CN101494223A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN101494223A CN101494223A CNA2009100098884A CN200910009888A CN101494223A CN 101494223 A CN101494223 A CN 101494223A CN A2009100098884 A CNA2009100098884 A CN A2009100098884A CN 200910009888 A CN200910009888 A CN 200910009888A CN 101494223 A CN101494223 A CN 101494223A
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- semiconductor
- laser
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 276
- 238000000034 method Methods 0.000 title claims description 77
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000002019 doping agent Substances 0.000 claims description 73
- 150000002500 ions Chemical class 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 32
- -1 helium ion Chemical class 0.000 claims description 22
- 230000035515 penetration Effects 0.000 claims description 22
- 125000004429 atom Chemical group 0.000 claims description 16
- 229910052734 helium Inorganic materials 0.000 claims description 11
- 239000001307 helium Substances 0.000 claims description 11
- 238000000227 grinding Methods 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910001416 lithium ion Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010979 ruby Substances 0.000 claims description 3
- 229910001750 ruby Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000009331 sowing Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 78
- 230000004888 barrier function Effects 0.000 description 59
- 239000011248 coating agent Substances 0.000 description 35
- 238000000576 coating method Methods 0.000 description 35
- 238000012797 qualification Methods 0.000 description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 22
- 229910052698 phosphorus Inorganic materials 0.000 description 22
- 239000011574 phosphorus Substances 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 17
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 238000005259 measurement Methods 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 239000004411 aluminium Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 238000011084 recovery Methods 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 8
- 230000007935 neutral effect Effects 0.000 description 8
- 230000002950 deficient Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000005286 illumination Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000005224 laser annealing Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000007480 spreading Effects 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005588 protonation Effects 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210567582.2A CN102983159B (zh) | 2008-01-23 | 2009-01-22 | 半导体器件及其制造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008013018A JP5365009B2 (ja) | 2008-01-23 | 2008-01-23 | 半導体装置およびその製造方法 |
JP2008-013018 | 2008-01-23 | ||
JP2008013018 | 2008-01-23 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210567582.2A Division CN102983159B (zh) | 2008-01-23 | 2009-01-22 | 半导体器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101494223A true CN101494223A (zh) | 2009-07-29 |
