Technology System and method for thin film photovoltaic modules and back contact for thin solar cells
US8916038B2 (en) * 2013-03-13 2014-12-23 Gtat Corporation Free-standing metallic article for semiconductors
CN109599450A (zh) 2013-04-03 2019-04-09 Lg电子株式会社 太阳能电池
KR101889774B1 (ko) * 2013-09-09 2018-08-20 엘지전자 주식회사 태양 전지
KR101699743B1 (ko) * 2013-04-03 2017-02-13 엘지전자 주식회사 태양 전지
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
KR102132741B1 (ko) * 2013-11-26 2020-07-10 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101614190B1 (ko) * 2013-12-24 2016-04-20 엘지전자 주식회사 태양전지 및 이의 제조 방법
JP5735093B1 (ja) 2013-12-24 2015-06-17 株式会社マテリアル・コンセプト 太陽電池及びその製造方法
KR102244840B1 (ko) * 2014-03-05 2021-04-26 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9783901B2 (en) 2014-03-11 2017-10-10 Macdermid Acumen, Inc. Electroplating of metals on conductive oxide substrates
DE102014205350B4 (de) * 2014-03-21 2021-09-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photoaktives Halbleiterbauelement sowie Verfahren zum Herstellen eines photoaktiven Halbleiterbauelementes
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
KR102219804B1 (ko) 2014-11-04 2021-02-24 엘지전자 주식회사 태양 전지 및 그의 제조 방법
JP6219913B2 (ja) 2014-11-28 2017-10-25 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
DE102014224679A1 (de) * 2014-12-02 2016-06-02 Solarworld Innovations Gmbh Solarzelle
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9520507B2 (en) 2014-12-22 2016-12-13 Sunpower Corporation Solar cells with improved lifetime, passivation and/or efficiency
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
WO2016131190A1 (en) * 2015-02-17 2016-08-25 Solarcity Corporation Method and system for improving solar cell manufacturing yield
KR102272433B1 (ko) 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US10453983B2 (en) * 2015-12-18 2019-10-22 Lg Electronics Inc. Solar cell and method of manufacturing
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
EP3435426B1 (en) * 2016-03-23 2020-07-01 Panasonic Intellectual Property Management Co., Ltd. Solar cell, solar cell module, and method for manufacturing solar cell
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
CN109690791B (zh) * 2016-06-30 2022-09-16 株式会社钟化 晶体硅系太阳能电池及其制造方法
US20180175233A1 (en) * 2016-12-21 2018-06-21 Solarcity Corporation Alignment markers for precision automation of manufacturing solar panels and methods of use
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
CN108108508B (zh) * 2017-10-20 2021-01-26 湖北工业大学 引入隧道结机制的聚光光伏模组温度特性的预测方法
US10553743B2 (en) 2017-11-20 2020-02-04 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Flexible crystalline ultra-thin Si solar cells
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
KR101886818B1 (ko) * 2018-07-25 2018-08-08 충남대학교산학협력단 이종 접합 실리콘 태양 전지의 제조 방법
JP2020161551A (ja) * 2019-03-25 2020-10-01 パナソニック株式会社 太陽電池セル及び太陽電池モジュール
CN111628032B (zh) * 2020-05-11 2022-05-27 中威新能源(成都)有限公司 一种硅异质结太阳电池本征钝化层的结构及其制作方法
WO2023193065A1 (en) * 2022-04-08 2023-10-12 Australian National University Photovoltaic cell and methods of fabricating same
CN114914321B (zh) * 2022-06-13 2024-02-06 南通市乐能电力有限公司 一种光伏电板用n型电池片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008045522A1 (de) * 2008-09-03 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Heterosolarzelle und Verfahren zur Herstellung von Heterosolarzellen
WO2010075606A1 (en) * 2008-12-29 2010-07-08 Shaun Joseph Cunningham Improved photo-voltaic device
WO2010123974A1 (en) * 2009-04-21 2010-10-28 Tetrasun, Inc. High-efficiency solar cell structures and methods of manufacture
WO2011005447A2 (en) * 2009-06-22 2011-01-13 International Business Machines Corporation Semiconductor optical detector structure

Family Cites Families (408)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US819360A (en) 1905-03-22 1906-05-01 Edward Newton A Electrical switch.
US1980702A (en) * 1933-09-27 1934-11-13 Rca Corp Phototube
US2626907A (en) 1951-05-14 1953-01-27 Petrolite Corp Process for breaking petroleum emulsions
US2938938A (en) 1956-07-03 1960-05-31 Hoffman Electronics Corp Photo-voltaic semiconductor apparatus or the like
US3116171A (en) 1961-03-14 1963-12-31 Bell Telephone Labor Inc Satellite solar cell assembly
US3094439A (en) 1961-07-24 1963-06-18 Spectrolab Solar cell system
US3459597A (en) 1966-02-04 1969-08-05 Trw Inc Solar cells with flexible overlapping bifurcated connector
US3969163A (en) 1974-09-19 1976-07-13 Texas Instruments Incorporated Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases
JPS5758075B2 (zh) 1974-10-19 1982-12-08 Sony Corp
US3961997A (en) 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4082568A (en) 1977-05-10 1978-04-04 Joseph Lindmayer Solar cell with multiple-metal contacts
US4193975A (en) 1977-11-21 1980-03-18 Union Carbide Corporation Process for the production of improved refined metallurgical silicon
US4124410A (en) 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
US4342044A (en) 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4200621A (en) 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US4284490A (en) 1978-09-28 1981-08-18 Coulter Systems Corporation R.F. Sputtering apparatus including multi-network power supply
US4213798A (en) 1979-04-27 1980-07-22 Rca Corporation Tellurium schottky barrier contact for amorphous silicon solar cells
US4251285A (en) 1979-08-14 1981-02-17 Westinghouse Electric Corp. Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon
DE2944185A1 (de) 1979-11-02 1981-05-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Solarzelle
US4315096A (en) 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
JPS5789269A (en) 1980-09-26 1982-06-03 Licentia Gmbh Solar battery unit
DE3280455T3 (de) 1981-11-04 2000-07-13 Kanegafuchi Kagaku Kogyo K.K., Osaka Biegsame photovoltaische Vorrichtung.
