CN101261966A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN101261966A CN101261966A CNA2008100820537A CN200810082053A CN101261966A CN 101261966 A CN101261966 A CN 101261966A CN A2008100820537 A CNA2008100820537 A CN A2008100820537A CN 200810082053 A CN200810082053 A CN 200810082053A CN 101261966 A CN101261966 A CN 101261966A
- Authority
- CN
- China
- Prior art keywords
- terminal
- case
- semiconductor device
- peripheral resin
- shank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Inverter Devices (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007058030 | 2007-03-08 | ||
JP2007-058030 | 2007-03-08 | ||
JP2007058030 | 2007-03-08 | ||
JP2007150426 | 2007-06-06 | ||
JP2007150426A JP4985116B2 (ja) | 2007-03-08 | 2007-06-06 | 半導体装置およびその製造方法 |
JP2007-150426 | 2007-06-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101261966A true CN101261966A (zh) | 2008-09-10 |
CN101261966B CN101261966B (zh) | 2012-05-02 |
Family
ID=39962307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100820537A Active CN101261966B (zh) | 2007-03-08 | 2008-03-05 | 半导体装置及其制造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4985116B2 (zh) |
CN (1) | CN101261966B (zh) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103066045A (zh) * | 2012-12-30 | 2013-04-24 | 西安永电电气有限责任公司 | 智能功率模块 |
CN104838576A (zh) * | 2013-02-06 | 2015-08-12 | 富士电机株式会社 | 半导体装置 |
CN104979221A (zh) * | 2014-04-01 | 2015-10-14 | 富士电机株式会社 | 半导体装置的制造方法及半导体装置 |
CN105190876A (zh) * | 2013-06-10 | 2015-12-23 | 富士电机株式会社 | 半导体装置及其制造方法 |
CN105450040A (zh) * | 2014-08-28 | 2016-03-30 | 株洲南车时代电气股份有限公司 | 一种标准化功率模块单元 |
CN105940489A (zh) * | 2014-01-17 | 2016-09-14 | 富士电机株式会社 | 半导体模块 |
CN106057743A (zh) * | 2015-04-16 | 2016-10-26 | 三菱电机株式会社 | 功率半导体模块 |
CN106684043A (zh) * | 2016-12-13 | 2017-05-17 | 中航(重庆)微电子有限公司 | 一种防静电igbt模块 |
CN106952882A (zh) * | 2015-11-16 | 2017-07-14 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
CN107026129A (zh) * | 2015-12-25 | 2017-08-08 | 富士电机株式会社 | 半导体装置 |
CN107170718A (zh) * | 2016-03-08 | 2017-09-15 | Abb瑞士股份有限公司 | 半导体模块 |
CN108257940A (zh) * | 2016-12-28 | 2018-07-06 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN108336057A (zh) * | 2017-01-19 | 2018-07-27 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN109599372A (zh) * | 2017-10-03 | 2019-04-09 | 三菱电机株式会社 | 半导体装置 |
CN109659294A (zh) * | 2019-01-15 | 2019-04-19 | 海安市高童自动化科技有限公司 | 一种电力转换电路装置 |
CN112447699A (zh) * | 2019-09-05 | 2021-03-05 | 株式会社东芝 | 半导体装置 |
CN112514220A (zh) * | 2018-07-30 | 2021-03-16 | 三菱电机株式会社 | 功率转换装置 |
CN113437026A (zh) * | 2020-03-23 | 2021-09-24 | 株式会社东芝 | 半导体装置 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4894784B2 (ja) | 2008-02-27 | 2012-03-14 | 三菱電機株式会社 | 半導体装置とその製造方法 |
JP6065839B2 (ja) * | 2011-09-30 | 2017-01-25 | 富士電機株式会社 | 半導体装置及びその製造方法 |
CN104054173B (zh) * | 2012-01-25 | 2017-06-30 | 三菱电机株式会社 | 功率用半导体装置 |
JP5986488B2 (ja) * | 2012-11-21 | 2016-09-06 | 日本インター株式会社 | パワー半導体モジュールおよびその製造方法 |
JP6115172B2 (ja) * | 2013-02-15 | 2017-04-19 | 富士電機株式会社 | 半導体装置 |
JP6107362B2 (ja) * | 2013-04-18 | 2017-04-05 | 富士電機株式会社 | 半導体装置の製造方法及び半導体装置 |
JP6541593B2 (ja) * | 2015-05-15 | 2019-07-10 | 三菱電機株式会社 | 電力用半導体装置 |
JP6523976B2 (ja) * | 2016-01-15 | 2019-06-05 | 京セラ株式会社 | 半導体装置 |