CN101494223B CN101494223B (zh) | 2013-02-06 |
Family
ID=40875763
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210567582.2A Active CN102983159B (zh) | 2008-01-23 | 2009-01-22 | 半导体器件及其制造方法 |
CN2009100098884A Active CN101494223B (zh) | 2008-01-23 | 2009-01-22 | 半导体器件及其制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210567582.2A Active CN102983159B (zh) | 2008-01-23 | 2009-01-22 | 半导体器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8084814B2 (zh) |
JP (1) | JP5365009B2 (zh) |
CN (2) | CN102983159B (zh) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103199107A (zh) * | 2012-01-06 | 2013-07-10 | 上海华虹Nec电子有限公司 | 半导体器件及制造方法 |
CN103597602A (zh) * | 2011-04-06 | 2014-02-19 | Abb技术有限公司 | 双极穿通半导体器件和制造这种半导体器件的方法 |
CN103794645A (zh) * | 2012-10-30 | 2014-05-14 | 上海联星电子有限公司 | Igbt器件及其制作方法 |
CN103839990A (zh) * | 2012-11-23 | 2014-06-04 | 中国科学院微电子研究所 | 一种igbt的缓冲层结构及其制作方法 |
CN103946983A (zh) * | 2011-12-15 | 2014-07-23 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
CN104054178A (zh) * | 2012-03-30 | 2014-09-17 | 富士电机株式会社 | 半导体装置的制造方法 |
CN104106139A (zh) * | 2012-06-01 | 2014-10-15 | 富士电机株式会社 | 半导体装置 |
CN104145326A (zh) * | 2012-03-30 | 2014-11-12 | 富士电机株式会社 | 半导体装置的制造方法 |
CN104392912A (zh) * | 2014-11-05 | 2015-03-04 | 中国东方电气集团有限公司 | 一种在半导体器件中形成n型埋层的方法 |
CN104465791A (zh) * | 2013-09-22 | 2015-03-25 | 深圳市力振半导体有限公司 | 一种快恢复二极管的结构和背面的制备方法 |
CN105206515A (zh) * | 2014-06-24 | 2015-12-30 | 英飞凌科技股份有限公司 | 用于处理半导体晶片的方法 |
CN105206656A (zh) * | 2015-08-25 | 2015-12-30 | 电子科技大学 | 一种逆导型igbt器件 |
CN105280485A (zh) * | 2014-06-06 | 2016-01-27 | 英飞凌科技股份有限公司 | 制造包括场停止区的半导体器件的方法 |
CN105474399A (zh) * | 2014-03-19 | 2016-04-06 | 三垦电气株式会社 | 半导体装置 |
CN105552115A (zh) * | 2009-11-02 | 2016-05-04 | 富士电机株式会社 | 半导体器件以及用于制造半导体器件的方法 |
CN106062961A (zh) * | 2014-09-17 | 2016-10-26 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
CN106128946A (zh) * | 2011-05-18 | 2016-11-16 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
CN106463528A (zh) * | 2014-11-17 | 2017-02-22 | 富士电机株式会社 | 碳化硅半导体装置的制造方法 |
CN107004716A (zh) * | 2015-06-17 | 2017-08-01 | 富士电机株式会社 | 半导体装置 |
CN108321191A (zh) * | 2017-12-27 | 2018-07-24 | 杭州士兰集成电路有限公司 | 功率半导体器件及其制造方法 |
CN109075191A (zh) * | 2016-10-17 | 2018-12-21 | 富士电机株式会社 | 半导体装置 |
CN109860283A (zh) * | 2019-01-16 | 2019-06-07 | 全球能源互联网研究院有限公司 | 一种igbt、igbt背面的制作方法和装置 |
CN109904225A (zh) * | 2019-03-29 | 2019-06-18 | 电子科技大学 | 一种高可靠性igbt及其制造方法 |
CN110718583A (zh) * | 2012-04-24 | 2020-01-21 | 快捷韩国半导体有限公司 | 功率器件及其制造方法 |
CN111725312A (zh) * | 2020-06-05 | 2020-09-29 | 安徽瑞迪微电子有限公司 | 一种高性能半导体功率器件及其制造方法 |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011066171A (ja) * | 2009-09-17 | 2011-03-31 | Hitachi Ltd | 半導体装置 |
US8748236B2 (en) * | 2010-11-10 | 2014-06-10 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing semiconductor device |
JP2013074181A (ja) * | 2011-09-28 | 2013-04-22 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP5817686B2 (ja) | 2011-11-30 | 2015-11-18 | 株式会社デンソー | 半導体装置 |
EP2800143B1 (en) | 2011-12-28 | 2020-04-08 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing semiconductor device |
EP2806461B1 (en) | 2012-01-19 | 2021-11-24 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing same |
JP6078961B2 (ja) * | 2012-03-19 | 2017-02-15 | 富士電機株式会社 | 半導体装置の製造方法 |
KR102070959B1 (ko) * | 2012-04-24 | 2020-01-30 | 온세미컨덕터코리아 주식회사 | 파워 소자 및 그 제조방법 |
JP2013235891A (ja) * | 2012-05-07 | 2013-11-21 | Denso Corp | 半導体装置 |
US9490128B2 (en) | 2012-08-27 | 2016-11-08 | Ultratech, Inc. | Non-melt thin-wafer laser thermal annealing methods |
JP2014103376A (ja) * | 2012-09-24 | 2014-06-05 | Toshiba Corp | 半導体装置 |
JP6090329B2 (ja) * | 2012-10-23 | 2017-03-08 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP6265594B2 (ja) | 2012-12-21 | 2018-01-24 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法、及び半導体装置 |
JP2014138173A (ja) * | 2013-01-18 | 2014-07-28 | Shi Exaination & Inspection Ltd | 半導体装置の製造方法、及び基板処理システム |
CN103943497B (zh) * | 2013-01-22 | 2016-09-21 | 北大方正集团有限公司 | 一种背面形成方法 |
JP6227255B2 (ja) * | 2013-01-30 | 2017-11-08 | 株式会社 日立パワーデバイス | ダイオード及びその製造方法 |
KR101742416B1 (ko) * | 2013-06-12 | 2017-05-31 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치 |
KR102206507B1 (ko) | 2013-06-26 | 2021-01-22 | 후지 덴키 가부시키가이샤 | 반도체 장치 및 반도체 장치의 제조 방법 |
TWI521570B (zh) * | 2013-09-27 | 2016-02-11 | 財團法人工業技術研究院 | 半導體結構及其製造方法 |
JP6225649B2 (ja) | 2013-11-12 | 2017-11-08 | 株式会社デンソー | 絶縁ゲートバイポーラトランジスタおよびその製造方法 |
CN105830220B (zh) | 2013-12-13 | 2019-05-28 | 三菱电机株式会社 | 半导体装置的制造方法 |
CN105531825B (zh) * | 2013-12-16 | 2019-01-01 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP6098540B2 (ja) * | 2014-02-10 | 2017-03-22 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
WO2015190579A1 (ja) * | 2014-06-12 | 2015-12-17 | 富士電機株式会社 | 半導体装置 |
JP6237921B2 (ja) * | 2014-09-30 | 2017-11-29 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
WO2016051973A1 (ja) * | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10083843B2 (en) | 2014-12-17 | 2018-09-25 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
CN107210321B (zh) * | 2015-01-27 | 2020-09-29 | 三菱电机株式会社 | 半导体装置 |
CN107431087B (zh) * | 2015-03-13 | 2020-12-11 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN107004723B (zh) * | 2015-06-17 | 2021-03-09 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
US10026831B2 (en) * | 2015-08-18 | 2018-07-17 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
CN105206516B (zh) * | 2015-08-21 | 2018-01-12 | 中国东方电气集团有限公司 | 一种在半导体器件中形成场截止层的方法 |
JP2017055046A (ja) * | 2015-09-11 | 2017-03-16 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
US9768285B1 (en) | 2016-03-16 | 2017-09-19 | Semiconductor Components Industries, Llc | Semiconductor device and method of manufacture |
EP3451365B1 (en) | 2016-04-27 | 2023-08-16 | Sumitomo Heavy Industries, Ltd. | Laser annealing method |
JP6846119B2 (ja) * | 2016-05-02 | 2021-03-24 | 株式会社 日立パワーデバイス | ダイオード、およびそれを用いた電力変換装置 |
US20180145130A1 (en) * | 2016-05-17 | 2018-05-24 | Littelfuse, Inc. | Igbt with improved reverse blocking capability |
CN107452619B (zh) * | 2016-05-31 | 2020-10-16 | 上海微电子装备(集团)股份有限公司 | 一种igbt硅片背面退火方法及激光退火系统 |
JP6820738B2 (ja) * | 2016-12-27 | 2021-01-27 | 三菱電機株式会社 | 半導体装置、電力変換装置および半導体装置の製造方法 |
CN109643646B (zh) | 2017-03-29 | 2023-05-05 | 富士电机株式会社 | 半导体装置的制造方法 |
US10833021B2 (en) | 2017-06-29 | 2020-11-10 | Alpha And Omega Semiconductor (Cayman) Ltd. | Method for precisely aligning backside pattern to frontside pattern of a semiconductor wafer |
US10170559B1 (en) * | 2017-06-29 | 2019-01-01 | Alpha And Omega Semiconductor (Cayman) Ltd. | Reverse conducting IGBT incorporating epitaxial layer field stop zone and fabrication method |
US20190006461A1 (en) | 2017-06-29 | 2019-01-03 | Alpha And Omega Semiconductor (Cayman) Ltd. | Semiconductor device incorporating epitaxial layer field stop zone |
JP6964566B2 (ja) * | 2018-08-17 | 2021-11-10 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
CN109712886A (zh) * | 2018-12-17 | 2019-05-03 | 成都森未科技有限公司 | 一种功率半导体器件的背面加工工艺 |
CN109712885A (zh) * | 2018-12-17 | 2019-05-03 | 成都森未科技有限公司 | 一种半导体器件缓冲层制造方法 |
JP6702467B2 (ja) * | 2019-02-25 | 2020-06-03 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
WO2020229402A1 (en) * | 2019-05-10 | 2020-11-19 | Abb Power Grids Switzerland Ag | A dual base thin wafer power semiconductor device and method for manufacturing the same |
JP7375340B2 (ja) * | 2019-06-12 | 2023-11-08 | サンケン電気株式会社 | 半導体装置 |
JP2022073497A (ja) * | 2020-11-02 | 2022-05-17 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7415913B2 (ja) | 2020-12-28 | 2024-01-17 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
CN113224164B (zh) * | 2021-04-21 | 2022-03-29 | 电子科技大学 | 一种超结mos器件 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3413021B2 (ja) | 1996-07-30 | 2003-06-03 | 株式会社東芝 | 半導体装置 |
KR100613703B1 (ko) * | 1998-07-17 | 2006-08-21 | 인피니언 테크놀로지스 아게 | 높은 저지 전압용 전력 반도체 소자 |
JP2001077357A (ja) * | 1999-08-31 | 2001-03-23 | Toshiba Corp | 半導体装置 |
JP3695249B2 (ja) | 1999-09-30 | 2005-09-14 | 株式会社日立製作所 | 半導体装置及びそれを用いた電力変換装置 |
JP3684962B2 (ja) | 1999-12-01 | 2005-08-17 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
DE10055446B4 (de) * | 1999-11-26 | 2012-08-23 | Fuji Electric Co., Ltd. | Halbleiterbauelement und Verfahren zu seiner Herstellung |
US6482681B1 (en) | 2000-05-05 | 2002-11-19 | International Rectifier Corporation | Hydrogen implant for buffer zone of punch-through non epi IGBT |
JP3906076B2 (ja) | 2001-01-31 | 2007-04-18 | 株式会社東芝 | 半導体装置 |
JP3885598B2 (ja) | 2001-02-09 | 2007-02-21 | 富士電機デバイステクノロジー株式会社 | 半導体装置の製造方法 |
DE10205323B4 (de) * | 2001-02-09 | 2011-03-24 | Fuji Electric Systems Co., Ltd. | Verfahren zur Herstellung eines Halbleiterbauelements |
JP4967205B2 (ja) | 2001-08-09 | 2012-07-04 | 富士電機株式会社 | 半導体装置の製造方法 |
US6750423B2 (en) * | 2001-10-25 | 2004-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device |