US4571448A (en) 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4657060A (en) 1982-03-01 1987-04-14 Graber Industries, Inc. Vertical venetian blind with inline drive
US4431858A (en) 1982-05-12 1984-02-14 University Of Florida Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby
DE3308269A1 (de) 1983-03-09 1984-09-13 Licentia Patent-Verwaltungs-Gmbh Solarzelle
US4586988A (en) 1983-08-19 1986-05-06 Energy Conversion Devices, Inc. Method of forming an electrically conductive member
US4589191A (en) 1983-10-20 1986-05-20 Unisearch Limited Manufacture of high efficiency solar cells
US4514579A (en) 1984-01-30 1985-04-30 Energy Conversion Devices, Inc. Large area photovoltaic cell and method for producing same
DE3419137A1 (de) 1984-05-23 1985-11-28 Bayer Ag, 5090 Leverkusen Verfahren und vorrichtung zur herstellung von halbleiterfolien
US4577051A (en) 1984-09-28 1986-03-18 The Standard Oil Company Bypass diode assembly for photovoltaic modules
US4567642A (en) 1984-09-28 1986-02-04 The Standard Oil Company Method of making photovoltaic modules
US4633033A (en) 1985-02-08 1986-12-30 Energy Conversion Devices, Inc. Photovoltaic device and method
US4617421A (en) 1985-04-01 1986-10-14 Sovonics Solar Systems Photovoltaic cell having increased active area and method for producing same
US4667060A (en) 1985-05-28 1987-05-19 Spire Corporation Back junction photovoltaic solar cell
US4652693A (en) 1985-08-30 1987-03-24 The Standard Oil Company Reformed front contact current collector grid and cell interconnect for a photovoltaic cell module
US4753683A (en) 1985-09-09 1988-06-28 Hughes Aircraft Company Gallium arsenide solar cell system
FR2597662B1 (fr) 1986-04-22 1988-06-17 Thomson Csf Photodiode pin realisee a partir de semi-conducteur amorphe
US4694115A (en) 1986-11-04 1987-09-15 Spectrolab, Inc. Solar cell having improved front surface metallization
DE3708548A1 (de) 1987-03-17 1988-09-29 Telefunken Electronic Gmbh Solarzellenmodul mit parallel und seriell angeordneten solarzellen
US4771017A (en) 1987-06-23 1988-09-13 Spire Corporation Patterning process
US5057163A (en) 1988-05-04 1991-10-15 Astropower, Inc. Deposited-silicon film solar cell
US5698451A (en) 1988-06-10 1997-12-16 Mobil Solar Energy Corporation Method of fabricating contacts for solar cells
US5075763A (en) 1988-09-28 1991-12-24 Kopin Corporation High temperature metallization system for contacting semiconductor materials
JPH06105691B2 (ja) 1988-09-29 1994-12-21 株式会社富士電機総合研究所 炭素添加非晶質シリコン薄膜の製造方法
US4933061A (en) 1988-12-29 1990-06-12 Trifari, Krussman & Fishel, Inc. Electroplating tank
DE3901042A1 (de) 1989-01-14 1990-07-26 Nukem Gmbh Verfahren und vorrichtung zur herstellung eines halbleiter-schichtsystems
US5217539A (en) 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5091018A (en) 1989-04-17 1992-02-25 The Boeing Company Tandem photovoltaic solar cell with III-V diffused junction booster cell
US5118361A (en) 1990-05-21 1992-06-02 The Boeing Company Terrestrial concentrator solar cell module
JPH036867A (ja) 1989-06-05 1991-01-14 Mitsubishi Electric Corp 光発電素子の電極構造、形成方法、及びその製造装置
DE4009336A1 (de) 1990-03-23 1991-09-26 Telefunken Systemtechnik Solarzelle
DE69128080T2 (de) 1990-05-18 1998-02-26 Hitco Technologies Inc., Gardena, Calif. Werkstoffe für cdv-verfahren
DK170189B1 (da) 1990-05-30 1995-06-06 Yakov Safir Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf
US5213628A (en) 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
DE4030713A1 (de) 1990-09-28 1992-04-02 Telefunken Systemtechnik Photovoltaischer solargenerator
JPH04245683A (ja) 1991-01-31 1992-09-02 Tonen Corp 太陽電池の製造方法
US5364518A (en) 1991-05-28 1994-11-15 Leybold Aktiengesellschaft Magnetron cathode for a rotating target
ES2115671T3 (es) 1991-06-11 1998-07-01 Ase Americas Inc Celula solar mejorada y metodo para la fabricacion de la misma.
US5178685A (en) 1991-06-11 1993-01-12 Mobil Solar Energy Corporation Method for forming solar cell contacts and interconnecting solar cells
US5181968A (en) 1991-06-24 1993-01-26 United Solar Systems Corporation Photovoltaic device having an improved collector grid
US5455430A (en) 1991-08-01 1995-10-03 Sanyo Electric Co., Ltd. Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate
US5705828A (en) 1991-08-10 1998-01-06 Sanyo Electric Co., Ltd. Photovoltaic device
US5286306A (en) 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
US5808315A (en) 1992-07-21 1998-09-15 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having transparent conductive film
JPH06196766A (ja) * 1992-12-24 1994-07-15 Fujitsu Ltd 超伝導トランジスタ
JPH0794431A (ja) 1993-04-23 1995-04-07 Canon Inc アモルファス半導体用基板、該基板を有するアモルファス半導体基板、及び該アモルファス半導体基板の製造方法
US5401331A (en) 1993-09-07 1995-03-28 Midwest Research Institute Substrate for thin silicon solar cells
DE4333407C1 (de) 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
JPH07249788A (ja) 1994-03-11 1995-09-26 Tonen Corp 太陽電池
JPH07326664A (ja) 1994-05-31 1995-12-12 Fuji Electric Co Ltd ウエハの誘電体分離溝の充填方法
FR2722612B1 (fr) 1994-07-13 1997-01-03 Centre Nat Rech Scient Procede de fabrication d'un materiau ou dispositif photovoltaique, materiau ou dispositif ainsi obteu et photopile comprenant un tel materiau ou dispositif
JP2992464B2 (ja) 1994-11-04 1999-12-20 キヤノン株式会社 集電電極用被覆ワイヤ、該集電電極用被覆ワイヤを用いた光起電力素子及びその製造方法
US5627081A (en) 1994-11-29 1997-05-06 Midwest Research Institute Method for processing silicon solar cells
EP0729189A1 (en) 1995-02-21 1996-08-28 Interuniversitair Micro-Elektronica Centrum Vzw Method of preparing solar cells and products obtained thereof
ES2202439T3 (es) 1995-04-25 2004-04-01 Von Ardenne Anlagentechnik Gmbh Sistema de pulverizacion que utiliza un magnetron cilindrico rotativo alimentado electricamente utilizando corriente alterna.