JP6600263B2 (ja) * | 2016-02-24 | 2019-10-30 | 京セラ株式会社 | 半導体装置 |
JP6758114B2 (ja) * | 2016-07-22 | 2020-09-23 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
CN109997221B (zh) | 2016-11-29 | 2024-03-12 | 三菱电机株式会社 | 半导体装置、控制装置以及半导体装置的制造方法 |
JP7451905B2 (ja) | 2019-09-03 | 2024-03-19 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6866913B2 (ja) * | 2019-10-24 | 2021-04-28 | 三菱電機株式会社 | 半導体装置 |
EP4358658A1 (de) * | 2022-10-20 | 2024-04-24 | Siemens Aktiengesellschaft | Verfahren zur herstellung einer anordnung mit einem gehäuseteil zur aufnahme eines halbleiterelements und einer bodenplatte |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61276353A (ja) * | 1985-05-31 | 1986-12-06 | Toshiba Corp | 混成集積回路 |
JPH069520Y2 (ja) * | 1986-04-16 | 1994-03-09 | 三菱電機株式会社 | 半導体装置 |
JP2720009B2 (ja) * | 1993-11-29 | 1998-02-25 | 株式会社三社電機製作所 | 電力用半導体モジュール |
DE19719703C5 (de) * | 1997-05-09 | 2005-11-17 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Leistungshalbleitermodul mit Keramiksubstrat |
JP2001189416A (ja) * | 1999-12-28 | 2001-07-10 | Mitsubishi Electric Corp | パワーモジュール |
DE10232566B4 (de) * | 2001-07-23 | 2015-11-12 | Fuji Electric Co., Ltd. | Halbleiterbauteil |
JP4722415B2 (ja) * | 2004-06-14 | 2011-07-13 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP4424199B2 (ja) * | 2004-12-27 | 2010-03-03 | 日産自動車株式会社 | 半導体装置 |
JP4644008B2 (ja) * | 2005-03-09 | 2011-03-02 | 三菱電機株式会社 | 半導体モジュール |
-
2007
- 2007-06-06 JP JP2007150426A patent/JP4985116B2/ja active Active
-
2008
- 2008-03-05 CN CN2008100820537A patent/CN101261966B/zh active Active
Cited By (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103066045A (zh) * | 2012-12-30 | 2013-04-24 | 西安永电电气有限责任公司 | 智能功率模块 |
CN104838576A (zh) * | 2013-02-06 | 2015-08-12 | 富士电机株式会社 | 半导体装置 |
CN105190876B (zh) * | 2013-06-10 | 2018-04-13 | 富士电机株式会社 | 半导体装置及其制造方法 |
CN105190876A (zh) * | 2013-06-10 | 2015-12-23 | 富士电机株式会社 | 半导体装置及其制造方法 |
CN105940489B (zh) * | 2014-01-17 | 2019-04-05 | 富士电机株式会社 | 半导体模块 |
CN105940489A (zh) * | 2014-01-17 | 2016-09-14 | 富士电机株式会社 | 半导体模块 |
CN104979221A (zh) * | 2014-04-01 | 2015-10-14 | 富士电机株式会社 | 半导体装置的制造方法及半导体装置 |
CN104979221B (zh) * | 2014-04-01 | 2019-06-25 | 富士电机株式会社 | 半导体装置的制造方法及半导体装置 |
CN105450040B (zh) * | 2014-08-28 | 2018-11-06 | 株洲南车时代电气股份有限公司 | 一种标准化功率模块单元 |
CN105450040A (zh) * | 2014-08-28 | 2016-03-30 | 株洲南车时代电气股份有限公司 | 一种标准化功率模块单元 |
CN106057743A (zh) * | 2015-04-16 | 2016-10-26 | 三菱电机株式会社 | 功率半导体模块 |
CN106057743B (zh) * | 2015-04-16 | 2019-04-26 | 三菱电机株式会社 | 功率半导体模块 |
CN106952882A (zh) * | 2015-11-16 | 2017-07-14 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
CN106952882B (zh) * | 2015-11-16 | 2021-06-15 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
CN107026129A (zh) * | 2015-12-25 | 2017-08-08 | 富士电机株式会社 | 半导体装置 |
CN107026129B (zh) * | 2015-12-25 | 2021-11-26 | 富士电机株式会社 | 半导体装置 |
CN107170718A (zh) * | 2016-03-08 | 2017-09-15 | Abb瑞士股份有限公司 | 半导体模块 |
CN107170718B (zh) * | 2016-03-08 | 2021-12-31 | 日立能源瑞士股份公司 | 半导体模块 |
CN106684043A (zh) * | 2016-12-13 | 2017-05-17 | 中航(重庆)微电子有限公司 | 一种防静电igbt模块 |
CN106684043B (zh) * | 2016-12-13 | 2019-05-03 | 华润微电子(重庆)有限公司 | 一种防静电igbt模块 |