JP4093042B2 (ja) * | 2002-12-09 | 2008-05-28 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP2004247593A (ja) * | 2003-02-14 | 2004-09-02 | Toshiba Corp | 半導体装置及びその製造方法 |
DE102004047749B4 (de) * | 2004-09-30 | 2008-12-04 | Infineon Technologies Austria Ag | Halbleiterbauteil Diode und IGBT sowie dafür geeignetes Herstellungsverfahren |
DE102005026408B3 (de) * | 2005-06-08 | 2007-02-01 | Infineon Technologies Ag | Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone |
JP2006351659A (ja) * | 2005-06-14 | 2006-12-28 | Toyota Motor Corp | 半導体装置の製造方法 |
DE112006002027B4 (de) * | 2005-08-03 | 2018-08-02 | Y.A.C. Holdings Co., Ltd. | Verfahren zum Herstellen von Halbleitervorrichtungen und System zum Herstellen von Halbleitervorrichtungen |
JP2007059431A (ja) | 2005-08-22 | 2007-03-08 | Mitsubishi Electric Corp | 半導体装置の製造方法及びレーザ加工装置 |
DE102005049506B4 (de) * | 2005-10-13 | 2011-06-09 | Infineon Technologies Austria Ag | Vertikales Halbleiterbauelement |
JP2007123300A (ja) | 2005-10-25 | 2007-05-17 | Toyota Motor Corp | 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法 |
WO2007049525A1 (en) * | 2005-10-26 | 2007-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and manufacturing method of semiconductor device |
JP5272299B2 (ja) * | 2005-11-10 | 2013-08-28 | 富士電機株式会社 | 半導体装置およびその製造方法 |
WO2007055352A1 (ja) | 2005-11-14 | 2007-05-18 | Fuji Electric Device Technology Co., Ltd. | 半導体装置およびその製造方法 |
EP2045844A1 (en) | 2007-10-03 | 2009-04-08 | ABB Technology AG | Semiconductor Module |
-
2008
- 2008-01-23 JP JP2008013018A patent/JP5365009B2/ja active Active
-
2009
- 2009-01-22 CN CN201210567582.2A patent/CN102983159B/zh active Active
- 2009-01-22 CN CN2009100098884A patent/CN101494223B/zh active Active
- 2009-01-22 US US12/358,241 patent/US8084814B2/en active Active
-
2011
- 2011-11-18 US US13/299,870 patent/US10068998B2/en active Active
Cited By (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10868111B2 (en) | 2009-11-02 | 2020-12-15 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US20180350902A1 (en) | 2009-11-02 | 2018-12-06 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US10043865B2 (en) | 2009-11-02 | 2018-08-07 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
CN105552115B (zh) * | 2009-11-02 | 2019-10-29 | 富士电机株式会社 | 半导体器件以及用于制造半导体器件的方法 |
CN105552115A (zh) * | 2009-11-02 | 2016-05-04 | 富士电机株式会社 | 半导体器件以及用于制造半导体器件的方法 |
US10847608B2 (en) | 2009-11-02 | 2020-11-24 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US10998398B2 (en) | 2009-11-02 | 2021-05-04 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
CN103597602A (zh) * | 2011-04-06 | 2014-02-19 | Abb技术有限公司 | 双极穿通半导体器件和制造这种半导体器件的方法 |
CN103597602B (zh) * | 2011-04-06 | 2016-05-18 | Abb技术有限公司 | 双极穿通半导体器件和制造这种半导体器件的方法 |
CN106128946B (zh) * | 2011-05-18 | 2019-03-08 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
CN106128946A (zh) * | 2011-05-18 | 2016-11-16 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
US10199453B2 (en) | 2011-12-15 | 2019-02-05 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing semiconductor device |
CN103946983A (zh) * | 2011-12-15 | 2014-07-23 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
CN103946983B (zh) * | 2011-12-15 | 2017-05-31 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
US10056449B2 (en) | 2011-12-15 | 2018-08-21 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing semiconductor device |
US10651269B2 (en) | 2011-12-15 | 2020-05-12 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing semiconductor device |
CN107195677A (zh) * | 2011-12-15 | 2017-09-22 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
CN103199107A (zh) * | 2012-01-06 | 2013-07-10 | 上海华虹Nec电子有限公司 | 半导体器件及制造方法 |
US9466689B2 (en) | 2012-03-30 | 2016-10-11 | Fuji Electric Co., Ltd. | Method for manufacturing a semiconductor device and semiconductor device manufactured thereby |
CN104145326A (zh) * | 2012-03-30 | 2014-11-12 | 富士电机株式会社 | 半导体装置的制造方法 |
CN104054178B (zh) * | 2012-03-30 | 2017-09-08 | 富士电机株式会社 | 半导体装置的制造方法 |
CN104054178A (zh) * | 2012-03-30 | 2014-09-17 | 富士电机株式会社 | 半导体装置的制造方法 |
CN110718583A (zh) * | 2012-04-24 | 2020-01-21 | 快捷韩国半导体有限公司 | 功率器件及其制造方法 |
CN104106139A (zh) * | 2012-06-01 | 2014-10-15 | 富士电机株式会社 | 半导体装置 |
CN103794645B (zh) * | 2012-10-30 | 2019-02-15 | 上海联星电子有限公司 | Igbt器件及其制作方法 |
CN103794645A (zh) * | 2012-10-30 | 2014-05-14 | 上海联星电子有限公司 | Igbt器件及其制作方法 |
CN103839990B (zh) * | 2012-11-23 | 2018-06-19 | 中国科学院微电子研究所 | 一种igbt的缓冲层结构及其制作方法 |
CN103839990A (zh) * | 2012-11-23 | 2014-06-04 | 中国科学院微电子研究所 | 一种igbt的缓冲层结构及其制作方法 |
CN104465791A (zh) * | 2013-09-22 | 2015-03-25 | 深圳市力振半导体有限公司 | 一种快恢复二极管的结构和背面的制备方法 |
CN104465791B (zh) * | 2013-09-22 | 2018-10-26 | 南京励盛半导体科技有限公司 | 一种快恢复二极管的结构和背面的制备方法 |
CN105474399A (zh) * | 2014-03-19 | 2016-04-06 | 三垦电气株式会社 | 半导体装置 |
CN105474399B (zh) * | 2014-03-19 | 2018-06-12 | 三垦电气株式会社 | 半导体装置 |
CN105280485B (zh) * | 2014-06-06 | 2018-06-12 | 英飞凌科技股份有限公司 | 制造包括场停止区的半导体器件的方法 |
US9887125B2 (en) | 2014-06-06 | 2018-02-06 | Infineon Technologies Ag | Method of manufacturing a semiconductor device comprising field stop zone |
CN105280485A (zh) * | 2014-06-06 | 2016-01-27 | 英飞凌科技股份有限公司 | 制造包括场停止区的半导体器件的方法 |
CN105206515A (zh) * | 2014-06-24 | 2015-12-30 | 英飞凌科技股份有限公司 | 用于处理半导体晶片的方法 |
CN105206515B (zh) * | 2014-06-24 | 2019-02-01 | 英飞凌科技股份有限公司 | 用于处理半导体晶片的方法 |
US9754787B2 (en) | 2014-06-24 | 2017-09-05 | Infineon Technologies Ag | Method for treating a semiconductor wafer |
CN106062961A (zh) * | 2014-09-17 | 2016-10-26 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
CN106062961B (zh) * | 2014-09-17 | 2020-02-11 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
CN104392912B (zh) * | 2014-11-05 | 2017-11-10 | 中国东方电气集团有限公司 | 一种在半导体器件中形成n型埋层的方法 |
CN104392912A (zh) * | 2014-11-05 | 2015-03-04 | 中国东方电气集团有限公司 | 一种在半导体器件中形成n型埋层的方法 |
CN106463528A (zh) * | 2014-11-17 | 2017-02-22 | 富士电机株式会社 | 碳化硅半导体装置的制造方法 |
CN107004716A (zh) * | 2015-06-17 | 2017-08-01 | 富士电机株式会社 | 半导体装置 |
