CN109659294B - 一种电力转换电路装置 - Google Patents

一种电力转换电路装置 Download PDF

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CN109659294B
CN109659294B CN201910036978.6A CN201910036978A CN109659294B CN 109659294 B CN109659294 B CN 109659294B CN 201910036978 A CN201910036978 A CN 201910036978A CN 109659294 B CN109659294 B CN 109659294B
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conversion circuit
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pcb
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CN109659294A (zh
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苏童萍
陈亚东
钱畅
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Jiangsu Shuangju Intelligent Equipment Manufacturing Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

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Abstract

本发明提供了一种电力转换电路装置，其利用树脂层的通孔填充焊料，然后经由加固板进行导电端子的引出，可以避免焊接过程中损毁芯片；加固板可以部分抵抗散热基板的热应力，防止散热基板的过分翘曲；在加固板上设置定位凸起，可以更便捷的安装PCB板，且安装更为精确到位。

Description

一种电力转换电路装置
技术领域
本发明涉及半导体器件封装领域，具体为电力转换装置封装领域，涉及一种电力转换电路装置。
背景技术
现有的电力转换芯片的封装多为在同一水平面上进行的，该种封装有利于薄型化的需要，但是对于减小横向尺寸、方便布线以及提高散热效率是非常不利的，例如图1所示的电力转换封装，其包括安装基板100、壳体101、芯片102、覆铜基板103、导电端子104、焊料105，其中，壳体101设置于所述安装基板100上，所述覆铜基板103安装在所述壳体内，所述芯片102固定在所述覆铜基板103上，所述导电端子104通过焊料105焊接于所述芯片102上。由于导电端子104比较质硬，焊接容易损毁芯片102，并且在导电端子104的顶部一般会电连接一电路板，其不易对准和固定。
发明内容
基于解决上述问题，本发明提供了一种电力转换电路装置，其包括：
散热基板；
壳体，设置于所述散热基板上，且所述壳体具有在其顶端的台阶；
覆铜基板，其焊接在散热基板上，且位于所述壳体内；
多个半导体芯片，所述多个半导体芯片固定于所述覆铜基板上；
树脂层，密封所述多个半导体芯片，且与所述台阶齐平，且在所述树脂层内设置有第一通孔，所述第一通孔露出所述多个半导体芯片的电极；
加固板，其设置于所述台阶和所述树脂层上，且具有第二通孔，所述第一通孔与第二通孔对准；
焊料，填充于所述第一通孔和第二通孔内，且覆盖所述加固板的上表面的一部分；
多个导电端子，其通过所述焊料焊接于所述加固板上且与所述半导体芯片电连接。
根据本发明的实施例，所述加固板的周缘区域设置有定位凸起，所述定位凸起从所述壳体内向外突出。
根据本发明的实施例，还包括PCB板，所述PCB半设置于所述壳体上，且所述PCB板上设置有定位孔，所述定位孔用于穿过所述定位凸起。
根据本发明的实施例，所述定位凸起通过焊接方式与所述PCB板固定。
根据本发明的实施例，所述导电端子穿过所述PCB板上的过孔，并进行焊接，以使得所述导电端子与所述PCB板电连接。
根据本发明的实施例，所述覆铜基板包括陶瓷基板以及位于所述陶瓷基板上下两面的铜镀层，其中下面的铜镀层焊接于所述散热基板。
根据本发明的实施例，所述导电端子的顶端高于所述定位凸起的顶端。
根据本发明的实施例，所述PCB板和所述加固板之间填充有固化树脂。
本发明的优点如下：
(1)利用树脂层的通孔填充焊料，然后经由加固板进行导电端子的引出，可以避免焊接过程中损毁芯片；
(2)加固板可以部分抵抗散热基板的热应力，防止散热基板的过分翘曲；
(3)在加固板上设置定位凸起，可以更便捷的安装PCB板，且安装更为精确到位。
附图说明
图1为现有的电力转换电路装置的剖视图；
图2为本发明的电力转换电路装置的剖视图。
具体实施方式
本发明构思在于设计一种防止翘曲和避免损毁芯片的电力封装结构，其基本构思是树脂层和加固板的叠置结构实现上述功能，具体的实施例将在下述内容中说明。
参见图2，本发明的电力转换电路装置，其包括：
散热基板1，所述散热基板1为金属板、陶瓷板等，其下表面可以焊接或铆接一散热器，该散热器可以是鳍形散热器、微孔散热器、风冷散热器等。优选的，所述散热基板1为金属板，材质为铜。
壳体5，设置于所述散热基板1上，且所述壳体5具有在其顶端的台阶6；
覆铜基板，其焊接在散热基板1上，且位于所述壳体5内；所述覆铜基板包括陶瓷基板2以及位于所述陶瓷基板上下两面的铜镀层3、4，其中下面的铜镀层3焊接于所述散热基板1。铜镀层3、4可以有蚀刻图案，尤其是下面的铜镀层3其具有蚀刻图案，可以增大焊接面积，实现热量的有效传导，以及增强结合力。
多个半导体芯片7，所述多个半导体芯片7通过焊接方式固定于所述覆铜基板的上面的铜镀层4上。多个半导体芯片7为逆变电路芯片，均为功率芯片，所述功率芯片选自IGBT、MOS管等。
树脂层8，密封所述多个半导体芯片7，且与所述台阶6齐平，且在所述树脂层8内设置有第一通孔11，所述第一通孔11露出所述多个半导体芯片7的电极。
加固板9，其设置于所述台阶6和所述树脂层8上，且具有第二通孔12，所述第一通孔11与第二通孔12对准；所述加固板9为硬质绝缘板，优选的，为与陶瓷基板2相同的材质，以抑制翘曲。所述加固板9的周缘区域设置有定位凸起10，所述定位凸起10从所述壳体5内向外突出。所述定位凸起10具有圆柱形状、锥状、十字形状等。
焊料13，填充于所述第一通孔11和第二通孔12内，且覆盖所述加固板9的上表面的一部分；焊料13的形成可以采用刮涂法或者压合法。
多个导电端子14，其通过所述焊料13焊接于所述加固板9上且与所述半导体芯片7电连接。所述导电端子14的顶端高于所述定位凸起16的顶端。
PCB板15，所述PCB板15设置于所述壳体5上，且所述PCB板15上设置有定位孔16，所述定位孔16用于穿过所述定位凸起10。所述定位凸起10通过焊接方式与所述PCB板15固定。所述导电端子14穿过所述PCB板15上的过孔，并进行焊接，以使得所述导电端子14与所述PCB板15电连接。
为了防止PCB板的翘曲，且为了防止焊料13的接合处的氧化问题，所述PCB板15和所述加固板9之间填充有固化树脂(未示出)。
最后应说明的是：显然，上述实施例仅仅是为清楚地说明本发明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引申出的显而易见的变化或变动仍处于本发明的保护范围之中。

Claims (8)

1.一种电力转换电路装置，其包括：
散热基板；
壳体，设置于所述散热基板上，且所述壳体具有在其顶端的台阶；
覆铜基板，其焊接在散热基板上，且位于所述壳体内；
多个半导体芯片，所述多个半导体芯片固定于所述覆铜基板上；
树脂层，密封所述多个半导体芯片，且与所述台阶齐平，且在所述树脂层内设置有第一通孔，所述第一通孔露出所述多个半导体芯片的电极；
加固板，其设置于所述台阶和所述树脂层上，且具有第二通孔，所述第一通孔与第二通孔对准；
焊料，填充于所述第一通孔和第二通孔内，且覆盖所述加固板的上表面的一部分；
多个导电端子，其通过所述焊料焊接于所述加固板上且与所述半导体芯片电连接。
2.根据权利要求1所述的电力转换电路装置，其特征在于：所述加固板的周缘区域设置有定位凸起，所述定位凸起从所述壳体内向外突出。
3.根据权利要求2所述的电力转换电路装置，其特征在于：还包括PCB板，所述PCB板设置于所述壳体上，且所述PCB板上设置有定位孔，所述定位孔用于穿过所述定位凸起。
4.根据权利要求3所述的电力转换电路装置，其特征在于：所述定位凸起通过焊接方式与所述PCB板固定。
5.根据权利要求4所述的电力转换电路装置，其特征在于：所述导电端子穿过所述PCB板上的过孔，并进行焊接，以使得所述导电端子与所述PCB板电连接。
6.根据权利要求1所述的电力转换电路装置，其特征在于：所述覆铜基板包括陶瓷基板以及位于所述陶瓷基板上下两面的铜镀层，其中下面的铜镀层焊接于所述散热基板。
7.根据权利要求5所述的电力转换电路装置，其特征在于：所述导电端子的顶端高于所述定位凸起的顶端。
8.根据权利要求7所述的电力转换电路装置，其特征在于：所述PCB板和所述加固板之间填充有固化树脂。
CN201910036978.6A 2019-01-15 2019-01-15 一种电力转换电路装置 Expired - Fee Related CN109659294B (zh)

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CN101261966A (zh) * 2007-03-08 2008-09-10 富士电机电子设备技术株式会社 半导体装置及其制造方法
CN104979221A (zh) * 2014-04-01 2015-10-14 富士电机株式会社 半导体装置的制造方法及半导体装置
CN106252294A (zh) * 2015-06-12 2016-12-21 富士电机株式会社 半导体装置
CN107546180A (zh) * 2016-06-23 2018-01-05 三菱电机株式会社 半导体装置

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JP5847165B2 (ja) * 2011-04-22 2016-01-20 三菱電機株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101261966A (zh) * 2007-03-08 2008-09-10 富士电机电子设备技术株式会社 半导体装置及其制造方法
CN104979221A (zh) * 2014-04-01 2015-10-14 富士电机株式会社 半导体装置的制造方法及半导体装置
CN106252294A (zh) * 2015-06-12 2016-12-21 富士电机株式会社 半导体装置
CN107546180A (zh) * 2016-06-23 2018-01-05 三菱电机株式会社 半导体装置

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