JP6265594B2 - 半導体装置の製造方法、及び半導体装置 - Google Patents
半導体装置の製造方法、及び半導体装置 Download PDFInfo
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- JP6265594B2 JP6265594B2 JP2012280071A JP2012280071A JP6265594B2 JP 6265594 B2 JP6265594 B2 JP 6265594B2 JP 2012280071 A JP2012280071 A JP 2012280071A JP 2012280071 A JP2012280071 A JP 2012280071A JP 6265594 B2 JP6265594 B2 JP 6265594B2
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Description
つまり、リン酸が機械的な研削等で生じた凹凸の凹部に溜り凹部のエッチングレート(エッチング速度)を低下させ、凸部のエッチングレートとの間に差を生じさせることで平坦な鏡面仕上げとすることができる。
そして、鏡面仕上げされたシリコン基板の裏面は、蒸着やスパッタにより裏面金属電極を形成する上で理想的な状態となっている。
従って、従来技術においては、裏面研削、ウエットエッチング及びレーザアニールの一連の工程が、半導体基板の薄化処理において、基本的な工程となっている。
このリンは通常のDI(純水)洗浄では除去しきれず、当該リンが残留したまま次工程でレーザアニールによる不純物の活性化が行われるとそのリンがN型不純物として活性化されてしまう。そのため、P型コレクタの濃度プロファイルが設計値とずれ、半導体装置の特性を劣化させる要因となる。
同図に示す例では、ウエットエッチングしたシリコン基板の裏面から約0.4μmの深さにかけて、約2×1017atoms/cm3の濃度の意図しないリンが検出されている。
このようにシリコン基板内に拡散したリンは、N型不純物として作用するので、例えばIGBTのP型コレクタにおけるP型不純物に対するカウンタードープとして機能し、IGBTのP型コレクタの濃度の変動を促し、精緻な不純物濃度の設計の障害となり、ひいてはEoff低減の妨げとなっていた。
従って、ウエットエッチング時に付着したリンをいかに確実に除去するかが、IGBTのさらなる特性向上の上での課題となっている。
図4において、まず、工程400でシリコン基板の表面に上記能動領域を形成する。
次に、工程402でシリコン基板の裏面を機械的に研削する。この研削は、例えば、インフィード式のグラインダ装置を用いて行うことができる。
次に、工程404で、研削後のシリコン基板の裏面をウエットエッチングする。このときのエッチング薬液は、例えば、弗酸、硝酸、及びリン酸を含む混合薬液を用いることができる。この混合薬液における各酸の役割は上述したとおりである。
次に、工程408でシリコン基板の裏面に対しSC−1洗浄を行う。このときの基板の断面を図5(a)に示す。
ここで、SC−1洗浄とは、アンモニア水及び過酸化水素水を含む洗浄液による洗浄であり、まず、シリコン基板の表面を過酸化水素水により酸化し、次にそのシリコン酸化物をアルカリであるアンモニアによりエッチングし、リフトオフによってシリコン酸化物に付着した各種パーテイクルを除去する洗浄方法である。
次に、工程412でシリコン基板の裏面からボロン(11B+)を数十keVの加速エネルギーでイオン注入し、P型コレクタ層30を形成する(図5(c))。
次に、工程416で、シリコン基板の裏面に裏面金属電極32を形成して、本実施の形態に係る半導体装置(IGBT)10が完成する(図5(d))。
その後はダイシング等行って、適宜個別の半導体装置10のチップに個片化する。
シリコン基板を用いて次の4つの試料を作成し、レーザアニールを施した後SIMS分析してリン濃度を評価した。評価に用いたシリコン基板の裏面研削後の厚さは約100μmである。
<試料1>:裏面研削後のシリコン基板に従来のウエットエッチング処理を行った(すなわち、図4の製造工程の工程404を行った)。シリコンエッチング薬液としては、弗酸:硝酸:硫酸:リン酸:水=10%:30%:20%:20%:20%(体積比)の混合薬液であり、そのエッチングレートは、約20μm/分である。また、エッチング時間を1分とし、シリコン基板を約80μmまで研削した。ウエットエッチング後の純水リンス洗浄時間は約60秒とした。
<試料2>:上記従来のウエットエッチング処理を施した後のシリコン基板を120秒間純水リンス洗浄した(つまり従来の2倍の時間だけ純水リンス洗浄を行った)。
<試料3>:上記従来のウエットエッチング処理後のシリコン基板に弗酸(0.3%)による洗浄を施した。この弗酸による酸化膜エッチングのエッチングレートは約0.002μm/分であり、エッチング時間は1分とした。
<試料4>:上記従来のウエットエッチング後のシリコン基板に、弗酸(0.3%)による洗浄及びSC−1洗浄を施した。SC−1洗浄の薬液の混合比は、アンモニア(NH4OH):過酸化水素水(H2O2):水(H2O)=1:1:10(体積比)とし、そのシリコンのエッチングレートは約0.5nm/分であり、エッチング時間は1分とした。なお、弗酸(0.3%)による酸化膜エッチングのエッチングレート、及びエッチング時間は試料3と同様とした。
また、図6(b)に示すウエットエッチング後の純水リンス洗浄時間を2倍にした試料2では、試料1よりわずかなリン濃度の低下がみられるものの、大きな差はない。従って、純水リンス洗浄のみではリンをほとんど除去することができないと考えられる。
次に、図6(d)に示す弗酸による洗浄およびSC−1洗浄をともに施した試料4では、リン濃度の測定値が、SIMSのリン検出限界である1014atoms/cm3台となっており、リンがほぼ完全に除去されていることがわかる。
次に、実際のIGBTのサンプルを作成して、その不純物濃度を評価した。
まず、シリコン基板の表面に基板の厚さ方向に流れる電流を制御する能動領域を形成した後裏面研削を行い、上記試料4相当の処理、すなわち通常のウエットエッチング処理後に弗酸による洗浄処理およびSC−1洗浄処理を施した。シリコン基板の厚さ、エッチング薬液、エッチングレート、エッチング時間等の条件は、試料4と同様とした。
続けて、シリコン基板の裏面からさらにボロン(11B+)を30keVの加速エネルギーでイオン注入し、P型コレクタ層30を形成した(図4の工程412)。P型コレクタ層30の厚さは、約0.2μmとした。
その後、注入したボロンに対しレーザアニール処理を施した(図4の工程414)。
図7から明らかなように、本サンプルのリンの濃度(同図中‘P’で示されるグラフ)は、深さ約0.7μmの位置にピーク値約1×1017atoms/cm3を有するほぼ目標どおりの正規分布に近い分布を示しており、弗酸による洗浄及びSC−1洗浄によるリンの除去効果が確認できる。また、P型コレクタ層30の厚み(約0.4μm)の範囲でのリン濃度は、1×1016atoms/cm3〜2×1016atoms/cm3程度の値を示しており、バッファ層28内のピーク値1×1017atoms/cm3の1/5程度に抑えられていることがわかる。
12 表面金属電極
13 保護膜
16 中間膜
18 N型エミッタ層
20 P型チャネル層
22 ゲート酸化膜
24 トレンチゲート
26 N型基板
28 バッファ層
30 P型コレクタ層
32 裏面金属電極
Claims (6)
- シリコンからなる基板の表面に前記基板の厚さ方向に流れる電流を制御する能動素子を含む第1の半導体領域を形成する工程と、
前記基板の裏面を研削する工程と、
研削後の前記基板の裏面をリンを含む薬液によりエッチングする第1のエッチング工程と、
第1のエッチング後の裏面を、リンを含まないエッチング液を使用しかつ前記第1のエッチングよりエッチングレートが低いエッチング方法でエッチングする第2のエッチング工程と、
前記第2のエッチング後の前記基板の裏面からP型の不純物を注入して前記電流が流れる第2の半導体領域を形成する工程と、
を含む半導体装置の製造方法。 - 前記第1のエッチング工程の薬液が、弗酸、硝酸、及びリン酸を含む混合液である請求項1に記載の半導体装置の製造方法。
- 前記第2のエッチング工程が、弗酸による洗浄及びSC−1洗浄の少なくとも一方である請求項1又は請求項2に記載の半導体装置の製造方法。
- 前記基板の裏面から注入した不純物を活性化する工程をさらに含む請求項1ないし請求項3のいずれか1項に記載の半導体装置の製造方法。
- 前記活性化がレーザアニールによる活性化である請求項4に記載の半導体装置の製造方法。
- 前記第2の半導体領域上に裏面電極を形成する工程をさらに含む請求項1ないし請求項5のいずれか1項に記載の半導体装置の製造方法。
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