CN101859711B - 非晶氧化物膜的制造方法 - Google Patents

非晶氧化物膜的制造方法 Download PDF

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Publication number
CN101859711B
CN101859711B CN2010102032047A CN201010203204A CN101859711B CN 101859711 B CN101859711 B CN 101859711B CN 2010102032047 A CN2010102032047 A CN 2010102032047A CN 201010203204 A CN201010203204 A CN 201010203204A CN 101859711 B CN101859711 B CN 101859711B
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film
hydrogen
amorphous oxide
channel layer
transistor
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CN101859711A (zh
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岩崎达哉
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
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CN2010102032047A 2005-09-06 2006-09-05 非晶氧化物膜的制造方法 Expired - Fee Related CN101859711B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005-258263 2005-09-06
JP2005258263 2005-09-06
JP2006221552A JP4560502B2 (ja) 2005-09-06 2006-08-15 電界効果型トランジスタ
JP2006-221552 2006-08-15

Related Parent Applications (1)

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CN2006800325346A Division CN101258607B (zh) 2005-09-06 2006-09-05 使用非晶氧化物膜作为沟道层的场效应晶体管、使用非晶氧化物膜作为沟道层的场效应晶体管的制造方法、以及非晶氧化物膜的制造方法

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CN101859711A CN101859711A (zh) 2010-10-13
CN101859711B true CN101859711B (zh) 2012-07-04

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CN201110356335.3A Active CN102496577B (zh) 2005-09-06 2006-09-05 非晶氧化物膜的制造方法

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US (4) US7791074B2 (cg-RX-API-DMAC7.html)
EP (3) EP1915784A1 (cg-RX-API-DMAC7.html)
JP (1) JP4560502B2 (cg-RX-API-DMAC7.html)
KR (1) KR101051204B1 (cg-RX-API-DMAC7.html)
CN (2) CN101859711B (cg-RX-API-DMAC7.html)
WO (1) WO2007029844A1 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
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US9299723B2 (en) 2010-05-21 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with light-blocking layers
US9331156B2 (en) 2011-12-15 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

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* Cited by examiner, † Cited by third party
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