CN108257940B (zh) * | 2016-12-28 | 2021-07-06 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN108257940A (zh) * | 2016-12-28 | 2018-07-06 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN108336057A (zh) * | 2017-01-19 | 2018-07-27 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN108336057B (zh) * | 2017-01-19 | 2022-01-28 | 三菱电机株式会社 | 半导体装置及其制造方法 |
CN109599372A (zh) * | 2017-10-03 | 2019-04-09 | 三菱电机株式会社 | 半导体装置 |
CN109599372B (zh) * | 2017-10-03 | 2023-02-28 | 三菱电机株式会社 | 半导体装置 |
CN112514220A (zh) * | 2018-07-30 | 2021-03-16 | 三菱电机株式会社 | 功率转换装置 |
CN112514220B (zh) * | 2018-07-30 | 2024-04-05 | 三菱电机株式会社 | 功率转换装置 |
CN109659294A (zh) * | 2019-01-15 | 2019-04-19 | 海安市高童自动化科技有限公司 | 一种电力转换电路装置 |
CN109659294B (zh) * | 2019-01-15 | 2021-10-29 | 江苏双聚智能装备制造有限公司 | 一种电力转换电路装置 |
CN112447699A (zh) * | 2019-09-05 | 2021-03-05 | 株式会社东芝 | 半导体装置 |
CN113437026A (zh) * | 2020-03-23 | 2021-09-24 | 株式会社东芝 | 半导体装置 |
CN113437026B (zh) * | 2020-03-23 | 2024-04-26 | 株式会社东芝 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101261966B (zh) | 2012-05-02 |
JP4985116B2 (ja) | 2012-07-25 |
JP2008252055A (ja) | 2008-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101261966B (zh) | 半导体装置及其制造方法 | |
US7944042B2 (en) | Semiconductor device and method of manufacturing same | |
CN102047414B (zh) | 电力半导体电路装置及其制造方法 | |
US9734944B2 (en) | Electronic package structure comprising a magnetic body and an inductive element and method for making the same | |
CN100563405C (zh) | 立体电子电路装置及其中继基板和中继框 | |
US8314478B2 (en) | Semiconductor memory device and manufacturing the same | |
CN1767186B (zh) | 引线框架及其半导体封装 | |
CN101405752A (zh) | 存储卡 | |
CN103732028A (zh) | 供电模块 | |
CN103887273A (zh) | 半导体模块 | |
US9673117B2 (en) | Semiconductor module | |
CN105637746B (zh) | 模制定子、模制电动机和空调机 | |
CN106416010B (zh) | 电动机的定子、电动机以及空调机 | |
JP2013251429A (ja) | 半導体モジュール及び半導体モジュールの製造方法 | |
JP2014212218A (ja) | 半導体装置の製造方法及び半導体装置 | |
US11417577B2 (en) | Semiconductor package and method of manufacturing the same | |
CN102629510B (zh) | 模制线圈及使用模制线圈的电磁阀 | |
US20110074005A1 (en) | Semiconductor device, method for fabricating a semiconductor device and lead frame, comprising a bent contact section | |
US20110312213A1 (en) | Flat Cable Wiring Structure | |
CN104600051A (zh) | 半导体模块 | |
US10784756B2 (en) | Electric machine with press-fit electronics package | |
CN105659475B (zh) | 模制定子、模制电动机和空调机 | |
CN109691252B (zh) | 用于电子设备的单件式覆盖件 | |
JP5042627B2 (ja) | 基板への電子部品の実装方法 | |
CN106952882A (zh) | 半导体装置及半导体装置的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJI MOTOR SYSTEM CO., LTD. Free format text: FORMER OWNER: FUJI MOTOR ELECTRONICS TECHNOLOGY CO., LTD. Effective date: 20100511 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20100511 Address after: Tokyo, Japan Applicant after: Fuji Electric Systems Co., Ltd. Address before: Tokyo, Japan, Japan Applicant before: Fuji Electronic Device Technol |
|
ASS | Succession or assignment of patent right |
Owner name: FUJI ELECTRIC CO., LTD. Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD. Effective date: 20111017 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20111017 Address after: Japan's Kawasaki City Applicant after: Fuji Electric Co., Ltd. Address before: Tokyo, Japan Applicant before: Fuji Electric Systems Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |