CN102142488A - 半导体元件及其制造方法 - Google Patents
半导体元件及其制造方法 Download PDFInfo
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- CN102142488A CN102142488A CN2010106201449A CN201010620144A CN102142488A CN 102142488 A CN102142488 A CN 102142488A CN 2010106201449 A CN2010106201449 A CN 2010106201449A CN 201010620144 A CN201010620144 A CN 201010620144A CN 102142488 A CN102142488 A CN 102142488A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Geometry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (4)
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JP2003031416 | 2003-02-07 | ||
JP2003-031416 | 2003-02-07 | ||
JP2003339421A JP2005109087A (ja) | 2003-09-30 | 2003-09-30 | 窒化物系半導体レーザ素子 |
JP2003-339421 | 2003-09-30 |
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CNB2004100048488A Division CN100377454C (zh) | 2003-02-07 | 2004-02-06 | 半导体元件及其制造方法 |
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CN102142488B CN102142488B (zh) | 2014-07-09 |
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CN201010620144.9A Expired - Fee Related CN102142488B (zh) | 2003-02-07 | 2004-02-06 | 半导体元件及其制造方法 |
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US (4) | US7372077B2 (zh) |
CN (3) | CN102148295B (zh) |
TW (1) | TWI236791B (zh) |
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2004
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- 2004-02-04 TW TW093102474A patent/TWI236791B/zh not_active IP Right Cessation
- 2004-02-06 CN CN201010619582.3A patent/CN102148295B/zh not_active Expired - Fee Related
- 2004-02-06 CN CN201010620144.9A patent/CN102142488B/zh not_active Expired - Fee Related
- 2004-02-06 CN CNB2004100048488A patent/CN100377454C/zh not_active Expired - Fee Related
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2007
- 2007-03-20 US US11/723,449 patent/US8101465B2/en not_active Expired - Fee Related
- 2007-10-30 US US11/976,972 patent/US7589357B2/en not_active Expired - Fee Related
-
2011
- 2011-12-30 US US13/341,668 patent/US20120108011A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002033512A (ja) * | 2000-07-13 | 2002-01-31 | Nichia Chem Ind Ltd | 窒化物半導体発光ダイオード |
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US20080073664A1 (en) | 2008-03-27 |
TW200419862A (en) | 2004-10-01 |
CN102148295A (zh) | 2011-08-10 |
TWI236791B (en) | 2005-07-21 |
CN102148295B (zh) | 2016-03-16 |
CN100377454C (zh) | 2008-03-26 |
US7589357B2 (en) | 2009-09-15 |
CN102142488B (zh) | 2014-07-09 |
US20120108011A1 (en) | 2012-05-03 |
US20040245540A1 (en) | 2004-12-09 |
CN1519998A (zh) | 2004-08-11 |
US8101465B2 (en) | 2012-01-24 |
US20070292979A1 (en) | 2007-12-20 |
US7372077B2 (en) | 2008-05-13 |
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