CN107004716B (zh) * | 2015-06-17 | 2020-12-18 | 富士电机株式会社 | 半导体装置 |
CN105206656A (zh) * | 2015-08-25 | 2015-12-30 | 电子科技大学 | 一种逆导型igbt器件 |
CN109075191B (zh) * | 2016-10-17 | 2021-08-31 | 富士电机株式会社 | 半导体装置 |
US11049941B2 (en) | 2016-10-17 | 2021-06-29 | Fuji Electric Co., Ltd. | Semiconductor device |
CN109075191A (zh) * | 2016-10-17 | 2018-12-21 | 富士电机株式会社 | 半导体装置 |
CN108321191A (zh) * | 2017-12-27 | 2018-07-24 | 杭州士兰集成电路有限公司 | 功率半导体器件及其制造方法 |
CN108321191B (zh) * | 2017-12-27 | 2024-07-19 | 杭州士兰集昕微电子有限公司 | 功率半导体器件及其制造方法 |
CN109860283A (zh) * | 2019-01-16 | 2019-06-07 | 全球能源互联网研究院有限公司 | 一种igbt、igbt背面的制作方法和装置 |
CN109904225A (zh) * | 2019-03-29 | 2019-06-18 | 电子科技大学 | 一种高可靠性igbt及其制造方法 |
CN111725312A (zh) * | 2020-06-05 | 2020-09-29 | 安徽瑞迪微电子有限公司 | 一种高性能半导体功率器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090184340A1 (en) | 2009-07-23 |
CN101494223B (zh) | 2013-02-06 |
CN102983159B (zh) | 2016-01-13 |
CN102983159A (zh) | 2013-03-20 |
JP2009176892A (ja) | 2009-08-06 |
US10068998B2 (en) | 2018-09-04 |
US8084814B2 (en) | 2011-12-27 |
US20120064706A1 (en) | 2012-03-15 |
JP5365009B2 (ja) | 2013-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101494223B (zh) | 半导体器件及其制造方法 | |
US11469297B2 (en) | Semiconductor device and method for producing semiconductor device | |
CN101256948B (zh) | 半导体元件的制造方法 | |
US7728409B2 (en) | Semiconductor device and method of manufacturing the same | |
CN103534811B (zh) | 半导体装置及半导体装置的制造方法 | |
CN105552115B (zh) | 半导体器件以及用于制造半导体器件的方法 | |
JP5374883B2 (ja) | 半導体装置およびその製造方法 | |
JP6519649B2 (ja) | 半導体装置及びその製造方法 | |
JP5272299B2 (ja) | 半導体装置およびその製造方法 | |
TW201432916A (zh) | 半導體裝置及其製造方法 | |
CN103999225A (zh) | 半导体装置及其制造方法 | |
CN102054876A (zh) | 快速恢复二极管 | |
US9704980B2 (en) | Insulated gate bipolar transistor and method for manufacturing same | |
CN104157569A (zh) | 快恢复二极管制造工艺方法 | |
EP2706576A2 (en) | Diode and power conversion system | |
JP6294175B2 (ja) | 半導体装置およびそれを用いた電力変換システム | |
CN102315107A (zh) | 制造半导体器件的方法 | |
JP2019071503A (ja) | 半導体装置及びその製造方法 | |
JP5201303B2 (ja) | 逆阻止型半導体装置の製造方法 | |
KR100616115B1 (ko) | 양성자 조사방식에 따른 고전압/대전류 반도체 -고속스위치 소자들의 제조용 소수 캐리어 수명 제어방법 | |
CN104716174B (zh) | 半导体器件以及用于制造半导体器件的方法 | |
JPH07297415A (ja) | 半導体装置とその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: FUJI MOTOR SYSTEM CO., LTD. Free format text: FORMER OWNER: FUJI MOTOR ELECTRONICS TECHNOLOGY CO., LTD. Effective date: 20100521 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20100521 Address after: Tokyo, Japan Applicant after: Fuji Electric Systems Co., Ltd. Address before: Tokyo, Japan Applicant before: Fuji Electronic Device Technol |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJI ELECTRIC CO., LTD. Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD. Effective date: 20110921 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20110921 Address after: Kanagawa Applicant after: Fuji Electric Co., Ltd. Address before: Tokyo, Japan Applicant before: Fuji Electric Systems Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |