JP6237921B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6237921B2 JP6237921B2 JP2016551618A JP2016551618A JP6237921B2 JP 6237921 B2 JP6237921 B2 JP 6237921B2 JP 2016551618 A JP2016551618 A JP 2016551618A JP 2016551618 A JP2016551618 A JP 2016551618A JP 6237921 B2 JP6237921 B2 JP 6237921B2
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Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2006−080110号公報
[特許文献2] 国際公開2013/100155号公報
Claims (16)
- 裏面側において、プロトンを含むn型不純物領域を有する半導体基板と、
前記半導体基板の表面側においてプロトンに対する遮蔽効果を有するバリアメタルとを備え、
前記n型不純物領域は、
予め定められたピークを有するキャリア濃度の第1不純物領域と、
前記予め定められたキャリア濃度のピークよりも低いキャリア濃度のピークを備え、前記第1不純物領域よりも前記裏面側に設けられた第2不純物領域と、
前記予め定められたキャリア濃度のピークよりも高いキャリア濃度のピークを備え、最も前記裏面側に設けられた第3不純物領域と
を有する、半導体装置。 - 前記n型不純物領域は、前記裏面側と前記表面側との間の異なる深さ位置において、キャリア濃度の複数のピークを有する、請求項1に記載の半導体装置。
- 前記半導体基板の前記表面側にゲート電極と、前記ゲート電極と前記半導体基板との間に設けられたゲート絶縁膜とをさらに備え、前記ゲート絶縁膜と前記半導体基板との界面には水素原子が存在する、請求項1または2に記載の半導体装置。
- 前記n型不純物領域は、
前記予め定められたキャリア濃度のピークよりも高く、且つ、前記第3不純物領域のキャリア濃度のピークよりも低いキャリア濃度のピークを備え、前記第2不純物領域と前記第3不純物領域との間に設けられた追加の不純物領域をさらに有する
請求項1から3のいずれか一項に記載の半導体装置。 - 前記バリアメタルは、第1金属の層と前記第1金属の窒化物層とを有する
請求項1から4のいずれか一項に記載の半導体装置。 - 前記半導体基板の表面側に設けられた層間絶縁膜をさらに備え、
前記バリアメタルは前記層間絶縁膜を覆う
請求項1から5のいずれか一項に記載の半導体装置。 - 前記半導体基板は、
前記半導体基板の表面側においてp型不純物領域と、
前記p型不純物領域と前記n型不純物領域との間に位置するn型不純物を有するベース領域と
をさらに備え、
前記p型不純物領域から前記第1不純物領域までのキャリア濃度の積分値が臨界積分濃度よりも小さい
請求項3に記載の半導体装置。 - 前記ゲート絶縁膜と前記p型不純物領域との界面にシリコン‐水素結合を有する
請求項7に記載の半導体装置。 - 前記p型不純物領域のチャネル形成領域から前記第1不純物領域までの長さは20μm以上70μm以下である
請求項7または8に記載の半導体装置。 - 前記半導体基板は、前記第1不純物領域から前記p型不純物領域のチャネル形成領域に渡って、1E+14cm −3 以上の水素濃度を有する
請求項7から9のいずれか一項に記載の半導体装置。 - 前記半導体基板のチャネル形成領域は、前記第1不純物領域に向って増加する水素濃度を有する
請求項7から9のいずれか一項に記載の半導体装置。 - 半導体基板の表面側においてプロトンに対する遮蔽効果を有するバリアメタルを形成する段階と、
前記半導体基板の裏面側からプロトンを注入して、不純物領域を形成する段階と、
プロトンを注入した前記半導体基板を熱処理する段階と、を備え、
前記不純物領域を形成する段階は、
予め定められたキャリア濃度の不純物領域を形成するべく、第1回目のプロトン注入をする段階と、
前記予め定められたキャリア濃度よりもキャリア濃度が低くなるよう注入条件を変えて、前記第1回目のプロトン注入よりも前記裏面側において不純物領域を形成するべく、第2回目のプロトン注入をする段階と、
前記第2回目のプロトン注入よりも前記裏面側において不純物領域を形成する第3回目のプロトン注入をする段階と、
前記第3回目のプロトン注入よりも前記裏面側において、前記予め定められたキャリア濃度よりも高くなるよう注入条件を変えて、不純物領域を形成する第4回目のプロトン注入をする段階と
を有する半導体装置の製造方法。 - 前記不純物領域を形成する段階は、加速電圧と単位面積あたりの注入量とを含む注入条件を変えて、複数回に渡って異なる深さ位置にプロトンを注入する段階を含む、請求項12に記載の半導体装置の製造方法。
- 第1回目、第2回目、第3回目および第4回目のプロトン注入における単位面積当たりの注入量を、それぞれN1、N2、N3およびN4とすると、N2<N1〜N3<N4の関係を満たす、請求項12または13に記載の半導体装置の製造方法。
- バリアメタルを形成する段階の後に、前記第1回目のプロトン注入をする段階を有する
請求項12から14のいずれか一項に記載の半導体装置の製造方法。 - 前記半導体基板の裏面側からプロトンを注入して、前記不純物領域を形成する段階の後に、プロトンを注入した前記半導体基板を熱処理する段階を有する
請求項12から15のいずれか一項に記載の半導体装置の製造方法。
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