JP3459947B2 (ja) 1996-06-18 2003-10-27 シャープ株式会社 太陽電池の製造方法
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
JPH1131834A (ja) 1997-07-10 1999-02-02 Showa Shell Sekiyu Kk ガラスサンドイッチ型太陽電池パネル
US6091019A (en) 1997-09-26 2000-07-18 Sanyo Electric Co., Ltd. Photovoltaic element and manufacturing method thereof
EP0915523A3 (en) 1997-10-29 2005-11-02 Canon Kabushiki Kaisha A photovoltaic element having a back side transparent and electrically conductive layer with a light incident side surface region having a specific cross section and a module comprising said photovoltaic element
US5903382A (en) 1997-12-19 1999-05-11 Rockwell International Corporation Electrodeposition cell with high light transmission
DE19980447D2 (de) 1998-03-13 2001-04-12 Steffen Keller Solarzellenanordnung
DE69943141D1 (de) * 1998-05-20 2011-03-03 Canon Kk Photovoltaische Leistungserzeugungsvorrichtung
US20070108437A1 (en) * 1998-06-08 2007-05-17 Avto Tavkhelidze Method of fabrication of high temperature superconductors based on new mechanism of electron-electron interaction
US6468828B1 (en) 1998-07-14 2002-10-22 Sky Solar L.L.C. Method of manufacturing lightweight, high efficiency photovoltaic module
US6303853B1 (en) 1998-08-06 2001-10-16 Jx Crystals Inc. Shingle circuits for thermophotovoltaic systems
US6232545B1 (en) 1998-08-06 2001-05-15 Jx Crystals Inc. Linear circuit designs for solar photovoltaic concentrator and thermophotovoltaic applications using cell and substrate materials with matched coefficients of thermal expansion
CN1134071C (zh) 1998-11-04 2004-01-07 北京市太阳能研究所 一种太阳能电池及其制作方法
US6488824B1 (en) 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
JP2000164902A (ja) 1998-11-27 2000-06-16 Kyocera Corp 太陽電池
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US8076568B2 (en) 2006-04-13 2011-12-13 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US7635810B2 (en) 1999-03-30 2009-12-22 Daniel Luch Substrate and collector grid structures for integrated photovoltaic arrays and process of manufacture of such arrays
US6034322A (en) 1999-07-01 2000-03-07 Space Systems/Loral, Inc. Solar cell assembly
JP2001148500A (ja) 1999-11-22 2001-05-29 Sanyo Electric Co Ltd 太陽電池モジュール
US6538193B1 (en) 2000-04-21 2003-03-25 Jx Crystals Inc. Thermophotovoltaic generator in high temperature industrial process
US6586270B2 (en) 2000-06-01 2003-07-01 Canon Kabushiki Kaisha Process for producing a photovoltaic element
JP5081345B2 (ja) 2000-06-13 2012-11-28 富士フイルム株式会社 光電変換素子の製造方法
JP2002057357A (ja) 2000-08-11 2002-02-22 Fuji Electric Co Ltd 薄膜太陽電池とその製造方法
US6333457B1 (en) 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
DE10042733A1 (de) 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multikristalline laserkristallisierte Silicium-Dünnschicht-Solarzelle auf transparentem Substrat
JP3490964B2 (ja) 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
US20020189939A1 (en) 2001-06-14 2002-12-19 German John R. Alternating current rotatable sputter cathode
US6620645B2 (en) 2000-11-16 2003-09-16 G.T. Equipment Technologies, Inc Making and connecting bus bars on solar cells
JP4055358B2 (ja) 2000-12-12 2008-03-05 サンケン電気株式会社 半導体装置及びその製造方法
WO2002079814A2 (en) 2000-12-19 2002-10-10 Coventor Incorporated Method for fabricating a through-wafer optical mems device having an anti-reflective coating
CN1291502C (zh) 2001-03-19 2006-12-20 信越半导体株式会社 太阳能电池及其制造方法
US7283519B2 (en) 2001-04-13 2007-10-16 Esn, Llc Distributed edge switching system for voice-over-packet multiservice network
US7173275B2 (en) 2001-05-21 2007-02-06 Regents Of The University Of Colorado Thin-film transistors based on tunneling structures and applications
JP2003069055A (ja) 2001-06-13 2003-03-07 Sharp Corp 太陽電池セルとその製造方法
US7399385B2 (en) 2001-06-14 2008-07-15 Tru Vue, Inc. Alternating current rotatable sputter cathode
US20030000568A1 (en) 2001-06-15 2003-01-02 Ase Americas, Inc. Encapsulated photovoltaic modules and method of manufacturing same
US6713670B2 (en) 2001-08-17 2004-03-30 Composite Optics, Incorporated Electrostatically clean solar array
US6664589B2 (en) 2001-08-30 2003-12-16 Micron Technology, Inc. Technique to control tunneling currents in DRAM capacitors, cells, and devices
US6563040B2 (en) 2001-10-11 2003-05-13 Pinnacle West Capital Corporation Structure for supporting a photovoltaic module in a solar energy collection system
US6672018B2 (en) 2001-10-12 2004-01-06 Jefferson Shingleton Solar module mounting method and clip
US7469299B2 (en) 2001-10-25 2008-12-23 Verizon Business Global Llc Bridging user agent and a proxy server for supporting network services
CN1180486C (zh) 2001-10-31 2004-12-15 四川大学 透明导电膜前电极晶体硅太阳能电池
US20030116185A1 (en) 2001-11-05 2003-06-26 Oswald Robert S. Sealed thin film photovoltaic modules
JP3902534B2 (ja) 2001-11-29 2007-04-11 三洋電機株式会社 光起電力装置及びその製造方法
US6736948B2 (en) 2002-01-18 2004-05-18 Von Ardenne Anlagentechnik Gmbh Cylindrical AC/DC magnetron with compliant drive system and improved electrical and thermal isolation
US6683360B1 (en) 2002-01-24 2004-01-27 Fillfactory Multiple or graded epitaxial wafers for particle or radiation detection
US20030154667A1 (en) 2002-02-20 2003-08-21 Dinwoodie Thomas L. Shingle system
JP4070483B2 (ja) 2002-03-05 2008-04-02 三洋電機株式会社 光起電力装置並びにその製造方法
US20030173217A1 (en) 2002-03-14 2003-09-18 Sputtering Components, Inc. High-power ion sputtering magnetron
DE10213049A1 (de) 2002-03-22 2003-10-02 Dieter Wurczinger Drehbare Rohrkatode
JP2003298077A (ja) 2002-03-29 2003-10-17 Ebara Corp 太陽電池
US7388146B2 (en) 2002-04-24 2008-06-17 Jx Crystals Inc. Planar solar concentrator power module
US6803513B2 (en) 2002-08-20 2004-10-12 United Solar Systems Corporation Series connected photovoltaic module and method for its manufacture
EP1398837A1 (en) 2002-09-09 2004-03-17 Interuniversitair Microelektronica Centrum ( Imec) Photovoltaic device
US7126052B2 (en) * 2002-10-02 2006-10-24 The Boeing Company Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
JP2004134672A (ja) 2002-10-11 2004-04-30 Sony Corp 超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置
JP2004193350A (ja) 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
US6870600B2 (en) 2003-01-13 2005-03-22 Nikon Corporation Vibration-attenuation devices and methods using pressurized bellows exhibiting substantially zero lateral stiffness
JP2004235274A (ja) 2003-01-28 2004-08-19 Kyocera Corp 多結晶シリコン基板およびその粗面化法
JP2004304167A (ja) 2003-03-20 2004-10-28 Advanced Lcd Technologies Development Center Co Ltd 配線、表示装置及び、これらの形成方法
US7388147B2 (en) 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
JP4118187B2 (ja) 2003-05-09 2008-07-16 信越半導体株式会社 太陽電池の製造方法
US20050064247A1 (en) 2003-06-25 2005-03-24 Ajit Sane Composite refractory metal carbide coating on a substrate and method for making thereof
US7560750B2 (en) 2003-06-26 2009-07-14 Kyocera Corporation Solar cell device
JP3722813B2 (ja) 2003-07-08 2005-11-30 沖電気工業株式会社 埋め込み配線構造の形成方法
US7455787B2 (en) 2003-08-01 2008-11-25 Sunpower Corporation Etching of solar cell materials
US7172184B2 (en) 2003-08-06 2007-02-06 Sunpower Corporation Substrate carrier for electroplating solar cells
JP4232597B2 (ja) 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
JP2005123445A (ja) 2003-10-17 2005-05-12 Canon Inc 光起電力素子および光起電力素子の製造方法
US20050189015A1 (en) 2003-10-30 2005-09-01 Ajeet Rohatgi Silicon solar cells and methods of fabrication
JP2005159312A (ja) 2003-11-05 2005-06-16 Canon Inc 太陽電池用多結晶シリコン基板の母材および太陽電池用多結晶シリコン基板
JP2005142268A (ja) 2003-11-05 2005-06-02 Canon Inc 光起電力素子およびその製造方法
EP1687240A1 (en) 2003-12-04 2006-08-09 Dow Corning Corporation Method of removing impurities from metallurgical grade silicon to produce solar grade silicon
DE10357698A1 (de) 2003-12-09 2005-07-14 Schunk Kohlenstofftechnik Gmbh Träger für zu behandelnde Gegenstände sowie Verfahren zur Herstellung eines solchen
US7887632B2 (en) 2004-01-15 2011-02-15 Japan Science And Technology Agency Process for producing monocrystal thin film and monocrystal thin film device
US20080283115A1 (en) 2004-01-28 2008-11-20 Yuko Fukawa Solar Battery Module and Photovoltaic Generation Device
EP1560272B1 (en) 2004-01-29 2016-04-27 Panasonic Intellectual Property Management Co., Ltd. Solar cell module
US20060060238A1 (en) 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US20050252544A1 (en) 2004-05-11 2005-11-17 Ajeet Rohatgi Silicon solar cells and methods of fabrication
EP1598874A1 (en) 2004-05-19 2005-11-23 Dutch Space B.V. Solar cell assembly
US7772484B2 (en) 2004-06-01 2010-08-10 Konarka Technologies, Inc. Photovoltaic module architecture
KR100624765B1 (ko) 2004-06-25 2006-09-20 한국전기연구원 광감응형 태양전지와 ｐ-ｎ 접합 실리콘계 태양전지의복합구조를 갖는 태양전지 및 그 제조방법
KR100659044B1 (ko) 2004-07-05 2006-12-19 전자부품연구원 산화아연 박막을 가지는 태양전지 및 그 제조 방법
EP1766490A4 (en) 2004-07-13 2007-12-05 Univ Central Queensland DEVICE FOR DETECTING MAXIMUM DISTRIBUTED POWER FOR SOLAR PANELS
US7087906B2 (en) 2004-09-08 2006-08-08 Nikon Corporation Bellows with spring anti-gravity device
US20060130891A1 (en) 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US7432119B2 (en) 2005-01-11 2008-10-07 Semileds Corporation Light emitting diode with conducting metal substrate
FR2880989B1 (fr) 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US7723215B2 (en) 2005-02-11 2010-05-25 Sarnoff Corporation Dark current reduction in back-illuminated imaging sensors and method of fabricating same
US8115093B2 (en) 2005-02-15 2012-02-14 General Electric Company Layer-to-layer interconnects for photoelectric devices and methods of fabricating the same
US20080121932A1 (en) 2006-09-18 2008-05-29 Pushkar Ranade Active regions with compatible dielectric layers
EP2439780B1 (en) 2005-02-25 2019-10-02 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic cell
DE102005013668B3 (de) 2005-03-14 2006-11-16 Universität Stuttgart Solarzelle
US7759158B2 (en) 2005-03-22 2010-07-20 Applied Materials, Inc. Scalable photovoltaic cell and solar panel manufacturing with improved wiring
JP5042819B2 (ja) 2005-03-29 2012-10-03 京セラ株式会社 太陽電池素子の梱包方法
US7494607B2 (en) 2005-04-14 2009-02-24 E.I. Du Pont De Nemours And Company Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
DE102005019225B4 (de) 2005-04-20 2009-12-31 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
JP5301758B2 (ja) 2005-05-19 2013-09-25 信越半導体株式会社 太陽電池
US8039731B2 (en) 2005-06-06 2011-10-18 General Electric Company Photovoltaic concentrator for solar energy system
EP1734589B1 (en) 2005-06-16 2019-12-18 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing photovoltaic module
US20070023082A1 (en) 2005-07-28 2007-02-01 Venkatesan Manivannan Compositionally-graded back contact photovoltaic devices and methods of fabricating such devices
US7906723B2 (en) 2008-04-30 2011-03-15 General Electric Company Compositionally-graded and structurally-graded photovoltaic devices and methods of fabricating such devices
US20070023081A1 (en) 2005-07-28 2007-02-01 General Electric Company Compositionally-graded photovoltaic device and fabrication method, and related articles
JP5171001B2 (ja) 2005-09-30 2013-03-27 三洋電機株式会社 太陽電池モジュールの製造方法、太陽電池セルおよび太陽電池モジュール
WO2007120197A2 (en) 2005-11-04 2007-10-25 Dow Corning Corporation Encapsulation of photovoltaic cells
KR20080075156A (ko) 2005-11-07 2008-08-14 어플라이드 머티어리얼스, 인코포레이티드 광전지 콘택 및 배선 형성 방법
JP5249040B2 (ja) 2005-11-18 2013-07-31 レプリソールス グループ エスアーエス 電極およびその形成方法
EP1806684A1 (en) 2005-12-05 2007-07-11 Sap Ag Creation of structured order items during availability check
US20070132034A1 (en) 2005-12-14 2007-06-14 Giuseppe Curello Isolation body for semiconductor devices and method to form the same
US20070137699A1 (en) 2005-12-16 2007-06-21 General Electric Company Solar cell and method for fabricating solar cell
US8196360B2 (en) 2006-01-12 2012-06-12 Msr Innovations Inc. Photovoltaic solar roof tile assembly system
JP5025135B2 (ja) 2006-01-24 2012-09-12 三洋電機株式会社 光起電力モジュール
US7769887B1 (en) 2006-02-03 2010-08-03 Sprint Communications Company L.P. Opportunistic data transfer over heterogeneous wireless networks
DE102006009194A1 (de) 2006-02-22 2007-08-23 Siegfried Gutfleisch Anordnung aus einer tragenden Gebäudestruktur und einem Solarzellenaufbau
US8168880B2 (en) 2006-04-26 2012-05-01 Certainteed Corporation Shingle with photovoltaic element(s) and array of same laid up on a roof
US7737357B2 (en) 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US8571012B2 (en) 2006-05-12 2013-10-29 Oracle International Corporation Customized sip routing to cross firewalls
US20070283996A1 (en) 2006-06-13 2007-12-13 Miasole Photovoltaic module with insulating interconnect carrier
US20070283997A1 (en) 2006-06-13 2007-12-13 Miasole Photovoltaic module with integrated current collection and interconnection
JP4290747B2 (ja) 2006-06-23 2009-07-08 シャープ株式会社 光電変換素子およびインターコネクタ付き光電変換素子
US20080000522A1 (en) 2006-06-30 2008-01-03 General Electric Company Photovoltaic device which includes all-back-contact configuration; and related processes
WO2008019349A2 (en) 2006-08-04 2008-02-14 Solopower, Inc. Thin film solar cell with finger pattern
US7915517B2 (en) 2006-08-16 2011-03-29 Lau Po K Bifacial photovoltaic devices
US20080047602A1 (en) 2006-08-22 2008-02-28 Guardian Industries Corp. Front contact with high-function TCO for use in photovoltaic device and method of making same
US7893348B2 (en) 2006-08-25 2011-02-22 General Electric Company Nanowires in thin-film silicon solar cells
US20080053519A1 (en) 2006-08-30 2008-03-06 Miasole Laminated photovoltaic cell
DE102006042617B4 (de) 2006-09-05 2010-04-08 Q-Cells Se Verfahren zur Erzeugung von lokalen Kontakten
FR2906406B1 (fr) 2006-09-26 2008-12-19 Commissariat Energie Atomique Procede de realisation de cellule photovoltaique a heterojonction en face arriere.
