JP6668847B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6668847B2 JP6668847B2 JP2016050798A JP2016050798A JP6668847B2 JP 6668847 B2 JP6668847 B2 JP 6668847B2 JP 2016050798 A JP2016050798 A JP 2016050798A JP 2016050798 A JP2016050798 A JP 2016050798A JP 6668847 B2 JP6668847 B2 JP 6668847B2
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 124
- 239000012535 impurity Substances 0.000 claims description 112
- 229910002601 GaN Inorganic materials 0.000 claims description 108
- 230000007547 defect Effects 0.000 claims description 52
- 238000000137 annealing Methods 0.000 claims description 43
- 238000002513 implantation Methods 0.000 claims description 37
- 238000009826 distribution Methods 0.000 claims description 19
- 239000011777 magnesium Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 230000001133 acceleration Effects 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 114
- 238000010586 diagram Methods 0.000 description 21
- 238000005468 ion implantation Methods 0.000 description 12
- 229910001425 magnesium ion Inorganic materials 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052696 pnictogen Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H01L21/26—Bombardment with radiation
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Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2009−170604号公報
[特許文献2] 特開2014−86698号公報
Claims (18)
- 窒化ガリウムを用いた半導体装置であって、
n型領域を含む窒化ガリウム層
を備え、
前記窒化ガリウム層は、
第1のp型ウェル領域と、
前記第1のp型ウェル領域の少なくとも一部よりも上に設けられ、前記第1のp型ウェル領域よりもp型不純物濃度が高いピーク領域を有する第2のp型ウェル領域と
を有し、
前記第1のp型ウェル領域の少なくとも一部は、前記窒化ガリウム層のおもて面に設けられる半導体装置。 - 前記第2のp型ウェル領域は、前記窒化ガリウム層のおもて面および前記第1のp型ウェル領域によって囲まれている
請求項1に記載の半導体装置。 - 前記n型領域の少なくとも一部は、前記窒化ガリウム層のおもて面に設けられる
請求項1または2に記載の半導体装置。 - 前記第2のp型ウェル領域における前記ピーク領域は、1E+19[cm−3]以上のp型不純物濃度を有する
請求項1または3に記載の半導体装置。 - 前記第2のp型ウェル領域における前記ピーク領域は、1E+21[cm−3]未満のp型不純物濃度を有する
請求項1から4のいずれか一項に記載の半導体装置。 - 前記第1のp型ウェル領域は、前記窒化ガリウム層の深さ方向においてp型不純物の濃度分布の傾きが前記ピーク領域よりもなだらかな平坦領域を有し、
前記平坦領域は、1E+19[cm−3]未満のp型不純物濃度を有する
請求項1から5のいずれか一項に記載の半導体装置。 - 前記第1のp型ウェル領域における前記平坦領域は、1E+16[cm−3]以上のp型不純物濃度を有する
請求項6に記載の半導体装置。 - 前記第1のp型ウェル領域における前記平坦領域のp型不純物濃度の最大値は、前記第2のp型ウェル領域における前記ピーク領域のp型不純物濃度の半分以下である
請求項6または7に記載の半導体装置。 - 前記第2のp型ウェル領域に印加するアノード電位を前記n型領域に印加するカソード電位よりも低くした場合に、前記第1のp型ウェル領域と前記n型領域との間に形成される空乏層が前記第2のp型ウェル領域に達しない
請求項1から8のいずれか一項に記載の半導体装置。 - 前記窒化ガリウム層においてアバランシェ降伏が発生するときの前記アノード電位と前記カソード電位との差である臨界電圧を印加した場合において、前記空乏層が前記第2のp型ウェル領域に達しない
請求項9に記載の半導体装置。 - 前記第2のp型ウェル領域における格子欠陥の数は、前記第1のp型ウェル領域における格子欠陥の数よりも多い
請求項1から10のいずれか一項に記載の半導体装置。 - 前記第1のp型ウェル領域および前記第2のp型ウェル領域のp型不純物は、マグネシウム、カルシウム、ベリリウムおよび亜鉛のうち1種類以上の元素を有する
請求項1から11のいずれか一項に記載の半導体装置。 - 前記窒化ガリウム層は、1E+7[cm−2]未満の転位密度を有する
請求項1から12のいずれか一項に記載の半導体装置。 - 前記窒化ガリウム層は、前記第2のp型ウェル領域にのみ設けられた欠陥領域を更に有する
請求項1から13のいずれか一項に記載の半導体装置。 - n型領域を含む窒化ガリウム層を用いた半導体装置の製造方法であって、
前記窒化ガリウム層に第1のp型ウェル領域を設けるべく、前記窒化ガリウム層のおもて面からp型不純物を注入する第1の注入段階と、
前記第1のp型ウェル領域の少なくとも一部よりも上に設けられ、前記第1のp型ウェル領域よりもp型不純物濃度が高いピーク領域を形成するべく、前記第1の注入段階よりも低い加速電圧で前記窒化ガリウム層のおもて面からp型不純物を注入する第2の注入段階と、
前記第1の注入段階および前記第2の注入段階の前または後であって、前記窒化ガリウム層をアニールする段階の前に、n型不純物およびp型不純物とは異なる元素を前記窒化ガリウム層のおもて面から前記ピーク領域にのみ注入する第3の注入段階と、
前記第1の注入段階および前記第2の注入段階の後に、前記窒化ガリウム層をアニールする段階と
を備える
半導体装置の製造方法。 - 前記第3の注入段階において、n型不純物およびp型不純物とは異なる前記元素は、前記第1の注入段階および前記第2の注入段階とは異なるプロファイルで注入される
請求項15に記載の半導体装置の製造方法。 - 前記第3の注入段階において注入される元素は、15族および18族の少なくとも一方の元素である
請求項15または16に記載の半導体装置の製造方法。 - n型領域を含む窒化ガリウム層を用いた半導体装置の製造方法であって、
前記窒化ガリウム層に第1のp型ウェル領域を設けるべく、前記窒化ガリウム層のおもて面からp型不純物を注入する第1の注入段階と、
前記第1のp型ウェル領域の少なくとも一部よりも上に設けられ、前記第1のp型ウェル領域よりもp型不純物濃度が高いピーク領域を形成し、前記第1のp型ウェル領域の少なくとも一部は、前記窒化ガリウム層のおもて面に設けるべく、前記第1の注入段階よりも低い加速電圧で前記窒化ガリウム層のおもて面からp型不純物を注入する第2の注入段階と、
前記第1の注入段階および前記第2の注入段階の後に、前記窒化ガリウム層をアニールする段階と
を備える
半導体装置の製造方法。
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