CN101236897B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN101236897B
CN101236897B CN2008100094499A CN200810009449A CN101236897B CN 101236897 B CN101236897 B CN 101236897B CN 2008100094499 A CN2008100094499 A CN 2008100094499A CN 200810009449 A CN200810009449 A CN 200810009449A CN 101236897 B CN101236897 B CN 101236897B
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film
substrate
semiconductor
addition
molybdenum
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CN101236897A (zh
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神保安弘
伊佐敏行
本田达也
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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CN2008100094499A 2007-02-02 2008-02-02 半导体装置的制造方法 Expired - Fee Related CN101236897B (zh)

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JP2007-023747 2007-02-02

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CN104022115B (zh) 2009-12-25 2017-04-12 株式会社半导体能源研究所 半导体装置
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