US7999174B2 (en) 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
US20080264477A1 (en) 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
US20080092947A1 (en) 2006-10-24 2008-04-24 Applied Materials, Inc. Pulse plating of a low stress film on a solar cell substrate
DE102006051735A1 (de) 2006-10-30 2008-05-08 Merck Patent Gmbh Druckfähiges Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten
US8013474B2 (en) 2006-11-27 2011-09-06 Xslent Energy Technologies, Llc System and apparatuses with multiple power extractors coupled to different power sources
US20080121276A1 (en) 2006-11-29 2008-05-29 Applied Materials, Inc. Selective electroless deposition for solar cells
JP2008135655A (ja) 2006-11-29 2008-06-12 Sanyo Electric Co Ltd 太陽電池モジュール、太陽電池モジュールの製造方法、及び太陽電池セル
US7799182B2 (en) 2006-12-01 2010-09-21 Applied Materials, Inc. Electroplating on roll-to-roll flexible solar cell substrates
JP4429306B2 (ja) 2006-12-25 2010-03-10 三洋電機株式会社 太陽電池セル及び太陽電池モジュール
US7825329B2 (en) 2007-01-03 2010-11-02 Solopower, Inc. Thin film solar cell manufacturing and integration
CN101226968A (zh) 2007-01-17 2008-07-23 易斌宣 降低聚光太阳能电池串联电阻阻值的方法及由该方法获得的聚光太阳能电池
US20080173350A1 (en) 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173347A1 (en) 2007-01-23 2008-07-24 General Electric Company Method And Apparatus For A Semiconductor Structure
EP2654089A3 (en) 2007-02-16 2015-08-12 Nanogram Corporation Solar cell structures, photovoltaic modules and corresponding processes
JP2008205137A (ja) 2007-02-19 2008-09-04 Sanyo Electric Co Ltd 太陽電池及び太陽電池モジュール
US7534632B2 (en) 2007-02-20 2009-05-19 Advanced Chip Engineering Technology Inc. Method for circuits inspection and method of the same
DE202007002897U1 (de) 2007-02-28 2008-07-10 SCHÜCO International KG Photovoltaisches Solarmodul
US7968792B2 (en) 2007-03-05 2011-06-28 Seagate Technology Llc Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
KR20100015622A (ko) 2007-03-16 2010-02-12 비피 코포레이션 노쓰 아메리카 인코포레이티드 태양 전지
EP1973167B1 (en) 2007-03-19 2018-06-13 Panasonic Intellectual Property Management Co., Ltd. Photovoltaic device and method of manufacturing the same
FR2914785B1 (fr) 2007-04-06 2009-05-15 Saint Gobain Ct Recherches Revetement de toiture photovoltaique
US8471141B2 (en) 2007-05-07 2013-06-25 Nanosolar, Inc Structures for low cost, reliable solar roofing
US20080308145A1 (en) 2007-06-12 2008-12-18 Guardian Industries Corp Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same
KR101492946B1 (ko) 2007-07-26 2015-02-13 주성엔지니어링(주) 결정질 실리콘 태양전지와 그 제조방법 및 제조시스템
JP5288790B2 (ja) 2007-08-02 2013-09-11 三洋電機株式会社 太陽電池モジュール及びその製造方法
JP5147332B2 (ja) 2007-08-27 2013-02-20 三洋電機株式会社 太陽電池モジュール、太陽電池、及びこれらの製造方法
US20090056797A1 (en) 2007-08-28 2009-03-05 Blue Square Energy Incorporated Photovoltaic Thin-Film Solar Cell and Method Of Making The Same
US7709730B2 (en) 2007-09-05 2010-05-04 Skyline Solar, Inc. Dual trough concentrating solar photovoltaic module
US7749883B2 (en) 2007-09-20 2010-07-06 Fry's Metals, Inc. Electroformed stencils for solar cell front side metallization
CN101779290B (zh) 2007-09-25 2013-02-27 第一太阳能有限公司 包括界面层的光伏器件
TWI371112B (en) 2007-10-02 2012-08-21 Univ Chang Gung Solar energy photoelectric conversion apparatus
WO2009047815A1 (en) 2007-10-12 2009-04-16 System S.P.A. A process for connecting photovoltaic cells in series, a photovoltaic cell connectable in series using the process, and a module obtained with the process
GB2453746A (en) 2007-10-16 2009-04-22 Renewable Energy Corp Asa Parallel interconnection of solar cell units
EP2193527A1 (en) 2007-10-18 2010-06-09 E. I. du Pont de Nemours and Company Lead-free conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive
WO2009061963A2 (en) 2007-11-06 2009-05-14 Krause Richard H Photovoltaic roofing systems and methods for installing them
US20090139512A1 (en) 2007-11-30 2009-06-04 Lima Daniel D De Solar Line Boiler Roof
AT506129B1 (de) 2007-12-11 2009-10-15 Heic Hornbachner En Innovation Gekrümmte photovoltaik-module und verfahren zu deren herstellung
US8021487B2 (en) 2007-12-12 2011-09-20 Veeco Instruments Inc. Wafer carrier with hub
TWI379425B (en) 2007-12-13 2012-12-11 Nexpower Technology Corp Translucent solar cell and manufacturing method thereof
US9263895B2 (en) 2007-12-21 2016-02-16 Sunpower Corporation Distributed energy conversion systems
CN100580957C (zh) * 2007-12-28 2010-01-13 中国科学院上海技术物理研究所 亚稳态辅助量子点共振隧穿二极管及工作条件
WO2009094578A2 (en) 2008-01-24 2009-07-30 Applied Materials, Inc. Improved hit solar cell structure
US20090188561A1 (en) * 2008-01-25 2009-07-30 Emcore Corporation High concentration terrestrial solar array with III-V compound semiconductor cell
US8222516B2 (en) 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
WO2009105190A2 (en) 2008-02-20 2009-08-27 Corning Incorporated Solar heat collection element with glass-ceramic central tube
US9054254B2 (en) 2008-02-21 2015-06-09 Sharp Kabushiki Kaisha Solar cell and method of manufacturing solar cell
US8187906B2 (en) 2008-02-28 2012-05-29 Sunlight Photonics Inc. Method for fabricating composite substances for thin film electro-optical devices
US7977220B2 (en) 2008-03-05 2011-07-12 Sri International Substrates for silicon solar cells and methods of producing the same
US20100043863A1 (en) 2008-03-20 2010-02-25 Miasole Interconnect assembly
US7833808B2 (en) 2008-03-24 2010-11-16 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
US20090250108A1 (en) 2008-04-02 2009-10-08 Applied Materials, Inc. Silicon carbide for crystalline silicon solar cell surface passivation
US20090255574A1 (en) 2008-04-14 2009-10-15 Sierra Solar Power, Inc. Solar cell fabricated by silicon liquid-phase deposition
CN102113130A (zh) 2008-04-29 2011-06-29 应用材料股份有限公司 使用单石模块组合技术制造的光伏打模块
US20090283145A1 (en) 2008-05-13 2009-11-19 Kim Yun-Gi Semiconductor Solar Cells Having Front Surface Electrodes
TWI513014B (zh) 2008-05-19 2015-12-11 Tatung Co 高性能光電元件
US20090293948A1 (en) * 2008-05-28 2009-12-03 Stichting Energieonderzoek Centrum Nederland Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell
US20100229914A1 (en) 2008-06-04 2010-09-16 Solexant Corp. Solar cells with shunt resistance
KR20110042052A (ko) 2008-06-11 2011-04-22 솔라 임플란트 테크놀로지스 아이엔씨. 패시팅 및 이온 주입을 이용한 솔라 셀 제작
EP2308097A2 (en) 2008-06-12 2011-04-13 Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. Solar volumetric structure
US8338218B2 (en) 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
DE102008030693A1 (de) 2008-07-01 2010-01-14 Institut Für Solarenergieforschung Gmbh Heterojunction-Solarzelle mit Absorber mit integriertem Dotierprofil
WO2010000855A2 (en) 2008-07-03 2010-01-07 Imec Multi -junction photovoltaic module and the processing thereof
KR101244027B1 (ko) 2008-07-08 2013-03-14 시너스 테크놀리지, 인코포레이티드 플렉서블 태양전지 제조방법
TWI390756B (zh) 2008-07-16 2013-03-21 Applied Materials Inc 使用摻質層遮罩之混合異接面太陽能電池製造
KR101065752B1 (ko) 2008-08-19 2011-09-19 주식회사 티지솔라 태양전지모듈 및 그 제조방법
KR20100026291A (ko) 2008-08-29 2010-03-10 삼성전자주식회사 박막 태양 전지 모듈 및 그 제조 방법
US20150075599A1 (en) 2013-09-19 2015-03-19 Zena Technologies, Inc. Pillar structured multijunction photovoltaic devices
US8637761B2 (en) 2008-09-16 2014-01-28 Silevo, Inc. Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
US8088675B2 (en) 2008-09-19 2012-01-03 Applied Materials, Inc. Methods of making an emitter having a desired dopant profile
US8070925B2 (en) 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US20100108134A1 (en) 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin two sided single crystal solar cell and manufacturing process thereof
US8586857B2 (en) 2008-11-04 2013-11-19 Miasole Combined diode, lead assembly incorporating an expansion joint
WO2010056764A2 (en) 2008-11-12 2010-05-20 Mehrdad Nikoonahad High efficiency solar panel and system
US9150966B2 (en) 2008-11-14 2015-10-06 Palo Alto Research Center Incorporated Solar cell metallization using inline electroless plating
KR100993511B1 (ko) 2008-11-19 2010-11-12 엘지전자 주식회사 태양 전지 및 그 제조 방법
US20100132774A1 (en) 2008-12-11 2010-06-03 Applied Materials, Inc. Thin Film Silicon Solar Cell Device With Amorphous Window Layer
TW201036183A (en) 2008-12-16 2010-10-01 Solopower Inc Thin film photovoltaic module manufacturing methods and structures
DE102008055028A1 (de) 2008-12-19 2010-07-01 Q-Cells Se Solarzelle
KR101539047B1 (ko) 2008-12-24 2015-07-23 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 광기전력 변환 소자 및 그의 제조방법
US7945663B2 (en) 2008-12-29 2011-05-17 Genband Inc. Systems, methods, and computer program products for adaptively adjusting a registration interval of an endpoint
US20100175743A1 (en) 2009-01-09 2010-07-15 Solopower, Inc. Reliable thin film photovoltaic module structures
US20100186802A1 (en) 2009-01-27 2010-07-29 Peter Borden Hit solar cell structure
DE202009001817U1 (de) 2009-01-31 2009-06-04 Roth & Rau Ag Substratträger zur Halterung einer Vielzahl von Solarzellenwafern
US9029181B2 (en) 2009-02-02 2015-05-12 Hanergy Hi-Tech Power (Hk) Limited Two-part screen printing for solar collection grid
CA2655007C (en) 2009-02-20 2017-06-27 Queen's University At Kingston Photovoltaic cell inverter
DE102009012539A1 (de) 2009-03-10 2010-09-23 Tyco Electronics Amp Gmbh Verbindungsvorrichtung zum Anschluss an ein Solarmodul und Solarmodul mit einer solchen Verbindungsvorrichtung
US8283557B2 (en) 2009-03-10 2012-10-09 Silevo, Inc. Heterojunction solar cell based on epitaxial crystalline-silicon thin film on metallurgical silicon substrate design
US8182662B2 (en) 2009-03-27 2012-05-22 Sputtering Components, Inc. Rotary cathode for magnetron sputtering apparatus
WO2010125679A1 (ja) 2009-04-30 2010-11-04 三菱電機株式会社 太陽電池セル
US20100279492A1 (en) 2009-05-02 2010-11-04 Atomic Energy Council-Institute Of Nuclear Energy Research Method of Fabricating Upgraded Metallurgical Grade Silicon by External Gettering Procedure
US20100282306A1 (en) * 2009-05-08 2010-11-11 Emcore Solar Power, Inc. Multijunction Solar Cells with Group IV/III-V Hybrid Alloys
JP4797083B2 (ja) 2009-05-15 2011-10-19 シャープ株式会社 薄膜太陽電池モジュール
WO2010133224A2 (de) 2009-05-18 2010-11-25 Solarion Ag Anordnung und verschaltung, sowie verfahren zur verschaltung von flächenartigen solarzellen
US20100300507A1 (en) 2009-06-02 2010-12-02 Sierra Solar Power, Inc. High efficiency low cost crystalline-si thin film solar module
US9537032B2 (en) 2009-06-02 2017-01-03 Solarcity Corporation Low-cost high-efficiency solar module using epitaxial Si thin-film absorber and double-sided heterojunction solar cell with integrated module fabrication
US20110146781A1 (en) 2009-06-26 2011-06-23 E.I. Du Pont De Nemours And Company Process of forming a grid cathode on the front-side of a silicon wafer
US20110005920A1 (en) 2009-07-13 2011-01-13 Seagate Technology Llc Low Temperature Deposition of Amorphous Thin Films
US20110220194A1 (en) 2009-07-14 2011-09-15 Spectrawatt, Inc. Light conversion efficiency-enhanced solar cell fabricated with downshifting nanomaterial
US8258050B2 (en) 2009-07-17 2012-09-04 Hewlett-Packard Development Company, L.P. Method of making light trapping crystalline structures
US8343795B2 (en) 2009-09-12 2013-01-01 Yuhao Luo Method to break and assemble solar cells
KR101656118B1 (ko) 2009-09-18 2016-09-08 파나소닉 아이피 매니지먼트 가부시키가이샤 태양 전지, 태양 전지 모듈 및 태양 전지 시스템
DE102009043047A1 (de) 2009-09-28 2011-04-14 Schott Solar Ag Solarzelle
US20110073175A1 (en) 2009-09-29 2011-03-31 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having emitter formed at light-facing and back surfaces
WO2011046664A2 (en) 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
KR101301029B1 (ko) 2009-10-30 2013-08-28 엘지전자 주식회사 박막 태양전지 모듈
JP5691154B2 (ja) * 2009-11-04 2015-04-01 住友電気工業株式会社 受光素子アレイ及びエピタキシャルウェハ
JP5706439B2 (ja) 2009-12-11 2015-04-22 カーゲーテー・グラフィート・テヒノロギー・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 基板支持体
US20130000705A1 (en) 2009-12-16 2013-01-03 Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. Photovoltaic device and method of its fabrication
US8759664B2 (en) 2009-12-28 2014-06-24 Hanergy Hi-Tech Power (Hk) Limited Thin film solar cell strings
TWI425597B (zh) 2009-12-31 2014-02-01 Kingpak Tech Inc 具有黑色膠體之影像感測器封裝結構
US8895838B1 (en) 2010-01-08 2014-11-25 Magnolia Solar, Inc. Multijunction solar cell employing extended heterojunction and step graded antireflection structures and methods for constructing the same
TWI396292B (zh) 2010-01-11 2013-05-11 Tatung Co 太陽能電池及其製造方法
CN102860030B (zh) 2010-01-12 2017-02-08 美国莱迪思半导体公司 家庭多媒体网络中的视频管理和控制
CN102130190A (zh) 2010-01-20 2011-07-20 美国迅力光能公司 具有改进型电流收集系统的光伏电池
EP2362430A1 (en) 2010-02-18 2011-08-31 SAVIO S.p.A. A photovoltaic module
EP2541594A4 (en) 2010-02-24 2016-12-07 Toyota Motor Co Ltd SEMICONDUCTOR MODULE MANUFACTURING METHOD, SEMICONDUCTOR MODULE AND MANUFACTURING METHOD
US20110220182A1 (en) 2010-03-12 2011-09-15 Rfmarq, Inc. Solar Panel Tracking and Performance Monitoring Through Wireless Communication
EP2553137B1 (en) 2010-03-31 2016-10-05 Mustang Vacuum Systems, Inc. Rotating magnetron sputtering cathode apparatus and method of depositing material with the same
US20110245957A1 (en) 2010-04-06 2011-10-06 Applied Materials, Inc. Advanced platform for processing crystalline silicon solar cells
WO2011127318A2 (en) 2010-04-07 2011-10-13 Applied Materials, Inc. Use of al barrier layer to produce high haze zno films on glass substrates
DE102010028189B4 (de) 2010-04-26 2018-09-27 Solarworld Industries Gmbh Solarzelle
US8686283B2 (en) 2010-05-04 2014-04-01 Silevo, Inc. Solar cell with oxide tunneling junctions
US20120318340A1 (en) 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US20110277816A1 (en) 2010-05-11 2011-11-17 Sierra Solar Power, Inc. Solar cell with shade-free front electrode
US9240513B2 (en) 2010-05-14 2016-01-19 Solarcity Corporation Dynamic support system for quartz process chamber
US20110277825A1 (en) 2010-05-14 2011-11-17 Sierra Solar Power, Inc. Solar cell with metal grid fabricated by electroplating
US20110308573A1 (en) 2010-06-21 2011-12-22 Fraunhofer USA, Inc. Center for Sustainable Energy Systems Devices and methods to create a diffuse reflection surface
TW201203574A (en) 2010-07-14 2012-01-16 Solapoint Corp Solar cell device having an air-bridge type contact
US8846451B2 (en) 2010-07-30 2014-09-30 Applied Materials, Inc. Methods for depositing metal in high aspect ratio features
US8883552B2 (en) 2010-08-11 2014-11-11 Crystal Solar Inc. MWT architecture for thin SI solar cells
US9035626B2 (en) 2010-08-18 2015-05-19 Volterra Semiconductor Corporation Switching circuits for extracting power from an electric power source and associated methods
JP2013537000A (ja) 2010-09-07 2013-09-26 ダウ グローバル テクノロジーズ エルエルシー 改良された光起電力セルアセンブリ
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US8221600B2 (en) 2010-09-23 2012-07-17 Sunpower Corporation Sealed substrate carrier for electroplating
US20120080083A1 (en) 2010-09-30 2012-04-05 Twin Creeks Technologies, Inc. Semiconductor assembly with a metal oxide layer having intermediate refractive index
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
KR101275575B1 (ko) 2010-10-11 2013-06-14 엘지전자 주식회사 후면전극형 태양전지 및 이의 제조 방법
US20120125391A1 (en) 2010-11-19 2012-05-24 Solopower, Inc. Methods for interconnecting photovoltaic cells
JP5857237B2 (ja) 2010-11-29 2016-02-10 パナソニックＩｐマネジメント株式会社 太陽電池セル及び太陽電池モジュール
CN102088040A (zh) 2010-12-09 2011-06-08 泰通(泰州)工业有限公司 双面电池组件
DE102010061317B4 (de) 2010-12-17 2022-10-06 Hanwha Q Cells Gmbh Siebdruckmaske zur Herstellung einer Elektrodenfingerstruktur für Wafersolarzellen und Verfahren zur Herstellung einer Wafersolarzelle unter Einsatz einer solchen Siebdruckmaske
US20120152349A1 (en) 2010-12-17 2012-06-21 Solopower, Inc. Junction box attachment for photovoltaic thin film devices
US20120325671A2 (en) 2010-12-17 2012-12-27 Tel Nexx, Inc. Electroplated lead-free bump deposition
RU2597573C2 (ru) 2011-01-31 2016-09-10 Син-Эцу Кемикал Ко., Лтд. Трафаретная печатная форма для солнечного элемента и способ печати электрода солнечного элемента
WO2012135052A1 (en) 2011-03-25 2012-10-04 Kevin Michael Coakley Foil-based interconnect for rear-contact solar cells
US20120192932A1 (en) 2011-03-25 2012-08-02 Neo Solar Power Corp. Solar cell and its electrode structure
US8525191B2 (en) 2011-04-01 2013-09-03 Sabic Innovative Plastics Ip B.V. Optoelectronic devices and coatings therefore
US20130112239A1 (en) 2011-04-14 2013-05-09 Cool Earh Solar Solar energy receiver
US20120285517A1 (en) 2011-05-09 2012-11-15 International Business Machines Corporation Schottky barrier solar cells with high and low work function metal contacts
US20130130430A1 (en) 2011-05-20 2013-05-23 Solexel, Inc. Spatially selective laser annealing applications in high-efficiency solar cells
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
US20120318319A1 (en) 2011-06-17 2012-12-20 Solopower, Inc. Methods of interconnecting thin film solar cells
US20120325282A1 (en) 2011-06-24 2012-12-27 Solopower, Inc. Solar cells with grid wire interconnections
EP2546889B1 (en) 2011-07-12 2020-06-17 Airbus Defence and Space GmbH Solar cell assembly and method of fabrication of solar cell assembly
US20130213469A1 (en) 2011-08-05 2013-08-22 Solexel, Inc. High efficiency solar cell structures and manufacturing methods
US20140318611A1 (en) 2011-08-09 2014-10-30 Solexel, Inc. Multi-level solar cell metallization
US20130228221A1 (en) 2011-08-05 2013-09-05 Solexel, Inc. Manufacturing methods and structures for large-area thin-film solar cells and other semiconductor devices
CN103918088B (zh) 2011-08-09 2017-07-04 速力斯公司 利用细晶半导体吸收体的高效太阳能光伏电池及模块
WO2013020590A1 (de) 2011-08-09 2013-02-14 Kioto Photovoltaics Gmbh Rechteckige solarzelle und zugehörige solarzellen-anordnung
US20150171230A1 (en) 2011-08-09 2015-06-18 Solexel, Inc. Fabrication methods for back contact solar cells
KR101969032B1 (ko) 2011-09-07 2019-04-15 엘지전자 주식회사 태양전지 및 이의 제조방법
DE112011105671B4 (de) 2011-09-28 2023-08-03 Panasonic Intellectual Property Management Co., Ltd. Solarzelle und Verfahren zum Fertigen einer Solarzelle
US20130096710A1 (en) 2011-10-17 2013-04-18 Solopower, Inc. Tracking system and method for solar cell manufacturing
US8853525B2 (en) 2011-11-14 2014-10-07 Prism Solar Technologies, Inc. Frameless photovoltaic module
KR20130081484A (ko) 2012-01-09 2013-07-17 엘지전자 주식회사 박막 태양 전지
KR101449942B1 (ko) 2012-01-17 2014-10-17 주식회사 호진플라텍 전기도금 및 광 유도 도금을 병행하는 태양전지 기판용 도금장치 및 도금 방법
JP2013161855A (ja) 2012-02-02 2013-08-19 Sharp Corp 太陽電池用インターコネクタおよびインターコネクタ付き太陽電池セル
KR101894585B1 (ko) 2012-02-13 2018-09-04 엘지전자 주식회사 태양전지
US20130206221A1 (en) 2012-02-13 2013-08-15 John Anthony Gannon Solar cell with metallization compensating for or preventing cracking
US10741712B2 (en) 2012-02-15 2020-08-11 Alta Devices, Inc. Photovoltaic module containing shingled photovoltaic tiles and fabrication processes thereof
US9379269B2 (en) 2012-02-29 2016-06-28 Bakersun Bifacial crystalline silicon solar panel with reflector
US9911881B2 (en) 2012-04-03 2018-03-06 Flisom Ag Thin-film photovoltaic device with wavy monolithic interconnects
KR101918738B1 (ko) 2012-04-17 2018-11-15 엘지전자 주식회사 태양 전지
JP2013233553A (ja) 2012-05-07 2013-11-21 Npc Inc 配線材接続装置
JP5546616B2 (ja) 2012-05-14 2014-07-09 セリーボ， インコーポレイテッド トンネル酸化物を有する後面接合太陽電池
DE102012010151A1 (de) 2012-05-24 2013-11-28 Manz Ag Thermisch optimierter elektrostatischer Substrathalter
JP5709797B2 (ja) 2012-05-25 2015-04-30 三菱電機株式会社 太陽電池セルおよび太陽電池モジュール
US20140000682A1 (en) 2012-06-27 2014-01-02 E I Du Pont De Nemours And Company Integrated back-sheet for back contact photovoltaic module
US9227259B2 (en) 2012-08-22 2016-01-05 International Business Machines Corporation Increasing the efficiency of solar cells by transfer of solder
US9050517B2 (en) 2012-09-05 2015-06-09 Bryan P. Oliver Ski training device and method
US20140102524A1 (en) 2012-10-15 2014-04-17 Silevo, Inc. Novel electron collectors for silicon photovoltaic cells
US9812590B2 (en) 2012-10-25 2017-11-07 Sunpower Corporation Bifacial solar cell module with backside reflector
US20140124014A1 (en) 2012-11-08 2014-05-08 Cogenra Solar, Inc. High efficiency configuration for solar cell string
US9780253B2 (en) 2014-05-27 2017-10-03 Sunpower Corporation Shingled solar cell module
US9947820B2 (en) 2014-05-27 2018-04-17 Sunpower Corporation Shingled solar cell panel employing hidden taps
US20140124013A1 (en) 2012-11-08 2014-05-08 Cogenra Solar, Inc. High efficiency configuration for solar cell string
US9287431B2 (en) 2012-12-10 2016-03-15 Alliance For Sustainable Energy, Llc Superstrate sub-cell voltage-matched multijunction solar cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
WO2014117138A1 (en) 2013-01-28 2014-07-31 Global Solar Energy, Inc. Photovoltaic interconnect systems, devices, and methods
US10615297B2 (en) 2013-02-22 2020-04-07 International Business Machines Corporation Electrode formation for heterojunction solar cells
US20140345674A1 (en) 2013-05-24 2014-11-27 Silevo, Inc. Moisture ingress resistant photovoltaic module
US20150096613A1 (en) 2013-06-24 2015-04-09 Sino-American Silicon Products Inc. Photovoltaic device and method of manufacturing the same
KR101622089B1 (ko) 2013-07-05 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9831369B2 (en) 2013-10-24 2017-11-28 National Technology & Engineering Solutions Of Sandia, Llc Photovoltaic power generation system with photovoltaic cells as bypass diodes
US20150179834A1 (en) 2013-12-20 2015-06-25 Mukul Agrawal Barrier-less metal seed stack and contact
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules
CN108091703B (zh) 2014-05-27 2021-04-09 迈可晟太阳能有限公司 叠盖式太阳能电池模块
US20150349176A1 (en) 2014-05-27 2015-12-03 Cogenra Solar, Inc. High voltage solar panel
US20160233352A1 (en) 2014-12-05 2016-08-11 Solarcity Corporation Photovoltaic electrode design with contact pads for cascaded application
CN104409402B (zh) 2014-12-30 2018-06-19 厦门市三安光电科技有限公司 用于led外延晶圆制程的石墨承载盘

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008045522A1 (de) * 2008-09-03 2010-03-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Heterosolarzelle und Verfahren zur Herstellung von Heterosolarzellen
WO2010075606A1 (en) * 2008-12-29 2010-07-08 Shaun Joseph Cunningham Improved photo-voltaic device
WO2010123974A1 (en) * 2009-04-21 2010-10-28 Tetrasun, Inc. High-efficiency solar cell structures and methods of manufacture
WO2011005447A2 (en) * 2009-06-22 2011-01-13 International Business Machines Corporation Semiconductor optical detector structure

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